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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC6910-3CST8#PBF Linear Technology LTC6910 - Digitally Controlled Programmable Gain Amplifiers in SOT-23; Package: SOT; Pins: 8; Temperature: Commercial
DC1398A-GA Linear Technology BOARD EVAL LTM9001-GA
LTC6910-1ITS8#TRM Linear Technology LTC6910 - Digitally Controlled Programmable Gain Amplifiers in SOT-23; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC6910-1CTS8#TRMPBF Linear Technology LTC6910 - Digitally Controlled Programmable Gain Amplifiers in SOT-23; Package: SOT; Pins: 8; Temperature Range: 0°C to 70°C
LTC6910-2ITS8#TRMPBF Linear Technology LTC6910 - Digitally Controlled Programmable Gain Amplifiers in SOT-23; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC6910-2CTS8 Linear Technology LTC6910 - Digitally Controlled Programmable Gain Amplifiers in SOT-23; Package: SOT; Pins: 8; Temperature Range: 0°C to 70°C

RF transistor gain 20dB Datasheets Context Search

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SiC BJT

Abstract: Transistor BC 457 bipolar transistor ghz s-parameter 4h sic rf POWER BJTs RF transistors with s-parameters NPN transistor mhz s-parameter RF Transistor s-parameter bipolar transistor s-parameter RF Bipolar Transistor
Text: RF figures of merit reported to date for any SiC bipolar transistor . The calculated maximum , SiC bipolar transistor . 50 µm Fig. 2. Micrographs of a 4-finger RF BJT with , the following formulae [14, 15]: 25 Fig. 3. I-V characteristics of a 4-finger RF transistor . IB , provisions of the copyright laws protecting it. First Demonstration of 4H-SiC RF Bipolar Junction , , University of Colorado, Boulder, CO 80309, USA 2 Abstract - 4H-SiC RF BJTs on a semi-insulating (>105


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022 JRC

Abstract: JRC 022 3BS transistor Ultrasonic amplifier schematic circuit MA-207 MA-207-CP VS109 RF transistor gain 20dB
Text: . Connection to the supply common is required for proper operation of the gain stage. An external transistor , 'Settling time is specified at a closed loop gain of 10X ( 20dB ). 'Phase margin is specified for a closed loop gain of 10X ( 20dB ). a This Material Copyrighted By Its Respective Manufacturer coniijell corp , , the gain is determined in the conventional sense, by Ri and Rf . Compensation is determined by the , gain levels below 10x, ( 20dB ), input compensation must be used for phase correction. This is shown


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PDF 200mA MA-207-CP 14-PIN MA-207 MA-207 77777T. 022 JRC JRC 022 3BS transistor Ultrasonic amplifier schematic circuit VS109 RF transistor gain 20dB
s0t23

Abstract: LNA SOT23-6 AX2232 MAX2611 SOT23-6 AM oscillator 6pin 63 sot23 6pin AB SOT23-10
Text: -Pin pMAX 8-Pin (jMAX Ultra-low noise, SiGe Ultra-low noise, SiGe Dual LNA, GSM/DCS/PCS, 20dB gain step Dual LNA, GSM/DCS/PCS, 20dB gain step, shutdown OCS/PCS LNA, 20dB gain step, shutdown VCO Buffers , . »»kiyixiyvi Array of Low-Cost RF Building Blocks Wideband Gain Blocks Part Supply Voltage (V) Current (m , ,EW MAX26B1 Supply Voltage (V) Current (m A) RF Frequency (M H z) IF Frequency (M H z) Conversion Gain , Voltage (V) Current (m A) Frequency Range (M H z) Gain (dB) Noise Figure (dB) Input IP3 (dBm) Package


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PDF MAX2640 MAX2641 AX2651+ X2652Ì 900MHz) 1900MHz) MAX2620 MAX2450 MAX2451 MAX2452 s0t23 LNA SOT23-6 AX2232 MAX2611 SOT23-6 AM oscillator 6pin 63 sot23 6pin AB SOT23-10
T3D 77

