R1LV0416D
Renesas Technology
4M SRAM (256-kword x 16-bit)
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R1LV0416DBG-5SI
Renesas Technology
4M SRAM (256-kword x 16-bit)
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R1LV0416DBG-5SI#B0
Renesas Technology
Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 48CSP
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R1LV0416DBG-5SI#S0
Renesas Technology
Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 48FBGA
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R1LV0416DBG-7LI
Renesas Technology
Low Power SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: CSP (48)
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R1LV0416DBG-7LI#B0
Renesas Technology
Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 48FBGA
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R1LV0416DBG-7LI#S0
Renesas Technology
Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 48FBGA
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R1LV0416DSB-5SI
Renesas Technology
4M SRAM (256-kword x 16-bit)
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R1LV0416DSB-5SI#B0
Renesas Technology
Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 44TSOP
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R1LV0416DSB-5SI#S0
Renesas Technology
Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 44TSOP
Original
PDF
R1LV0416DSB-7LI
Renesas Technology
4M SRAM (256-kword x 16-bit)
Original
PDF
R1LV0416DSB-7LI#B0
Renesas Technology
Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 44TSOP
Original
PDF
R1LV0416DSB-7LI#S0
Renesas Technology
Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 48FBGA
Original
PDF