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LTC1064-4 Linear Technology IC SWITCHED CAPACITOR FILTER, BUTTERWORTH, LOWPASS, PDIP14, Active Filter
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LT3750EMS#TR Linear Technology LT3750 - Capacitor Charger Controller; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C
LTC1059AMJ/883 Linear Technology IC SWITCHED CAPACITOR FILTER, RESISTOR PROGRAMMABLE, UNIVERSAL, CDIP14, CERDIP-14, Active Filter
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LTC1064-2CS Linear Technology IC SWITCHED CAPACITOR FILTER, BUTTERWORTH, LOWPASS, PDSO16, PLASTIC, SOL-16, Active Filter

ROE capacitor din 41 238 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - Not Available

Abstract: No abstract text available
Text: .14 4.1 4.2 5.0 Block Diagram , combinations that do not include PSRAM or SRAM. R-OE #, R-LB#, R-UB#, R-WE#: These are used to identify RAM OE#, LB#, UB#, WE# signals, and are usually shared between 2 or more RAM die. R-OE #, R-LB#, R-UB# and , 28F640W30 A[MAX:0] S-VCC/P-VCC P-CS#/S-CS1# S-CS2 R-OE # 2.2 VSS D[15:0] RAM Die 4-, 8 , 13 4.0 Ballout and Signal Description 4.1 Signal Ballout Figure 4 shows the W18/W30 SCSP


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PDF W18/W30 64-Mbit 32-Mbit 16-Mbit RD38F2030W0ZTQ0 64W30 RD38F2030W0ZBQ1 RD38F2030W0ZTQ1 64W18 RD38F2040W0YBQ0
Roederstein EGt

Abstract: ROE roederstein Roederstein Bipolar capacitor din 41240 U/25/20/TN26/15/850/SAJ 210 equivalent U/25/20/TN26/15/850/Roederstein EGt
Text: ROE DERSTEIN ELECT RONIC S 53E D f 7AElb24 DOQllfl^ 4 ■A-05-11-01 Roederstein Low-Voltage Electrolytic Capacitors Axial, Bipolar, Special Capacitors fo r Audio-Frequency application DIN 4 1 2 3 6 and DIN 45 910 Part 125 Please observe the following when using the capacitors: 1 , way that the self-heating of the capacitor surface does not exceed 15 K. This value is referred to , – * Insulation included. The capacitors are delivered with insulation. Electric values: DIN 41332 and 41240


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PDF 7AElb24 Roederstein EGt ROE roederstein Roederstein Bipolar capacitor din 41240 U/25/20/TN26/15/850/SAJ 210 equivalent U/25/20/TN26/15/850/Roederstein EGt
2005 - Not Available

Abstract: No abstract text available
Text: .13 4.1 4.2 5.0 Maximum Ratings and Operating Conditions , . 39 16.0 PSRAM Operations. 41 , Initialization. 41 Standby Mode , combinations that do not include PSRAM or SRAM. R-OE #, R-LB#, R-UB#, R-WE#: These are used to identify RAM OE#, LB#, UB#, WE# signals, and are usually shared between 2 or more RAM die. R-OE #, R-LB#, R-UB# and


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PDF W18/W30 32-Mbit, 64-Mbit 32-Mbit 16-Mbit RD38F2240WWYDQ0 RD38F2240WWYDQ1
1997 - D2396

Abstract: D-74211 MAD44 SMC 2060 ROE capacitor 220 P1D125 ROE capacitor F5 90 STP3020 7D19A D102
Text: Outputs 12 8 2 DRAM/VRAM Interface Outputs WE ROE Video Interface VBSY2 JTAGDI , ] Output Muxed row/col address (4MB) address range). RAS[7:0] Output RAS ROE Output , :0], RAS[7:0], CAS[1,0], WE, ROE , IOSEL. July 1997 7 Preliminary SMC System Memory , 11.5 13.5 ns ROE 12.0 14.0 ns - 15.0 ns AERR 8 July 1997 SMC , MAD<33> W1 VCC A12 GND D2 VBSY0 G2 D<119> M2 D<115> T12 MAD< 41


