The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS

RF MOSFET CLASS AB Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - AGR045010

Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Text: RF OUTPUT PINS: 1. DRAIN 2. GATE 3. SOURCE A. Schematic ( Class AB ) (450 MHz-500 MHz) C1 C2 R1 L1 C17 C15 AGR045010 D PAD C11 C12 C16 V3 Class AB 2003 LCP , Circuit Illustrations for AGRA10E ( Class AB ) (450 MHz-500 MHz) VDD R1 FB1 VGG L1 C8 C7 , oz. copper, 30 mil thickness, r = 3.5. B. Component Layout ( Class AB ) (450 MHz-500 MHz) Figure 2. AGRA10E Test Circuit ( Class AB ) (450 MHz-500 MHz) Agere Systems Inc. 5 AGRA10E 10 W, 100 MHz


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PDF AGRA10E AGRA10E IS-95 DS04-096RFPP DS03-161RFPP) AGR045010 AGRA10EU JESD22-C101A RF MOSFET CLASS AB
2004 - tns capacitors

Abstract: capacitor F3 037 02 100B120FW500X
Text: -1.0 GHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGRA10E ( Class AB ) (450 MHz , DUT 3 C16 A. Schematic ( Class AB ) (450 MHz-500 MHz) C8 C7 C6 C5 GND C11 C12 C4 D PAD G PAD L1 C1 C2 C15 C16 C17 AGR045010 V3 Class AB 2003 LCP B. Component Layout ( Class AB ) (450 MHz-500 MHz) Figure 2. AGRA10E Test Circuit ( Class AB ) (450 MHz-500 MHz , Illustrations for AGRA10E ( Class A) (450 MHz-500 MHz) VDD VGG FB1 R1 L1 C8 C7 C6 C5 C4 C3 Z10 Z1 RF INPUT C2


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PDF AGRA10E IS-95 DS04-196RFPP DS04-096RFPP) tns capacitors capacitor F3 037 02 100B120FW500X
2004 - AGRA10E

Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
Text: ORCER RF -35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout ( Class AB ) (450 MHz-500 MHz) Figure 2. AGRA10E Test Circuit ( Class AB ) (450 MHz-500 MHz) Agere Systems Inc , Circuit Illustrations for AGRA10E ( Class AB ) (450 MHz-500 MHz) V DD L1 V GG FB1 Z10 C8 C7 , ( Class AB ) (450 MHz-500 MHz) C1 C2 R1 L1 C17 C15 AGR045010 C10 C9 C16 V3 Class AB 2003 LCP C18 C14 B1 D PAD C11 C12 C13 C3 C4 C8 C7 C6 C5 G


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PDF AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
2004 - MOSFET J162

Abstract: J473 MOSFET J147
Text: E-Mode, Lateral MOSFET Test Circuit Illustrations for AGRA10XM ( Class AB ) (450 MHz-500 MHz) VDD , ( Class AB ) (450 MHz-500 MHz) C8 C7 C6 C5 GND C11 C12 C4 D PAD G PAD L1 3 1 2 C1 C2 C15 C16 C17 AGRA10XM V1 Class AB 480 MHz L Poli 2003 s s s s ATC ® chip capacitor: C1 , -35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout ( Class AB ) (450 MHz-500 MHz) Figure 2. AGRA10 Test Circuit ( Class AB ) (450 MHz-500 MHz) Agere Systems Inc. C13 C18


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PDF AGRA10XM AGRA10 IS-95 DS03-127RFPP MOSFET J162 J473 MOSFET J147
2004 - 0203S

Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
Text: Circuit Illustrations for AGRA10XM ( Class AB ) (450 MHz-500 MHz) VDD FB1 VGG C8 C7 C6 , INPUT C2 3 C15 C16 PINS: 1. DRAIN, 2. GATE, 3. SOURCE A. Schematic ( Class AB ) (450 MHz-500 MHz) R1 2 C2 L1 3 C17 C15 C16 AGRA10XM V1 Class AB 480 MHz L Poli , Layout ( Class AB ) (450 MHz-500 MHz) Figure 2. AGRA10 Test Circuit ( Class AB ) (450 MHz-500 MHz) 4 , E-Mode, Lateral MOSFET Test Circuit Illustrations for AGRA10XM ( Class A) (450 MHz-500 MHz) VDD C9


