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Part Manufacturer Description Datasheet Download Buy Part
RN242-1.4-02 Schaffner General Purpose Inductor, 27000uH, 50%, 2 Element, ROHS COMPLIANT PACKAGE
RN242-1-02 Schaffner General Purpose Inductor, 33000uH, 50%, 2 Element, ROHS COMPLIANT PACKAGE
RN242-1-02-33M Schaffner Single Phase EMI Filter, 300V, 50/60HzHz,
RN242-1.4-02-27M Schaffner Single Phase EMI Filter, 300V, 50/60HzHz,
RN2421(TE85L,F) Toshiba America Electronic Components PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59
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RN242-1-02 Schaffner Allied Electronics & Automation - $3.13 $3.13
RN242-1-02-33M Schaffner Allied Electronics & Automation - $2.48 $2.48
RN242-1-02-33M Schaffner RS Components 300 £0.78 £0.77
RN242-1-02-33M Schaffner Sager - $1.34 $1.21
RN242-1-02-33M Schaffner Chip1Stop 300 $4.12 $2.01
RN242-1.4-02 Schaffner Allied Electronics & Automation - $3.13 $3.13
RN242-1.4-02-27M Schaffner Chip1Stop 4 $1.95 $1.95
RN242-1.4-02-27M Schaffner Allied Electronics & Automation - $2.48 $2.48
RN242-1.4-02-27M Schaffner Sager - $1.34 $1.21
RN242-1.4-02-27M Schaffner RS Components 300 £0.78 £0.77
RN2421(TE85L,F) Toshiba America Electronic Components Chip1Stop 4,700 $0.87 $0.68

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RN2421 datasheet (10)

Part Manufacturer Description Type PDF
RN2421 Toshiba PNP transistor Original PDF
RN2421 Toshiba PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS) Original PDF
RN2421 Toshiba Pre-Biased Digital Transistor Original PDF
RN2421 Others The Transistor Manual (Japanese) 1993 Scan PDF
RN 242-1-02 Others CHOKE 33MH 1A Original PDF
RN242-1-02 Schaffner Common Mode Chokes, Filters, CHOKE COMPENSATED 33MH 1A VERT Original PDF
RN 242-1.4-02 Others CHOKE 27MH 1.4A Original PDF
RN242-1.4-02 Schaffner Common Mode Chokes, Filters, CHOKE COMPENSATED 27MH 1.4A VERT Original PDF
RN242-1.4/02 Schaffner Inductor, Current Compensated Chokes Original PDF
RN242-1.4/02 Schaffner CHOKE, COM/ASYM MODE 2X27MH 1.4ACHOKE, COM/ASYM MODE 2X27MH 1.4A; Inductance:27mH; Inductor type:Common/Asymmetrical; Current, DC max:1.4A; Resistance:0.5R; Tolerance, +:50%; Tolerance, -:30%; Case style:RN242; Voltage rating, Original PDF

RN2421 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: RN2421 ~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421 ,RN2422 , „¦) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 10 RN2425 0.47 , Symbol Collector-Emitter voltage Unit VCBO −50 V VCEO RN2421 ~2427 Rating −50 V −10 RN2421 ~2424 Emitter-Base voltage RN2425, 2426 −5 VEBO −6 RN2427 , V RN2421 ~2427 −800 mA Pc 200 mW Tj 150 °C Tstg −55~150 °C


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PDF RN2421 RN2427 RN2422 RN2423 RN2424 RN2425 RN2426 800mA)
RN2425

Abstract: RN1421 RN2427 RN2426 RN2424 RN2423 RN2422 RN2421 RN1427 RN2421-RN2427
Text: RN2421RN2427 PNP (PCT) () RN2421 ,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 , 1 2007-11-01 RN2421RN2427 RN2421 RA RN2422 RB RN2423 RC RN2424 RD RN2425 RE RN2426 RF RN2427 RG (Ta = 25°C) RN2421 2427 , 1.3 RN2427 1.54 2.2 2.86 RN24212424 0.9 1.0 1.1 RN24212427 VEB = 10V , ­59 2­3F1A : 0.012 g () R1 (k) R2 (k) RN2421 1 1 RN2422 2.2 2.2 RN2423


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PDF RN2421RN2427 RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427 RN1421RN1427 236MOD RN1421 RN2427 RN2424 RN1427 RN2421-RN2427
2001 - 2427

Abstract: RN2426 RN2425 RN2424 RN2423 RN2422 RN2421 RN1427 RN1421 RN2427
Text: RN2421 ~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421 ,RN2422,RN2423 , RN1421~RN1427 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2421 1 , Collector-Emitter voltage Symbol RN2421 ~2427 Rating Unit VCBO -50 V VCEO -50 V RN2421 , power dissipation Junction temperature Storage temperature range V -6 Ic RN2421 ~2427 -800 mA Pc 200 mW Tj 150 °C Tstg -55~150 °C 1 2001-11-29 RN2421


