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RN1414,LF Toshiba America Electronic Components TRANS PREBIAS NPN 0.2W S-MINI
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RN1414 datasheet (3)

Part Manufacturer Description Type PDF
RN1414 Toshiba Silicon NPN Transistor with integrated resistor Original PDF
RN1414 Toshiba NPN Transistor Original PDF
RN1414(TE85L,F) Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRAN NPN S-MINI 50V 100A Original PDF

RN1414 Datasheets Context Search

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sc 1418

Abstract: RN1414 RN1415 RN1416 RN1417 RN1418 RN2414 RN2418
Text: RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414 ,RN1415,RN1416 , RN1414RN1418 2000-09-14 6/7 RN1414RN1418 Type Name Marking RN1414 RN1415 RN1416 , . R1 (k) R2 (k) RN1414 1 10 RN1415 2.2 10 RN1416 4.7 10 RN1417 10 , Characteristic Collector-base voltage Collector-emitter voltage Weight: 0.012g Symbol RN1414 ~1418 Rating Unit VCBO 50 V VCEO 50 V RN1414 5 RN1415 Emitter-base voltage 6


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PDF RN1414RN1418 RN1414 RN1415 RN1416 RN1417 RN1418 RN2414 RN2418 RN1414 RN1415 sc 1418 RN1416 RN1418 RN2418
2001 - RN1414

Abstract: RN1415 RN1416 RN1417 RN1418 RN2414 RN2418 sc 1418
Text: RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414 ,RN1415,RN1416 , Name Marking RN1414 RN1415 RN1416 RN1417 RN1418 7 2001-06-07 RN1414RN1418 , . R1 (k) R2 (k) RN1414 1 10 RN1415 2.2 10 RN1416 4.7 10 RN1417 10 , Symbol RN1414 ~1418 Rating Unit VCBO 50 V VCEO 50 V RN1414 RN1415 , Collector power dissipation Junction temperature Storage temperature range V IC RN1414 ~1418 100


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PDF RN1414RN1418 RN1414 RN1415 RN1416 RN1417 RN1418 RN2414 RN2418 RN1414 RN1415 RN1416 RN1418 RN2418 sc 1418
RN1414

Abstract: RN1415 RN1416 RN1417 RN1418 RN2414
Text: RN1414RN1418 NPN (PCT) () RN1414 , RN1415, RN1416, RN1417, RN1418 : mm , () (Ta = 25°C) RN14141418 VCBO 50 V VCEO 50 V RN1414 5 , RN1414RN1418 (Ta = 25°C) RN14141418 ICBO VCB = 50V, IE = 0 100 , RN1418 4.7 RN1414 RN1415 RN1416 RN141416 ,18 , 2 mA V V V k 2007-11-01 RN1414RN1418 100 RN1415 IC - VI(ON) RN1414


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PDF RN1414RN1418 RN1414, RN1415, RN1416, RN1417, RN1418 RN24142418 RN1414 RN1415 RN1417 RN1414 RN1415 RN1416 RN1417 RN1418 RN2414
2001 - ROBOTICS

Abstract: RN1414 RN1415 RN1416 RN1417 RN1418 RN2414 RN2418
Text: RN1414 ~RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414 ,RN1415,RN1416 , . R1 (k) R2 (k) RN1414 1 10 RN1415 2.2 10 RN1416 4.7 10 RN1417 10 , Symbol RN1414 ~1418 Rating Unit VCBO 50 V VCEO 50 V RN1414 RN1415 , Collector power dissipation Junction temperature Storage temperature range V IC RN1414 ~1418 100 mA PC 200 mW Tj 150 °C Tstg -55~150 °C 1 2001-06-07 RN1414


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PDF RN1414 RN1418 RN1415 RN1416 RN1417 RN2414 RN2418 RN1414 ROBOTICS RN1416 RN1418 RN2418
Not Available

Abstract: No abstract text available
Text: RN1414 ~RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414 ,RN1415,RN1416 , . R1 (kΩ) R2 (kΩ) RN1414 1 10 RN1415 2.2 10 RN1416 4.7 10 RN1417 , Symbol RN1414 ~1418 Rating Unit VCBO 50 V VCEO 50 V RN1414 RN1415 , Collector power dissipation Junction temperature Storage temperature range V IC RN1414 ~1418 100 mA PC 200 mW Tj 150 °C Tstg −55~150 °C 1 2001-06-07 RN1414


