R1RW0416D |
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Renesas Technology
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4M High Speed SRAM (256-kword x 16-bit) |
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PDF
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R1RW0416DGE-2LR |
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Renesas Technology
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Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status: Remarks: |
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PDF
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R1RW0416DGE-2LR |
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Renesas Technology
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4M High Speed SRAM (256-kword x 16-bit) |
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Original |
PDF
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R1RW0416DGE-2PI |
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Renesas Technology
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4M High Speed SRAM (256-kword x 16-bit) |
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PDF
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R1RW0416DGE-2PI#B0 |
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Renesas Electronics America
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Integrated Circuits (ICs) - Memory - IC SRAM 4M FAST 44-SOJ |
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PDF
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R1RW0416DGE-2PR |
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Renesas Technology
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Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status: Remarks: |
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Original |
PDF
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R1RW0416DGE-2PR |
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Renesas Technology
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4M High Speed SRAM (256-kword x 16-bit) |
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Original |
PDF
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R1RW0416DGE-2PR#B0 |
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Renesas Electronics America
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Integrated Circuits (ICs) - Memory - IC SRAM 4M FAST 44-SOJ |
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Original |
PDF
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R1RW0416DI |
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Renesas Technology
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Wide Temperature Range Version 4M High Speed SRAM (256-kword x 16-bit) |
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PDF
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R1RW0416DI Series |
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Renesas Technology
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Wide Temperature Range Version 4M High Speed SRAM (256-kword x 16-bit) |
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Original |
PDF
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R1RW0416DSB-2LR |
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Renesas Technology
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Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status: Remarks: |
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PDF
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R1RW0416DSB-2LR |
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Renesas Technology
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4M High Speed SRAM (256-kword x 16-bit) |
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Original |
PDF
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R1RW0416DSB-2LR#B0 |
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Renesas Electronics America
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Integrated Circuits (ICs) - Memory - IC SRAM IBIS ASYNC |
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Original |
PDF
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R1RW0416DSB-2LR#D1 |
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Renesas Electronics America
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Integrated Circuits (ICs) - Memory - IC SRAM IBIS ASYNC |
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Original |
PDF
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R1RW0416DSB-2PI |
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Renesas Technology
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4M High Speed SRAM (256-kword x 16-bit) |
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Original |
PDF
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R1RW0416DSB-2PI#B0 |
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Renesas Electronics America
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Integrated Circuits (ICs) - Memory - IC SRAM IBIS ASYNC |
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Original |
PDF
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R1RW0416DSB-2PI#D0 |
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Renesas Electronics America
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Integrated Circuits (ICs) - Memory - IC SRAM 4M PARALLEL 44TSOP II |
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Original |
PDF
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R1RW0416DSB-2PI#D1 |
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Renesas Electronics America
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Integrated Circuits (ICs) - Memory - IC SRAM 4M PARALLEL 44TSOP II |
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Original |
PDF
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R1RW0416DSB-2PR |
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Renesas Technology
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Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status: Remarks: |
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Original |
PDF
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R1RW0416DSB-2PR |
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Renesas Technology
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4M High Speed SRAM (256-kword x 16-bit) |
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Original |
PDF
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