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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT5560EDD#TRPBF Linear Technology LT5560 - 0.01MHz to 4GHz Low Power Active Mixer; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C
LT5560EDD#TR Linear Technology LT5560 - 0.01MHz to 4GHz Low Power Active Mixer; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C
LT5560EDD#PBF Linear Technology LT5560 - 0.01MHz to 4GHz Low Power Active Mixer; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C
LT5560EDD Linear Technology LT5560 - 0.01MHz to 4GHz Low Power Active Mixer; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C
LTC1728HS5-5 Linear Technology IC 3-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5, PLASTIC, SOT-23, 5 PIN, Power Management Circuit
LTC5543IUH#PBF Linear Technology LTC5543 - 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer; Package: QFN; Pins: 20; Temperature Range: -40°C to 85°C

RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: ) Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common , Transistor , NPN , Motorola (MJD47) 2 x 330 Ω, 1/8 Watt Chip Resistors in Parallel, Rohm 100 Ω, 1/8 Watt , R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 Ω, 1/8 Watt , POWER (WATTS) 9.6 Pin = 3.5 W 30 25 2.5 W 20 15 10 1.5 W VCC = 26 Vdc ICQ = 125


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PDF MRF15030/D MRF15030 MRF15030/D*
CAPACITOR chip murata mtbf

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Text: ) Intermodulation Distortion - ­ 30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large­signal, common , Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor , NPN , Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 , 1/8 Watt , Chip Resistor Rohm 500 , 1 , POWER (WATTS) 10.3 Figure 2. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL


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PDF MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
RCA-41024

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
Text: File No. 658 RF Power Transistors Solid State Vision 41024 1-W, 1- GHz Silicon N-P-N Overlay Transistor High-Gain Device for Class B- or Cooperation in UHF Circuits Features: ■1- watt output min. at 1 GHz (5 dB gain) ■For sonde applications 0.3- watt output typ. at 1.68 GHz (Vcc = 20 V) RCA-41024 is an epitaxial silicon n-p-n planar transistor of the overlay-emitter-electrode construction. It is , Ratio (Measured at 200 MHz) M 15 50 6.0 - RF Power Output Common Emitter Amplifier at 1 GHz (See


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PDF RCA-41024 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
bd136 equivalent

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF
Text: MRF20060 MRF20060S 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR MAXIMUM RATINGS Rating , ) Transistor , NPN Motorola (MJD47) Glass Teflon®, Arlon GX-0300-55-22 Figure 1. Class AB, 1.93 - 2 GHz Test , Flange Mount RF 55-22, Connector, Omni Spectra Transistor , NPN , Motorola (BD135) Transistor , PNP , Bipolar Line RF Power Bipolar Transistors The MRF20060 and MRF20060S are designed for broadband , modulated and multi-carrier base station RF power amplifiers. · Guaranteed Two-tone Performance at 2000 MHz


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PDF MRF20060/D MRF20060 MRF20060S bd136 equivalent RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ pl 032 pif FL 032 PIF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: MOTOROLA TRANSISTOR 935 bd136 transistor BD136 937 motorola MRF20030 MJD47 BD135 transistor NPN 30 watt AN 933 motorola
Text: for frequency modulated, amplitude modulated and multi­carrier base station RF power amplifiers. 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR · Specified 26 Volts, 2.0 GHz , Class AB , Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial , % Intermodulation Distortion - ­28 dBc · Typical 26 Volts, 1.88 GHz , Class AB, CW Characteristics Output Power - , Resistor, Rohm 10 , 1/2 W Resistor 10 , 1/8 W Chip Resistor, Rohm (10J) Transistor , PNP Motorola (BD136


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PDF MRF20030/D MRF20030 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ MOTOROLA TRANSISTOR 935 bd136 transistor BD136 937 motorola MRF20030 MJD47 BD135 transistor NPN 30 watt AN 933 motorola
BD135

Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Text: Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR · Specified 26 Volts, 2.0 GHz , Class AB, Two­Tones Characteristics Output Power - 30 Watts , RF OUTPUT C13 Transistor , NPN , Motorola (BD135) Transistor , PNP, Motorola (BD136) 250 W , Volts, 1.88 GHz , Class AB, CW Characteristics Output Power - 30 Watts Power Gain - 10.5 dB , multi­carrier base station RF power amplifiers. ELECTRICAL CHARACTERISTICS - continued (TC = 25°C unless