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PDF STP3020 STP3020 STP3021 STP3022 STP3020PGA 299-Pin STP3020TAB 416-Lead D2396 D-74211 MAD44 SMC 2060 ROE capacitor 220 P1D125 ROE capacitor F5 90 7D19A D102
2002 - Not Available

Abstract: No abstract text available
Text: expenses decreased $ 4.1 million from $29.2 million in the fourth quarter to $25.1 million in the first , ,422) 723,443 18,786 $2, 238 ,920 $ 82,532 162,214 39,072 11,502 295,320 4,000 299,320 129,404 1,806,932 3,264 1,939,600 $2, 238 ,920 $ 93,796 1,126,556 1,220,352 152,488 162,656 163,596 1,699,092 1 , 30,189 $ 61,294 $ 0.19 66,589 41 ,562 165,743 39.2% 13,383 179,126 60,053 $119,073 $ 0.37 330 , Cash & Short-Term Investments Total Assets Stockholders' Equity ROE Market Cap FY1998 FY1999 FY2000


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2004 - FLASH MEMORY 38F

Abstract: Intel SCSP 88-ball
Text: .14 4.1 4.2 5.0 Block Diagram , or timings, the notation is prefixed with "S-" (e.g., S-VCC or S-VCC). R-OE #, R-LB#, R-UB#, R-WE , # WP# RST# OE#1 CE#1 VCC1 A[MAX:0] P-VCC P-CS# P-MODE R-OE # 2.2 Flash Die #1 VSS , 0.0512 0.0276 13 4.0 Ballout and Signal Descriptions 4.1 Signal Ballout The Intel , #2 WAIT D13 D5 D10 D2 D8 A0 R-OE # D0 D1 D3 D12 D14 D7 OE#2 OE


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PDF 128WQ --32-Kword 128W30B 128W30T 64PSRAM RD38F3350WWZDQ1 FLASH MEMORY 38F Intel SCSP 88-ball
2004 - FLASH MEMORY 38F

Abstract: 88-ball 28F320W18 38F1020W0YBQ0 38F1020W0YTQ0
Text: .9 4.1 5.0 Block Diagram , subscripted (e.g., VCC or VPP). R-OE #, R-LB#, R-UB#, R-WE#: Used to identify OE#, LB#, UB#, WE#, RAM signals , VSS A[20:19] S-VCC VPP D[15:0] 8-Mbit SRAM R-WE# S-CS2 6 R-UB# R-OE , A14 A16 A16 A0 D8 D2 D10 D5 D13 WAIT CE#2 R-OE # D0 D1 D3 , #2 D7 D14 D12 D3 D1 D0 R-OE # VCCQ VCCQ D15 D6 D4 D11 D9 OE


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PDF 32-Mbit 38F1020W0YTQ0, 38F1020W0YBQ0) 32-KWord FLASH MEMORY 38F 88-ball 28F320W18 38F1020W0YBQ0 38F1020W0YTQ0
2005 - Intel SCSP

Abstract: strataflash retention 252635 7900 Intel intel sram W18 Package
Text: . 8 4.1 Signal Descriptions , for Future Use Stacked Chip Scale Package 16 bits 1.2 Conventions Device R-OE #, R-LB#, R-UB , # 28F320W18 Flash VPP WAIT VSS D[15:0] S-VCC S-CS1 S-CS2 R-OE # 8-Mbit SRAM R-WE# R-UB# R-LB , D5 D13 WAIT CE#2 CE#2 WAIT D13 D5 D10 D2 D8 A0 G H R-OE # D0 D1 D3 D12 D14 D7 OE#2 OE#2 D7 D14 D12 D3 D1 D0 R-OE # H J S-CS1# OE#1 D9 D11 D4 D6 D15 VCCQ VCCQ D15 D6 D4 D11 D9 OE#1 S-CS1# J K CE


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PDF 32-Mbit 38F1020W0YTQ1, 38F1020W0YBQ1) 32-KWord B5102-01 Intel SCSP strataflash retention 252635 7900 Intel intel sram W18 Package
2004 - W18 88