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PDF AGRA10XM AGRA10 IS-95 DS04-139RFPP DS03-127RFPP) 0203S AGRA10XM JESD22-C101A J162 j507 MOSFET J147
2004 - MOSFET J162

Abstract: j162 MOSFET J147
Text: RF -35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout ( Class AB ) (450 MHz-500 MHz) Figure 2. AGRA10 Test Circuit ( Class AB ) (450 MHz-500 MHz) 4 C13 C18 , Data Sheet August 2004 Test Circuit Illustrations for AGRA10XM ( Class AB ) (450 MHz-500 MHz) VDD , ( Class AB ) (450 MHz-500 MHz) C8 C7 C6 C5 GND C11 C12 C4 D PAD G PAD L1 3 1 2 C1 C2 C15 C16 C17 AGRA10XM V1 Class AB 480 MHz L Poli 2003 ATC ® chip capacitor: C1, C3


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PDF AGRA10XM AGRA10 IS-95 DS04-202RFPP DS04-139RFPP) MOSFET J162 j162 MOSFET J147
2009 - AIRBORNE DME

Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Text: For Airborne DME Applications Typical device performance under Class AB mode of operation and RF , measured at 1150MHz. Typical device performance under Class AB mode of operation and RF pulse conditions , performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 1% duty cycle , Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width , Airborne DME Applications Typical device performance under Class AB mode of operation at 1090MHz and RF


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PDF HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
2010 - ERJ8GEYJ100V

Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
Text: device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 1 , performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 1% duty cycle , Applications Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs , power of 250W. Typical device performance under Class AB mode of operation and RF pulse conditions of , Class AB mode of operation at 1150MHz and RF pulse conditions of 10µs pulse width and 1% duty cycle


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PDF HVV1012-250 429-HVVi EG-01-DS09B ERJ8GEYJ100V Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
2010 - HVV1214-140

Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
Text: performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle , Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle with VDD = , performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle , Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle with VDD = , such as L-Band ground based radars. MODE Class AB FREQUENCY (MHz) 1400 VDD (V) 50 IDQ


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PDF HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
2005 - CLASS AB MOSFET RF amplifier

Abstract: mosfet amplifier class ab rf an3175 mosfet high power rf ldmos rf mosfet power amplifier mosfet class ab rf rf amplifier class a fet mosfet MOSFET amplifier RF CLASS AB DS1847 LDMOS
Text: than 360°. Distortion of the RF signal in class AB is more significant than in class A. The spectrum , DMOS (LDMOS) MOSFET . This article uses it to illustrate biasing techniques. RF Classes and Biasing , choosing a given class of commercial RF amplifiers is a tradeoff between linearity and efficiency , are shown across temperature. In class AB , designers tend to operate the bias to the left of the , Maxim/Dallas > App Notes > WIRELESS, RF , AND CABLE Keywords: DS1847, DS1848, base-station, rf


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PDF DS1847, DS1848, DS1847 com/an3175 DS1847: DS1848: AN3175, APP3175, Appnote3175, CLASS AB MOSFET RF amplifier mosfet amplifier class ab rf an3175 mosfet high power rf ldmos rf mosfet power amplifier mosfet class ab rf rf amplifier class a fet mosfet MOSFET amplifier RF CLASS AB LDMOS
2009 - capacitor 10uF/63V

Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
Text: ! TM Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse Typical device duty cycle under Class AB mode of operation and RF device was measured at 1215MHz , performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 10% duty cycle , Class AB mode of operation and RF pulse conditions of 10µs pulse width and 10% duty cycle with VDD = , mode of Typical device performance under Class AB modeoperation and RF pulsepulse conditions of 10µs


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PDF HVV0912-150 429-HVVi EG-01-DS11B capacitor 10uF/63V capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
2009 - UHF TRANSISTOR

Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
Text: ) (dB) 450 50 50 175 25.5 62 -8.5 20:1 Class AB VSWR Table 1: Typical RF , device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width width , under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with , operation and RF pulse conditions of 300µs pulse width Typical device performance under Class AB mode of