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PDF RN2421 RN2427 RN2422 RN2423 RN2424 RN2425 RN2426 -800mA) 2427 RN2424 RN1427 RN1421 RN2427
2007 - Not Available

Abstract: No abstract text available
Text: RN2421 ~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421 ,RN2422,RN2423 , Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2421 RN2422 RN2423 RN2424 RN2425 , voltage Collector-Emitter voltage RN2421 ~2427 RN2421 ~2424 Emitter-Base voltage RN2425, 2426 RN2427 Collector current Collector power dissipation Junction temperature Storage temperature range RN2421 ~2427 Ic , reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 RN2421


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PDF RN2421 RN2427 RN2422 RN2423 RN2424 RN2425 RN2426 -800mA)
Not Available

Abstract: No abstract text available
Text: 1A MAX IMU M RA TI N G S (Ta=25°C) CHARACTERISTIC SYMBOL RN2421-2427 RN2421-2424 v CBO v CE O RATING -50 -5 0 -10 v EBO ic RN2421-2427 PC Tj T stg -5 -6 -800 200 15 0 -55-150 mA mW ° C ° C V UNIT V V , -2.5 -3.0 -1.3 -0.8 -1.0 MHz pF V V mA UNIT nA RN2421-2427 RN2421 RN2422 V Ce - 5 ° V , I b - 0 , =-10V, f=lMHz I E =0 -0.4 -0.5 - Transition Frequency Collector Output Capacitance RN2421-2427 RN2421-2427 , 0.22 MAX. 1.3 2.86 6.11 13 0.61 1.3 2.86 1.1 0.0517 0.11 0.24 kfi UNIT RN2421-2424 RN2425 Resistor


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PDF RN2421 RN2427 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427 RN2421-RN2427
2001 - RN1421

Abstract: RN1427 RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427
Text: RN2421 ~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421 ,RN2422,RN2423 , (k) R2 (k) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 , Collector-Base voltage Collector-Emitter voltage Symbol RN2421 ~2427 Rating Unit VCBO -50 V VCEO -50 V RN2421 ~2424 Emitter-Base voltage RN2425, 2426 -10 VEBO -5 RN2427 , Ic RN2421 ~2427 -800 mA Pc 200 mW Tj 150 °C Tstg -55~150 °C 1


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PDF RN2421 RN2427 RN2422 RN2423 RN2424 RN2425 RN2426 -800mA) RN1421 RN1427 RN2424 RN2427
2427

Abstract: RN2427 RN2426 RN2425 RN2424 RN2423 RN2422 RN2421 RN1221 RN2425 equivalent
Text: RN2421 ~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421 ,RN2422,RN2423 , RN1221~1227 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2421 1 , Symbol RN2421 ~2426 Rating Unit VCBO -50 V VCEO -50 V RN2421 ~2424 , Junction temperature Storage temperature range -5 V -6 Ic RN2421 ~2426 -800 mA Pc , 1/6 RN2421 ~RN2427 Electrical Characteristics (Ta = 25°C) ° Symbol Characteristic


Original
PDF RN2421 RN2427 RN2422 RN2423 RN2424 RN2425 RN2426 -800mA) 2427 RN2427 RN2424 RN1221 RN2425 equivalent
2001 - Not Available

Abstract: No abstract text available
Text: RN2421 ~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421 ,RN2422,RN2423 , Equivalent Circuit and Bias Resistor Values Type No. RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427 R1 (k , Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage RN2421 ~2427 RN2421 ~2424 Emitter-Base voltage RN2425, 2426 RN2427 Collector current Collector power dissipation Junction temperature Storage temperature range RN2421 ~2427 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating -50


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PDF RN2421 RN2427 RN2422 RN2423 RN2424 RN2425 RN2426 -800mA)
2001 - 2427

Abstract: RN1221 RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427
Text: RN2421 ~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421 ,RN2422,RN2423 , Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2421 1 1 RN2422 , 25°C) ° Characteristic Collector-base voltage Collector-emitter voltage Symbol RN2421 ~2426 Rating Unit VCBO -50 V VCEO -50 V RN2421 ~2424 Emitter-base voltage RN2425 , Storage temperature range V -6 Ic RN2421 ~2426 -800 mA Pc 200 mW Tj 150


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PDF RN2421 RN2427 RN2422 RN2423 RN2424 RN2425 RN2426 -800mA) 2427 RN1221 RN2424 RN2427
Not Available

