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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

RF transistor W2W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - SIMID02

Abstract: SIMID01 P05m diode L234N pindiode switch DECT transmitter siemens DECT siemens BAR80 BAR63-03W BAR63
Text: =23.4n H 8 R=0. 8 0 GND foronly RF ! 5 0 TR L W=W5 P=1m 0 m W= W5 P=0 m 0.5 m , P W2=W M LL=16.6m WAP=2.0m m W50=1.75m m WM=0.3m m PM=0.4m m m M M W1 =W W2


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PDF 22-NOV-94 BAR80 BAR63-03W SIMID02 SIMID01 P05m diode L234N pindiode switch DECT transmitter siemens DECT siemens BAR63-03W BAR63
2009 - RF remotecontrol schematic diagram

Abstract: TRANSISTOR 434 1 to 3 GHz bandpass filter wide band FSEM30 RF Transistor reference 2 to 3 GHz bandpass filter wide band bpf 434 mhz circuit diagram of rf 434 Miteq SMC-02 BFP460
Text: Note No. 154 ESD-Hardened BFP460 RF Transistor in a Low Cost 434 MHz LNA + Bandpass 1 ESD-Hardened BFP460 RF Transistor in a Low Cost 434 MHz LNA + Bandpass Filter Application Applications LNA , Note 4 Rev. 1.2, 2008-02-26 Application Note No. 154 ESD-Hardened BFP460 RF Transistor in a , . 1.2, 2008-02-26 Application Note No. 154 ESD-Hardened BFP460 RF Transistor in a Low Cost 434 MHz , . 1.2, 2008-02-26 Application Note No. 154 ESD-Hardened BFP460 RF Transistor in a Low Cost 434 MHz


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PDF BFP460 RF remotecontrol schematic diagram TRANSISTOR 434 1 to 3 GHz bandpass filter wide band FSEM30 RF Transistor reference 2 to 3 GHz bandpass filter wide band bpf 434 mhz circuit diagram of rf 434 Miteq SMC-02
2009 - ultra low noise RF Transistor

Abstract: BFR740F BFP740F sdars application note no. 122 infineon b 58 468 11 A 122 transistor Low Noise R.F amplifier TRANSISTOR 12 GHZ sdars lna
Text: 's BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low 1 Infineon's BFP740F Ultra Low Noise RF , , 2007-08-30 Application Note No. 122 Infineon's BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS , 's BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low Details on TSFP-4 Package. Dimensions in , RF Transistor in 2.33 GHz SDARS Low Noise Figure, Plot, 2132.5 to 2532.5 MHz. Center of Plot (x-axis , Rev. 1.2, 2007-08-30 Application Note No. 122 Infineon's BFP740F Ultra Low Noise RF Transistor in


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PDF BFP740F ultra low noise RF Transistor BFR740F sdars application note no. 122 infineon b 58 468 11 A 122 transistor Low Noise R.F amplifier TRANSISTOR 12 GHZ sdars lna
1994 - Y11E

Abstract: Using Linvill Techniques MM1941 transistor for RF amplifier and mixer small signal transistor MOTOROLA RF Transistor Selection NPN transistor 2n2221a AN238 power AN238 2N3308
Text: using a 2N2221A Motorola transistor . (2) a mixer converting a 250 MHz RF and a 300 MHz L.O. to a 50 MHz , conversion gain and source admittance for changing values of RF source admittance. For the transistor being , MM1941 MIXER 300 MHz, 250 MHz 1.8 mV R.F . INPUT N0N AGC 50 MHz 1 MATCHED TO TRANSISTOR Re (Ys , ) MATCHED TO TRANSISTOR CAPACITANCE (pF) ­8 ­6 MM1941 MIXER 300 MHz, 250 MHz 1.8 mV R.F . INPUT , or a non­AGC transistor is a function of what the individual designer desires. RF Application


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PDF AN238/D AN238 Y11E Using Linvill Techniques MM1941 transistor for RF amplifier and mixer small signal transistor MOTOROLA RF Transistor Selection NPN transistor 2n2221a AN238 power AN238 2N3308
2001 - "Phase Discriminator"

Abstract: AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
Text: power microwave transistor . RF power, phase and DC parameters are measured and recorded. Figure 2 , phase, as a function of input drive level, transistor bias, and RF modulation is displayed in figures 5 , Length vs. RF Pulse width for a Typical Production S-band transistor (AM82731-050) 24 22 20 18 , transistor bias at different ambient temperatures. The change in the insertion phase during an RF pulse is , AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS


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PDF AN569 "Phase Discriminator" AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
2001 - "Phase Discriminator"

