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RG3216P-1002-P-T1 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
RG3216P-1002-P-T1 RG3216P-1002-P-T1 ECAD Model Susumu Resistors - Chip Resistor - Surface Mount - RES SMD 10K OHM 0.02% 1/4W 1206 Original PDF

RG3216P-1002-P-T1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - 2SJ331

Abstract: 2SJ311 MP-88 NEC 4300
Text: Dissipation (TC = 25°C) PT1 150 W Total Power Dissipation (TA = 25°C) PT2 3.0 W , > 2.2±0.2 5.45 TYP. 1.0±0.2 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain


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PDF 2SJ331 2SJ311 2SJ331 MP-88 NEC 4300
2006 - k 2370

Abstract: 2SK2369 2SK2370 MP-88 PT1140
Text: Current (DC) ID(DC) ±20 A ID(pulse) ±80 A Total Power Dissipation (TC = 25°C) PT1 , . 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2.Drain 3.Source 4


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PDF 2SK2369 2SK2369: 2SK2370: 2SK2369/2370) k 2370 2SK2370 MP-88 PT1140
2006 - D1843

Abstract: 2SK1122 MP-88 Nec AC 160
Text: = 0 V) VDSS ±40 A ID(pulse) ±160 A Total Power Dissipation (TC = 25°C) PT1 , > 2.2±0.2 5.45 TYP. 1.0±0.2 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain


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PDF 2SK1122 2SK1122 D1843 MP-88 Nec AC 160
2006 - 2SK1123

Abstract: MP-88 Nec AC 160
Text: = 0 V) VDSS ±40 A ID(pulse) ±160 A Total Power Dissipation (TC = 25°C) PT1 , . 2.2±0.2 5.45 TYP. 1.0±0.2 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2.Drain 3.Source 4


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PDF 2SK1123 2SK1123 MP-88 Nec AC 160
2006 - NEC 2506

Abstract: 2SK2367 2368 d1139 2SK2368 MP-88 D11397EJ4V0DS
Text: (TC = 25°C) PT1 120 W Total Power Dissipation (TA = 25°C) PT2 3.0 W Channel , MAX. 5.0 TYP. 20.0±0.25 1.0 TYP. 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1


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PDF 2SK2367 2SK2367: 2SK2368: 2SK2367/2368) NEC 2506 2368 d1139 2SK2368 MP-88 D11397EJ4V0DS
2SK2487

Abstract: voltage 10v vdss 150v Id 50A mos fet
Text: MOS MOS Field Effect Transistors 2SK2487 NMOSFET 2SK2487N MOS FET ±30 V Ciss = 2 100 pF VGSoff= 2.5 3.5 V TA = 25 VDSS VGS = 0 900 V VGSS VDS = 0 ± 30 V IDDC TC = 25 ± 8.0 A IDpulse PW 10 s, Duty 1 ± 20 A PT1 TC = 25 140 W PT2 TA = 25 , 5.0 TYP. 20.0±0.25 1.0 TYP. TO-3P (MP-88) 3 3.0±0.25 1.0±0.2 2.2±0.2 5.45


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PDF 2SK2487 2SK2487N D10283JJ3V0DS00 D10283JJ3V0DS MP-88) M8E02 2SK2487 voltage 10v vdss 150v Id 50A mos fet
2SK2488

Abstract: No abstract text available
Text: MOS MOS Field Effect Transistors 2SK2488 NMOSFET 2SK2488N MOS FET ±30 V Ciss = 2 900 pF VGSoff= 2.5 3.5 V TA = 25 VDSS VGS = 0 900 V VGSS VDS = 0 ± 30 V IDDC TC = 25 ± 10 A IDpulse PW 10 s, Duty 1 ± 20 A PT1 TC = 25 150 W PT2 TA = 25 , 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain


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PDF 2SK2488 2SK2488N D10284JJ3V0DS00 D10284JJ3V0DS MP-88) M8E02 2SK2488
2SK2515