Abstract: Ultrasonic amplifier schematic circuit MA-207 MA-207-CP 0D005 power amplifers schematic 10ACL mA207
Text: . Connection to the supply common is required for proper operation of the gain stage. An external transistor , (40dB). 'Settling time is specified ata closed loop gain of 10X ( 20dB ). •Phase margin is specified for a closed loop gain of 10X ( 20dB ). J. This Material Copyrighted By Its Respective Manufacturer , In both previous examples, the gain is determined in the conventional sense, by Ri and Rf , shown below. For gain levels below 10X, ( 20dB ), input compensation must be used for phase correction


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PDF 00D0254 MA-207 200mA MA-207 MA-207, 100MHz T3D 77 Ultrasonic amplifier schematic circuit MA-207-CP 0D005 power amplifers schematic 10ACL mA207
QUALCOMM MSM

Abstract: TA0003 10MHz 10dBm oscillator gilbert
Text: translation, RF and intermediate-frequency (IF) amplification, and automatic gain control (AGC). The chip , nominal gain setting. The RF and LO input-port VSWRs are less than 1.50:1, while the LO output-port VSWR , thirdorder intercept point is +16dBm referenced to 1000. The noise figure is better than 20dB for gain , gain control characteristic is monotonic and linear over the 84dB range. Copyright 1997-2000 RF Micro , and dual-mode (analog/CDMA) handset designs, the engineers at RF Micro Devices (Greensboro, NC), in


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PDF TA0003 RF9907 -45dB 10MHz 175MHz. QUALCOMM MSM TA0003 10MHz 10dBm oscillator gilbert
Not Available

Abstract: No abstract text available
Text: loop gain of 10X ( 20dB ). ‘ Phase margin is specified for a closed loop gain of 10X ( 20dB ). V/MSec , are: In both previous examples, the gain is determined in the conventional sense, by Ri and Rf , follower. Connection to the supply common is required for proper operation of the gain stage. An external transistor can be used to gate off the signal at the output. Features 1.5GHz G A IN -B A N D W ID T H PR , gain stage provides all of the voltage gain with a single pole roll-off, up to 30MHz, where a second


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PDF 0DQ0224 MA-207 MA-207 MA-207, 100MHz
1998 - MQE9

Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
Text: incorporates two bias circuits for RF LNAs, two first mixers, a second mixer, a programmable gain amplifier , circuits for external RF transistors, whose NF and power gain can be better selected. The HD155121F has , Item LNA transistor bias current Frequency Power gain Noise figure 3rd order input intercept point Mode , HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A (Z) 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular


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PDF HD155121F ADE-207-265A HD155121F 48-pin MQE9 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
1998 - Hitachi DSA002743

Abstract: Nippon capacitors
Text: incorporates two bias circuits for RF LNAs, two first mixers, a second mixer, a programmable gain amplifier , external RF transistors, whose NF and power gain can be better selected. This circuit amplifies the RF , HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems) ADE-207-265 (Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular , (LNA) bias circuit First mixer IF amplifier and second mixer Programmable Gain Amplifier (PGA) IQ


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PDF HD155121F ADE-207-265 HD155121F 48-pin Hitachi DSA002743 Nippon capacitors
1997 - 49MHz FM transmitter

Abstract: 49MHz FM transceiver 49.86Mhz 49mhz transmitter and receiver cordless receiver 49MHz 2.4 cordless phone Transceiver IC 2SK544 KA8510 VHF Transceiver IC audio compressor expander IC 8 pin
Text: terminal of RF amplifier transistor . 55 RFC Amount of amplification can be selected using the resistor load at RF amplifier collector. It is an emitter terminal of RF amplifier transistor . The gain , when emitter of RF AMP is connected to the ground, and voltage gain on 1 Kohm of collector load is Av = 20dB It is a base terminal of RF amplifier transistor . Base of TR is biased internally to about 0.8V , capacitance - Adjustable power amp gain · FM Receiver part - Complete dual conversion circuit with RF


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PDF KA8510 64-QFP-1420C KA8510 46/49MHz 49MHz KSC1674Y 49MHz FM transmitter 49MHz FM transceiver 49.86Mhz 49mhz transmitter and receiver cordless receiver 49MHz 2.4 cordless phone Transceiver IC 2SK544 VHF Transceiver IC audio compressor expander IC 8 pin
1998 - HD155121F