Abstract: FLASH MEMORY 38F Intel SCSP FLASH MEMORY 48F intel 24024
Text: # Active L R-OE # X H P-CS# 3,4,6, 8 WAIT Flash DIN VPP Asserted ADV , .14 4.1 4.2 5.0 Block Diagram , notation is prefixed with "S-" (e.g., S-VCC or S-VCC). R-OE #, R-LB#, R-UB#, R-WE#: Used to identify OE , # P-MODE R-OE # 2.2 Flash Die #1 VSS D[15:0] PSRAM Die R-WE# R-UB# R-LB# Flash Memory , 0.3976 0.3189 0.0039 0.0512 0.0276 13 4.0 Ballout and Signal Descriptions 4.1


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PDF W18/W30 128-Mbit --32-Kword W18/30 128W18 128W18 128W30 128W30 64PSRAM W18 88 FLASH MEMORY 38F Intel SCSP FLASH MEMORY 48F intel 24024
2003 - 251407

Abstract: RD48F2000W
Text: or S-VCC). P-VCC and S-VCC are RFU for stacked combinations that do not include PSRAM or SRAM. R-OE , between 2 or more RAM die. R-OE #, R-LB#, R-UB# and R-WE are RFU for stacked combinations that do not , D10 D5 D13 WAIT F2-CE# H R-OE # D0 D1 D3 D12 D14 D7 F2-OE# J S-CS1# F1-OE# D9 D11 D4 D6 D15 , output buffers, and places the RAM outputs in High-Z. R-OE # is only available on SCSP combinations with , . R-OE # Input R-UB# R-LB# Input F-WE# R-WE# F-WP# Input F-RST# Input F-VPP


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PDF W18/W30 64-Mbit 32-Mbit 16-Mbit 100figuration RD48F2000W0ZBQ0 RD38F2010W0YBQ0 RD38F2020W0YBQ0 RD38F2020W0ZBQ0 RD38F2030W0YBQ0 251407 RD48F2000W
2005 - PF38F2030

Abstract: 38F1030W0ZTQ0 PF38F2030W0YTQE 64W18 251407 PF38F1030W PF38F 38F1030W0ZBQ0
Text: .14 4.1 4.2 Signal Ballout , . 41 Appendix A Write State Machine , PSRAM or SRAM. R-OE #, R-LB#, R-UB#, R-WE#: These are used to identify RAM OE#, LB#, UB#, WE# signals, and are usually shared between 2 or more RAM die. R-OE #, R-LB#, R-UB# and R-WE are RFU for stacked , D[15:0] S-VCC/P-VCC P-CS#/S-CS1# S-CS2 R-OE # RAM Die 4-, 8-, 16-Mbit SRAM or 16- or 32


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PDF W18/W30 32-Mbit, 64-Mbit 32-Mbit 16-Mbit 64W18 64W30 64W30 RD38F2240WWZDQ0 PF38F2030 38F1030W0ZTQ0 PF38F2030W0YTQE 64W18 251407 PF38F1030W PF38F 38F1030W0ZBQ0
2004 - 64W18

Abstract: FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1
Text: .14 4.1 4.2 5.0 Maximum Ratings and Operating Conditions , . 41 Appendix A Write State Machine , that do not include PSRAM or SRAM. R-OE #, R-LB#, R-UB#, R-WE#: These are used to identify RAM OE#, LB#, UB#, WE# signals, and are usually shared between 2 or more RAM die. R-OE #, R-LB#, R-UB# and R-WE , # F-RST# F1-OE# F1-CE# F1-VCC A[MAX:0] S-VCC/P-VCC P-CS#/S-CS1# S-CS2 R-OE # F-WE# F-VPP


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PDF W18/W30 64-Mbit 32-Mbit 16-Mbit RD38F2240WWYDQE 64W30 RD38F2240WWZDQ0 RD38F2240WWYDQ0 RD38F2240WWDQ1 64W18 FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1
2005 - 252063

Abstract: No abstract text available
Text: . 14 4.1 4.2 Signal Ballout , , the notation is prefixed with "S-" (e.g., S-VCC or S-VCC). R-OE #, R-LB#, R-UB#, R-WE#: Used to , VCCQ WAIT OE#1 CE#1 VCC1 A[MAX:0] Flash Die #1 VSS D[15:0] P-VCC P-CS# P-MODE R-OE , 0.0197 0.0039 0.0512 0.0276 12 Datasheet 4.0 4.1 Ballout and Signal Descriptions Signal , D8 A0 G H R-OE # D0 D1 D3 D12 D14 D7 OE#2 OE#2 D7 D14 D12 D3 D1 D0 R-OE # H J S-CS1# OE#1 D9


