2011 - R07DS0321EJ0200
Abstract: RJP63F3DPP-M0
Text: Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching , °C R07DS0321EJ0200 Rev.2.00 May 26, 2011 Page 1 of 6 RJP63F3DPP-M0 Preliminary Electrical , Page 2 of 6 RJP63F3DPP-M0 Preliminary Main Characteristics Typical Output Characteristics (1 , °C 1 75°C 25°C 0.1 1 10 100 Collector Current IC (A) Page 3 of 6 RJP63F3DPP-M0 , ) R07DS0321EJ0200 Rev.2.00 May 26, 2011 Page 4 of 6 RJP63F3DPP-M0 Preliminary Normalized Transient
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RJP63F3DPP-M0
R07DS0321EJ0200
O-220FL
PRSS0003AF-A)
O-220FL)
R07DS0321EJ0200
RJP63F3DPP-M0
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2011 - RJP63F3
Abstract: RJP63F rjp63f3dpp RJP63F3DPP-M0 rjp63 R07DS0321EJ0200
Text: Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features , .2.00 May 26, 2011 Page 1 of 6 RJP63F3DPP-M0 Preliminary Electrical Characteristics (Ta = 25 , .2.00 May 26, 2011 Page 2 of 6 RJP63F3DPP-M0 Preliminary Main Characteristics Maximum Safe , .2.00 May 26, 2011 Page 3 of 6 RJP63F3DPP-M0 Typical Capacitance vs. Collector to Emitter Voltage , 4 of 6 Gate to Emitter Voltage VGE (V) 800 16 Capacitance C (pF) RJP63F3DPP-M0
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Original
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PDF
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RJP63F3DPP-M0
O-220FL
R07DS0321EJ0200
PRSS0003AF-A)
O-220FL)
RJP63F3
RJP63F
rjp63f3dpp
RJP63F3DPP-M0
rjp63
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