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Siemens DIODE E 1220

Abstract: VPT09050
Text: SIEMENS SIPMOS® Power Transistor · N-Channel · Enhancement mode · Avalanche rated · Logic Level · dvld t rated SPD28N03L SPU28N03L /X © VPT09050 VPT09051 Pin 1 G ffDS(on) 0.028 ÇI 0.018 Q . (5) VGS Package P-T0252 Pin 2 D Pin 3 S · 175°C operating temperature Type SPD28N03L SPU28N03L ^DS 30 V b 28 A Ordering Code Q67040-S4139-A2 ^GS = 4 5 V P-T0251 -3-1 Q67040-S4142-A2 Vqs = 10 V Maximum Ratings, at T\ = 25 °C, unless otherwise specified Parameter Continuous drain current


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PDF SPD28N03L SPU28N03L VPT09050 VPT09051 P-T0252 Q67040-S4139-A2 P-T0251 Q67040-S4142-A2 Siemens DIODE E 1220
1997 - s4142

Abstract: transistor smd MJ 145 P-TO251-3-1 P-TO252 SPD28N03L SPU28N03L
Text: SPD28N03L SPU28N03L Preliminary data SIPMOS ® Power Transistor · N-Channel · Enhancement mode · Avalanche rated · Logic Level · dv/dt rated Pin 1 Type VDS ID SPD28N03L 30 V RDS(on) 28 A Pin 3 G · 175°C operating temperature Pin 2 D S Package Ordering Code P-TO252 @ VGS Q67040-S4139-A2 0.028 VGS = 4.5 V P-TO251-3-1 Q67040-S4142-A2 0.018 SPU28N03L VGS = 10 V Maximum Ratings, at Tj = 25 °C, unless otherwise specified


Original
PDF SPD28N03L SPU28N03L P-TO252 Q67040-S4139-A2 P-TO251-3-1 Q67040-S4142-A2 s4142 transistor smd MJ 145 P-TO252 SPD28N03L SPU28N03L
1999 - 28n03l

Abstract: 28n03 P-TO251-3-1 P-TO252 SPD28N03L SPU28N03L Q67040-S4142-A2 a6024
Text: SPD 28N03L SIPMOS® Power Transistor Features Product Summary · N channel Drain source voltage VDS · Drain-Source on-state resistance RDS(on) 0.018 Continuous drain current ID Enhancement mode · Avalanche rated 30 V 30 A · Logic Level · dv/dt rated · 175°C operating temperature Type Package Ordering Code Packaging SPD28N03L P-TO252 Q67040-S4139-A2 Tape and Reel SPU28N03L Pin 1 Pin 2 Pin 3 P-TO251-3-1 Q67040-S4142-A2 Tube G D


Original
PDF 28N03L SPD28N03L P-TO252 Q67040-S4139-A2 SPU28N03L P-TO251-3-1 Q67040-S4142-A2 28n03l 28n03 P-TO252 SPD28N03L SPU28N03L a6024
kd smd transistor

Abstract: No abstract text available
Text: » •— SPD 28N03L Infineon technologies SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS(on) 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated 30 V • Logic Level • dv/dt rated • 175°C operating temperature Ordering Code Pin 1 Package SPD28N03L Pin 2 Pin 3 G Packaging Type D S Q67040-S4139-A2


OCR Scan
PDF 28N03L SPD28N03L Q67040-S4139-A2 P-T0252 P-T0251-3-1 Q67040-S4142-A2 SPU28N03L S35bG5 Q133777 SQT-89 kd smd transistor
1997 - Siemens DIODE E 1220

Abstract: No abstract text available
Text: SPD28N03L SIPMOS® Power Transistor Features Product Summary · N channel Drain source voltage VDS · Enhancement mode Drain-Source on-state resistance RDS(on) 0.018 · Avalanche rated Continuous drain current ID 30 V 30 A · Logic Level · dv/dt rated · 175°C operating temperature Type Package Ordering Code Packaging SPD28N03L P-TO252 Q67040-S4139-A2 Tape and Reel SPU28N03L Pin 1 Pin 2 Pin 3 P-TO251-3-1 Q67040-S4142-A2 Tube G D


Original
PDF SPD28N03L P-TO252 Q67040-S4139-A2 SPU28N03L P-TO251-3-1 Q67040-S4142-A2 Siemens DIODE E 1220
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