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2002 - SI 13003

Abstract: X 13003 PIN photodiode chip PIN photodiode chip 850nm 13003 applications fiber-optic photodiode for 850nm SD150-13-003 VCSEL die bonding 850nm photodiode
Text: SD150- 13-003 4 Mbps Si PIN Photodiode Chip The SD150- 13-003 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation , extending the effective operating range of the IrDA-enabled peripherals. The SD150- 13-003 is ideally suited , Photonix can custom assemble the SD150- 13-003 into OEM IrDA transceiver modules. Contact factory for


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PDF SD150-13-003 SD150-13-003 SI 13003 X 13003 PIN photodiode chip PIN photodiode chip 850nm 13003 applications fiber-optic photodiode for 850nm VCSEL die bonding 850nm photodiode
2009 - 13003

Abstract: X 13003 13003 d BR 13003 PIN Photodiode For CATV Receiver PIN Photodiode 1550nm PDA-1300-3 InGaAs Photodiode 1550nm PDA-1300 1550nm catv receiver
Text: Optoway PDA- 1300-3 * PDA- 1300-3 3 GHz InGaAs PIN Photodiode Module for CATV/Wireless/SAT Receiver * DESCRIPTION PDA- 1300-3 InGaAs PIN Photodiode series are high quality 3 GHz analog photodetectors designed for , 4/9/2009 V2.0 Optoway PDA- 1300-3 , 4/9/2009 V2.0 Optoway PDA- 1300-3


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PDF PDA-1300-3 PDA-1300-3 13003 X 13003 13003 d BR 13003 PIN Photodiode For CATV Receiver PIN Photodiode 1550nm InGaAs Photodiode 1550nm PDA-1300 1550nm catv receiver
2009 - REGULATOR sw 13003

Abstract: transistor sw 13003 sw 13003 PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR SW 13003 A NMP13003 Sw 13003 c etc 13003 REGULATOR 13003
Text: Ordering number : ENA1219 NMP13003( 13003 series) SANYO Semiconductors DATA SHEET NMP13003 ( 13003 series) Features · · · · NPN Triple Diffused Planar Silicon Transistor Switching , . A1219-1/4 NMP13003( 13003 series) Continued from preceding page. Parameter Gain-Bandwidth Product , °C NMP13003( 13003 series) 7 5 hFE - IC VCE=0.7V Ta=120°C 7 5 hFE - IC VCE=5V Ta=120°C 3 , NMP13003( 13003 series) 1.2 PC - Ta 1.0 Collector Current, IC - A 0.8 0.6 0.4 0.2


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PDF ENA1219 NMP13003 NMP13003 PW300s, cycle10% A1219-4/4 REGULATOR sw 13003 transistor sw 13003 sw 13003 PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR SW 13003 A Sw 13003 c etc 13003 REGULATOR 13003
2008 - sa 13003

Abstract: 13003 X 13003 d 13003 x 13003 L H 13003 PIN photodiode responsivity 1550nm 2,5 GHz 13003 d d f 13003 13003 A
Text: Optoway PDA- 1300-3 * PDA- 1300-3 3 GHz InGaAs PIN Photodiode Module for CATV/Wireless/SAT Receiver * DESCRIPTION PDA- 1300-3 InGaAs PIN Photodiode series are high quality 3 GHz analog photodetectors designed for CATV, CDMA / W-CDMA, and Satellite receiver applications. These coaxial modules are optically aligned , /1/2007 V1.0 Optoway PDA- 1300-3


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PDF PDA-1300-3 PDA-1300-3 sa 13003 13003 X 13003 d 13003 x 13003 L H 13003 PIN photodiode responsivity 1550nm 2,5 GHz 13003 d d f 13003 13003 A
1999 - Photo Interrupters

Abstract: transistor sw 13003 ON110 ON1108 Rise time of photo transistor ON1102 CNZ1108 transistor d 1303 sw 13003 CNZ1102
Text: Transmissive Photosensors (Photo Interrupters) CNZ1102,CNZ1108 Photo Interrupters Unit : mm CNZ1102 Mark for indicating LED side 25.0±0.35 13.0±0.3 3.0±0.2 Device center Overview 7.0 min. 2.5±0.2 10.0±0.2 CNZ1102 and CNZ1108 are a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity , *2.54±0.2 3 6.2±0.2 Collector power dissipation Mark for indicating LED side 13.0±0.3 3.0±0.2


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PDF CNZ1102 CNZ1108 CNZ1102 CNZ1108 Photo Interrupters transistor sw 13003 ON110 ON1108 Rise time of photo transistor ON1102 transistor d 1303 sw 13003
1999 - Photo Interrupters

