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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1728HS5-5 Linear Technology IC 3-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5, PLASTIC, SOT-23, 5 PIN, Power Management Circuit
LTC2927ITS8#TRMPBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#PBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#TRM Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927CTS8 Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: 0°C to 70°C
LTC2927CTS8#PBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: 0°C to 70°C

RF NPN POWER TRANSISTOR 1000 WATT Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
CAPACITOR chip murata mtbf

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Text: NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large­signal, common , ) Intermodulation Distortion - ­ 30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor , NPN , Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 , 1/8 Watt , Chip Resistor Rohm 500 , 1 , POWER (WATTS) 10.3 Figure 2. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL


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PDF MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Not Available

Abstract: No abstract text available
Text: NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common , ) Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , Transistor , NPN , Motorola (MJD47) 2 x 330 Ω, 1/8 Watt Chip Resistors in Parallel, Rohm 100 Ω, 1/8 Watt , R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 Ω, 1/8 Watt , 2. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 5th â


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PDF MRF15030/D MRF15030 MRF15030/D*
bd136 equivalent

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF
Text: MRF20060 MRF20060S 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR MAXIMUM RATINGS Rating , Flange Mount RF 55-22, Connector, Omni Spectra Transistor , NPN , Motorola (BD135) Transistor , PNP , Bipolar Line RF Power Bipolar Transistors The MRF20060 and MRF20060S are designed for broadband , modulated and multi-carrier base station RF power amplifiers. · Guaranteed Two-tone Performance at 2000 MHz , No Degradation in Output Power MRF20060 MRF20060S 2 MOTOROLA RF DEVICE DATA B1 C1 C2, C4


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PDF MRF20060/D MRF20060 MRF20060S bd136 equivalent RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF
2003 - 2N3866A

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N3866 Transistor 2N3866 for transistor bfr96 RF 2N3866 2N6255 data 2n3866 MRF553 MRF607
Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN , To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , 15 11.4 1000 30 400 POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor , designed for VHF and UHF , RFC 5.6 OHMS 1000 VCE = -28V Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND


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PDF 2N3866 2N3866A To-39 28Vdc MRF555 2N4427 MRF4427, 2N3866A RF NPN POWER TRANSISTOR 1000 WATT Transistor 2N3866 for transistor bfr96 RF 2N3866 2N6255 data 2n3866 MRF553 MRF607
2009 - RF 2N3866

Abstract: 2N3866 2N3866A Transistor 2N3866 MRF607 MRF553 MRF4427 2N6255 2N5179 2N4427
Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN , To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 , Package RF Low Power PA, LNA, and General Purpose Discrete Selector Guide 1300 3.5 11.4 1000 , 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor , designed for VHF and UHF , SO-8 MRF3866, R1, R2 POWER MACRO MRF555 POWER MACRO MRF555T NPN NPN NPN NPN NPN NPN


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PDF 2N3866 2N3866A To-39 28Vdc Volta15 RF 2N3866 2N3866A Transistor 2N3866 MRF607 MRF553 MRF4427 2N6255 2N5179 2N4427
MM8009

Abstract: MM8008 MM8010 MM8011 38-to-38 1031W
Text: MM8009 (silicon) NPN SILICON RF POWER TRANSISTOR . designed for amplifier, frequency , €¢ High Output Power - Pout = 0.9 Watt (Min) @ f = 1.0 GHz • High Current-Gain-Bandwidth Product - fy - 1000 MHz (Min) @ lc = 50 mAdc • Ideal for Radio Sonde Applications — Pout (Oscillator) = 300 mW (Typ) @ f = 1.68 GHz NPN SILICON RF POWER TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Unit , 28 Vdc, f - 1.0 GHz) pout 0 s — Watt Power Output (Oscillator) (Figure 2) (VcE - 20 Vdc, VEB =


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PDF MM8009 MM8010 MM8011 MM8008 MM8009 MM8010 MM8011 38-to-38 1031W
NTE74HC4067

Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4553B NTE74HC165 NTE74HC4053 NTE4027B NTE4023B
Text: NTE74LS140 NTE74LS01 IC-TTL, Low Power Schottky, Quad 2-Input Pos NAND Gate w/Open Collector Outputs , , Low Power Schottky, Quad 2-Input Pos NOR Gate IC-TTL, Low Power Schottky, BCD-to-Decimal Decoder/ Drive For Lamps, Relays MOS NTE74LS03 IC-TTL, Low Power Schottky, Quad 2-Input Pos NAND Gate w/ Power Collector Outputs NTE74LS147 IC-TTL, Low Power Schottky, 10-Line Decimal-to-4-Line BCD Priority Encoder NTE74LS04 IC-TTL, Low Power Schottky, Hex Inverter NTE74LS148 NTE74LS05