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PDF HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
D913

Abstract: UNELCO MICA CAPACITORS VK200
Text: 150 D, 1.0 W Carbon Figure 8.150 MHz Test Circuit ( Class AB ) M RF150 2-156 M O TO RO LA RF DEVICE DATA RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M R F150 RF P o w er F ield , :9 Broadband Transformer Figure 1. 30 MHz Test Circuit ( Class AB ) MRF150 2-154 M O TO RO LA , gate-to-drain (Cgd), and gate-to-source (CgS). The PN junction formed during the fabrication of the RF MOSFET


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PDF RF150 D913 UNELCO MICA CAPACITORS VK200
2008 - j152

Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7
Text: mode of operation and RF pulse conditions of 200µs pulse Typical device performance under Class AB , device was measured at 1400MHz. Typical device performance under Class AB mode of operation and RF , at 1400MHz. Typical device performance under Class AB mode of operation and RF pulse conditions of , Class AB mode of operationpulse RF pulse conditions of 200µs pulse Typical device performance under AB , was measured at 120W. Typical device performance under Class AB mode of operation and RF pulse


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PDF HVV1214-100 429-HVVi EG-01-DS06B j152 RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz 5919CC-TB-7
1998 - CLASS AB MOSFET RF amplifier

Abstract: No abstract text available
Text: . Separate bias inputs and drain feed throughs permit either Class A or Class AB biasing. Turning off the , Rugged 50 - 200 MHz 100 Watts Gain:35 dB Voltage: 24/28 VDC PERFORMANCE PARAMETER RF Output Power Frequency Range Gain Main DC Supply Bias Supply Class Efficiency Harmonics Spurious In/Out Impedance RF In/Out Connectors DC Connection Size Weight Operating Temperature Operating Humidity Vibration , (Optional) AB Linear 40% See plot <-60 dBc COMMENTS 150 Watts Saturated 40 dB typical 15 to 28 VDC


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PDF 200-50-100-35-E3 200-50-100-35-E3 CLASS AB MOSFET RF amplifier
1993 - mosfet class d

Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier
Text: MOSFET , Dashed Curves Bipolar Transistor CLASS D/E APPLICATIONS Switching mode RF power amplifiers , Figure 7. A Typical Power MOSFET Class D RF Amplifier, Arranged in Push-Pull Configuration Two types of , Common Source MOSFET Power Amplifier Circuit RF Application Reports AN860 This can be related to , normally recommended Class AB values will help and full Class A should eliminate the problem completely , percent of the rated Class AB level. Probably the main advantage with the MOS power FETs is their


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PDF AN860/D AN860 mosfet class d PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier
MOTOROLA circuit for mrf150

Abstract: UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect , ( Class AB ) MRF150 4.2-126 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA Figure 2. Power , R2 - 10 kft 1/2 W Carbon R3 - 120 f t 1/2 W Carbon Figure 8.150 MHz Test Circuit ( Class AB ) MRF150 4.2-128 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA RF POWER MOSFET , gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capaci


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PDF MRF150 MRF150 MOTOROLA circuit for mrf150 UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor
MOTOROLA circuit for mrf150

Abstract: MRF150 mrf150 equivalent UNELCO MICA CAPACITORS
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor , Broadband Transformer T2 - 1:9 Broadband Transformer Figure 1. 30 MHz Test Circuit ( Class AB ) M O T O , U, 1/2 W Carbon Figure 8.150 MHz Test Circuit ( Class AB ) M O T O R O L A R F D E V IC E DATA MRF150 2-249 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET , gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET


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PDF MRF150 MRF150 MOTOROLA circuit for mrf150 mrf150 equivalent UNELCO MICA CAPACITORS
2009 - mode 5 IFF

Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
Text: and Mode-S Applications Typical Typical performance under Class AB mode of operation and RF pulseRF , condictions of 50us pulse width device performance under Class AB mode of operation and RF and condictions of , performance under Class AB mode of operation and RF pulseRF pulse conditions of 50µs pulse Typical device performance under Class AB mode of operation and RF pulse condictions of 50us pulse width device device , under Class AB mode ofof operation and RFand RF pulse conditions of 50µs pulse Typical device