Abstract: 2sk2515n
Text: 200 A PT1 TC = 25 150 W PT2 TA = 25 3.0 W Tch 150 , 4.5±0.2 3.2±0.2 4 5.0 TYP. 20.0±0.25 1.0 TYP. TO-3P (MP-88) 19 MIN. 1.0±0.2


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PDF 2SK2515 2SK2515N D10301JJ2V0DS00 D10301JJ2V0DS MP-88) M8E02 2SK2515 2sk2515n
2SK2477

Abstract: No abstract text available
Text: IDpulse PW 10 s, Duty 1 ± 30 A PT1 TC = 25 150 W PT2 TA = 25 , . 20.0±0.25 1.0 TYP. TO-3P (MP-88) 3 3.0±0.25 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1


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PDF 2SK2477 2SK2477N D10269JJ2V0DS MP-88) M8E02 2SK2477
2SK2369

Abstract: 2SK2370
Text: = 25 ± 20 A IDpulse PW 10 s, Duty 1 ± 80 A PT1 TC = 25 140 , . 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain


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PDF 2SK2369 2SK2369, 2370N 02SK23692SK2370 D13191JJ3V0DS MP-88) M8E02 2SK2370
2SK2372

Abstract: 2SK2371 2372
Text: MOS MOS Field Effect Transistors 2SK2371,2372 NMOS FET 2SK2371, 2372N MOS FET ±30 V Ciss = 3600 pF VGSoff = 2.5 3.5 V TA = 25 VGS = 0 2SK2371 450 V 2SK2372 VDSS 500 V VGSS VDS = 0 ± 30 V IDDC TC = 25 ± 25 A IDpulse PW 10 s, Duty 1 ± 100 A PT1 TC = 25 , -88) 3 3.0±0.25 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2


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PDF 2SK2371 2SK2371, 2372N 2SK2371 2SK2372 D13192JJ3V0DS00 D13192JJ3V0DS MP-88) 2SK2372 2372
2SK2361

Abstract: 2SK2362 2362N
Text: IDpulse PW 10 s, Duty 1 ± 40 A PT1 TC = 25 100 W PT2 TA = 25 , . 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain


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PDF 2SK2361 2SK2361, 2362N 2SK2361RDSon= 2SK2362RDSon= 2SK2361 2SK2362 MP-88) D11394JJ3V0DS 2SK2362 2362N
2SK2367

Abstract: 2SK2368 2368 d1139
Text: IDpulse PW 10 s, Duty 1 ± 60 A PT1 TC = 25 120 W PT2 TA = 25 , 1.0 TYP. TO-3P (MP-88) 19 MIN. 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1


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PDF 2SK2367 2SK2367, 2368N 2SK2367RDSon= 2SK2368RDSon= 2SK2367 2SK2368 50V0DS MP-88) 2SK2368 2368 d1139
2362N

Abstract: 2SK2361 2SK2362
Text: IDpulse PW 10 s, Duty 1 ± 40 A PT1 TC = 25 100 W PT2 TA = 25 , . 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain


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PDF 2SK2361 2SK2361, 2362N 2SK2361RDSon= 2SK2362RDSon= 2SK2361 2SK2362 D11394JJ3V0DS00 236V0DS 2362N 2SK2362
2SK2482

Abstract: voltage 10v vdss 150v Id 50A mos fet
Text: IDpulse PW 10 s, Duty 1 ± 12 A PT1 TC = 25 100 W PT2 TA = 25 , TYP. TO-3P (MP-88) 3 3.0±0.25 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1


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PDF 2SK2482 2SK2482N D10274JJ2V0DS MP-88) M8E02 2SK2482 voltage 10v vdss 150v Id 50A mos fet
2SK2488

Abstract: No abstract text available
Text: IDpulse PW 10 s, Duty 1 ± 20 A PT1 TC = 25 150 W PT2 TA = 25 , 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain


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PDF 2SK2488 2SK2488N D10284JJ3V0DS MP-88) M8E02 2SK2488
2SK2372

