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LT1055MH Linear Technology IC OP-AMP, 1200 uV OFFSET-MAX, 4.5 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1058ACJ Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 5 MHz BAND WIDTH, CDIP14, 0.300 INCH, HERMETIC SEALED, CERDIP-14, Operational Amplifier
LT1055MH#PBF Linear Technology IC OP-AMP, 1200 uV OFFSET-MAX, 4.5 MHz BAND WIDTH, MBCY8, LEAD FREE, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1638HS#TRPBF Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDSO14, 0.150 INCH, LEAD FREE, PLASTIC, SOP-14, Operational Amplifier
LT1639IN#TR Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDIP14, 0.300 INCH, PLASTIC, DIP-14, Operational Amplifier
LT1639IN#TRPBF Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDIP14, 0.300 INCH, LEAD FREE, PLASTIC, DIP-14, Operational Amplifier
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RL29-8-H-1200-RT/73C/136 PEPPERL+FUCHS GmbH Allied Electronics & Automation - $153.92 $153.92

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RL29-8-H-1200-RT/73C/136 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
RL29

Abstract: OMH-MLV11-K OMH-22
Text: Energetic diffuse mode sensor RL29-8-2000/73c/136 Dimensions 1 Connector view 4 2 3 54.3 14.8 Print Type code Connection diagram SW 8 25.8 16 6 ø5 26.5 88 62 Emitter 9.8 10 2 4 11 5 25 Receiver M12 x 1 Dovetail mount 10 51.8 Sensing range adjuster LED indicator: switching state Model Number Electrical connection RL29 , 600 800 1000 1200 1400 1600 1800 2000 Distance X [mm] y x Subject to


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PDF RL29-8-2000/73c/136 RL29-8-2000 RL29 OMH-MLV11-K OMH-22
F2001

Abstract: H160 OMH-MLV11-K
Text: Retro-reflective sensor with polarisation filter RL29-55/73c/136 Dimensions 1 Connector view 4 2 3 54.3 14.8 Print Type code Connection diagram SW 8 25.8 16 6 ø5 17.8 Receiver 9.8 2 10 4 11 5 25 88 62 Emitter M12 x 1 Dovetail , to technical advances. 2 4 6 8 H85 C110-3 H60 H160 F2001 10 12 Distance X [m , 5 6 7 8 9 10 11 12 Distance X [m] Release date: 2008-06-12 08:47 Date of


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PDF RL29-55/73c/136 OMH-05 C110-2 OFR-100/100 F2001 H160 OMH-MLV11-K
H160

Abstract: OMH-MLV11-K
Text: Retro-reflective sensor with polarisation filter RL29-55-V/73c/136 Dimensions 1 Connector view 4 2 3 54.3 14.8 Print Type code Connection diagram SW 8 25.8 16 6 ø5 17.8 Receiver 9.8 2 10 4 11 5 25 88 62 Emitter M12 x 1 Dovetail , . 4 6 8 H85 C110-2 H60 H160 F2000 10 Distance X [m] Release date: 2007-11-27 13:52 , 2 3 4 5 6 7 8 Release date: 2007-11-27 13:52 Date of issue: 2007-11-27 801764


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PDF RL29-55-V/73c/136 RL29-55-V C110-2 OFR-100/100 H160 OMH-MLV11-K
2010 - 3X2A

Abstract: No abstract text available
Text: Bottom View S1 G1 S2 G2 Pin 1 D1 Top View 1 2 3 4 8 7 6 5 D2 D1 D1 D2 D2 G1 S1 G2 S2 , Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ± 8 , =100A/µs 12 44 22 21 7.5 23.0 8 745 90 125 120 165 -0.65 Min -20 -1 -5 ±100 -1 Typ Max Units V µA nA V A m , : On-Region Characteristics (Note E) 90 80 RDS(ON) (m ) 70 VGS=-2.5V 60 50 40 0 6 8 10 -ID (A) Figure 3 , °C 40 100 125°C 60 25°C 20 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source


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PDF AON4803 AON4803 15nsient 3X2A
BC286

Abstract: BC287 transistor Bc287 30E Transistor DD30 transistor BC286
Text: No file text available


