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ROHM Semiconductor
RB162LAM-60TR Schottky Barrier Diode 60V 40A 2-Pin Embossed Tape - Tape and Reel (Alt: RB162LAM-60TR) RB162LAM-60TR ECAD Model
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RB162LAM-60TR datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
RB162LAM-60TR RB162LAM-60TR ECAD Model Rohm Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 60V 1A PMDTM Original PDF

RB162LAM-60TR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
HPI2734C60

Abstract: No abstract text available
Text: . PART NUMBER OED —HP 12 7340 60-TR CONFIDENTIAL ItfORMATlON TIE INFORMATION C0NTANED IN THIS DOCUMENT , +O.OD " -CECiMAL PRECISION REV. PART NUMBER OED —HP 12 7340 60-TR CONFIDENTIAL ItfORNATlON TLE


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PDF HPI2734C60â 60-TR HPI2734C60
Not Available

Abstract: No abstract text available
Text: 5 1 D1 DIODE SCHOTTKY 60V 2A PMDU ROHM RB060M- 60TR RB060M-60CT-ND 6 1 SW1


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PDF BD9G101G BD9G101G. V-29V 800mohm GRM31CR61A106KA01L 490-1820-2-ND GRM188R71H153KA01D 490-1514-1-ND 015UF
2008 - UMK325

Abstract: HP150 grm188r71c474ka88 UMK325BJ105MH NP04SZB GRM31MR71H105KA88 ZXMP6A13F UMK325BJ105 led driver 200mA RB160M
Text: ZXMP6A13F DN449 F04 D1-D3: ROHM RB160M- 60TR Figure 4. Triple Buck-Boost Mode Can Drive 200mA LEDs


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PDF LT3496 500mA/DIV LT3496 CDRH3D14/HP-150 UMK325BJ105MH TMK212BJ225MG ZXMP6A13F DN449 RB160M-60TR UMK325 HP150 grm188r71c474ka88 UMK325BJ105MH NP04SZB GRM31MR71H105KA88 ZXMP6A13F UMK325BJ105 led driver 200mA RB160M
2004 - Samsung k9f1208u

Abstract: SAMSUNG NAND FLASH WSOP48 samsung nand NAND01G cache program K9F28 NAND FLASH BGA samsung 1Gb nand flash samsung FLASH BGA Samsung Electronics. NAND flash memory
Text: to Ready/Busy High (E intercepted read) max 60+tr 60+tr 50+tr ns Note: The shaded


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PDF AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH WSOP48 samsung nand NAND01G cache program K9F28 NAND FLASH BGA samsung 1Gb nand flash samsung FLASH BGA Samsung Electronics. NAND flash memory
2004 - SAMSUNG NAND FLASH

Abstract: NAND01G cache program Samsung 256 Gbit nand Samsung k9f1208u WSOP48 tbga 6x8 Package Samsung Nand NAND FLASH BGA K9F1208U0M STMicroelectronics NAND256W3A
Text: 60 ns tEHBH tCRY Chip Enable High to Ready/Busy High (E intercepted read) max 60+tr 50+tr 60+tr 50+tr ns tRP Read Enable Pulse Width tRLQV tREA Read Enable


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PDF AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH NAND01G cache program Samsung 256 Gbit nand Samsung k9f1208u WSOP48 tbga 6x8 Package Samsung Nand NAND FLASH BGA K9F1208U0M STMicroelectronics NAND256W3A
2012 - mcr03pzpz

Abstract: GRM31CB31H225 GRM31MB31H105 1094AS-10M VLF302512 VLF3025 RB160M RB060M-6 IC MARKING A60 VSON008X2030
Text: , LED current =25mA, coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 95 90 eff1 eff2 , =25mA, PWM frequency = 20 kHz, Ta=25deg coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 100.00 BD60A00NUX Vcoil vs efficiency VIN=5VTa=25 LED 8 (26V) coil 1094AS-10M(TOKO) SBD RB060M- 60TR (ROHM) LED


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PDF BD60A00NUX BD60A60NUX 600kHz mcr03pzpz GRM31CB31H225 GRM31MB31H105 1094AS-10M VLF302512 VLF3025 RB160M RB060M-6 IC MARKING A60 VSON008X2030
2006 - hynix hy27

Abstract: HY27US08561A S08561A
Text: Preliminary HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Change AC Parameter tCRY(1.8V) Before 50+tr(R/B#) 60+tr (R/B#) History , ) 80+tr(R/B#)(4) tREA 35 30 tCRY (3.3V) 50+tr(R/B#)(4) 60+tr (R/B#)(4) Aug. 08. 2005 Preliminary , 100 60+tr (R/B#) 100 (4) ns ns ns Device Resetting Time (Read / Program / Erase) Write


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PDF HY27US HY27SS 256Mbit 32Mx8bit 16Mx16bit) 256Mb hynix hy27 HY27US08561A S08561A
2012 - S11V

