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AORN100-1AT3 Vishay Intertechnologies element14 Asia-Pacific 37 $5.34 $3.18
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J057QVRN1001 Shenzhen Jinghua Displays Co Ltd Karl Kruse GmbH & Co KG 1,000 - -
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PF-YSTRN100-100M-S SMC Corporation of America Allied Electronics & Automation - $144.07 $144.07
PRN10016N1001J California Micro Devices New Advantage Corporation 837 - -

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RN1001 datasheet (5)

Part Manufacturer Description Type PDF
RN1001 Toshiba Original PDF
RN1001 Toshiba V(cbo): 50V V(ceo): 50V V(ebo): 10V 100mA 400mW silicon NPN epitaxial type transistor Original PDF
RN1001 Others The Transistor Manual (Japanese) 1993 Scan PDF
RN1001 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
RN1001(F) Toshiba TRANS DIGITAL BJT NPN 50V 100MA 3TO-92 Original PDF

RN1001 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: Power Dissipation Junction Temperature Storage Temperature Range RN1001-1006 RN1001-1004 RN1005, 1006 RN1001-1006 SYMBOL VCBO v CEO Ve b o ic PC Tj Tstg RATING 50 50 10 5 100 400 150 -55-150 UNIT V V V mA mW , CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current RN1001-1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1001-1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1001-1004 RN1005, 1006 SYMBOL ÏCBO ÏCEO TEST CONDITION VCB V CE = MIN. - - TYP. -


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PDF RN1001 RN1006 RN1001, RN1002, RN1003 RN1004, RN1005, RN2001 RN2006
RN1001

Abstract: No abstract text available
Text: Collector Cut-off Current RN1001 ~1006 SYMBOL ICBO ICEO TEST CONDITION VCB=50V, IE=0 V c e =50V, IB=0 MIN. TYP. MAX. 100 500 UNIT nA nA RN1001- 1006 RN1001 - 1004 vebo SYMBOL RN1001- 1006 VCBO vCEO , RN1001 ,1002,1003 RN1004,1005,1006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER , BIAS RESISTOR VALUES 0° R1 TYPE No. RN1001 RI (kii) 4.7 10 22 47 2.2 4.7 R2 (ka) 4.7 10 22 47 47 47 JE , RN1001 ,1002,1003 RN1004,1005,1006 ELECTRICAL CHARACTERISTICS (T*i=25°C) CHARACTERISTIC RN1001 RN1002


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PDF RN1001 RN1004 RN2001 RN1002 RN1003 RN1005 RN1006 RN1005
2007 - Not Available

Abstract: No abstract text available
Text: RN1001RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001 ,RN1002,RN1003 , . RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 R1 (k) 4.7 10 22 47 2.2 4.7 R2 (k) 4.7 10 22 47 47 47 , RN1001 ~1006 RN1001 ~1006 RN1001 ~1004 RN1005, 1006 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 10 5 , 1 2001-06-07 RN1001RN1006 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1001 ~1006 RN1001 RN1002 Emitter cut-off current RN1003 RN1004 RN1005 RN1006 RN1001


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PDF RN1001RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
ic 1006

Abstract: RN1003 RN1001 RN1002 RN1004 RN1005 RN1006 RN2001 RN2006
Text: RN1001RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001 ,RN1002,RN1003 , Collector-emitter voltage Emitter-base voltage RN10011006 RN10011004 RN1005, 1006 Collector current , (ON) RN1003 RN1004 RN10011006 RN1003 RN1004 Input voltage (OFF) RN10011004 hFE , . R1 (k) R2 (k) RN1001 4.7 4.7 RN1002 10 10 RN1003 22 22 RN1004 47 , VCBO 50 V VCEO 50 V VEBO 10 5 V IC RN10011006 100 mA PC 400


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PDF RN1001RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001RN2006 RN1001 RN1002 ic 1006 RN1003 RN1006 RN2001 RN2006
Not Available

Abstract: No abstract text available
Text: RN1001 ~RN1006 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1001 , RN1002, RN1003 RN 1004, RN1005, RN1006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND , TYPE No. R I (k ü ) R2 (k C l ) oC BO RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 W v , to change w ithout notice. 1998 09-29 - 1/5 RN1001 ~RN1006 T O SH IB A ELECTRICAL , urrent Gain Collector-Emitter Saturation Voltage RN 1001-1006 RN1001 RN1002 RN1003 RN1004


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PDF RN1001 RN1006 RN1001, RN1002, RN1003 RN1005, RN2001 RN2006
2001 - transistor A 1006

Abstract: TRANSISTOR 100-6 RN1001 RN1004 RN1005 RN1003 RN2001 RN2006 RN1002 RN1006
Text: RN1001 ~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001 ,RN1002,RN1003 , . R1 (k) R2 (k) RN1001 4.7 4.7 RN1002 10 10 RN1003 22 22 RN1004 47 , voltage RN1001 ~1006 RN1001 ~1004 RN1005, 1006 Collector current Collector power dissipation , 50 V 10 VEBO 5 V IC RN1001 ~1006 TO-92 SC-43 2-5F1B 100 mA PC 400 mW Tj 150 °C Tstg -55~150 °C 1 2001-06-07 RN1001 ~RN1006 Electrical