Abstract: Common PCN Handset Specification Phase GSM LNA 74674 Common PCN Handset Specification v4.2 pcn 8.5 MA 68698 transceiver gsm gsm transceiver GSM ic
Text: incorporates two bias circuits for RF LNAs, two first mixers, a second mixer, a programmable gain amplifier , , whose NF and power gain can be better selected. This circuit amplifies the RF signal after selection , - Input (PCN RF ) Frequency Power gain Noise figure 3rd order input intercept , 6.5 9.5 12.5 dB RF = 940MHz, LO = 1165MHz, IF = 225MHz PCN Conversion gain 2 Note , HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A (Z) 2nd


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PDF HD155121F ADE-207-265A HD155121F 48-pin Common PCN Handset Specification Phase GSM LNA 74674 Common PCN Handset Specification v4.2 pcn 8.5 MA 68698 transceiver gsm gsm transceiver GSM ic
cordless receiver 49MHz

Abstract: 49mhz transmitter and receiver KA8810 49MHz FM transmitter 49mhz receiver ka8511Q 49.86Mhz fm audio circuit
Text: collector It is an em itter terminal of RF am plifier transistor The gain of RF AMP can be adjusted using , Adjustable power amp gain · FM Receiver part - Complete dual conversion circuit with RF amplifier - Excellent , ) amplified at RF AMP is input to this terminal. It is an collector term inal of RF am plifier transistor , connected to the ground, and vol tage gain on 1 Kohm of collector load is Av = 20dB It is a base term inal o f RF am plifier transistor . Base o f TR is biased internally to about 0.8V from the common-emitter


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PDF KA8510/11 KA8510/11 46/49MHz 49MHz 42MHz 300mVp cordless receiver 49MHz 49mhz transmitter and receiver KA8810 49MHz FM transmitter 49mhz receiver ka8511Q 49.86Mhz fm audio circuit
1999 - "Pager receiver"

Abstract: SL6619
Text: . This can be caused by inadequate RF decoupling or too much circuit gain near the transistor upper , the gain near the upper frequency of the LNA transistor . On the SL6619 reference pager receiver board , significantly different (usually higher) than that expected from the same gain measurement with the receiver RF , board fitted with the larger dual-loop antenna option, this gain is approximately 20dB in the Elena , matched 50ohm input from a signal generator. Fig. 1(a) and Fig. 1(b) indicate the receiver gain should be


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PDF AN4700 SL6619 AN4700 323MHz. SL6619. "Pager receiver"
2006 - "Pager receiver"

Abstract: SL6619
Text: . This can be caused by inadequate RF decoupling or too much circuit gain near the transistor upper , the gain near the upper frequency of the LNA transistor . On the SL6619 reference pager receiver board , significantly different (usually higher) than that expected from the same gain measurement with the receiver RF , board fitted with the larger dual-loop antenna option, this gain is approximately 20dB in the Elena , matched 50ohm input from a signal generator. Fig. 1(a) and Fig. 1(b) indicate the receiver gain should be


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PDF AN4700 SL6619 AN4700 323MHz. SL6619. "Pager receiver"
Not Available

Abstract: No abstract text available
Text: . Connection to the supply common is required for proper operation of the gain stage. An external transistor can be used to gate off the signal at the output. The single gain stage provides all of the voltage gain with a single pole roll-off, up to 30MHz, where a second pole is located. .A P P L IC A T IO , ( 20dB ). 'Phase margin is specified for a closed loop gain of 10X ( 20dB ). V/pSec GHz MHz nSecond , ) ACL = Rf /Ri The equations are based on the need to reduce the loop gain by an amount equivalent to


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PDF 0D00353 -79-fc-H MA-207 200mA MA-207
1992 - cfw 455 murata

Abstract: SL6652 CFW 455E Murata Ceramic Filter mp20 transistor murata filter cfw 455 RSSI mixer 455 CFW455E MP20 DG20
Text: Mixer RF input impedance OSC input impedance OSC input bias Mixer gain 3rd order input intercept OSC input level OSC frequency Oscillator Current sink Hfe fT IF Amplifier Gain Frequency Diff , 20 20dB SINAD 12dB SINAD RF input <500µV Tamb = 25°C See Note 2 At Vbias Rload = 1.5k , TRANSISTOR RFC 330p 200k 9 10 +1.2V 1.5k 100n LOAD RESISTOR 14 13 12 220n , ): VCC = 2.5V to 7.5V, Tamb = -30°C to +85°C, IF = 455kHz, RF = 50MHz, Quad Coil Working Q = 30 Value