Abstract: GRM31MB31H105
Text: , LED current =25mA, coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 95 90 eff1 eff2 , =25mA, PWM frequency = 20 kHz, Ta=25deg coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 100.00 BD60A00NUX Vcoil vs efficiency VIN=5VTa=25 LED 8 (26V) coil 1094AS-10M(TOKO) SBD RB060M- 60TR (ROHM) LED


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PDF BD60A60NUX BD60A00NUX 600kHz S11V GRM31MB31H105
2013 - Not Available

Abstract: No abstract text available
Text: =5.0V, Coil Power=2.7V to 20V, LED 8serial, LED current =25mA, coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM , , Ta=25deg coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 100.00 BD60A00NUX Vcoil vs efficiency VIN=5V Ta=25℃ LED 8 灯(26V) coil 1094AS-10M(TOKO) SBD RB060M- 60TR (ROHM) LED current 25mA PWM


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PDF BD60A00NUX BD60A60NUX BD60A00NUX BD60A60NUX
2014 - Not Available

Abstract: No abstract text available
Text: driver ESOP8 ADT6750 ADTech D1 - Schottky Barrier Diode (2A, 60V) 3216 RB060M- 60TR


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PDF ADT6750 ADT6750 40VDC 12VAC 24VAC.
2006 - hy27us08561A

Abstract: hy27us08561 HY27 HY27US 48pin-USOP1 hynix hy27 HY27USXX561A 16Mx16Bit
Text: #) After 60+tr (R/B#) 0.1 2) Change 256Mb Package Type. - WSOP package is changed to USOP package , 80+tr(R/B#)(4) 60+tr (R/B#)(4) 0.3 1) Correct USOP figure. Nov. 07. 2005 Preliminary , High to Ready (in case of interception by CE at read) 45 60+tr (R/B#) ns (4) 100 5/10/500


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PDF HY27US HY27SS 256Mbit 32Mx8bit 16Mx16bit) 256Mb hy27us08561A hy27us08561 HY27 48pin-USOP1 hynix hy27 HY27USXX561A 16Mx16Bit
2012 - Not Available

Abstract: No abstract text available
Text: =5.0V, Coil Power=2.7V to 20V, LED 8serial, LED current =25mA, coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM , , Ta=25deg coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 100.00 BD60A00NUX Vcoil vs efficiency VIN=5V Ta=25℃ LED 8 灯(26V) coil 1094AS-10M(TOKO) SBD RB060M- 60TR (ROHM) LED current 25mA PWM


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PDF BD60A00NUX BD60A60NUX BD60A00NUX BD60A60NUX
2005 - HY27US08281A

Abstract: hynix nand 4G hy27us08281 HY27US16281A TSOP 44 nand Flash 8MX16BIT flash hynix nand HY27US hynix nand flash 128mb flash 8m*16bit
Text: After 0.3 tCRY(1.8V) 60+tr (R/B#) 60+tr (R/B#) 10 3) Add Read ID Table 4) Edit , # High to Ready (in case of interception by CE# at read) tCRY 60+tr (R/B#)(4) ns CE# High Hold


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PDF HY27US 128Mbit 16Mx8bit 8Mx16bit) HY27US08281A hynix nand 4G hy27us08281 HY27US16281A TSOP 44 nand Flash 8MX16BIT flash hynix nand hynix nand flash 128mb flash 8m*16bit
2012 - 107ma tdk

Abstract: GRM31CB31H225 mcr03pzpz RB060M-60 VLF302512
Text: 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 95 90 eff1 eff2 efficiency (%) 85 80 eff 1 = , =25deg coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 100.00 BD60A00NUX Vcoil vs efficiency VIN=5VTa=25 LED 8 (26V) coil 1094AS-10M(TOKO) SBD RB060M- 60TR (ROHM) LED current 25mA PWM frequency 20kHz 10.00


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PDF BD60A00NUX BD60A60NUX 600kHz 107ma tdk GRM31CB31H225 mcr03pzpz RB060M-60 VLF302512
2005 - HY27US08561A

Abstract: hy27us08561 hynix nand spare area HY27 HY27US hynix NAND 256Mbit HY27USXX561A hynix hy27
Text: +tr(R/B#) After 60+tr (R/B#) 0.1 2) Change 256Mb Package Type. - WSOP package is changed to , #)(4) After 0.3 tRP 15 80+tr(R/B#)(4) 60+tr (R/B#)(4) 1) Correct USOP figure , 60+tr (R/B#) ns (4) 100 5/10/500(2) 100 ns 5/10/500(2) 100 ns us ns Table


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PDF HY27US HY27SS 256Mbit 32Mx8bit 16Mx16bit) 256Mb HY27US08561A hy27us08561 hynix nand spare area HY27 hynix NAND 256Mbit HY27USXX561A hynix hy27
HY27US08121A