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PDF HVV1011-300 429-HVVi EG-01-DS02B EG-01-DS02B8 mode 5 IFF Coaxicom RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
D1115

Abstract: Arco 262 capacitor
Text: 8 .1 5 0 MHz Test Circuit { Class AB ) MRF140 2-228 MOTOROLA RF DEVICE DATA RF POWER MOSFET , Broadband Transformer Figure 1. 30 MHz Test Circuit ( Class AB ) MRF140 2-226 MOTOROLA RF DEVICE DATA , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field-Effect T ransistor , gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capaci , CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source


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PDF MRF140 D1115 Arco 262 capacitor
"class AB Linear"

Abstract: hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet HF20-12F
Text: . www.advancedsemiconductor.com , RF Power Transistors & MOSFETs HFSSB 50 Volt, Class AB Linear Pout Pg BIAS , configured common emitter. Class AB Linear, MOSFET P out Pg BIAS V ds Id q 0 jc PART NUMBER , amateur communication equipment. 12.5 Volt, Class AB Linear P out Pg BIAS VcE Icq 0JC PART , A ll transistors are configured common emitter. 28 Volt, Class AB Linear_ P out Pg , RF Power Transistors HFSSB ASI HF transistors are characterized for broadband amplifier


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PDF 2-30MHz HF5-12F HF5-12S HF10-12F HF10-12S HF20-12F HF20-12S HF50-12F HF50-12S HFT150-28 "class AB Linear" hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet
Not Available

Abstract: No abstract text available
Text: 1. 30 MHz Test Circuit ( Class AB ) MOTOROLA RF DEVICE DATA MRF140 2-303 POWER GAIN , M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor , - 150 U 1 0 W Carbon Figure 8. 150 MHz Test Circuit ( Class AB ) M O T O R O L A R F D E V IC E DATA M R F 1 40 2 -3 0 5 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical , fabrication of the RF MOSFET results in a junction capaci tance from drain-to-source (C^s) These capacitances


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MRF140 equivalent

Abstract: arco capacitors 262
Text: ( Class AB ) MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA MRF140 4.2-107 RF POWER MOSFET , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect , Broadband Transformer Figure 1. 30 MHz Test Circuit ( Class AB ) MOTOROLA WIRELESS SEMICONDUCTOR , gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capaci , CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source


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PDF MRF140 MRF140 equivalent arco capacitors 262
300w amplifier

Abstract: 500w audio amplifier assembling LDU400C 300w class ab amplifier RF Amplifier 500w 175 mhz ldu05 uhf 1kw amplifier fm mosfet amplifier 1kw THU2604 HF300-0130
Text: HF06-ISM HF10-0130 HF300-0130M Class Gain (dB) Pout (W) Min. AB A AB 12 22.0 22 , Class Gain (dB) Pout (W) Min. AB AB B B B B B 17.0 30.0 17 17 18 18 48 30 30 , dimensions and efficient Part # Class Gain (dB) Pout (Wrms) DAB LDL15 LDL80 AB AB 13 , THV500 Class AB A A AB AB AB AB AB Gain (dB) Pout (W) Min. 21 31.0 14.0 22 14.5 15 , AU200-D Class Gain (dB) Pout (Wps) Pout (Wrms) DVB-T Pout (Wrms) DTV-8VSB AB AB AB AB


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PDF FM500-108C 125Wrms, 250Wrms 500Wrms THV400 1-800-RF G3000/BJ MK040221 300w amplifier 500w audio amplifier assembling LDU400C 300w class ab amplifier RF Amplifier 500w 175 mhz ldu05 uhf 1kw amplifier fm mosfet amplifier 1kw THU2604 HF300-0130
RF MOSFET CLASS AB

Abstract: AN211-A motorola bipolar transistor data manual
Text: Circuit ( Class AB ) MRF141 2-234 MOTOROLA RF DEVICE DATA RF POWER MOSFET CONSIDERATIONS MOSFET , Sides, E r = 5 Figure 1. 30 MHz Test Circuit ( Class AB ) MOTOROLA RF DEVICE DATA MRF141 2-231 , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at , Output Power Nitride Passivated Die for Enhanced Reliability 150 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF


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