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PDF RN1414 RN1418 RN1415 RN1416 RN1417 RN2414 RN2418 RN1414
2009 - RN1414

Abstract: RN1415 RN1416 RN1417 RN1418 RN2414 RN2418
Text: RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414 , RN1415 , RN1414RN1418 IC - VI (ON) RN1414 100 COMMON EMITTER VCE = 0.2V COLLECTOR CURRENT IC (mA , (OFF) (V) 4 2009-11-16 RN1414RN1418 1000 hFE - IC RN1414 RN1415 1000 COMMON , 100 COLLECTOR CURRENTIC (mA) 5 2009-11-16 RN1414RN1418 RN1414 VCE(sat) - IC COMMON , Marking RN1414 RN1415 RN1416 RN1417 RN1418 7 2009-11-16 RN1414RN1418


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PDF RN1414RN1418 RN1414, RN1415, RN1416 RN1417, RN1418 RN2414 RN2418 RN1414 RN1415 RN1414 RN1415 RN1417 RN1418 RN2418
LB 1416

Abstract: No abstract text available
Text: RN1414 RN1415 In p u t V oltage (OFF) RN1416 RN1417 RN1418 T ransition Frequency RN1414-1418 Collector O , RN1414 ,1415,1416 RN1417,1418 (RN 1Î14) SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D , COLLECTOR TYPE No. RN1414 RN1415 RN1416 RN1417 RN1418 R l (kO) 1 2.2 4.7 10 47 TO-236MOD SC , itter Voltage RN1414 RN1415 E m itter-B ase Voltage RN1416 RN1417 RN1418 Collector C u rren t Collector , Tj Tstg mA mW °C °C 178 RN1414 ,1415,1416 RN1417,1418


OCR Scan
PDF RN1414 RN1417 RN2414 RN2418 RN1415 RN1416 RN1418 O-236MOD LB 1416
2007 - Not Available

Abstract: No abstract text available
Text: RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414 , RN1415, RN1416 , pF V V V mA Unit nA nA 2 2007-11-01 RN1414RN1418 RN1414 IC - VI (ON) 100 COLLECTOR , 0.1 0.1 1 10 100 INPUT VOLTAGE VI (ON) (V) 3 2007-11-01 RN1414RN1418 RN1414 IC - VI (OFF , RN1414RN1418 RN1414 hFE - IC 1000 1000 RN1415 hFE - IC COMMON EMITTER VCE = 5V DC CURRENT GAIN , COLLECTOR CURRENTIC (mA) 100 5 2007-11-01 RN1414RN1418 RN1414 VCE(sat) - IC 1 COLLECTOR-EMITTER


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PDF RN1414RN1418 RN1414, RN1415, RN1416 RN1417, RN1418 RN2414 RN2418 RN1414 RN1415
Not Available

Abstract: No abstract text available
Text: Collector Power Dissipation Junction Temperature Storage Temperature Range RN1414-1418 RN1414 RN1415 RN1416 RN1417 RN1418 RN1414-1418 RATING UNIT VCBO VCEO 50 50 5 6 7 15 25 100 200 , (Ta = 25°C) CHARACTERISTIC RN1414-1418 Collector Cut-off Current RN1414-1418 RN1414 RN1415 Emitter Cut-off RN1416 Current RN1417 RN1418 RN1414-16 , 18 DC Current Gain RN1417 Collector-Emitter Saturation Voltage RN1414-1418 RN1414 RN1415 Input Voltage (ON) RN1416 RN1417 RN1418


OCR Scan
PDF 1414-RN1418 RN1414, RN1415, RN1416, RN1417, RN1418 RN2414 RN2418 RN1414 RN1415
Not Available