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PDF MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 mallory trimmer MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
Text: frequency modulated, amplitude modulated and multi­carrier base station RF power amplifiers. 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR · Guaranteed Two­tone Performance at 2000 MHz, 26 Volts , R8 R9 R10 Board Type N Flange Mount RF 55­22, Connector, Omni Spectra Transistor , NPN , Motorola (BD135) Transistor , PNP, Motorola (BD136) 270 W, Chip Resistor, 1/8 Watt , Rohm 10 KW, 1/4 Watt , Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are


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PDF MRF20060/D MRF20060 MRF20060S MRF20060 MRF20060S RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 mallory trimmer MJD47 RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
2N5108

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR C-111 M MOTOROLA 2N5108
Text: · Specified 1 GHz , 28 Vdc Characteristics O u tp u t Power - 1.0 Watt M inim um Gain = 5 0 dB E fficiency = 35% Typical 1.68 GHz , 28 Vdc Characteristics O u tp u t Power = 0.3 Watt Efficiency = 15% · , MOTOROLA SEM IC O N D U CTO R TECHNICAL DATA The RF Line 1.0 W - 1 GHz HIGH FREQUENCY , 28 Vdc. Ic - 102 mAdc. f - 1.0 GHz ) Power O utput IFigure 1} (Pin - 316 mW, V c e * 28 Vòc, f - 1.0 GHz ) 'C ollector Efficiency (Pin - 316 mW, V ce 28 Vdc, f « 1.0 GHz ) Power O utput (Oscillator


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PDF 2N5108 2N5108 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR C-111 M MOTOROLA 2N5108
DBT134

Abstract: No abstract text available
Text: 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR · · · · · · MAXIMUM RATINGS Rating , Bipolar Line RF Power Bipolar Transistor Designed for broadband commercial and industrial applications , for frequency modulated, amplitude modulated and m ulti-carrier base station RF power amplifiers. · Specified 26 Volts, 2.0 GHz , Class AB, Two-Tones Characteristics Output Power - 30 Watts (PEP) Power Gain , Resistor, Rohm (10J) Transistor , PNP M otorola (BD136) Transistor , NPN Motorola (MJD47) 30 Mil Glass Teflon


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PDF MRF20030R/D DBT134
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor
Text: Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These , SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FEATURES OUTLINE DIMENSIONS , OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ , VCE = 3.6 V, Class AB, Duty 1/8 · 4 PIN , 3.6 V, IC = 100 mA Output Power Power Gain Collector Efficiency VCE = 3.6 V, f = 1.9 GHZ ICq = 2 mA


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PDF NE68939 NE68939 9-j11 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: NE68839 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
Text: voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 , SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FEATURES OUTLINE DIMENSIONS , EFFICIENCY, COLLECTOR CURRENT AND POWER GAIN VS. INPUT POWER 30 25 20 15 10 5 IC GP j10 ZIN ZOUT f , Power , Pout (dBm) Collector Currents, IC (mA) C 80 -j10 60 40 20 0 8 7 6 5 4 5 10 15 20


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PDF NE69039 NE69039 -j100 24-Hour RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ NE68839 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
2N5108

Abstract: No abstract text available
Text: 2N5108 SC (XSTRS/R F) MOTOROLA T h e R F L in e 1.0 W -1 GHz HIGH FREQUEN CY TRANSISTOR NPN , Characteristics - Output Power - 1.0 Watt Minimum Gain s 5.0 d8 Efficiency 35% Typical 1.68 GHz , 28 Vdc Characteristics - Output Power = 0.3 Watt Efficiency * 15% NPN SILIC O N · . w STYLE 1 P IN ! , Common-Emitter Am plifier Power G fin {Figure 1) (Pout - 1 0 W , V c e ` 28 Vdc, lc - 102 m Adc, f - 1.0 GHz , 1.0 35 0.3 - Watt % Watt ^out MOTOROLA RF DEVICE DATA 2-41 2N5108 4bE D b3b7254


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PDF L3b72S4 2N5108 2N5108
MM8009

