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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1160CN Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C
LT1160CN#PBF Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C
LT1336IS#TR Linear Technology LT1336 - Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C
LT1160CS#PBF Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: SO; Pins: 14; Temperature Range: 0°C to 70°C
LT1336CS#PBF Linear Technology LT1336 - Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LT1160CS#TR Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: SO; Pins: 14; Temperature Range: 0°C to 70°C

Power MOSFET 50V 20A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
4134 mosfet

Abstract:
Text: 30A, 50V , 0.040 Ohm, N-Channel Power MOSFET . 14A, 50V , 0.100 Ohm, N-Channel Power MOSFET . 13A, 50V , 0.120 Ohm, N-Channel Power MOSFET , . . 4-183 75A, 50V , 0.008 Ohm, N-Channel Power MOSFET , . 25A, 50V , 0.047 Ohm, N-Channel Power MOSFET


OCR Scan
PDF BUZ11 BUZ71 BUZ71A BUZ72A HRFZ44N HUF75307P3, HUF75307D3, HUF75307D3S HUF75309P3, HUF75309D3, 4134 mosfet Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs mosfet HRF3205 MOSFET 50V 100A Mosfet 100V 50A MOSFET 1000v 30a
2012 - 100v 20a fast recovery power diode

Abstract:
Text: Condition Integral reverse PN diode in The MOSFET IS=1A,VGS=0V VGS = 0V, IDS = 20A , dISD / dt = 100A/uS - -0.7 80 160 - Rev.0, Feb. 2012 LTP40N10 N-Channel 100V Power MOSFET IDS= 20A Rev.0, Feb. 2012 LTP40N10 N-Channel 100V Power MOSFET VGS=10V IDS= 20A VDS= 50V IDS= 20A , LTP40N10 N-Channel 100V Power MOSFET Features: · Avalanche energy specified · Diode is , Units °C/W Rev.0, Feb. 2012 LTP40N10 N-Channel 100V Power MOSFET Electrical Characteristics


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PDF LTP40N10 to175 100v 20a fast recovery power diode Power MOSFET 50V 20A 100v 20a mosfet MOSFET 40A 100V N_CHANNEL MOSFET 100V MOSFET
2012 - LTP120N06

Abstract:
Text: LTP120N06 N-Channel 60V Power MOSFET Features: · Avalanche energy specified · Diode is , LTP120N06 N-Channel 60V Power MOSFET Electrical Characteristics (TA =25Unless Otherwise Specified) Symbol , , IDS = 1A VGS=0V, VDS=30V, f=1MHz VGS=10V, IDS= 20A VDD= 50V , Drain-Source Breakdown Voltage Gate , . 2012 LTP120N06 N-Channel 60V Power MOSFET Typical Characteristics Power Capability 130 300 , LTP120N06 N-Channel 60V Power MOSFET Typical Characteristics (Cont.) Output Characteristics 100 90 80


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PDF LTP120N06 to150 LTP120N06
2012 - 100V, 200 A MOSFET

Abstract:
Text: 100A/uS Rev.0, Feb. 2012 LTD35N10 N-Channel 100V Power MOSFET IDS= 20A Rev.0, Feb. 2012 LTD35N10 N-Channel 100V Power MOSFET VGS=10V IDS= 20A VDS= 50V IDS= 20A Rev.0, Feb. 2012 LTD35N10 N-Channel 100V Power MOSFET Rev.0, Feb. 2012 LTD35N10 N-Channel 100V Power MOSFET Rev , LTD35N10 N-Channel 100V Power MOSFET Features: · Avalanche energy specified · Diode is , Units °C/W Rev.0, Feb. 2012 LTD35N10 N-Channel 100V Power MOSFET Electrical Characteristics


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PDF LTD35N10 to175 100V, 200 A MOSFET Power MOSFET 50V 20A N_CHANNEL MOSFET 100V MOSFET MOSFET 40A 100V
2011 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P10 Power MOSFET -50A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET using UTC’s advanced , Packing Tube 1 of 2 QW-R502-607.a UTT50P10 Preliminary Power MOSFET ABSOLUTE MAXIMUM , Diode Forward Voltage VSD duty cycle d≤2% TJ=25°C, IF=- 20A , VR=- 50V , Body Diode Reverse Recovery , =-10V, ID=- 20A * High Switching Speed ORDERING INFORMATION Ordering Number Lead Free Halogen Free


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PDF UTT50P10 -100V UTT50P10 -100V UTT50P10L-TA3-T UTT50P10G-TA3-T O-220 QW-R502-607
2012 - UTC 225

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT70P10 70A, 100V P-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC UTT70P10 is a P-channel power MOSFET using UTC's advanced technology to provide , 1 of 2 QW-R502-725.a UTT70P10 PARAMETER Gate-Source Voltage Preliminary Power MOSFET , , VGS=0V, Pulse test, Drain-Source Diode Forward Voltage VSD t300s, duty cycle d2% TJ=25°C, IF=- 20A , VR=- 50V , energy in the avalanche. FEATURES * RDS(ON)=0.03 @ VGS=-10V, ID=- 20A * High Switching Speed


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PDF UTT70P10 UTT70P10 O-220 UTT70P10L-TA3-T UTT70P10G-TA3-T QW-R502-725 UTC 225
2004 - OPTOCOUPLER 4-PIN