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PDF SL6652 SL6652 100MHz cfw 455 murata CFW 455E Murata Ceramic Filter mp20 transistor murata filter cfw 455 RSSI mixer 455 CFW455E MP20 DG20
Not Available

Abstract: No abstract text available
Text: incorporates two LNA bias circuits for external RF transistors, whose NF and power gain can be better selected , PCN Power gain 960 PCN Frequency — 50 — ñ Note Input (PCN RF ) 1 , 1617MHz, IF = 225MHz Conversion gain 2 1 RF = 1842MHz, LO = 1617MHz, IF = 225MHz GSM â , HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems) HITACHI ADE-207-265 (Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN


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PDF HD155121F ADE-207-265 HD155121F 48-pin cop12 cop22
1992 - cfw 455e murata

Abstract: CFW 455E murata Adjustable 455KHz Ceramic Filter murata filter cfW 455 E murata ceramic filter
Text: 1.5 5 3 40 1.2 7 2.0 10 1.4 mA µV µV dB V dB 20dB SINAD 12dB SINAD RF input <500µV Tamb = , corresponding reduction of the mixer input intercept point. The RF input is a diode-biased transistor with a , AUDIO OUTPUTS VCC 39k 330p VCC OSCILLATOR TRANSISTOR +15dB (ADJUSTABLE) 100MHz MAX 19 8µA RFC 2k , 2.5V to 7.5V, Tamb = -30°C to +85°C, IF = 455kHz, RF = 50MHz, Quad Coil Working Q = 30 Value Characteristics Min. Overall Supply current Sensitivity AM rejection Vbias Co-channel rejection Mixer RF input


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PDF SL6652 SL6652 100MHz cfw 455e murata CFW 455E murata Adjustable 455KHz Ceramic Filter murata filter cfW 455 E murata ceramic filter
2003 - omni spectra test fixture

Abstract: RF transistor gain 20dB
Text: RF Power Field Effect Transistor LDMOS, 800-1000 MHz, 2W, 26V 10/31/03 Preliminary , Vdc, Id = 0.1 A) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (1) Common Source Amplifier Gain , ) 21 30 RF Power LDMOS Transistor , 800-1000 MHz, 2W, 26V MAPLST0810-002PP 10/31/03 , to 1GHz High Gain , High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase Flatness Excellent Thermal Stability Performance at 960MHz, 26Vdc Q Average Output Power: 2W min. Q Gain


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PDF MAPLST0810-002PP 960MHz, 26Vdc 960MHz) omni spectra test fixture RF transistor gain 20dB
1992 - SL6654

Abstract: plessey mixer
Text: Vbias Co-channel rejection Mixer RF input impedance OSC input impedance OSC input bias Mixer gain 3rd order input intercept OSC input level OSC frequency Oscillator Current sink Hfe fT IF Amplifier Gain , . The RF input is a diode-biased transistor with a bias current of typically 300µA. The oscillator input , TRANSISTOR 0V 40k 270p AUDIO OUTPUTS 8p2 6 20 - 40p X1 10µ 0V 220n 10p 5 2 DETECTOR 3 1µA VCC 39k 330p VCC , conditions (unless otherwise stated): VCC = 2.5V to 7.5V, Tamb = -30°C to +85°C, IF = 455kHz, RF = 50MHz


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PDF SL6654 SL6654 100MHz plessey mixer
1992 - SL6654

Abstract: SL6652 plessey mixer
Text: Vbias Co-channel rejection Mixer RF input impedance OSC input impedance OSC input bias Mixer gain , µA 500 455 MHz 90 1500 20 20dB SINAD 12dB SINAD RF input <500µV Tamb = 25°C See , mixer gain will result in a corresponding reduction of the mixer input intercept point. The RF input , C B 330p DETECTOR 3 1µA E 4 OSCILLATOR TRANSISTOR 40k AUDIO OUTPUTS , otherwise stated): VCC = 2.5V to 7.5V, Tamb = -30°C to +85°C, IF = 455kHz, RF = 50MHz, Quad Coil Working Q


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PDF SL6654 SL6654 100MHz SL6652 plessey mixer
1998 - A01 MMIC