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PDF RN1001 RN1006 RN1002 RN1003 RN1004 RN1005 RN2001 RN2006 transistor A 1006 TRANSISTOR 100-6 RN1003 RN2006 RN1006
2007 - TRANSISTOR 100-6

Abstract: transistor A 1006 RN1001 RN1004 RN1005 RN1003 RN2001 RN2006 RN1002 RN1006
Text: RN1001RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001 ,RN1002 , Values Type No. R1 (k) R2 (k) RN1001 4.7 4.7 RN1002 10 10 RN1003 22 22 , Emitter-base voltage RN1001 ~1006 RN1001 ~1004 RN1005, 1006 Collector current Collector power , VCEO 50 V 10 VEBO 5 V IC RN1001 ~1006 TO-92 SC-43 2-5F1B 100 mA PC , test report and estimated failure rate, etc). 1 2007-11-01 RN1001RN1006 Electrical


Original
PDF RN1001RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006 RN1001 TRANSISTOR 100-6 transistor A 1006 RN1003 RN2006 RN1006
2009 - transistor A 1006

Abstract: RN1001 RN2006 RN2001 RN1006 RN1005 RN1004 RN1003 RN1002 22 1006
Text: RN1001RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001 ,RN1002 , Values Type No. R1 (k) R2 (k) RN1001 4.7 4.7 RN1002 10 10 RN1003 22 22 , voltage Collector-emitter voltage Emitter-base voltage RN1001 ~1006 RN1001 ~1004 RN1005, 1006 , Rating Unit VCBO 50 V VCEO 50 V 10 VEBO 5 V IC RN1001 ~1006 100 , test report and estimated failure rate, etc). 1 2007-11-01 RN1001RN1006 Electrical


Original
PDF RN1001RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006 RN1001 transistor A 1006 RN2006 RN1006 RN1003 22 1006
2001 - RN1001

Abstract: RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
Text: RN1001RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001 ,RN1002,RN1003 , voltage RN10011006 RN10011004 RN1005, 1006 Collector current Collector power dissipation , RN10011006 Symbol ICBO ICEO Test Condition RN1001 RN1002 Emitter cut-off current RN1003 , . R1 (k) R2 (k) RN1001 4.7 4.7 RN1002 10 10 RN1003 22 22 RN1004 47 , 50 V 10 VEBO 5 V IC RN10011006 TO-92 SC-43 2-5F1B 100 mA PC 400


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PDF RN1001RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001RN2006 RN1001 RN1002 RN1003 RN1006 RN2001 RN2006
RN1002

Abstract: RN1005 RN1006 RN1003 RN1001 RN1004 RN2001
Text: RN1001RN1006 NPN (PCT) () RN1001 ,RN1002,RN1003 RN1004,RN1005,RN1006 : mm , 47 RN1006 4.7 47 1 2007-11-01 RN1001RN1006 (Ta = 25°C) RN10011006 , VEBO RN10011006 5 V IC RN10011004 100 mA PC 400 mW Tj , 1.1 RN1006 0.7 1.3 1.0 1.5 0.5 0.8 RN10011006 RN1001 RN1002 , RN1003 RN1004 RN10011006 RN1003 RN1004 RN10011004 hFE VCE (sat) VI (ON) VCE = 5V


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PDF RN1001RN1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN20012006 RN1001 RN1002 RN1006 RN1003 RN2001
Not Available

Abstract: No abstract text available
Text: RN1001 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package V(BR)CEO (V)50 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain. @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq250M @I(C) (A) (Test Condition)5.0m @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)5.0m @I(B) (A) (Test Condition)250u


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PDF RN1001 Freq250M
3892A

Abstract: 2SC3435 2SC3885 2SC3584 2SD1849 EN1402 2sc3886 2SC3884 mitsubishi 2sc DTC143TS
Text: if UN4221 DTD123ES 2SC 3920 / H if RN1002 UN4223 DTD114EA 2SC 3921 H if RN1001


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PDF 2SC4123 2SC4742 2SD1849 2SC4124 2SC3884 2SD1739 2SC3885 2SD1850 RT1N140C 3892A 2SC3435 2SC3885 2SC3584 2SD1849 EN1402 2sc3886 2SC3884 mitsubishi 2sc DTC143TS
RN2004

Abstract: RN1001 RN1006 RN2001 RN2002 RN2003 RN2005 RN2006
Text: RN2001RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1001 ~RN1006 Equivalent Circuit and Bias Resister Values Type No. R1 (k) R2 (k) RN2001 4.7 4.7 RN2002 10 10 RN2003 22 22 RN2004 47


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PDF RN2001RN2006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006 RN1001 RN1006 RN2001 RN1006 RN2003 RN2006
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR RN2001-RN2006 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS . 5.1 MAX. Unit in mm · · · · With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process Complementary to RN1001 ~RN1006 1.27 1.27 0.45 0.55 MAX. 0.45 EQUIVALENT CIRCUIT AND BIAS RESISTOR VALUES TYPE No. R1 (kO) R2 (kO) RN2001 RN2002