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PDF NTE40175B NTE4017B NTE40182B NTE4018B NTE4001B NTE4019B NTE4001BT NTE40192B NTE4002B NTE40193B NTE74HC4067 NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4553B NTE74HC165 NTE74HC4053 NTE4027B NTE4023B
2004 - RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 transistor 2n5109 MRF553 MRF559 MRF607 2N4427
Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN , To-39 packaged VHF , NPN NPN Package Type RF Low Power PA, LNA, and General Purpose RF Discrete Selector Guide , silicon NPN transistor , designed for VHF and UHF equipment. Applications include amplifier; pre-driver , = 25º C is 1 Watt . Advanced Power Technology reserves the right to change, without notice, the , 1000 .655 95 1.02 9.8 .604 35 .320 122 Advanced Power Technology reserves


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PDF 2N5109 To-39 2N5109 MRF559 MRF4427, 2N4427 MRF553 MRF553T MRF607 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5179 transistor 2n5109 MRF553 MRF559 MRF607 2N4427
J122 MARKING

Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor D , TRANSISTOR NPN SILICON CASE 751-05, STYLE 1 SORF (SO-8) MAXIMUM RATINGS Rating C ollector-Emitter , £21/8 watt carbon R2 - 100 £2 1/8 watt carbon RFC1 - 4 - 10 mH molded choke Figure 1.175 MHz RF , Power versus Frequency MOTOROLA RF DEVICE DATA MRF4427, R2 2-725 VCE (Volts) 5.0 *C (mA , UHF equipment. · · · · · Low Cost SORF Plastic Surface Mount Package Guaranteed RF Specification - IS


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PDF MRF3866 --j10 MRF4427, J122 MARKING
erie ceramic

Abstract: mrf4427 MOTOROLA IS21I2 j1222 MRF442 transistor C 2615
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF4427 NPN Silicon RF Low Power Transistor . . . designed for amplifier, frequency multiplier, or oscillator applications in industrial , Options Available 1.0 W, 175 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating , in VHF and UHF equipment. · · · · · Low Cost SORF Plastic Surface Mount Package Guaranteed RF , Oc = 25"C unless otherwise noted.) Symbol Min Typ Max Unit MOTOROLA RF DEVICE DATA MRF4427


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PDF MRF4427 MRF3866 6-J10 6-j32 --j27 8-j22 3-j29 MRF4427 erie ceramic mrf4427 MOTOROLA IS21I2 j1222 MRF442 transistor C 2615
2001 - 100 watt fm transmitter

Abstract: 1 transistor fm transmitter 5 watt
Text: MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor . . . , contacting RF Tactical Marketing in Phoenix, AZ. MRF898 60 W, 850 ­ 960 MHz RF POWER TRANSISTOR NPN , 24 Volt, 900 MHz Characteristics Output Power = 60 Watts Power Gain = 7.0 dB Min Efficiency = 60% Min , WIRELESS RF , IF AND TRANSMITTER DEVICE DATA MRF898 5.2­295 ELECTRICAL CHARACTERISTICS - continued , Power Gain (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz) Collector Efficiency (VCC = 24 Vdc, Pout = 60 W, f =


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PDF MRF898 100 watt fm transmitter 1 transistor fm transmitter 5 watt
J417

Abstract: UHF 8 Watt 8 Watt NPN surface mount power transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed , TRANSISTOR NPN SILICON · Tape and Reel Packaging Available. R2 suffix = 2,500 units per reel CASE , equipment. · · · · Low Cost SORF Plastic Surface Mount Package Guaranteed RF Specification - IS21I2 , Erie ceramic trimmer C3 - 1000 pF ATC 100 mil chip cap. C4 - 9 .0 -3 5 pF Erie ceramic trimmer C5 - , ki l 1/8 watt carbon R2 - 100 Q 1/8 watt carbon RFC1 - 4 - 10 nH molded choke Figure 1.175 MHz


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PDF IS21I2 MRF3866 MRF4427R2 MRF4427R2 J417 UHF 8 Watt 8 Watt NPN surface mount power transistor
MRF618

Abstract: JOHANSON 2951 O17O transistor BF 697 2951C-3 Allen-Bradley 1336 AN548 CI 2951 Unelco
Text: MRF618 (SILICON) Ttie RF Line NPN SILICON RF POWER TRANSISTOR 15 W -470 MHz CONTROLLED Q RF POWER TRANSISTOR NPN SILICON . . .designee! for 12.5 Volt UHF large-signal amplifier applications in , Characteristics -Output Power = 15 Watts Minimum Gain = 6.0 dB Efficiency = 60% • 100% Tested for Load , devices are operated as class B or C RF amplifiers. A MILLIMETERS INI HES DIM MIN MAX MIN MAX A , 1.0 MHz) Cob 65 80 pF FUNCTIONAL TEST (Figure 1) Common-Emitter Amplifier Power Gain (Pout -