Abstract: CNZ1122 CNZ1128
Text: Transmissive Photosensors (Photo Interrupters) CNZ1122, CNZ1128 Photo Interrupters Unit : mm CNZ1122 Mark for indicating LED side 25.0±0.35 13.0±0.3 3.0±0.2 Device center Overview 7.0 min. 2.5±0.2 10.0±0.2 CNZ1122 and CNZ1128 are a photocoupler in which a visible light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as , mA Mark for indicating LED side PD*1 70 mW 13.0±0.3 3.0±0.2 mA 30 V 5


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PDF CNZ1122, CNZ1128 CNZ1122 CNZ1122 CNZ1128 Photo Interrupters
1999 - CNZ1111

Abstract: CNZ1112 transistor sw 13003
Text: detection : 0.3 mm 0.45±0.1 Device center A' Features 2.0±0.2 2.2±0.2 25.0±0.35 13.0±0.3 , current Temperature Mark for indicating LED side 13.0±0.3 5.0±0.2 A 2.0±0.2 2.2±0.2 50


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PDF CNZ1111 CNZ1112 CNZ1111 CNZ1112 transistor sw 13003
2004 - CNZ1111

Abstract: CNZ1112 ON1111 ON1112
Text: dissipation *1 Mark for indicating LED side 13.0±0.3 5.0±0.2 A 0.45±0.1 2-R0.5 A' Temperature , 2.5±0.2 10.0±0.2 13.0±0.3 5.0±0.2 A 2.2±0.2 25.0±0.35 6.0 min. CNZ1111 and CNZ1112 are


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PDF CNZ1111 ON1111) CNZ1112 ON1112) PISTR104-010 CNZ1111 CNZ1112 ON1111 ON1112
2004 - CNZ1102

Abstract: CNZ1108 ON1102 ON1108 transistor EN 13003 A
Text: Transmissive Photosensors (Photo lnterrupters) CNZ1102 (ON1102), CNZ1108 (ON1108) Photo Interrupters CNZ1102 Unit: mm Mark for indicating LED side 25.0±0.35 M Di ain sc te on na tin nc ue e/ d 13.0±0.3 Device center 2.5±0.2 7.0 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in , are detected. 3.0±0.2 10.0±0.2 Overview 19.0±0.2 6.2±0.2 13.0±0.3 VR 3 V


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PDF CNZ1102 ON1102) CNZ1108 ON1108) CNZ1102 CNZ1108 ON1102 ON1108 transistor EN 13003 A
HF 13003

Abstract: 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 HF 13002 13003 circuit H 13003
Text: Ö^SOQSb ODOSb'S? 1 TE 13002 TE 13003 Silicon NPN Power Transistors Applications: Switching mode power , 'CM •to TE 13002 300 600 TE 13003 400 700 9 1,5 3 0.75 0.75 38 150 -65.+150 3.3 V V , - — TELEFUNKEN ELECTRONIC 17E D ■OOOIbSA TE 13002 • TE 13003 ~ T-33-11 Characteristics , – VCE = 700 V TE 13003 T . = 150°C, Vr. = 600 V TE 13002 C4S0 Lc • VCE = 700 V TE 13003 Collector-emitter breakdown voltage /c= 100 mA, Lc = 125 mH TE 13002 Fig. 1,2 TE 13003 Emitter-base breakdown


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PDF T-33-11 HF 13003 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 HF 13002 13003 circuit H 13003
2004 - Not Available

Abstract: No abstract text available
Text: indicating LED side Device center 25.0±0.35 3.0±0.3 2-0.45±0.2 *9.6±0.3 3 4 13.0±0.3 3.0±0.2 7.0 min , dimension at the root of leads CNZ1108 Mark for indicating LED side 13.0±0.3 3.5±0.2 Device Center


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PDF CNZ1102 ON1102) CNZ1108 ON1108) CNZ1102 CNZ1108
2003 - rl2010

Abstract: Yageo Rl0805 RL1206 RL1206 Yageo RL0603 BU 0603 Rl0805 RL2512
Text: 13.0±0.3 13.0±0.3 15.4±1 15.4±1 Fig. 7 Reel dimension PAPER TAPE SPECIFICATION Table 4


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PDF RL0805 RL1206 RL1210 RL2010 RL2512 ynsc005 RL0603- R100mR HBK073 Yageo Rl0805 RL1206 Yageo RL0603 BU 0603 RL2512
2001 - CNZ1102