Abstract: Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor
Text: power microwave transistor . RF power, phase and DC parameters are measured and recorded. Figure 2 , phase, as a function of input drive level, transistor bias, and RF modulation is displayed in figures 5 , Length vs. RF Pulse width for a Typical Production S-band transistor (AM82731-050) 24 22 20 18 , transistor bias at different ambient temperatures. The change in the insertion phase during an RF pulse is , AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS


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PDF AN569 "Phase Discriminator" Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor
2009 - transistor R74

Abstract: BFR740L3RH RF Bipolar Transistor bipolar transistor TR151 what is transistor RF Transistor impedance matching tunnel diode rf transistor rf power transistor
Text: 20. Auguest 2009 Technical Report TR151 Maximum RF Input Power of SiGe:C Bipolar Transistor BFR740L3RH 1 Theory Excessive RF power applied to the input of a bipolar transistor has the capability to degrade the transistor performance. The RF power translates into a voltage swing at the base of the bipolar transistor according to the input impedance of the device. If the RF voltage , well is the transistor matched to the excessive RF input power. Large signal matching generally is


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PDF BFR740L3RH TR151, TR151 transistor R74 BFR740L3RH RF Bipolar Transistor bipolar transistor TR151 what is transistor RF Transistor impedance matching tunnel diode rf transistor rf power transistor
2011 - Not Available

Abstract: No abstract text available
Text: 540ESD RF transistor . BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and , 460 RF transistor . BFP460 board This board shows BFR 360L3 in different ISM-band applications , BFR380F board BFR360F board BFR340F board RF transistor BFR 460L3 BFR 460L3 Evalboard RF transistor BFP 460 BFP 460 Evalboard RF transistor BFR 300 Family BFR 360L3 Evalboard RF , protection of LIN/CAN-bus and other industrial applications. ESD24VS2U BOARD RF transistor ESD 24VS2U


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PDF 540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3
1994 - motorola transistor

Abstract: Using Linvill Techniques for R. F. Amplifiers 2N2221 MM1941 an238 motorola Using Linvill Techniques transistor for RF amplifier and mixer 2N3308 AN238 RF Transistor Selection
Text: using a 2N2221A Motorola transistor . (2) a mixer converting a 250 MHz RF and a 300 MHz L.O. to a 50 MHz , the products referenced may be discontinued. Transistor Mixer Design Using 2-Port Parameters , design examples are discussed: a mixer circuit converting a 30 MHz RF signal to a 5 MHz IF signal using a 35 MHz L. O. injection frequency with base injection for both the L. O. and RF signals; a mixer circuit with a 250 MHz RF and a 300 MHz L. O. converting to a 50 MHz IF output signal with both base and


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PDF AN238/D AN238 motorola transistor Using Linvill Techniques for R. F. Amplifiers 2N2221 MM1941 an238 motorola Using Linvill Techniques transistor for RF amplifier and mixer 2N3308 AN238 RF Transistor Selection
germanium transistors PNP

Abstract: IBM43RF0100 FMMT2907ATA SiGe PNP SiGe PNP transistor TRANSISTOR MAKING LIST pnp germanium transistor SiGe RF TRANSISTOR lowest noise audio NPN J1 TRANSISTOR
Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium (SiGe) NPN transistor , result in a transistor with high gain, low noise, exceptional linearity, and low power consumption in a , other RF devices. This application note describes how to use the IBM43RF0100EV Evaluation Boards to evaluate the performance characteristics of the IBM43RF0100 SiGe transistor . Performance Evaluation


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PDF IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP FMMT2907ATA SiGe PNP SiGe PNP transistor TRANSISTOR MAKING LIST pnp germanium transistor SiGe RF TRANSISTOR lowest noise audio NPN J1 TRANSISTOR
2009 - transistor cross reference chart

Abstract: BFP405F to4 88 TO4 45
Text: . 148 BFP405F RF Transistor as Low Cost, Low Current (2.5 mA) 3 to4 GHz UWB Tx 1 BFP405F RF , Infineon BFP405F SIEGET RF Transistor in TSFP-4 package is shown in a low-cost transmit amplifier circuit , Application Note No. 148 BFP405F RF Transistor as Low Cost, Low Current (2.5 mA) 3 to4 GHz UWB Tx Schematic , 5 Rev. 1.2, 2008-02-21 Application Note No. 148 BFP405F RF Transistor as Low Cost, Low , Application Note No. 148 BFP405F RF Transistor as Low Cost, Low Current (2.5 mA) 3 to4 GHz UWB Tx Noise


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PDF BFP405F transistor cross reference chart to4 88 TO4 45
2009 - transistor C 2240