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PDF BC286 BC287. C28fi 100nA BC287 transistor Bc287 30E Transistor DD30 transistor BC286
2010 - Not Available

Abstract: No abstract text available
Text: CHARACTERISTICS 5 VDS=-10V ID=-3.4A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 0 2 4 6 8 10 -Qg (nC , Bottom D A A S G 1 2 3 4 8 7 6 5 K K D D G S A K Absolute Maximum Ratings TA=25°C unless otherwise , Pulsed Drain Current B MOSFET -20 ± 8 -3.4 -2.7 -15 Schottky Units V V A VGS TA=70°C ID IDM , CHARACTERISTICS 25 -4.5V 20 20 -3.0V -2.5V VDS=-5V 16 15 -ID (A) 12 -ID(A) 8 VGS=-1.5V -2.0V 10 125 , =-3.4A 60 VGS=-4.5V 1.1 50 1 40 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain


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PDF AON4703 AON4703
2008 - AON4703

Abstract: No abstract text available
Text: <0.5V@0.5A D 8 7 6 5 K S A A S G 1 2 3 4 A K K D D G DFN3X2 , ± 8 -3.4 -2.7 A -15 20 1.9 1.2 IF IFM Junction and Storage Temperature Range , Semiconductor, Ltd. 8 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode , 0 2 4 6 8 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 15 1ms , 15 20 TJ(Max)=150°C TA=25°C 10.0 10 -VDS (Volts) Figure 8 : Capacitance


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PDF AON4703 AON4703
2008 - AON4803

Abstract: No abstract text available
Text: (VGS = -1.8V) D2 D1 S1 G1 S2 G2 1 2 3 4 D1 D1 D2 D2 8 7 6 5 G2 G1 , VDS Drain-Source Voltage Units -20 V ± 8 -3.4 V -2.7 A VGS Gate-Source , . Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 1.0 , 400 200 0 Crss 165 0 0 2 4 6 8 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 -VDS (Volts) Figure 8 : Capacitance Characteristics RDS(ON) limited 15


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PDF AON4803 AON4803
2006 - RSS085N05

Abstract: No abstract text available
Text: RSS085N05 Transistor 4V Drive Nch MOS FET RSS085N05 Structure Silicon N-channel MOS FET External dimensions (Unit : mm) SOP8 5.0 1.75 0.4 ( 8 ) (1) (4) 1pin mark 0.4Min. 3.9 , ( 8 ) (7) (6) (5) ( 8 ) (7) (6) 2 (1) (5) 1 (2) (3) 1 ESD Protection Diode. 2 Body Diode. (1) (2) (3) (4) (4) (1) (2) (3) (4) (5) (6) (7) ( 8 ) Source Source , Current : ID [A] Fig. 8 Switching Characteristics 10 0 5 10 15 20 25 30 Total


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PDF RSS085N05 RSS085N05
AON4703L

Abstract: DFN3X2-8L AON4703 V7390
Text: 8 7 6 5 K S A A S G 1 2 3 4 A K K D D G DFN3X2-8L Absolute , Steady-State Maximum Junction-to-LeadC Schottky Units V V ± 8 -3.4 -2.7 A -15 20 1.9 1.2 , . Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 , 400 Crss 200 Coss 165 0 0 0 2 4 6 8 0 -Qg (nC) Figure 7 , RDS(ON) limited 1.0 15 20 TJ(Max)=150°C TA=25°C 10.0 10 -VDS (Volts) Figure 8


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PDF AON4703 AON4703 AON4703L 0E-03 0E-04 0E-05 0E-06 DFN3X2-8L V7390
2007 - Not Available

Abstract: No abstract text available
Text: 7 8 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHANGE : Qg (nC , =75°C Ta=25°C Ta=-25°C VGS=0V Pulsed 1 SOURCE CURRENT : IS (A) 5 6 7 8 9 10 DRAIN CURRENT : ID , Current () Fig. 8 Static Drain-Source On-State Resistance vs. Drain Current () Fig.9 Static


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PDF RUL035N02 RUL035N02
2002 - samsung crt monitor circuit diagrams