Abstract: No abstract text available
Text: RN1414∼RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414 , RN1415 , RN1417 2.13 RN1418 4.7 2 2009-11-16 RN1414∼RN1418 IC - VI (ON) RN1414 100 , RN1414∼RN1418 hFE - IC RN1414 RN1415 1000 DC CURRENT GAIN DC CURRENT GAIN hFE COMMON , COLLECTOR CURRENT IC (mA) 5 2009-11-16 RN1414∼RN1418 RN1414 VCE(sat) - IC RN1415 COMMON , RN1414 RN1415 RN1416 RN1417 RN1418 7 2009-11-16 RN1414∼RN1418 RESTRICTIONS ON


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PDF RN1414â RN1418 RN1414, RN1415, RN1416 RN1417, RN2414 RN2418 RN1414
2006 - Not Available

Abstract: No abstract text available
Text: RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414 , RN1415, RN1416 , RN1414RN1418 RN1414 IC - VI (OFF) 10000 COLLECTOR CURRENT IC (uA) 10000 COLLECTOR CURRENT IC (uA , VI (OFF) (V) 4 2006-03-14 RN1414RN1418 RN1414 hFE - IC 1000 1000 RN1415 hFE - IC , RN1414RN1418 RN1414 VCE(sat) - IC 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) 1 , CURRENTIC (mA) 100 6 2006-03-14 RN1414RN1418 Type Name Marking RN1414 RN1415 RN1416


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PDF RN1414RN1418 RN1414, RN1415, RN1416 RN1417, RN1418 RN2414 RN2418 RN1414 RN1415
Not Available

Abstract: No abstract text available
Text: RN1414∼RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414 , RN1415 , 2014-03-01 RN1414∼RN1418 1000 hFE - IC RN1414 RN1415 1000 COMMON EMITTER VCE = 5V DC , 10 1 10 100 COLLECTOR CURRENT IC (mA) 5 2014-03-01 RN1414∼RN1418 RN1414 , RN1414∼RN1418 Type Name Marking RN1414 RN1415 RN1416 RN1417 RN1418 7 2014-03-01 , commercial production 1994-08 1 2014-03-01 RN1414∼RN1418 Electrical Characteristics (Ta = 25Â


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PDF RN1414â RN1418 RN1414, RN1415, RN1416, RN1417, RN2414 RN2418 RN1414
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR RN1414-RN1418 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1414 , = 5mA, VCE (sat) Iß = 0.25mA 1997 05-13 2/7 - TOSHIBA RN1414-RN1418 RN1414 le - , TOSHIBA RN1414-RN1418 RN1414 l e - Vi (OFF) 5000 3000 RN1415 I c - Vi (OFF) f i j , 05-13 4/7 - TOSHIBA RN1414-RN1418 RN1414 hFE - IC RN1415 hFE - IC COLLECTOR , change without notice. 1997 05-13 1/7 - TOSHIBA RN1414-RN1418 ELECTRICAL CHARACTERISTICS


OCR Scan
PDF RN1414-RN1418 RN1414, RN1415, RN1416, RN1417, RN1418 2414-R RN1414 RN1415 RN1416
Not Available

Abstract: No abstract text available
Text: RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2417,RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1414 ~RN1418 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2414 1 10 RN2415 2.2 10 RN2416 4.7 10 RN2417


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PDF RN2414 RN2418 RN2415 RN2416 RN2417 RN1414 RN1418 RN2414
2000 - 2418

Abstract: RN1414 RN1418 RN2414 RN2415 RN2416 RN2417 RN2418
Text: RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2417,RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1414 ~RN1418 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2414 1 10 RN2415 2.2 10 RN2416 4.7 10 RN2417 10


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PDF RN2414 RN2418 RN2415 RN2416 RN2417 RN1414 RN1418 RN2414 2418 RN1418 RN2418
2001 - RN1414

Abstract: RN1418 RN2414 RN2415 RN2416 RN2417 RN2418
Text: RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2417,RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1414 ~RN1418 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2414 1 10 RN2415 2.2 10 RN2416 4.7 10 RN2417 10


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PDF RN2414 RN2418 RN2415 RN2416 RN2417 RN1414 RN1418 RN2414 RN1418 RN2418
RN1417

Abstract: rn4601
Text: RN1412 RN1413 RN1414 RN1415 RN1416 RN1417 RN1418 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 RN1441