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PDF MRF618 FERROXCUBEVK200 MRF618 JOHANSON 2951 O17O transistor BF 697 2951C-3 Allen-Bradley 1336 AN548 CI 2951 Unelco
marking code ff SMD Transistor

Abstract: SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640
Text: TRANSISTORS, SOT-23 CASE, Pp=0.35 WATT : vCE0 "c hFE § "C fT (V) (mA) (mA) (MHz) SIMILAR TYPE NO. DESCRIPTION MIN - MAX MIN MARKING LEADED CMPT918 NPN RF OSC 15 350 20 3.0 600 C3B 2N918 CMPT2222A NPN , =1.0 WATT : CXT2222A NPN AMPL/SWITCH ko 600 100 300 150 300 CXT2222A 2N2222A CXT2907A PNP AMPL/SWITCH 60 600 100 300 150 200 CXT2907A 2N2907A CXT3019 NPN HIGH CURRENT 80 1000 100 300 150 100 CXT3019 , 300 20 250 CXT3906 2N3906 CXT4033 PNP HIGH CURRENT 80 1000 100 300 100 100 CXT4033 2N4033 CXTA14 NPN


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PDF DDQD43D OT-23, OT-89 OT-23 CMPT918 2N918 CMPT2222A CXT390A CXT3904 2N3904 marking code ff SMD Transistor SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640
Epsilam-10

Abstract: epsilam 10
Text: contacting RF Tactical Marketing in Phoenix, AZ. 60 W, 850-960 MHz RF POWER TRANSISTOR NPN SIUCON MAXIMUM , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . , 24 Volt, 900 MHz Characteristics Output Power = 60 Watts Power Gain = 7.0 dB Min Efficiency = 60% Min , Amplifier Power Gain (Vcc = 24 Vdc, Pom = 60 W, f = 900 MHz) Collector Efficiency (Vcc = 24 Vdc, Pou, = 60 W , angles) Gpb n V No Degradation in Output Power 7.0 60 7.9 65 - - dB % NOTE: 1. Value of "Cot," is


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PDF MRF898 Epsilam-10 epsilam 10
2003 - 2N4427

Abstract: 1300 NPN MRF555 MRF559 MRF607 MRF553 2N5179 2N6255 MRF4427 RF NPN POWER TRANSISTOR 1000 WATT
Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · · · · Silicon NPN , To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base , 11.4 1000 30 400 POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500 SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400 POWER MACRO , ) @ 175 MHz DESCRIPTION: Silicon NPN transistor , designed for VHF and UHF equipment. Applications


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PDF 2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF555 MRF559 MRF607 MRF553 2N5179 2N6255 MRF4427 RF NPN POWER TRANSISTOR 1000 WATT
2n4427

Abstract: 62503
Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS F eatures • • • • • • • Silicon NPN , To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1 , NPN 200 3.4 30 15 11.4 1000 30 400 POWER MACRO MRF553 NPN 175 1.5 , = 10dB (Min) @ 175 MHz DE SCRIPTIO N: Silicon NPN transistor , designed for VHF and UHF , 50 POWER MACRO MRF553T NPN 175 1.5 1 1 .5 50 12.5 16 500 T O-7 2


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PDF 2N4427 To-39 2N4427 62503
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 mallory trimmer MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
Text: frequency modulated, amplitude modulated and multi­carrier base station RF power amplifiers. 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR · Guaranteed Two­tone Performance at 2000 MHz, 26 Volts , R8 R9 R10 Board Type N Flange Mount RF 55­22, Connector, Omni Spectra Transistor , NPN , Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are , Motorola (BD136) Transistor , NPN Motorola (MJD47) Glass Teflon®, Arlon GX­0300­55­22, r = 2.55 Figure


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PDF MRF20060/D MRF20060 MRF20060S MRF20060 MRF20060S RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 mallory trimmer MJD47 RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
2N5108

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR C-111 M MOTOROLA 2N5108
Text: TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR . . designed fo r am plifier, frequency m u ltip lie r, or , · Specified 1 GHz, 28 Vdc Characteristics O u tp u t Power - 1.0 Watt M inim um Gain = 5 0 dB E fficiency = 35% Typical 1.68 GHz, 28 Vdc Characteristics O u tp u t Power = 0.3 Watt Efficiency = 15% · , - - dB Pout 1.0 35 0.3 - Watt % Watt n Pout MOTOROLA RF DEVICE DATA 2-41 2N5108 FIGURE 1 - 1 GHz RF AM PLIFIER OUTPUT POWER TEST CIRCUIT VcC" +28V dl d2 I " Input line