Abstract: CNZ1108 ON1102 ON1108 transistor d 1303
Text: Transmissive Photosensors (Photo Interrupters) CNZ1102, CNZ1108 (ON1102, ON1108) Photo Interrupters Unit : mm CNZ1102 Mark for indicating LED side 25.0±0.35 13.0±0.3 3.0±0.2 Device center Overview 7.0 min. 2.5±0.2 10.0±0.2 CNZ1102 and CNZ1108 are a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high , for indicating LED side 13.0±0.3 3.0±0.2 A ; ; Reverse voltage (DC) Input (Light Forward


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PDF CNZ1102, CNZ1108 ON1102, ON1108) CNZ1102 CNZ1102 CNZ1108 ON1102 ON1108 transistor d 1303
2004 - CNZ1111

Abstract: CNZ1112 ON1111 ON1112
Text: ) Forward current Power dissipation *1 Mark for indicating LED side 13.0±0.3 5.0±0.2 A 6.0 , 13.0±0.3 5.0±0.2 A 2.2±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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PDF CNZ1111 ON1111) CNZ1112 ON1112) PISTR104-010 CNZ1111 CNZ1112 ON1111 ON1112
2001 - ht 13003

Abstract: No abstract text available
Text: Transmissive Photosensors (Photo Interrupters) CNZ1122, CNZ1128 (ON1122, ON1128) Photo Interrupters CNZ1122 Unit : mm 25.0±0.35 13.0±0.3 3.0±0.2 For contactless SW, object detection Overview CNZ1122 and CNZ1128 are a photocoupler in which a visible light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two , 13.0±0.3 3.0±0.2 3.5±0.2 Collector power dissipation Operating ambient temperature Storage


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PDF CNZ1122, CNZ1128 ON1122, ON1128) CNZ1122 CNZ1122 CNZ1128 ht 13003
2004 - ON1102

Abstract: TR 13003 transistor
Text: indicating LED side Device center 25.0±0.35 3.0±0.3 2-0.45±0.2 3 4 13.0±0.3 3.0±0.2 Absolute Maximum , x. ma ht t m ion l . CNZ1108 Mark for indicating LED side 13.0±0.3 3.0±0.2 3.5±0.2 M Di ain sc


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PDF CNZ1102 ON1102) CNZ1108 ON1108) CNZ1102 CNZ1108 ON1102 TR 13003 transistor
2003 - RL1210

Abstract: No abstract text available
Text: 9.0±0.3 13.0±0.3 13.0±0.3 11.4±1 15.4±1 15.4±1 21 0.8 C B A W MSA284_a Fig. 7 Reel


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PDF RL0805 RL1206 RL1210 RL2010 RL2512 ynsc005 HBK073
transistor 13003

Abstract: PC 13003 TRANSISTOR KSE13003HE13003 NPN transistor 13003 TO-126 13003 TO-126 PC 13003 13003 TRANSISTOR transistor 13003 C HE13003 13003
Text: NPN SILICON TRANSISTOR 13003 4 100mm D180BG-00 240±20µm 1800×1800µm 2 B 320×320µm 2E 200×300µm 2 KSE13003HE13003 Ta=25 TO-126/220 Tstg-. -65~150 Tj-. 150 PC- c=25 T . 40W VCBO-. 700V VCEO-. 400V IC-DC


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PDF 100mm D180BG-00 KSE13003HE13003 O-126/220 10VIC 125VIc transistor 13003 PC 13003 TRANSISTOR KSE13003HE13003 NPN transistor 13003 TO-126 13003 TO-126 PC 13003 13003 TRANSISTOR transistor 13003 C HE13003 13003
transistor 13002

Abstract: 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR
Text: 13003 Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 , at VCE=10V, IC=100mA Collector Base Breakdown Voltage at IC=1mA 13002 at IC=5mA 13003 , Current at VCB=600V 13002 at VCB=700V 13003 Emitter Cutoff Current at VEB=9V Collector Emitter Saturation Voltage at IC=0.1A, IB=20mA 13003 VCE(sat) - - 0.4 V at IC=0.5A, IB=100mA 13002 VCE(sat) - - 0.8 V at IC=0.2A, IB=40mA 13003 VCE(sat) -


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PDF SD13002 SD13003 O-92L 100mA transistor 13002 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR
2SC5915

Abstract: 13003ts 74081 74084 PC 13003 OP73 74083 13003
Text: No. N 7 4 0 8 2SC5915 No. N 7 4 0 8 13003 2SC5915 NPN , , , MBIT Absolute Maximum Ratings / Ta=25 unit VCBO VCES 120 120 V V VCEO VEBO 50 6 V V () IC ICP 10 15 A A IB PC 2 1.65 A W 25 150 W - 55 150 min max 10 unit µA 10 560 µA Tc=25 Tj , 370-0596 11 13003 TS IM TA-100348 No.7408-1/4 2SC5915 min typ fT Cob VCE=5V, IC