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PDF W18/W30 128-Mbit --32-Kword W18/30 PF48F3300W0YDQ0 RD38F3350WWZDQ1 64PSRAM 8x10x1 252063
2007 - 532WQ

Abstract: PF38F1030W0YTQ2 PF38F1030 38F1030 pf38f1030w0ybq2 PF38F2030W0YTQ1 PF38F2040W0ZTQ1 RD38F2230 PF48F2000w 32WQ
Text: . 13 4.1 Signal Ballout , combinations that do not include PSRAM or SRAM. R-OE #, R-LB#, R-UB#, R-WE#: These are used to identify RAM OE#, LB#, UB#, WE# signals, and are usually shared between 2 or more RAM die. R-OE #, R-LB#, RUB# and R-WE , # F1-CE# F1-VCC A[MAX:0] S-VCC/P-VCC P-CS#/S-CS1# S-CS2 R-OE # Datasheet 8 Flash Die #1 32 , Signal Description 4.1 Signal Ballout Figure 4 shows the 32WQ and 64WQ W18/W30 SCSP family 88


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PDF W18/W30 32-Mbit, 64-Mbit 16-Mbit, 32-Mbit RD38F2240WWYDQ0 RD38F2240WWYDQ1 532WQ PF38F1030W0YTQ2 PF38F1030 38F1030 pf38f1030w0ybq2 PF38F2030W0YTQ1 PF38F2040W0ZTQ1 RD38F2230 PF48F2000w 32WQ
2004 - 253852

Abstract: No abstract text available
Text: .21 4.1 5.1 5.2 Signal Descriptions , . 41 13.0 Flash Suspend and Resume Operations . 41 14.0 Flash Block Locking and Unlocking Operations . 41 15.0 Flash Protection Register Operation . 41 16.0 Flash Configuration Operation


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PDF LV18/LV30 768-Mbit 256-Mbit 128-Mbit 100-K LV18/LV30) 8x11x1 RD38F4420LVYTQ0 RD38F4420LVYBQ0 253852
2005 - PF38F1030W0YTQ2

Abstract: pf38f1030w0ybq2 FLASH MEMORY 38F w18 63 W18 88 PF38F2030W0YTQF 38F1030 Intel SCSP intel flash memory W18 intel 860
Text: .13 4.1 4.2 5.0 Maximum Ratings and Operating Conditions , that do not include PSRAM or SRAM. R-OE #, R-LB#, R-UB#, R-WE#: These are used to identify RAM OE#, LB#, UB#, WE# signals, and are usually shared between 2 or more RAM die. R-OE #, R-LB#, R-UB# and R-WE , # F1-OE# F1-CE# F1-VCC A[MAX:0] S-VCC/P-VCC P-CS#/S-CS1# S-CS2 R-OE # 18-Oct-2005 8 Flash , Ballout and Signal Description 4.1 Signal Ballout Figure 4 shows the 32WQ and 64WQ W18/W30 SCSP


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PDF W18/W30 32-Mbit, 64-Mbit 32Mbit; 16Mbit RD38F2240WWYDQ0 RD38F2240WWYDQ1 18-Oct-2005 PF38F1030W0YTQ2 pf38f1030w0ybq2 FLASH MEMORY 38F w18 63 W18 88 PF38F2030W0YTQF 38F1030 Intel SCSP intel flash memory W18 intel 860
MAGNETICS 58206-A2

Abstract: COGEMA946042 cogema 946042
Text: lOOKHz Voltaae at Din 3 and 6 Voltaae at Din 2 Pin 3 sink current Pin 5 source current Power , Soft start time constant. A capacitor is connected between this terminal and ground to define the soft start time constant. This capacitor also determines the average short circuit output current. 7 , amplifier output is initially clamped by the external capacitor Css and allowed to rise, linearly, as this capacitor is charged by a constant current source. Output overload pro­ tection is provided in