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PDF 2N5108 2N5108 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR C-111 M MOTOROLA 2N5108
2N5849 motorola

Abstract: 2N5849 K1245 vk200 rfc with 6 turns ti211 TRANSISTOR motorola 838 RNW transistor
Text: OCHMIOI T HiMOTb 7^33-/3 2N5849 The RF Line NPN SILICON RF POWER TRANSISTOR designed primarily for use , equipment operating at frequencies to 80 MHz Specified 12 5 Volt, 50 MHz Characteristics -Output Power = 40 Watts Minimum Gain = 7 5 dB Efficiency = 50% 40 W-50 MHz RF POWER TRANSISTOR NPN SILICON "MAXIMUM , +200 °C 'Indicates JEDEC Registered Data This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. STYLE 1 PIN !


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PDF L3fci7254 2N5849 2N5849 DQR410M 2N5849 motorola K1245 vk200 rfc with 6 turns ti211 TRANSISTOR motorola 838 RNW transistor
arco 469

Abstract: MRF429 1N4997 MRF-429
Text: , 30 MHz Characteristics - Output Power = 150 W (PEP) Minimum Gain = 13 dB Efficiency = 45% 150 W (LINEAR), 30 MHz RF POWER TRANSISTOR NPN SILICON · Intermodulation Distortion @ 150 W (PEP , MOTOROLA Order this document by MRF429/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF429 Designed primarily for high­voltage applications as a high­power , 4.0 - - Vdc Characteristic OFF CHARACTERISTICS (continued) ©MOTOROLA RF DEVICE


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PDF MRF429/D MRF429 MRF429/D* arco 469 MRF429 1N4997 MRF-429
2001 - MRF448

Abstract: 1N4997 2643021801 EQUIVALENT FOR J175
Text: Order this document by MRF448/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF448 Designed primarily for high­voltage applications as a high­power linear , Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45% 250 W, 30 MHz RF POWER TRANSISTOR NPN SILICON · Intermodulation Distortion @ 250 W (PEP) - IMD = ­30 dB (Max) · 100% Tested , Amplifier Power Gain (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, ICQ = 250 mA) Collector Efficiency (VCC


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PDF MRF448/D MRF448 MRF448 1N4997 2643021801 EQUIVALENT FOR J175
transistor j37

Abstract: Epsilam-10
Text: Ballasted for Long Life and Resistance to Metal Migration 60 W, 8 5 0 -9 6 0 MHz RF POWER TRANSISTOR NPN , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M R F898 NPN S ilico n RF P o w er T , Advanced Amplifier Concept Package Specified 24 Volt, 900 MHz Characteristics Output Power = 60 Watts Power , MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (Tq = 25°C unless otherwise noted , , f = 1.0 MHz) C0b - 60 - PF FUNCTIONAL TESTS Common-Base Amplifier Power Gain ( V c c =


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PDF MRF898 transistor j37 Epsilam-10
h1208

Abstract: equivalent transistor c 495 92CS-223S5 radiosonde TA8340 NYTRONICS choke Nytronics relay 92CM-22389 transistor C4 168 H-1208
Text: File No. 679 RF Power Transistors Solid State Division 41038 r RCA -, I TO-46 H-1208 750-mW, 1.68-GHz Oscillator Transistor Features: ■Emitter-ballasting resistors ■750-rnW oscillator power at 1.68 GHz (20 V) ■Collector connected to case ■For coaxial, stripline, and lumped-element circuits Type 41038* is an epitaxial silicon n-p-n planar transistor with overlay multiple-emitter-site construction and emitter-ballasting resistors. Intended applications for this transistor include


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PDF H-1208 750-mW, 68-GHz 750-rnW TA8340. h1208 equivalent transistor c 495 92CS-223S5 radiosonde TA8340 NYTRONICS choke Nytronics relay 92CM-22389 transistor C4 168 H-1208
M 015 j47

Abstract: Diode FAJ 32
Text: M RF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR · · · · MAXIMUM RATINGS Rating , Transistor , NPN , M otorola (BD135) Transistor , PNP, M otorola (BD136) 270 Q, Chip Resistor, 1/8 Watt , Rohm 10 , . Intermodulation Distortion versus Output Power Figure 8. Power Gain versus Output Power MOTOROLA RF DEVICE , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060R/D The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors The M R F 20 06 0R and M R F 20 06 0R S are desig ned fo r


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PDF MRF20060R/D M 015 j47 Diode FAJ 32
Supplyframe Tracking Pixel