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PDF RN2001-RN2006 RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 RN1001 RN1006 RN2001
2001 - Not Available

Abstract: No abstract text available
Text: RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1001 ~RN1006 Equivalent Circuit and Bias Resister Values Type No. R1 (k) R2 (k) RN2001 4.7 4.7 RN2002 10 10


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PDF RN2001 RN2006 RN2002 RN2003 RN2004 RN2005 RN1001 RN1006
RN1417

Abstract: rn4601
Text: [1 ] [ 1 ] Alphanum eric Product List Device RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1011 RN1101 RN1102 RN1103 RN1104 R N H 05 RN1106 RN1107 RN1108 RN1109 RN1110 RN1111 RN1112 RN1113 RN1114 R N U 15 RN1116 RN1117 RN1118 RN1201 RN1202 RN1203 RN1204 RN1205 Page 75 75 75 75 75 75 80 80 80 84 84 87 87 87 87 87 87 93 93 93 98 98 102 102 106 106 106 106 106 113 113 113 113 113 Device RN1206 RN1207 RN1208 RN1209 RN1210 RN1211 RN1221 RN1222 RN1223 RN1224 RN1225 RN1226


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PDF RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1417 rn4601
Not Available

Abstract: No abstract text available
Text: T O S H IB A RN2001 ~RN2006 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS 5.1 M A X . • W ith Built-in Bias Resistors • Simplify Circuit Design 0.45 • Reduce a Q uantity of P arts and M anufacturing Process • 0.55 M A X . Complementary to RN1001 ~RN1006 0.45 1.27 EQ U IVALEN T CIRCUIT A N D BIAS


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PDF RN2001 RN2006 RN2001, RN2002, RN2003 RN2004, RN2005, RN1001 RN1006
2001 - RN1001

Abstract: RN1006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006
Text: RN2001RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1001 ~RN1006 Equivalent Circuit and Bias Resister Values Type No. R1 (k) R2 (k) RN2001 4.7 4.7 RN2002 10 10 RN2003 22 22 RN2004 47


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PDF RN2001RN2006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006 RN1001 RN1006 RN2001 RN1006 RN2003 RN2006
2007 - Not Available

Abstract: No abstract text available
Text: RN2001RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1001 ~RN1006 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN2001 RN2002 RN2003 RN2004 RN2005 RN2006 R1 (k) 4.7 10 22 47 2.2 4.7 R2 (k) 4.7 10 22 47 47 47 JEDEC


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PDF RN2001RN2006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006 RN1001 RN1006
2003Z

Abstract: No abstract text available
Text: RN2001,2002,2003 RN2004,2005,2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm &1MAX. FEATURES : . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process . Complementary to RN1001 ~1006 (14 5 CX5 5 MAX. Q4 8 EQUIVALENT CIRCUIT BIAS RESISTOR VALUES TYPE No. Rl (kn) 4.7 10 22 47 2.2 4.7 R2 (kn) 4.7 10 22 47 47 47 BO Rl WV~ RN2001 RN2002 RN2003 RN2004 1. EMITTER 2


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PDF RN2001 RN2004 RN1001 RN2002 RN2003 RN2004 RN2005 RN2006 RN2001 2003Z
2007 - RN1001

Abstract: RN1006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006
Text: RN2001RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1001 ~RN1006 Equivalent Circuit and Bias Resister Values Type No. R1 (k) R2 (k) RN2001 4.7 4.7 RN2002 10 10 RN2003 22 22 RN2004 47


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PDF RN2001RN2006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006 RN1001 RN1006 RN2001 RN1006 RN2003 RN2006
RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Text: 47 47 22 - - 4.7 10 22 47 4.7 10 RN1001 RN2001 RN1002 RN2002 RN1003 RN2003 RN1004


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PDF 2SC1815 2SC1815 2SA1015 OT-23MOD. /RN1501 VRN2501/ RN1502 RN2502 RN1503 RN2226 2sa1015 sot-23 rn4601 diode 2sa1015
2009 - RN1001

Abstract: RN1006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006
Text: RN2001RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1001 ~RN1006 Equivalent Circuit and Bias Resister Values Type No. R1 (k) R2 (k) RN2001 4.7 4.7 RN2002 10 10 RN2003 22 22 RN2004 47


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PDF RN2001RN2006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006 RN1001 RN1006 RN2001 RN1006 RN2003 RN2006
RN1Z

Abstract: KN1204 BN1243 RN1202 RN1201 8N2226 RN1008 RN1007 RN1006 RN1003
Text: ) il B í# 1Ê ÏJi Ê £ ft 250* 10 0. 005 6 R1/R2 4.7K/4. 7K BN2001 TO-92® ECB, 8 RN1001


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PDF RN1002 RN1003 RN1004 RN1006 RN1007 BN1223 10K/10K RN2224 RN1224 47K/10K RN1Z KN1204 BN1243 RN1202 RN1201 8N2226 RN1008
2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
Text: * MPS2222A * MPS2907 * MPS2907A * MPSA13 * MPSA14 * MPSA42 * MPSA43 * MPSA92 * MPSA93 * RN1001 * RN1002


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
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