Abstract: MM8008 MM8010 MM8011 38-to-38 1031W
Text: mW (Typ) @ f = 1.68 GHz NPN SILICON RF POWER TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Unit , MM8009 (silicon) NPN SILICON RF POWER TRANSISTOR . designed for amplifier, frequency , €¢ High Output Power - Pout = 0.9 Watt (Min) @ f = 1.0 GHz • High Current-Gain-Bandwidth Product - fy , 28 Vdc, f - 1.0 GHz ) pout 0 s — Watt Power Output (Oscillator) (Figure 2) (VcE - 20 Vdc, VEB = , mW, VCE - 28 Vdc, f - 1.0 GHz ) 1 35 — % FIGURE 1 - 1.0 GHz POWER AMPLIFIER TEST CIRCUIT Vcc â


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PDF MM8009 MM8010 MM8011 MM8008 MM8009 MM8010 MM8011 38-to-38 1031W
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: UPC277 NE68839 NE68939 NE69039 NE69039-T1 PC2771T upc27
Text: Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle , PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS (Units in mm) · OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ , VCE = 3.6 V , ZIN ZOUT 0 Collector Currents, IC (mA) f = 1.9 GHZ , VCC = 3.6V IC = 1mA (Duty 1/8) Power


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PDF NE69039 NE69039 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ UPC277 NE68839 NE68939 NE69039-T1 PC2771T upc27
1999 - RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES · OUTPUT POWER AT 1dB , NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 , Output Power , Pout (dBm) Pout 20 C 80 60 Collector Currents, IC (mA) 25 -j10 15 IC 10 GP 5 40 20 0 8 7 6 5 4 5 10 15 20 25 30 20 10 0 -j25 -j50 -j100 Power Gain, Gp (dB


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PDF NE69039 NE69039 -j100 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
NE68839

Abstract: NE68939 NE68939-T1 NE69039 PC2771T
Text: Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle , PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE68939 OUTLINE DIMENSIONS (Units in mm) · OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ , VCE = 3.6 V , 3.6 V, IC = 100 mA P-1 Output Power TYP µA IEBO MIN VCE = 3.6 V, f = 1.9 GHZ ICq


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PDF NE68939 NE68939 9-j11 24-Hour NE68839 NE68939-T1 NE69039 PC2771T
1999 - IN510

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES · OUTPUT POWER AT 1dB , NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 , POWER 30 f = 1.9 GHZ , VCC = 3.6V IC = 1mA (Duty 1/8) 25 Pout 20 C 15 IC 10 GP 5 j10 ZIN 0 0 , 10 15 20 25 Input Power , Pin (dBm) TYPICAL DATA f = 1.9 GHz , VCC = 3.6 V, ICQ = 1 mA


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PDF NE68939 NE68939 DEC-j50 -j100 9-j11 24-Hour IN510
2000 - RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: NE68839 NE68939 NE69039 NE69039-T1 PC2771T RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
Text: Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle , PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS (Units in mm) · OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ , VCE = 3.6 V , 3.6 V, IC = 100 mA P-1 Output Power TYP µA IEBO MIN VCE = 3.6 V, f = 1.9 GHZ ICq


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PDF NE69039 NE69039 24-Hour RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ NE68839 NE68939 NE69039-T1 PC2771T RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
2000 - RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: NE68839 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 53J5 2.tx transistor PC2771T NE69039 NE68939-T1 NE68939 31J1
Text: Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle , PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE68939 OUTLINE DIMENSIONS (Units in mm) · OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ , VCE = 3.6 V , 3.6 V, IC = 100 mA P-1 Output Power TYP µA IEBO MIN VCE = 3.6 V, f = 1.9 GHZ ICq


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PDF NE68939 NE68939 9-j11 24-Hour RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ NE68839 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 53J5 2.tx transistor PC2771T NE69039 NE68939-T1 31J1
M 015 j47

Abstract: Diode FAJ 32
Text: Transistor , NPN , M otorola (BD135) Transistor , PNP, M otorola (BD136) 270 Q, Chip Resistor, 1/8 Watt , Rohm 10 , M RF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR · · · · MAXIMUM RATINGS Rating , 100 £2, 1/8 W Chip Resistor, Rohm 10 £2, 1/2 W, Resistor Transistor , PNP M otorola (BD136) Transistor , GHz Test Fixture Electrical Schem atic MOTOROLA RF DEVICE DATA MRF20060R MRF20060RS 3 ^ s u , Watt , Rohm 1.0 Q, 25 Watt , 1% Resistor, DALE 38 Q, Axial Lead, 1 W att Resistor 4.2 KQ, Chip Resistor