Abstract: No abstract text available
Text: RN2421-RN2427 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current RN2421-2427 , TOSHIBA TOSHIBA TRANSISTOR RN2421-RN2427 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN2421 , Power Dissipation Junction Temperature Storage Temperature Range R N2421-2427 RN2421-2424 RN2425, 2426 , RN2425 RN2426 RN2427 RN2421-2424 VCE - - 5 V Input Voltage (OFF) RN2425, 2426 Vi (OFF) I q = -0.1mA RN2427 Transition Frequency RN2421-2427 fT VC E -5V, I q = -20mA Collector Output V C B -10V, IE


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PDF RN2421-RN2427 RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 800mA) RN1421
2427

Abstract: d 2427
Text: (Ta=25°C) SYMBOL RN2421-2427 RN2421-2424 VCB0 VCE0 RATING -50 -50 -10 vEB0 ic PC RN2421-2427 Ti Tstg , ELECTRICAL CHARACTERISTICS CHARACTERISTIC Collector Cut-off Current RN2421-2427 RN2421 RN2422 RN2423 Emitter , Output Capacitance RN2425.2426 RN2427 RN2421-2427 RN2421-2427 fT Cob VCE=-5V, Ic=-20mA VCB=-10V, IE , RN2421-2424 RN2425 Resistor Rntio R1/R2 RN24 26 RN2427 0.09 0.2 0.1 0.22 0.11 0.24 R1 (Ta=25°C) SYMBOL , RN2421 ,2422,2423 RN2424,2425 RN2426,2427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER


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PDF RN2421 RN2424 RN2426 -800mA) RN1421-1427 RN2422 SC-59 RN2423 2427 d 2427
Not Available

Abstract: No abstract text available
Text: RN2421 ~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2421 , RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Switching, Inverter Circuit, Interface , . R1 (kΩ) R2 (kΩ) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 , °C) Characteristics Collector-Base voltage Collector-Emitter voltage Symbol RN2421 to 2427 Rating Unit VCBO −50 V VCEO −50 V RN2421 to 2424 Emitter-Base voltage RN2425, 2426 â


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PDF RN2421 RN2427 RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, 800mA)
Not Available

Abstract: No abstract text available
Text: RN2421 ~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421 ,RN2422,RN2423 , Type No. R1 (kΩ) R2 (kΩ) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 , ° Characteristics Collector-Base voltage Collector-Emitter voltage Symbol RN2421 ~2427 Rating Unit VCBO −50 V VCEO −50 V RN2421 ~2424 Emitter-Base voltage RN2425, 2426 â , temperature range V −6 Ic RN2421 ~2427 −800 mA Pc 200 mW Tj 150 °C


Original
PDF RN2421 RN2427 RN2422 RN2423 RN2424 RN2425 RN2426 800mA)
2009 - RN2421-2427

Abstract: RN2427 RN2426 RN2425 RN2424 RN2423 RN2422 RN2421 RN1427 RN1421
Text: RN2421 ~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421 ,RN2422,RN2423 , RN1421~RN1427 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2421 1 , Collector-Emitter voltage Symbol RN2421 ~2427 Rating Unit VCBO -50 V VCEO -50 V RN2421 , Collector power dissipation Junction temperature Storage temperature range V Ic RN2421 ~2427 -800 , test report and estimated failure rate, etc). 1 2007-11-01 RN2421 ~RN2427 Electrical


Original
PDF RN2421 RN2427 RN2422 RN2423 RN2424 RN2425 RN2426 -800mA) RN2421-2427 RN2427 RN2424 RN1427 RN1421
Not Available

Abstract: No abstract text available
Text: RN2421-2427 VCBO VCEO Emitter-Base Voltage RN2421-2424 RN2425, 2426 RN2427 VE BO RN2421-2427 , CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current RN2421-2427 SYMBOL : CBO : CEO , q = —100mA RN2425 RN2426 RN2427 RN2421-2424 V C E -5 V Input Voltage (OFF) RN2425, 2426 Vi (OFF) I q = —0.1mA RN2427 Transition Frequency RN2421-2427 fT VC E = _ 5 V , I q = —20mA Collector Output v CB = - i o v , IE = 0 RN2421-2427 ^ob f = 1MHz Capacitance RN2421 RN2422 RN2423


OCR Scan
PDF RN2421 RN2427 RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, 800mA)
high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Text: Super M ini G eneral ~800m A Su p er M ini G eneral Built-in Resistor RN1421 -2 7 RN2421 -2 7 ~20V 50V C , Series RN2701 Series RN2601 Series RN2901 Series RN2421 Series RN6006 RN6001 Series RN4601