Abstract: repair lcd monitor samsung ALL half 1008 RL56 RH56 rh33 RL46 NATIONAL SEMICONDUCTOR RH6 RH43 rh10
Text: FPD33684 can support both XGA ( 8 drivers) or SXGA (10 drivers) applications. Output voltages are , (Note 7) VGMA1 Upper RDAC High Side Input (Note 8 ) VDD2/2 + 0.2 VDD2 - 0.2 V VGMA5 Upper RDAC Low Side Input (Note 8 ) VDD2/2 + 0.2 VDD2 - 0.2 V VGMA6 Lower RDAC High Side Input (Note 8 ) 0.2 VDD2/2 - 0.2 V VGMA10 Lower RDAC Low Side Input (Note 8 ) 0.2 VDD2/2 - 0.2 V VCS Charge Share Voltage The Greater of VDD1 or VGMA6


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PDF FPD33684A/ FPD33684B FPD33684 18-bit samsung crt monitor circuit diagrams repair lcd monitor samsung ALL half 1008 RL56 RH56 rh33 RL46 NATIONAL SEMICONDUCTOR RH6 RH43 rh10
2006 - AON4703

Abstract: AON4703L
Text: 8 7 6 5 K S A A S G 1 2 3 4 A K K D D G DFN3X2-8L Absolute , Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. MOSFET -20 ± 8 -3.4 -2.7 , . Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 , 400 Crss 200 Coss 165 0 0 0 2 4 6 8 0 -Qg (nC) Figure 7 , RDS(ON) limited 1.0 15 20 TJ(Max)=150°C TA=25°C 10.0 10 -VDS (Volts) Figure 8


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PDF AON4703 AON4703 AON4703L 0E-03 0E-04 0E-05 0E-06
2008 - Not Available

Abstract: No abstract text available
Text: () 4 5 6 7 8 10 1000 100 10 0.01 9 10 5 7 6 8 0.1 0.01 0.0 DRAIN CURRENT : ID (A) Fig. 8 Static Drain-Source On-State Resistance vs. Drain Current


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PDF RUL035N02
LTD-4608CB

Abstract: LTD-2601JG LTS-4802KR LTC-2621CB ltd5721 LTP-4323JG LTS-5001AJR LTP-7188KD LTS-2801AJR 6740k
Text: . Hand Decimal 1200 µcd Common Cathode, Rt . Hand Decimal 800 µcd Common Cathode, Rt . Hand , µcd Common Anode, Rt . Hand Decimal 800 µcd Common Anode, Rt . Hand Decimal 1200 µcd , (.3") Dual-In-Line .5" H x .3"W x .2"D Description Typ.IV/Seg @ IF=1mA Common Cathode, Rt , Decimal 1200 µcd Common Cathode, Rt . Hand Decimal 800 µcd Common Cathode, Rt . Hand Decimal , Common Anode, Rt . Hand Decimal 800 µcd Common Anode, Rt . Hand Decimal 1200 µcd Common Anode


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PDF MIL-STD-202 MIL-STD-750 MIL-STD-883 30min LTD-4608CB LTD-2601JG LTS-4802KR LTC-2621CB ltd5721 LTP-4323JG LTS-5001AJR LTP-7188KD LTS-2801AJR 6740k
1380B

Abstract: 1380D 1390-B 1330C 1260B 1390B
Text: N on-ln siilated Term inals Turret H ollow Miniature Please refer to Figure 1390 P a rt No. 1390A , refer to Figure 1200 P a rt No. 1200A 1200B 1200C 1200D 1200E Board Thick .031 .062 .094 .125 .155 M , 2 .1 2 5 D IA . .1 8 8 .109/ ^ / _ r . 1 8 8 D IA . +.000 · .0 0 5 .0 7 0 D IA . T H R , .165 .195 Swage Tool 1200 1200 1200 1200 1200 Fig. 1390 Fig. 1200 - Please refer to Figure 1330 P a rt No. 1330B 1330C 1330D B oard Thick .062 .094 .125 M ounting +.003 Hole Dia 001 .137 .137


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PDF 1390B 1390C 1390D 1200B 1200C 1200D 1200E 1330B 1330C 1330D 1380B 1380D 1390-B 1260B
2003 - GT 1081