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PDF L4960 L4960 L4960H L4960is 00b74S4 MAGNETICS 58206-A2 COGEMA946042 cogema 946042
2003 - RD38F3040L0YBQ0

Abstract: flash "high temperature data retention" mechanism rd38f405 PF48F4400L strataflash retention RD48F4400L 400000-40FFFF 28F256L30 28F256L18 LV30
Text: .15 4.1 5.0 Device Description , S-CS2 P[2:1]-CS# R-OE # R-WE# Datasheet Die # 1 32- 64- or 128Mbit PSRAM Die # 2 64- or 128 , A16 D8 D2 D10 D5 D13 WAIT F2-CE# R-OE # D0 D1 D3 D12 D14 D7 , specific Flash specific 15 768-Mbit LVQ Family with Asynchronous Static RAM 4.1 Signal , of 3) RAM OUTPUT ENABLE: Low-true input. R-OE # Input R-OE # low enables the selected RAM


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PDF LV18/LV30 768-Mbit 256Mbit 64-Mbit 16-KWord 128-Mbit 256-Mbit RD48F3000L0YTQ0 NZ48F4000L0YTQ0 RD38F3040L0YBQ0 flash "high temperature data retention" mechanism rd38f405 PF48F4400L strataflash retention RD48F4400L 400000-40FFFF 28F256L30 28F256L18 LV30
Not Available

Abstract: No abstract text available
Text: [2] CBWH[15:8] MBus Interface Outputs DRAMA/RAM Interface Outputs WE ROE Video , RAS[7:0] Output RAS ROE Output RAM O utput Enable WE Output DRAM W rite Enable , ], R A S[7:0], C A S [1 ,0], W E, ROE , IOSEL. July 1997 S un M icroelectronics 7 SMC , . .7] 19.0 13.0 ns IOSEL 10.5 12.0 ns WE 11.5 13.5 ns ROE 12.0 , < 41 > W2 MAD<1> A13 VCC D3 CBWL<7> G3 A<11> M3 D<110> T13 MAD<49


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PDF STP3020 STP3020 STP3021 STP3022 416-Lead TP3020PG 299-Pin
EK117

Abstract: EK119 23d14 sun SPARC 50 EL B17 D126D P3020
Text: CBWL[7:0] CBWH[15:8] A[12] RAS [8] CAS [2] " ROE DRAM/VRA M Interface Video Interface VBSY2 , Enable CAST A[11:0] RAS [7:0] ROE WE Sun Microsyäerts, Inc 5 STP3020 Business SPA RC T , WE, ROE , IOSEL. Sun Miaosyäerts, Ina 7 STP3020 Business SPA FIC T ahrdocy AC , H M em ory A ddress Bus CÄS[0.1] RAS[0. .7] IOS EL WË ROE AERR L ow -to-H igh 10.5 10.5 10.5 17.5 , > D<112> D<101> D<63> D<31> D<23> D<14> D<7> D<38> MCLK EX3> D<8> D< 41 > D<50> D<48> D<70> EX65


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PDF STP3020 STP3020 STP3021 STP3022 STB3DS154-894 EK117 EK119 23d14 sun SPARC 50 EL B17 D126D P3020
2007 - PF38F4050L0ZTQ0

Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
Text: . 19 4.1 Signal Description , . 41 15.2.2 Cautions for Setting PSRAM Mode Register , S-VCC). P-VCC and S-VCC are RFU for stacked combinations that do not include PSRAM or SRAM. R-OE #, R-LB , two or more RAM die. R-OE #, R-LB#, RUB# and R-WE# are RFU for stacked combinations that do not include , (L18-L30) with Asynchronous PSRAM/SRAM 4.1 Signal Description Table 5 describes the active signals


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PDF L18/L30 768-Mbit 256-Mbit 64-Mbit 16-Mbit PF38F4050L0ZTQ0 PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
2003 - PF48F4400L0