Abstract: SIEMENS CAPACITOR C5 siemens inductor mmic a01 Siemens capacitor 0402 CAPACITOR SIEMENS "Downconverting to 116 MHz" SIEMENS filter resistor 470ohm BFP181W
Text: low) GC = 2.0dB (PLO = 0dBm, Gain = low) GC = 2.2dB (PLO = +2dBm, Gain = low) Third Order Input , Application Note No. 054 Discrete & RF Semiconductors 869 - 894 MHz Receiver Front End , high and low gain mode by changing the level at the ,Switch` pin, the difference is about 21dB. The , frequency of 116 MHz. R1 increases the current of the mixer to achieve high gain and good intermodulation , C11 R4 RF Semiconductor Group C4 IF 3 LO L3 X1 2 V2 IF L1 1 RF CAP


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PDF BFP420, CMY91 BFP183W 10dBm A01 MMIC SIEMENS CAPACITOR C5 siemens inductor mmic a01 Siemens capacitor 0402 CAPACITOR SIEMENS "Downconverting to 116 MHz" SIEMENS filter resistor 470ohm BFP181W
2006 - rf2959

Abstract: processor hbt 00 04 g transistor bc 187 pin details HDR1X
Text: (typ.) 20dB Large Signal Gain (typ.) 2.0% EVM @ +26dBm, 54Mbps (typ.) Separate Power Detect/Power Down , Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in , applications requiring more than 20dB to 22dB amplifier stage gain , the RF5163PCBA-WD Evaluation Board design may be employed to achieve higher gain combined with ultra linear RF power output for high , 'Chain' EVM < 3.8% RFMD RF2959 WLAN "g" Transciever IC RFMD RF5163 PA IC G= 20dB RF In = +6dBm; RF Out


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PDF RF5163 16-Pin, 33dBm 26dBm, 54Mbps 1800MHz 2500MHz 11b/g/n DS080403 rf2959 processor hbt 00 04 g transistor bc 187 pin details HDR1X
2006 - Not Available

Abstract: No abstract text available
Text: .) 20dB Large Signal Gain (typ.) 2.0% EVM @ +26dBm, 54Mbps (typ.) Separate Power Detect/Power Down , Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in , 2.0 % Gain 20 dB @ +6dBm RF Pin  Please see Theory of Operation. Compliance , pin 11. RF output and bias for the output stage. The power supply for the output transistor needs to , Evaluation Board The RF5163 is a two-stage device with a nominal gain of 20dB in the 2.4GHz to 2.5GHz


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PDF RF5163 16-Pin, 11b/g/n 33dBm 26dBm, 54Mbps 1800MHz 2500MHz DS110617
2006 - processor hbt 00 04 g

Abstract: transistor bc 187 pin details
Text: (typ.) 20dB Large Signal Gain (typ.) 2.0% EVM @ +26dBm, 54Mbps (typ.) Separate Power Detect/Power Down , Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in , Board The RF5163 is a two-stage device with a nominal gain of 20dB in the 2.4GHz to 2.5GHz Industrial , Transciever IC RFMD RF5163 PA IC G= 20dB RF In = +6dBm; RF Out=+26dBm EVM < 2.0% Vcc=+5Vdc RFMD RF2373 Driver , achieve the best combination of gain and ultra linear transmitter performance at an RF POUT =+26dBm.


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PDF RF5163 16-Pin, 33dBm 26dBm, 54Mbps 1800MHz 2500MHz 11b/g/n DS061114 processor hbt 00 04 g transistor bc 187 pin details
2006 - processor hbt 00 04 g

Abstract: No abstract text available
Text: Single 3.3V or 5V Power Supply +33dBm Saturated Output Power (typ.) 20dB Large Signal Gain (typ.) 2.0 , RF5163 is a two-stage device with a nominal gain of 20dB in the 2.4GHz to 2.5GHz Industrial, Scientific , linear driver amplifier stage. In applications requiring more than 20dB to 22dB amplifier stage gain , the RF5163PCBA-WD Evaluation Board design may be employed to achieve higher gain combined with ultra linear RF power , 'Chain' EVM < 3.8% RFMD RF2959 WiFi "g" Transciever IC RFMD RF5163 PA IC G= 20dB RF In = +6dBm; RF Out


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PDF RF5163 16-Pin, 33dBm 26dBm, 54Mbps 1800MHz 2500MHz 11b/g/n RF5163 DS110617 processor hbt 00 04 g
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