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PDF MRF20060R/D M 015 j47 Diode FAJ 32
1996 - TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 MSB81T1 triac MAC 97 AB solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Text: Place Mounting MRFIC0904 · Two­stage GaAs Driver/ Power Amplifier · 800 MHz to 1.0 GHz · , . Communications, Power and Signal Technologies Group (CPSTG) RF Semiconductor Division This calendar , by the same product groupings in the RF Product Portfolio: low power and high power discrete , , Silicon 1.9 GHz , 4.5 W, 26 V, Class AB 2.0 GHz , 10 W, 26 V Class A & AB, Bipolar 2.0 GHz , 30 W, 26 V , Sheet Eng. Samples Intro Date Package 1.5 GHz , Low Noise HF NPN Silicon 6.0 GHz , Low


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PDF
NE68839

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES OUTPUT POWER AT 1dB , 5 DESCRIPTION The NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to op erate from a 3.6 V supply, and deliver over 1/2 watt of power output , 10 15 20 25 (5 o- -0 input Power , Pin (dBm) TYPICAL DATA f = 1.9 GHz , Vcc = 3.6 V, Icq = , 3.6 V, Ic = 100 mA Output Power Power Gain Collector Efficiency V ce = 3 .6 V, f = 1 .9 GHz ICq = 1


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PDF NE69039 NE69039 24-Hour NE68839
2004 - RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 transistor 2n5109 MRF553 MRF559 MRF607 2N4427
Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN , To-39 packaged VHF/UHF Transistor · 1.2 GHz Current-Gain Bandwidth Product @ 50mA · 1. Emitter 2. Base 3 , NPN NPN Package Type RF Low Power PA, LNA, and General Purpose RF Discrete Selector Guide , silicon NPN transistor , designed for VHF and UHF equipment. Applications include amplifier; pre-driver , = 25º C is 1 Watt . Advanced Power Technology reserves the right to change, without notice, the


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PDF 2N5109 To-39 2N5109 MRF559 MRF4427, 2N4427 MRF553 MRF553T MRF607 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5179 transistor 2n5109 MRF553 MRF559 MRF607 2N4427
MRF9011

Abstract: MRF9011L SF-11N SF-31N 16 SOT-143 MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor , (Typ) • High Power Gain — Gpe(matched) = 13-5 dB HVp) @ f = 1 GHz • Guaranteed RF Parameters â , (Vce = 10 Vdc, lc = 5 mA, f = 1 GHz ) Figure 5 NFmin — 1.8 — dB Power Gain in 50 Ct System (Vce = , Order this data sheet by MRF9011/D MRF9011 MRF9011L SURFACE MOUNTED HIGH FREQUENCY TRANSISTOR NPN , Product (lC = 15 mAdc, Vce = 10 Vdc, f = 1 GHz ) Figure 6 fT — 3.8 — GHz Collector-Base Capacitance


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PDF OT-143 MRF9011) MRF9011L) MRF9011/D MRF9011/D MRF9011 MRF9011L SF-11N SF-31N 16 SOT-143 MOTOROLA
1999 - MMBR901L

Abstract: motorola t3 switch RF NPN POWER TRANSISTOR 2.5 GHZ MMBR901LT1 RF TRANSISTOR 1 WATT
Text: TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily , Semiconductor, Inc. ARCHIVE INFORMATION · Low Noise Figure @ f = 1.0 GHz - NF(matched) = 1.9 dB (Typ) · High Power Gain - Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz · Surface Mounted SOT­23 Offers , SURFACE MOUNTED HIGH­FREQUENCY TRANSISTOR NPN SILICON DEVICE MARKING MMBR901LT1, T3 = 7A NOTE: 1 , 5.0 mAdc, f = 1.0 GHz ) Cobo - - 1.0 pF Common­Emitter Amplifier Gain (VCC = 6.0


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PDF MMBR901LT1/D MMBR901LT1, MMBR901L motorola t3 switch RF NPN POWER TRANSISTOR 2.5 GHZ MMBR901LT1 RF TRANSISTOR 1 WATT
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