Abstract: RD38F3040L0YBQ0 rd38f405 strataflash reliability RD48F4400L0 PF48F4000L0YBQ0 Intel SCSP intel MLC flash LV30 1024-Mbit
Text: .16 4.1 5.0 Device Description , ] D[15:0] xRAM Segment S-CS1# S-VCC P-VCC S-CS2 P[2:1]-CS# R-OE # R-WE# Datasheet , WAIT F2-CE# R-OE # D0 D1 D3 D12 D14 D7 F2-OE# S-CS1# F1-OE# D9 , 768-Mbit LVQ Family with Asynchronous Static RAM 4.1 Signal Descriptions Table 2 describes the , ENABLE: Low-true input. R-OE # Input R-OE # low enables the selected RAM output buffers. R-OE


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PDF LV18/LV30 768-Mbit 256Mbit 64-Mbit 16-KWord 128-Mbit 256-Mbit RD48F3000L0YTQ0 NZ48F4000L0YTQ0 RD48F3000L0YBQ0 PF48F4400L0 RD38F3040L0YBQ0 rd38f405 strataflash reliability RD48F4400L0 PF48F4000L0YBQ0 Intel SCSP intel MLC flash LV30 1024-Mbit
mc68705

Abstract: MC68705c8 TRANSFORMER bck-19 ROE capacitor din 41 238 MC68705 motorola coaxial to analog 5.1 rca converter circuit MC68705c 12v subwoofer amp circuits PC2002LRU pc2002lru-aea-b
Text: 3.1 2-20 2-24 2-27 2-29 2-31 2-31 2-32 2-34 2-35 2-36 2-36 2-37 2-37 2-38 Data Sheets SECTION 3 COMPONENT DATA SHEETS SECTION 4 SCHEMATICS 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 , J JP P7 5 BB1 00 8 JP 0 2 DIR1 00 7 P1 CS8 4 41 J 0 P2 JP2 JP3 1 J , cylindrical capacitor on the left bottom of the board (C142 on silk screen), or the top left three pins (pins , Ground clip this side of capacitor + Figure 1-2 1-6 DSP56362EMUM/AD MOTOROLA Quick


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PDF DSP56362EVM DSP56362, XCB56362 DSP56362 DSP56362EMUM/AD DSP56362EVM PCM1716 mc68705 MC68705c8 TRANSFORMER bck-19 ROE capacitor din 41 238 MC68705 motorola coaxial to analog 5.1 rca converter circuit MC68705c 12v subwoofer amp circuits PC2002LRU pc2002lru-aea-b
47d-15

Abstract: No abstract text available
Text: Outputs CBWL[7:0] RAS[8] CAS[2] CBWH[15:8] WE ROE Video Interface VBSY2 VBSY1 IOSEL , DRAM/VRAM Interface Signal D[127:0] CBWL[7:0] CBWH[15:8] CASO CAST A[11:0] RAS[7:0] ROE WE Type I/O I , Buffer S ignals - M RDY M ERR , M R TY A [1 1:0], RA S[7:0], U A S [1,0], W E, ROE , IOSEL. July 1997 , Address Bus CAS[0.1] EAS[0. .7] IOSEL WE ROE AERR Low-to- High 10.5 10.5 10.5 17.5 24.0 20.0 20.5 18.0 , <31> D<23> D<14> D<7> D<38> MCLK D<3> D<8> D< 41 > D<50> D<48> D<70> D<65> D<67> GND GND CBWL<5> GND D


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PDF STP3020 STP3020 STP3021 STP3022 STP302D 416-Lead STP3020PGA STP3020TAB 299-Pin 47d-15
2003 - 252063

Abstract: No abstract text available
Text: , the notation is prefixed with "S-" (e.g., S-VCC or S-VCC). R-OE #, R-LB#, R-UB#, R-WE#: Used to , G H R-OE # D0 D1 D3 D12 D14 D7 OE#2 OE#2 D7 D14 D12 D3 D1 D0 R-OE # H J S-CS1# OE#1 D9 D11 D4 D6 , selected RAM outputs tristate to high-Z. R-OE # is only connected for SCSP combinations with 1 or more RAM , Power Input R-OE # Input Input P-CS# Input 12 Datasheet 2.4 Block Diagram , #1 CE#1 VCC1 A[MAX:0] Flash Die #1 VSS D[15:0] P-VCC P-CS# P-MODE R-OE # PSRAM Die R-WE


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PDF 128WQ --32-Kword 128W30B 128W30T 64PSRAM RD38F3350WWZDQ1 252063
Supplyframe Tracking Pixel