The Datasheet Archive

RA45H7687M1 datasheet (2)

Part Manufacturer Description Type PDF
RA45H7687M1 Mitsubishi RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO Original PDF
RA45H7687M1-101 Mitsubishi RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO Original PDF

RA45H7687M1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
341V

Abstract:
Text: Miyoshi Electronics) SUBJECT: Recommendation of the output power control for RA45H7687M1 GENERAL: Figure 1 shows recommended output power control of RA45H7687M1 , which can be controlled by VGG2 and Pin adjusters. RF OUTPUT of RA45H7687M1 can be controlled from about 1.5W to 45W by applying this system. External Resistor BATTERY Driver Amp RA45H7687M1 P in Control Amp P in & V GG1 PAD P out V , Recommended output power control block diagram for RA45H7687M1 How to supply VGG1 The internal resistor


Original
PDF AN-900-026-A RA45H7687M1 RA45H7687M1, RA45H7687M1 806MHz 20dBm 341V 22an VGG13
mitsubishi rf

Abstract:
Text: Electronics) SUBJECT: Recommendation of the output power control for RA45H7687M1 GENERAL: Figure 1 shows recommended output power control of RA45H7687M1 , which can be controlled by VGG2 and Pin adjusters. RF OUTPUT of RA45H7687M1 can be controlled from about 1.5W to 45W by applying this system. External Resistor BATTERY Driver Amp RA45H7687M1 P in Control Amp P in & V GG1 PAD P out V GG1 , power control block diagram for RA45H7687M1 How to supply VGG1 The internal resistor value in this


Original
PDF AN-900-026 RA45H7687M1 RA45H7687M1, RA45H7687M1 20dBm AN-900-026 806MHz mitsubishi rf sirf 1v GG13
2008 - 45WATT

Abstract:
Text: RA45H7687M1-101 Antistatic tray, 10 modules/tray RA45H7687M1 MITSUBISHI ELECTRIC 1/9 th 29 , RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to , : H2M RoHS COMPLIANCE · RA45H7687M1 is a RoHS compliant product. · RoHS compliance is indicate by , PRECAUTIONS RoHS COMPLIANCE RA45H7687M1 MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise


Original
PDF RA45H7687M1 764-870MHz RA45H7687M1 45-watt 870-MHz 45WATT DD 128 D transistor RA45H7687M1-101
mitsubishi Lot No

Abstract:
Text: Miyoshi Electronics) SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL: AM-AM , RA45H8994M1 and RA45H7687M1 AN-900-027-A AM-AM & AM-PM for RA45H8994M1 Freq.: 896MHz 40 40 30 , ELECTRIC Silicon RF Power Semiconductors 2/9 AM-AM, AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 , /9 AM-AM, AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 AN-900-027-A AM-AM & AM-PM for , RA45H8994M1 and RA45H7687M1 AN-900-027-A AM-AM & AM-PM for RA45H7687M1 Lot No06XXA 40 40 Gain


Original
PDF AN-900-027-A RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz mitsubishi Lot No PIN3D RA45H7687M1
mitsubishi Lot No

Abstract:
Text: ) SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL: AM-AM & AM-PM for RA45H8994M1 , Mitsubishi RF Power Semiconductors 1/9 AM-AM, AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 - AN , , AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 - AN-900-027 - AM-AM & AM-PM for RA45H8994M1 Freq , Semiconductors 3/9 AM-AM, AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 - AN-900-027 - AM-AM & AM-PM , RA45H7687M1 - AN-900-027 - AM-AM & AM-PM for RA45H7687M1 Lot No06XXA 40 40 Gain Gain [dB


Original
PDF AN-900-027 RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz mitsubishi Lot No AN-900-027 MITSUBISHI APPLICATION NOTE RF POWER RA45H7687M1
RA45H7687M1

Abstract:
Text: RF by Miyoshi Electronics) SUBJECT: Recommendation of the output power control for RA45H7687M1 GENERAL: Figure 1 shows recommended output power control of RA45H7687M1 , which can be controlled by VGG2 and Pin adjusters. RF OUTPUT of RA45H7687M1 can be controlled from about 1.5W to 45W by applying this system. External Resistor BATTERY Driver Amp RA45H7687M1 P in Control Amp P in & V GG1 PAD , Recommended output power control block diagram for RA45H7687M1 How to supply VGG1 The internal resistor


Original
PDF AN-900-026-B RA45H7687M1 RA45H7687M1, RA45H7687M1 20dBm 806MHz
2011 - Not Available

Abstract:
Text: electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA45H7687M1-101 Antistatic tray, 10 modules/tray 1 < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance , < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8 , COMPLIANCE • RA45H7687M1 is a RoHS compliant product. • RoHS compliance is indicate by the letter “Gâ


Original
PDF RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz
2011 - Not Available

Abstract:
Text: electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA45H7687M1-101 SUPPLY FORM Antistatic tray, 10 modules/tray Publication Date : Oct2011 1 < Silicon RF Power Modules > RA45H7687M1 RoHS , < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8 , power. RoHS COMPLIANCE · RA45H7687M1 is a RoHS compliant product. · RoHS compliance is indicate by the


Original
PDF RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz Oct2011
2007 - d408

Abstract:
Text: RA45H7687M1-101 Antistatic tray, 10 modules/tray RA45H7687M1 MITSUBISHI ELECTRIC 1/9 th 18 , RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to , : H2M RoHS COMPLIANCE · RA45H7687M1 is a RoHS compliant product. · RoHS compliance is indicate by , PRECAUTIONS RoHS COMPLIANCE RA45H7687M1 MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise


Original
PDF RA45H7687M1 764-870MHz RA45H7687M1 45-watt 870-MHz d408 DD 128 D transistor GG13 LT 7212 MHz-860 DD 128 transistor RA45H7687M1-101
2010 - RA45H7687M1

Abstract:
Text: RA45H7687M1-101 Antistatic tray, 10 modules/tray 25 Jun 2010 RA45H7687M1 1/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H7687M1 , RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to , CODE: H2M RoHS COMPLIANCE · RA45H7687M1 is a RoHS compliant product. · RoHS compliance is indicate


Original
PDF RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz RA45H7687M1-101
2009 - RA45H7687M1

Abstract:
Text: RA45H7687M1-101 Antistatic tray, 10 modules/tray RA45H7687M1 MITSUBISHI ELECTRIC 1/9 7 Dec 2009 , RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to , : H2M RoHS COMPLIANCE · RA45H7687M1 is a RoHS compliant product. · RoHS compliance is indicate by , RA45H7687M1 MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER


Original
PDF RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz RA45H7687M1-101 RF MOSFET MODULE
AN-900-027-B

Abstract:
Text: RF by Miyoshi Electronics) SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 , for RA45H8994M1 and RA45H7687M1 AN-900-027-B AM-AM & AM-PM for RA45H8994M1 Freq.: 896MHz 40 , Power Semiconductors 2/9 AM-AM, AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 AN , RA45H7687M1 AN-900-027-B AM-AM & AM-PM for RA45H8994M1 Freq.: 941MHz 30 20 Gain [dB]Relative , , AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 AN-900-027-B AM-AM & AM-PM for RA45H7687M1 Lot


Original
PDF AN-900-027-B RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz AN-900-027-B RA45H7687M1
Supplyframe Tracking Pixel