Abstract: 2SK2371
Text: TC = 25 ± 25 A IDpulse PW 10 s, Duty 1 ± 100 A PT1 TC = 25 , -88) 3 3.0±0.25 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2


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PDF 2SK2371 2SK2371, 2372N 2SK2371 2SK2372 D13192JJ3V0DS MP-88) 2SK2372
2SK2367

Abstract: 6V84 2SK2368
Text: IDpulse PW 10 s, Duty 1 ± 60 A PT1 TC = 25 120 W PT2 TA = 25 , 1.0 TYP. TO-3P (MP-88) 19 MIN. 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1


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PDF 2SK2367 2SK2367, 2368N 2SK2367RDSon= 2SK2368RDSon= 2SK2367 2SK2368 D11397JJ4V0DS00 2368V0DS 6V84 2SK2368
2SK2511

Abstract: No abstract text available
Text: A PT1 TC = 25 80 W PT2 TA = 25 3.0 W Tch 150 , 3.2±0.2 4 5.0 TYP. 20.0±0.25 1.0 TYP. TO-3P (MP-88) 19 MIN. 1.0±0.2 2.2±0.2


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PDF 2SK2511 2SK2511N D10295JJ2V0DS00 D10295JJ2V0DS MP-88) M8E02 2SK2511
2SK2511

Abstract: No abstract text available
Text: PT1 TC = 25 80 W PT2 TA = 25 3.0 W Tch 150 Tstg -55 , 3.2±0.2 4 5.0 TYP. 20.0±0.25 1.0 TYP. TO-3P (MP-88) 19 MIN. 1.0±0.2 2.2±0.2


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PDF 2SK2511 2SK2511N D10295JJ2V0DS MP-88) M8E02 2SK2511
2SK2514

Abstract: No abstract text available
Text: PT1 TC = 25 150 W PT2 TA = 25 3.0 W Tch 150 Tstg , -3P (MP-88) 19 MIN. 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2


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PDF 2SK2514 2SK2514N D10296JJ2V0DS00 D10296JJ2V0DS MP-88) M8E02 2SK2514
2SK2487

Abstract: nec 2Sk2487
Text: IDpulse PW 10 s, Duty 1 ± 20 A PT1 TC = 25 140 W PT2 TA = 25 , 5.0 TYP. 20.0±0.25 1.0 TYP. TO-3P (MP-88) 3 3.0±0.25 1.0±0.2 2.2±0.2 5.45


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PDF 2SK2487 2SK2487N D10283JJ3V0DS MP-88) M8E02 2SK2487 nec 2Sk2487
2SK2514

Abstract: No abstract text available
Text: PT1 TC = 25 150 W PT2 TA = 25 3.0 W Tch 150 Tstg , -3P (MP-88) 19 MIN. 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2


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PDF 2SK2514 2SK2514N D10296JJ2V0DS MP-88) M8E02 2SK2514
2SK2477

Abstract: No abstract text available
Text: MOS MOS Field Effect Transistors 2SK2477 NMOSFET 2SK2477N MOS FET ±30 V Ciss = 2 950 pF VGSoff= 2.5 3.5 V TA = 25 VDSS VGS = 0 800 V VGSS VDS = 0 ± 30 V IDDC TC = 25 ± 10 A IDpulse PW 10 s, Duty 1 ± 30 A PT1 TC = 25 150 W PT2 TA = 25 , . 20.0±0.25 1.0 TYP. TO-3P (MP-88) 3 3.0±0.25 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1


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PDF 2SK2477 2SK2477N D10269JJ2V0DS00 D10269JJ2V0DS MP-88) M8E02 2SK2477
2SK3307

Abstract: MP-88
Text: ID(pulse) PW10 s, Duty1% ±280 A PT1 TC = 25°C 120 W PT2 TA = 25 , 1.0 TYP. 1.0±0.2 2.2±0.2 5.45 TYP. 0.6±0.1 2.8±0.1 5.45 TYP. 1.Gate 2.Drain 3


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PDF 2SK3307 D14129JJ4V0DS00 D14129JJ4V0DS MP-88) M8E02 2SK3307 MP-88
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