OCR Scan
PDF RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1417 rn4601
Not Available

Abstract: No abstract text available
Text: R N 2 4 1 4 , 2 4 1 5 , 2 4 1 6 R N 2 4 1 7 , 2 4 1 8 (R N 2 4 1 4 ) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm · · · · W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process Complementary to RN1414 ~RN1418 EQUIVALENT CIRCUIT AND BIAS RESISTOR VALUES C Rl B O-vw- TYPE No. RN2414 RN2415 RN2416 RN2417 RN2418 R l (kfl) 1 2.2 4.7 10 47 R2 (kfl) 10 10 10 4.7 10 2. 3


OCR Scan
PDF RN1414 RN1418 RN2414 RN2415 RN2416 RN2417 RN2418 O-236MOD SC-59 RN2414-2418
2006 - Not Available

Abstract: No abstract text available
Text: RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414, RN2415, RN2416, RN2417, RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1414 ~RN1418 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2414 RN2415 RN2416 RN2417 RN2418 R1 (k) 1 2.2 4.7 10 47 R2 (k) 10 10 10 4.7 10 Absolute Maximum


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PDF RN2414 RN2418 RN2414, RN2415, RN2416, RN2417, RN1414 RN1418
2001 - 2418

Abstract: ic 2418 equivalent RN2418 RN2417 RN2416 RN2415 RN2414 RN1418 RN1414 *n2418
Text: RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2417,RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1414 ~RN1418 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2414 1 10 RN2415 2.2 10 RN2416 4.7 10 RN2417 10


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PDF RN2414 RN2418 RN2415 RN2416 RN2417 RN1414 RN1418 RN2414 2418 ic 2418 equivalent RN2418 RN1418 *n2418
RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Text: RN2409 RN1410 RN2410 RN1411 RN2411 RN1412 RN2412 RN1413 RN2413 RN1414 RN2414 RN1415 RN2415 RN1416 RN2416


OCR Scan
PDF 2SC1815 2SC1815 2SA1015 OT-23MOD. /RN1501 VRN2501/ RN1502 RN2502 RN1503 RN2226 2sa1015 sot-23 rn4601 diode 2sa1015
2007 - Not Available

Abstract: No abstract text available
Text: RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414, RN2415, RN2416, RN2417, RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplified circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN1414 ~RN1418 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2414 RN2415 RN2416 RN2417 RN2418 R1 (k) 1 2.2 4.7 10 47 R2 (k) 10 10 10 4.7 10 Absolute Maximum


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PDF RN2414 RN2418 RN2414, RN2415, RN2416, RN2417, RN1414 RN1418
Not Available

Abstract: No abstract text available
Text: TO SHIBA R N 2414-RN2418 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN2414, RN2415, RN2416, RN2417, RN2418 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. + 0.5 2.5 - 0.3 + 0.25 1 .5 - 0 .1 5 . • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN1414 ~RN1418 o o +I I- -e2 EQUIVALENT CIRCUIT A


OCR Scan
PDF 2414-RN2418 RN2414, RN2415, RN2416, RN2417, RN2418 RN1414 RN1418 RN2414 RN2415
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR RN2414-RN2418 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) R N 2 4 1 4 , R N 2 4 1 5, R N 2 4 1 6 , R N 2 4 1 7 , R N 2 4 1 8 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. · · · · W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Q uantity of P arts and M anufacturing Process Complementary to RN1414- -RN1418 EQUIVALENT CIRCUIT AND BIAS RESISTOR VALUES C Rl B O Wr < N < PÍ TYPE No. RN2414 RN2415 RN2416 RN2417 RN2418 R l (k


OCR Scan
PDF RN2414-RN2418 RN1414-- -RN1418 RN2414 RN2415 RN2416 RN2417 RN2418
Not Available

Abstract: No abstract text available
Text: RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414, RN2415, RN2416, RN2417, RN2418 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1414 ~RN1418 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2414 1 10 RN2415 2.2 10 RN2416 4.7 10 RN2417


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PDF RN2414 RN2418 RN2414, RN2415, RN2416, RN2417, RN1414 RN1418 RN2414
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