Abstract: T75 TYPE 2000 106 35K 10 35L DIODE RECTIFIER DIODE D100 kuka-2003-inhalt.qxd T75 550 106 35K 045 Eupec Power Semiconductors 588 n 56DN06
Text: Outline / page 1200 . 1800 1200 . 1800 1200 . 1800 1650 2590 710 11, 8 18,5 10, 8 , ,1 4,2 5,6 5,6 4,0 1200 *) 1500*) 1500*) 1300*) 1300*) 1500*) 2, 8 *) 3,5*) 3,5 , ) V Tvj = Tvj max rT m Tvj = Tvj max 1000 . 1400 1000 . 1400 1000 . 1400 1200 1000 , 740 740 1050 1200 1600 3,70 3,15 3,20 4,60 5,30 5,30 7,50 8 ,50 11,50 68,45 49,60 , (on) A/µs 5,2 7,5 . 8 7,5 . 8 9 1, 8 /6 3,0/4 2,95/6 4,9/4 100 40 56 45 5000


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PDF kuka-2003-inhalt 40L/82 26K/86 14suant GT 1081 T75 TYPE 2000 106 35K 10 35L DIODE RECTIFIER DIODE D100 kuka-2003-inhalt.qxd T75 550 106 35K 045 Eupec Power Semiconductors 588 n 56DN06
RECTIFIER DIODE D100

Abstract: IFM D100 T75 TYPE 2000 106 35K 721 106 35K 106 35K 045 D748N-2800 DSW27 D100 AL 2450 dv
Text: 1200 . 1800 1200 . 1800 1200 . 1800 1650 2590 710 11, 8 18,5 10, 8 696,0 1710,0 , 6800 8000 . 9000 8500 . 9000 1660 3400 6030 1200 4850 8 ,5 20,0 53,0 10,0 50,0 , 400 330 450 645 740 740 1050 1200 1600 3,70 3,15 3,20 4,60 5,30 5,30 7,50 8 ,50 11 , max sin 2, 8 2, 8 2, 8 2,5 3, 8 3, 8 3,2 3,2 3,2 26 26 28 28 21 21 16 22 44 3380 , 1200 *) 1500*) 1500*) 1800*) 1800*) 1800*) 1300*) 1300*) 1500*) Q(rr) mAs di/dt


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D100N

Abstract: No abstract text available
Text: B-27d 20 1200 1400 1600 1800 Rt h j _ c 1 0.42°C /W 2000 200 100 1.33 , . (R) Rt h J - C 1 0 .4 8 °C / W 200 80 (F ) Av D325N D325N D325N D325N D325N , 5 0 ° C 400 600 800 1. 60 T t i g h t = 4 5 Nm 1200 1200 1400 1600 1800 200 , Rt h J _ c i 0 . 1 1 ° C / W 6.1 1.50 1100 i 2t=186kA2s 20 I 0. 72 ! 0.72 , SILICON 120 Tj At D80N 2 (F) D80N 4 (F) D80N 6 (R) D80N. 8 (R) D80N 10 (R) D80N 12


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PDF B-27d 20kA2s 45kA2s 100oC D325N D100N
gt 2399

Abstract: No abstract text available
Text: [ h [ ^- J 171 VDD ÏH F T C T ID 771 7Ô] cf RT 24 PIN FLAT QT [TT 771 n.c , se m ic o n d u c to r < MSM6882-3 MSM6882-5_ 2400/ 1200 bps MSK MODEM FOR WIRELESS , signal is input to the digital PLLan d re-generated tim ing clock ( RT ) is output from the dem odulator, synchronized w ith RD. FEATURES · · · · · · · · · · · Bit Rate 2400/ 1200 bps On Chip SCF (Sw itched , MCS ME SD ST SIN PRE BR SG GND MSM6882-3RS>\ V M SM 6 8 8 2 -5 R S7 (Top V iew ) . [T


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PDF MSM6882-3 MSM6882-5_ MSM6882-3/-5 SYSTEM-MSM6882-3/5 MSM6882-3: MSM6882-5: gt 2399
2T31