Abstract: HY27 HY27US hynix nand spare area
Text: tCRY(3.3V) tCRY(1.8V) tOH Before 50+tr(R/B#) 50+tr(R/B#) 15 After 60+tr (R/B , Ready (in case of interception by CE at read) 45 ns 100 (4) 100 ns (4) 60+tr (R/B


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PDF HY27US HY27SS 512Mbit 64Mx8bit 32Mx16bit) HY27US08121A HY27 hynix nand spare area
2005 - HY27US08121

Abstract: No abstract text available
Text: tCRY(3.3V) tCRY(1.8V) tOH Before 50+tr(R/B#) 50+tr(R/B#) 15 After 60+tr (R/B , ) tCRY 80+tr(R/B#)(4) 60+tr (R/B#)(4) ns CE# High Hold Time (at the last serial read)(3


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PDF HY27US HY27SS 512Mbit 64Mx8bit 32Mx16bit) HY27US08121
2004 - toshiba nand tc58

Abstract: TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND Toshiba NAND TOSHIBA part numbering samsung tc58 WSOP48 TOSHIBA Memory
Text: ns tEHBH tCRY Chip Enable High to Ready 60+tr 1000+tr ns ST Toshiba tBLBH1


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PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND Toshiba NAND TOSHIBA part numbering samsung tc58 WSOP48 TOSHIBA Memory
2004 - toshiba nand tc58

Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash TOSHIBA TC58 cmos memory -NAND Toshiba NAND samsung tc58 NAND256-A TOSHIBA part numbering VFBGA63
Text: Enable High to Ready 60+tr 1000+tr ns ST Toshiba tBLBH1 tR tRLRH Note: The


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PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 toshiba Nand flash toshiba Nand part numbering tc58 flash TOSHIBA TC58 cmos memory -NAND Toshiba NAND samsung tc58 NAND256-A TOSHIBA part numbering VFBGA63
2006 - HY27Us08121a

Abstract: HY27US HY27 48-TSOP1 HY27US08121
Text: tCRY(3.3V) tCRY(1.8V) tOH Before 50+tr(R/B#) 50+tr(R/B#) 15 After 60+tr (R/B , Ready (in case of interception by CE at read) 45 ns 100 (4) 100 ns (4) 60+tr (R/B


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PDF HY27US HY27SS 512Mbit 64Mx8bit 32Mx16bit) HY27Us08121a HY27 48-TSOP1 HY27US08121
2006 - HY27Us08121a

Abstract: RQW 130 HY27 HY27US 512-Mbit
Text: tCRY(3.3V) tCRY(1.8V) tOH Before 50+tr(R/B#) 50+tr(R/B#) 15 After 60+tr (R/B , interception by CE# at read) tCRY 80+tr(R/B#)(4) 60+tr (R/B#)(4) ns CE# High Hold Time (at the


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PDF HY27US HY27SS 512Mbit 64Mx8bit 32Mx16bit) HY27Us08121a RQW 130 HY27 512-Mbit
2012 - Not Available

Abstract: No abstract text available
Text: 8serial, LED current =25mA, coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) eff 1 = (VOUT x ILED , =25mA, PWM frequency = 20 kHz, Ta=25deg coil 1094AS-10M (TOKO), SBD RB060M- 60TR (ROHM) 0.4


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PDF BD60A00NUX BD60A60NUX BD60A00NUX BD60A60NUX
2007 - HY27US081G1M

Abstract: hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming Hynix Nand flash code hynix nand reset nand flash HYNIX Hynix E NAND
Text: ) 45 ns 100 ns (4) 60+tr (R/B#) 100 ns 5/10/500(2) 100 ns us ns Table 12


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PDF HY27US 128Mx8bit 64Mx16bit) HY27US081G1M HY27US161G1M HY27US081G1M hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming Hynix Nand flash code hynix nand reset nand flash HYNIX Hynix E NAND
2007 - 48USOP1

Abstract: HY27UF0812 HY27US08121 63FBGA HY27US HY27US0812 48pin-USOP1 hynix nand flash
Text: 60+tr (R/B#)(4) ns CE High Hold Time (at the last serial read)(3) tCEH Device Resetting


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PDF HY27US 512Mbit 64Mx8bit 32Mx16bit) 512Mb HY27US0812 HY27US1612 48USOP1 HY27UF0812 HY27US08121 63FBGA 48pin-USOP1 hynix nand flash
2013 - max17498

Abstract: RF101L2STE25 RB160M
Text: , 35V D2 RB160M- 60TR C7 2.2µF, 50V Figure 9. MAX17498A Nonisolated Multiple-Output AC-DC Power


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PDF MAX17498A/MAX17498B/MAX17498C MAX17498A MAX17498B/ MAX17498C MAX17498A/MAX17498C 250kHz, MAX17498B max17498 RF101L2STE25 RB160M
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