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PDF RN1421 RN2421 100Vjy± 2SC2873 2SA1213 2D01F HN2D01FU 1SS308 HN1D01F 1D02F high frequency diode 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
RN1417

Abstract: rn4601
Text: RN2413 RN2414 RN2415 RN2416 RN2417 RN2418 RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427 RN2501 RN2502


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PDF RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1417 rn4601
en2222

Abstract: 8N23 RN2224 RN2225 RN2226 RN2221 RN2301 RN2302 RN2303 RN2304
Text: RN2421 ïK2 SW/INV/D -50 -50 -0.8 0. 2 -0.1 -50 60 -1 -0. 1 -0.25 -0.05 -0.001 RN2422 SC-59(2-3F1*) EBC, R RN2421 200* -5 -0.02 13* R1/R2 2. 2K/2. 2K RN1422 (SC-59(2-3F1*) EBC, R


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PDF RN2221 EN2222 8N2223 RN2224 RN2225 RN2226 47K/22K RN1409 SC-59 RN2409 en2222 8N23 RN2224 RN2221 RN2301 RN2302 RN2303 RN2304
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR RN1421-RN1427 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS High Current Type (Iq (MAX.) = 800mA) With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts Manufacturing Process Low V c e (sat) Complementary to RN2421 ~2427 Unit in mm + 0.5 EQUIVALENT CIRCUIT BIAS RESISTOR VALUES TYPE No. RN1421 RN1422 RN1423 RN1424 RN1425


OCR Scan
PDF RN1421-RN1427 RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 800mA) RN2421
RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Text: RN2226 RN 1227 RN2227 RN1421 RN2421 RN 1422 RN2422 RN1423 RN2423 RN1424 RN2424 RN1425 RN2425 RN1426


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PDF 2SC1815 2SC1815 2SA1015 OT-23MOD. /RN1501 VRN2501/ RN1502 RN2502 RN1503 RN2226 2sa1015 sot-23 rn4601 diode 2sa1015
1421-RN

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR RN 1421-RN 1427 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS High Current Type (Iq (MAX.) = 800 mA) With Built-in B ias Resistors Simplify Circuit Design Reduce a Quantity of Parts Manufacturing Process Low V c e (sat) Complementary to RN2421 ~2427 Unit in mm + 0.5 EQUIVALENT CIRCUIT BIAS RESISTOR VALUES TYPE No. RN1421 RN1422 RN1423


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PDF 1421-RN RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 RN2421 RN1421
marking qd sc59

Abstract: rn1425 RN1426
Text: RN1421-RN1427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. SILICON NPN EPITAXIAL TYPE Unit in mm +0.5 2 . 5 - 0.3 · High Current Type (I^(MAX.)=800mA) · With Built-in Baias Resistors · Simplify Circuit Design · Reduce a Quantity of Parts Namufacturing Process · Low V CE(sat) · Complementary to RN2421 ~2427 EQUIVALENT CIRCUIT BIAS RESISTOR VALUES TYPE NO. RN1421 RN1422 RN1423 RN14 24 RN1425 RN1426 RN1427 Rl(kfi) 1 2.2 4.7 10 0.47 1 2.2 Rl(kiî) 1 2.2 4.7


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PDF RN1421-RN1427 800mA) RN2421 RN1421 RN1422 RN1423 RN1425 RN1426 RN1427 SC-59 marking qd sc59
D 1427

Abstract: RN2421-2427 2114 RAM ic
Text: R N 1 4 2 1 , 1 4 2 2 , 1 4 2 3 R N 1 4 2 4 , 1 4 2 5 R N 1 4 2 6 , 1 4 2 7 Unit in ram SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. · High Current Type (I(;(MAX.)=800mA) · With Built-in Baias Resistors · Simplify Circuit Design · Reduce a Quantity of iarts Namufacturing Process · Low VQg(sat) · Complementary to RN2421-2427 EQUIVALENT CIRCUIT BIAS RESISTOR VALUES TYPE NO. RN1421 Rl(kfl) 1 2.2 4.7 10 0.47 1 2.2 Rl(kfi) 1 2.2 4.7 10 10 10 10 J EDEC EIAJ


OCR Scan
PDF 800mA) RN2421-2427 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 RN1421-1427 D 1427 RN2421-2427 2114 RAM ic
Not Available

Abstract: No abstract text available
Text: RN1421∼RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm High current type (IC (max) = 800mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Low VCE (sat) Complementary to RN2421 to RN2427 Equivalent Circuit and Bias Resister Values Type No


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PDF RN1421â RN1427 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 800mA)
2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
Text: 850 850 856 856 856 861 861 865 865 865 865 865 865 871 Type No. RN2408 RN2409 RN2410 RN2411 RN2421


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
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