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PDF 2SC5915 2069C IT05562 IT05563 IT05564 2SC5915 13003ts 74081 74084 PC 13003 OP73 74083 13003
2001 - ON1128

Abstract: CNZ1122 CNZ1128 ON1122
Text: Transmissive Photosensors (Photo Interrupters) CNZ1122, CNZ1128 (ON1122, ON1128) Photo Interrupters Unit : mm CNZ1122 Mark for indicating LED side 25.0±0.35 13.0±0.3 3.0±0.2 Device center Overview 7.0 min. 2.5±0.2 10.0±0.2 CNZ1122 and CNZ1128 are a photocoupler in which a visible light emitting diode is used as the light emitting element, and a high sensitivity , IF 25 mA Mark for indicating LED side PD*1 70 mW 13.0±0.3 3.0±0.2 mA 30


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PDF CNZ1122, CNZ1128 ON1122, ON1128) CNZ1122 CNZ1122 CNZ1128 ON1128 ON1122
2001 - ON1122

Abstract: CNZ1122 CNZ1128 ON1128 ic iR light control fast photo diode
Text: Transmissive Photosensors (Photo Interrupters) CNZ1122, CNZ1128 (ON1122, ON1128) Photo Interrupters Unit : mm CNZ1122 Mark for indicating LED side 25.0±0.35 13.0±0.3 3.0±0.2 M Di ain sc te on na tin nc ue e/ d Device center Overview 7.0 min. 2.5±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp , PD*1 70 mW 13.0±0.3 3.0±0.2 V 5 V Collector power dissipation PC*2 100


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PDF CNZ1122, CNZ1128 ON1122, ON1128) CNZ1122 CNZ1122 CNZ1128 ON1122 ON1128 ic iR light control fast photo diode
13002

Abstract: 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003
Text: 13003 Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 , =1mA 13002 at IC=5mA 13003 Collector Emitter Breakdown Voltage at IC=5mA Emitter Base Breakdown Voltage at IE=1mA Collector Cutoff Current at VCB=600V 13002 at VCB=700V 13003 Emitter Cutoff Current at VEB=9V Collector Emitter Saturation Voltage at IC=0.1A, IB=20mA 13003 VCE(sat , =0.2A, IB=40mA 13003 VCE(sat) - - 0.8 V at IC=0.1A, IB=20mA 13003 VBE(sat) -


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PDF SD13002 SD13003 O-92L 100mA 13002 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003
SW 13003

Abstract: TR 13003 ECH8605 13003ts SW 13003 A
Text: No. N 7 4 0 5 ECH8605 No. N 7 4 0 5 13003 ECH8605 P MOS 4V Absolute Maximum Ratings / Ta=25 unit VDSS VGSS - 30 ± 20 DC ID IDP PW 10µs, duty cycle 1% -4 - 40 PD PT (900mm2 × 0.8mm) 1unit (900mm2 × 0.8mm) Tch Tstg ID= - 1mA, VGS=0 VDS= - 30V, VGS=0 IGSS VGS(off) VGS= ± 16V, VDS=0 VDS= - 10V , : Drain1 SANYOECH8 370-0596 11 13003 TS IM TA-100300 No.7405-1/4 ECH8605 min Ciss Coss


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PDF ECH8605 900mm2 --10V IT05579 --40A 900mm2 IT05581 SW 13003 TR 13003 ECH8605 13003ts SW 13003 A
2009 - sw 13003

Abstract: SR 13003 REGULATOR sw 13003 13003 MOSFET SR 13003 b SR 13003 D SR 13003 K sw 13003 MOSFET REGULATOR 13003 sw 13003 A MOSFET
Text: °C/W. Application circuit November 2009 Doc ID 13003 Rev 6 1/42 www.st.com 42 , . . . . . . . . . . . . . . . . 38 Doc ID 13003 Rev 6 L5980 Contents 8 Order codes . . , Doc ID 13003 Rev 6 3/42 Pin settings L5980 1 Pin settings 1.1 Pin connection , required from Vout to FB pin. Doc ID 13003 Rev 6 L5980 Maximum ratings 2 Maximum ratings , junction-ambient (1) 60 °C/W 1. Package mounted on demonstration board. Doc ID 13003 Rev 6 5/42


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PDF L5980 L5980 sw 13003 SR 13003 REGULATOR sw 13003 13003 MOSFET SR 13003 b SR 13003 D SR 13003 K sw 13003 MOSFET REGULATOR 13003 sw 13003 A MOSFET
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