Abstract: 2T312A
Text: T t=25°C l Zt 1 1 1 t ( 1 1 r 1 t a i a a 1 i STYLE Rt h J - C t o . 8 4 , 6 7 8 9 10 11 12 kv»s T jm = 125°C 22 50 H t tlj C< 1 - 5 ° C / W 100 , i * : Ht h j _ c t 1 . 2 ° C / W 2 120 70 50+ 100 TO-48 Hth _ c S.0 . 8 , 1200 1400 i6oo laoo i 1 I 1 1 1 t 1 I I 1 t a 1 ( 1 1 50+ ! tq=400us Rt , 2 20 .6 0 400* i 2.4 200 D0-5Ty 1 • t 1 • t i g h t ’* 8 " " â


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PDF
PLL 2400 MHZ

Abstract: No abstract text available
Text: E2A0035-16-XO OKI Semiconductor MSM6882-3/6882-5 2400/ 1200 bps Single Chip MSK Modem G EN ER A , to the digital PLL and the re-generated timing clock ( RT ) is output from the demodulator , rate 2400/ 1200 bps · CCIR Rec. 623 · The modulation method can be selected from COS-FFSK and SIN-FFSK , MSM6882-3/6882-5 PIN CONFIGURATION (TOP VIEW) X1 X2 MCS ME SD ST SIN PRE BR 1 2 3 4 5 6 7 8 9 u o 22 V dd 21 FT X1 1 X2 2 MCS 3 © '3 CM V dd 23 FT 22 CT 21 CF 20 RT 19


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PDF E2A0035-16-XO MSM6882-3/6882-5 MSM6882-3/6882-5 S0P24-P-430-1 PLL 2400 MHZ
2007 - Not Available

Abstract: No abstract text available
Text: . Rev. 1.2_00 2. Nch open drain output (1) SNT-6A package Table 8 TEMPERATURE SWITCH IC S , . Rev. 1.2_00 Test circuit 1. A VDD Open RT TEMPERATURE SWITCH IC S-5841 Series R *1 100 k V , " H " "L" 12 Seiko Instruments Inc. Rev. 1.2_00 TEMPERATURE SWITCH IC S-5841 Series Table , Rev. 1.2_00 TEMPERATURE SWITCH IC S-5841 Series The S-5841 Series is a temperature switch , output product VDD Rev. 1.2_00 Temperature sensor + - Delay circuit Logic circuit


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PDF S-5841 OT-23-5.
Not Available

Abstract: No abstract text available
Text: 1200 1400 180 Vp ® 25°C : A Ip I max. (V) _ (A) Rt h J _ c i O . 1 4 ° C / W 200 400 600 800 1000 1200 1400 2000 1 .9 0 Ar m s T J M= 1 5 0 ° C max , 800 900 1000 1200 1400 Ar a s Rt h J _ c l O . 1 1 ° C / W i 2t=51.2kA2s 210 200 3200 1 .6 0 500 400 600 800 900 1000 1200 1400 _ 1 -J , Fc l a a p =3- 1 I 1 I t 1 l 1 1200 Rt h J _ c L 0 . 0 6 ° C / H 1200 1400 1600


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PDF D178S 20kA2s D208S
VBO 20-16N02

Abstract: B2HKF 20-16N02 1112AY4 13-16A02 ad6124 vhf 15-14io5 13-12A02 B2HKF 250 B2U 250
Text: 1 0 .0 8 .7 - . _ ' H IV ° - - - - o il-c o o lin g w ith c o o lin g pla te , 25-12N02 VBO 25-16N02 800 1200 1600 800 1200 1600 800 1200 1600 V 250 400 500 250 400 500 250 400 500 A 18 °C 85 Wm 45°C 10 ms A 220 rT "*VJM ^ th J C ^ th J K Package style See , 14 150 3.0 3.4 Fig. 40 Weight = 15 g 38 85 370 0.85 8 150 2.8 3.2 , VBO 25-12A02 VBO 25-16A02 1200 1600 1200 1600 1200 1600 400 500 400 500 400 500 18 31 38 85 85 85 220


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PDF 13-08N02 13-12N02 13-16N02 20-08N02 20-12N02 20-16N02 25-08N02 25-12N02 25-16N02 13-12A02 VBO 20-16N02 B2HKF 1112AY4 13-16A02 ad6124 vhf 15-14io5 B2HKF 250 B2U 250
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