Abstract: transistor mw 131 2.4 ghZ rf transistor transistor cross reference chart RF TRANSISTOR BFP650F amplifier TRANSISTOR 12 GHZ INFINEON schematic diagram low power rf transistor T Infineon Technologies transistor 4 ghz
Text: Note No. 153 Infineon's BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise 1 Infineon's BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Amplifier (LNA) Application Applications , Application Note 4 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon's BFP650F RF Transistor , Application Note 5 Rev. 1.2, 2008-02-25 Application Note No. 153 Infineon's BFP650F RF Transistor , , 2008-02-25 Application Note No. 153 Infineon's BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise


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PDF BFP650F transistor C 2240 transistor mw 131 2.4 ghZ rf transistor transistor cross reference chart RF TRANSISTOR amplifier TRANSISTOR 12 GHZ INFINEON schematic diagram low power rf transistor T Infineon Technologies transistor 4 ghz
2009 - transistor t 2190

Abstract: 2110 transistor AS-2110 ultra low noise transistor SiGe PNP transistor transistor C 2240 UMTS transistor transistor 1740 transistor cross reference chart BFR740L3
Text: Ultra Low Noise SiGe:C RF Transistor as 2110 - 2170 MHz UMTS 1 BFR740L3 Ultra Low Noise SiGe:C RF , . 116 BFR740L3 Ultra Low Noise SiGe:C RF Transistor as 2110 - 2170 MHz UMTS Schematic Diagram Note , , 2007-08-30 Application Note No. 116 BFR740L3 Ultra Low Noise SiGe:C RF Transistor as 2110 - 2170 MHz , BFR740L3 Ultra Low Noise SiGe:C RF Transistor as 2110 - 2170 MHz UMTS Noise Figure, Plot, 1740 to 2540 MHz , , 2007-08-30 Application Note No. 116 BFR740L3 Ultra Low Noise SiGe:C RF Transistor as 2110 - 2170 MHz


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PDF BFR740L3 transistor t 2190 2110 transistor AS-2110 ultra low noise transistor SiGe PNP transistor transistor C 2240 UMTS transistor transistor 1740 transistor cross reference chart
2008 - 433MHZ amplifier 1w

Abstract: rfc 433mhz circuit RF POWER TRANSISTOR IS-54 MAX2601 MAX2601ESA MAX2602 MAX2602ESA RF transistors with s-parameters
Text: from a 4.8V supply. The MAX2601 is a high-performance silicon bipolar RF power transistor . The MAX2602 includes a highperformance silicon bipolar RF power transistor , and a biasing diode that matches , /15 the quiescent collector current of the RF power transistor . Supplying the biasing diode with a constant current source and connecting the diode's anode to the RF power transistor 's base ensures that the RF power transistor 's quiescent collector current remains constant through 4 CIN RFIN


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PDF 900MHz MAX2601/MAX2602 IS-54) 29dBm -28dBc MAX2601 MAX2602 MAX2601/MAX2602 433MHZ amplifier 1w rfc 433mhz circuit RF POWER TRANSISTOR IS-54 MAX2601ESA MAX2602ESA RF transistors with s-parameters
2002 - 433MHZ amplifier 1w

Abstract: rfc 433mhz circuit IS-54 RF transistors with s-parameters
Text: transistor . The MAX2602 includes a highperformance silicon bipolar RF power transistor , and a biasing diode , high-performance silicon bipolar RF power transistor and a thermally matched biasing diode that matches the power , through the biasing diode is 1/15 the quiescent collector current of the RF power transistor . Supplying , transistor 's base ensures that the RF power transistor 's quiescent collector current remains constant through , source. Connect the biasing diode to the base of the RF power transistor through a large RF impedance


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PDF 900MHz 900MHz MAX2602) MAX2601/MAX2602 MAX2601/MAX2602 101mm 004in. 1-0041A 433MHZ amplifier 1w rfc 433mhz circuit IS-54 RF transistors with s-parameters
1998 - Philips high frequency bipolar transistor with Ft

Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 , modern RF transmitting transistor . TRANSMITTING TRANSISTOR DESIGN 1.1 Die technology and design , 23 1 16 Collector Philips Semiconductors RF transmitting transistor and power , Semiconductors RF transmitting transistor and power amplifier fundamentals Transmitting transistor design , thickness being a compromise between the transistor 's RF performance and its ability to withstand certain


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PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bipolar transistor die layout RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Philips high frequency bipolar transistor NPN planar RF transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR
2013 - Not Available

Abstract: No abstract text available
Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor , www.triquint.com T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor , Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor RF Characterization â , 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Thermal and , T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Median Lifetime


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PDF T1G4012036-FS T1G4012036-FS
1997 - TRANSISTOR cBC 415

Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
Text: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device , Ericssons PTB 20105 bipolar RF power transistor . 1 vice with bond wire geometry and internal matching , layout for RF power transistor . 3 BVCER will approach BVCES, which is close to BVCBO. High , vertical RF power transistor , the silicon substrate is connected to the collector. The device area , process flow for a bipolar RF Power transistor . ballasting. It increases the saturated VCE and reduces


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PDF TED-21, TRANSISTOR cBC 415 Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
TRANSISTOR Z4

Abstract: transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z3 transistor z4 51 IRF 1470 rt230pd
Text: Power Transistor RT230PD Product Features Application · 50 ~ 4000 MHz · 18dB Gain , specifications may change without notice. Version 5.2 Power Transistor RT230PD Electrical , specifications may change without notice. Version 5.2 Power Transistor RT230PD Application Circuit , C5 C7 C6 + R1 - L2 L1 RF IN C8 L3 Z2 R2 Z1 Z3 RF OUT C10 , . Version 5.2 Power Transistor Tel : 82-31-250-5011 rfsales@rfhic.com RT230PD All


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PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 TRANSISTOR Z4 transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z3 transistor z4 51 IRF 1470
2008 - transistor C4

Abstract: No abstract text available
Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain , Power Transistor RT230PD Electrical Specifications Parameter UNIT Typical Frequency , without notice. ▪ Version 5.2 Power Transistor RT230PD Application Circuit for RT230PD(824 , + R1 - L2 L1 RF IN C8 L3 Z2 R2 Z1 Z3 RF OUT C10 RT230PD Z5 , without notice. ▪ Version 5.2 Power Transistor ▪ Tel : 82-31-250-5011 ▪ rfsales@rfhic.com


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PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor C4
1997 - 433MHZ amplifier 1w

Abstract: IS-54 MAX2601 MAX2601ESA MAX2602 MAX2602ESA IM325
Text: . The MAX2601 is a high-performance silicon bipolar RF power transistor . The MAX2602 includes a highperformance silicon bipolar RF power transistor , and a biasing diode that matches the thermal and process , high-performance silicon bipolar RF power transistor and a thermally matched biasing diode that matches the power , current through the biasing diode is 1/15 the quiescent collector current of the RF power transistor , power transistor 's base ensures that the RF power transistor 's quiescent collector current remains


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PDF 900MHz 900MHz MAX2602) MAX2601ESA MAX2602ESA MAX2602E/D MAX2601/MAX2602 101mm 004in. 433MHZ amplifier 1w IS-54 MAX2601 MAX2601ESA MAX2602 MAX2602ESA IM325
2014 - Not Available

Abstract: No abstract text available
Text: T1G4004532-FL 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • â , T1G4004532-FL 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor RF Characterization – Performance at 3.3 GHz , T1G4004532-FL 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Thermal and Reliability Information Parameter , T1G4004532-FL 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Load Pull Smith Charts (1, 2) RF performance , www.triquint.com T1G4004532-FL 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Typical Performance


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PDF T1G4004532-FL T1G4004532-FL TQGaN25
2014 - Not Available

Abstract: No abstract text available
Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • â , T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Absolute Maximum Ratings(1) Recommended , www.triquint.com T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor RF Characterization â , DC – 3.5 GHz, GaN RF Power Transistor Thermal and Reliability Information Parameter Test , , 28V DC – 3.5 GHz, GaN RF Power Transistor Load Pull Smith Charts (1, 2) RF performance that the


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PDF T2G4005528-FS T2G4005528-FS TQGaN25
2013 - Not Available

Abstract: No abstract text available
Text: T1G6001032-SM 10W, 32V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • â , www.triquint.com T1G6001032-SM 10W, 32V, DC – 6 GHz, GaN RF Power Transistor Absolute Maximum Ratings , www.triquint.com T1G6001032-SM 10W, 32V, DC – 6 GHz, GaN RF Power Transistor RF Characterization â , , GaN RF Power Transistor Load Pull Smith Charts (1, 2) RF performance that the device typically , 10W, 32V, DC – 6 GHz, GaN RF Power Transistor Typical Performance Performance is based on


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PDF T1G6001032-SM T1G6001032-SM TQGaN25
2013 - CRCW0805100F100

Abstract: Ghz dB transistor
Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • â , www.triquint.com T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor RF Characterization â , T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Thermal and Reliability Information Parameter , T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Load Pull Smith Charts (1, 2) RF performance , RF Power Transistor Typical Performance Performance is based on compromised impedance point and


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PDF T2G6000528-Q3 T2G6000528-Q3 CRCW0805100F100 Ghz dB transistor
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