RJK2055DPA |
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Renesas Technology
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MOSFET, Switching; VDSS (V): 200; ID (A): 20; Pch : -; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2400; toff ( us) typ: -; Package: WPAK |
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PDF
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RJK2055DPA |
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Renesas Technology
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Silicon N Channel MOS FET High Speed Power Switching |
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Original |
PDF
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RJK2055DPA-00#J0 |
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Renesas Technology
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V W-PAK |
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Original |
PDF
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RJK2055DPA-00-J0 |
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Renesas Technology
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Silicon N Channel MOS FET High Speed Power Switching |
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Original |
PDF
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