Abstract:
Text: 2.4uH, 20A PA1393.252 Pulse Eng. 28. M1 N-Channel MosFet , 150V, 29A, 0.054 DPAK , HV9608DB1 3.3V/ 20A DC/DC Converter for Telecom Systems Introduction The Supertex HV9608 PWM , (HV9608DB1) in an industry standard quarter-brick footprint that provides up to 66W of output power . The , adjustability Vout 80%-110% Minimum load Imin 0% Ripple 0A to 20A 1% or 33mV Line regulation 36V to 75V 0.1% Load regulation 1A to 20A 1% Input voltage 48V nominal 36V


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PDF HV9608DB1 V/20A HV9608 HV9608DB1) HV9608DB1 75VDC A091004 OPTOCOUPLER 4-PIN 1N4148 sod123 SMD7343 zener 8w SMD-7343 PWM DRIVE control 100V 20A pwm lm2904 1N4148 SOD323 1n4148 any
2004 - Not Available

Abstract:
Text: (starting Tch):Vcc= 50V ,I(AV)<= 20A 1000 FUJI POWER MOSFET Transient Thermal impedance Zth(ch-c)=f(t , 2SK3338-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET 11.6±0.2 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and , ) 400 FUJI POWER MOSFET Safe operating area ID=f(VDS):Single Pulse,Tc=25°C 10 300 2 t= 1µs


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PDF 2SK3338-01
2013 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD UT60T03 Power MOSFET 30V, 45A N-CHANNEL ENHANCEMENT MODE , Reel 1 of 5 QW-R502-183.C UT60T03 Power MOSFET PIN CONFIGURATION DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-183.C UT60T03 Power MOSFET , 3.4 1.24 6 UNIT °C/W °C/W 3 of 7 QW-R502-183.C UT60T03 Power MOSFET ELECTRICAL , ns 1.3 23.3 16 V V ns nC 4 of 7 QW-R502-183.C UT60T03 Power MOSFET TYPICAL


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PDF UT60T03 UT60T03 UT60T03L-TF3-T UT60T03G-TF3-T UT60T03L-TF3-R UT60T03G-TF3-R UT60T03L-TN3-R UT60T03G-TN3-R UT60T03L-TN3-T UT60T03G-TN3-T
2015 - Not Available

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD UT60T03 Power MOSFET 30V, 45A N-CHANNEL ENHANCEMENT MODE ï , ® Power MOSFET MARKING TO-220F / TO-252 / TO-262  DFN-8(5×6) PIN CONFIGURATION Source , QW-R502-183.D UT60T03  Power MOSFET ABSOLUTE MAXIMUM RATINGS(TJ =25°C, unless otherwise , 7 QW-R502-183.D UT60T03  Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless , ,RDS(ON) (mΩ) 10V 8.0V Drain Current,ID (A)  Power MOSFET UNISONIC TECHNOLOGIES CO


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PDF UT60T03 UT60T03 UT60T03L-TF3-T UT60T03G-TF3-T O-220F UT60T03L-TF3-R UT60T03G-TF3-R UT60T03L-TN3-R UT60T03G-TN3-R
2012 - Not Available

Abstract:
Text: UNISO TE NIC CHNO G SCO LTD LO IE ., UTT70P10 Preliminary Power MOSFET 7 0 A, 1 0 0 V P-CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC UTT70P10 is a P-channel power MOSFET using , QW-R502-725.a UTT70P10 ̈ Preliminary Power MOSFET ABSOLU T E M AX I M U M RAT I N GS (TC , =-10V, ID=- 20A * High Switching Speed ̈ SY M BOL 2.Drain 1.Gate 3.Source ̈ ORDERI N G , Continuous ID -70 A Drain Current Pulsed IDM -90 A Power Dissipation PD 225 W Junction


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PDF UTT70P10 UTT70P10 UTT70P10L-TA3-T UTT70P10G-TA3-T QW-R502-725
2010 - A2016

Abstract:
Text: Electronics, Inc. The NC20 series operates from a 12V nominal input, provides up to 20A of power in a vertical , / 20A out Figure 12: Output ripple & noise at 12Vin, 5.0V / 20A out DS_NC12S20A_12092010 4 , delay time at 12Vin, 5.0V / 20A out Ch2:Vin Ch3:Vout Ch4:PWRGD Figure 18: Turn on delay time at Remote On/Off, 5.0V / 20A out Ch2: ENABLE Ch3:Vout Ch4:PWRGD DS_NC12S20A_12092010 5 ELECTRICAL , FEATURES High Efficiency: 91% @ 12Vin, 5V/ 20A out Size: 30.5x27.9x11.4mm (1.20"×1.10"×0.45") -


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PDF 12Vin, V/20A x6220 NC12S20A A2016
2007 - NC20A

Abstract:
Text: Load DC/DC Power Modules: 12Vin, 0.9V-5.0Vout, 20A The Delphi NC20 Series, 12V input, single output , , provides up to 20A of power in a vertical or horizontal mounted through-hole package and the output can , / 20A out Figure 12: Output ripple & noise at 12Vin, 5.0V / 20A out DS_NC12S20A_02072007 4 , delay time at 12Vin, 5.0V / 20A out Ch2:Vin Ch3:Vout Ch4:PWRGD Figure 18: Turn on delay time at Remote On/Off, 5.0V / 20A out Ch2: ENABLE Ch3:Vout Ch4:PWRGD DS_NC12S20A_02072007 5 ELECTRICAL


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PDF 12Vin, V/20A EN60950) x6220 NC12S20A NC20A NC20 SR-332
1999 - mosfet 20a 300v

Abstract:
Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications , . Typ. Max. Units 0.368 50.0 °C/W °C/W 1 2SK3338-01 FUJI POWER MOSFET , POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Drain-Source On-state , 10 1 10 2 ID [A] 3 2SK3338-01 FUJI POWER MOSFET Transient Thermal impedance


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PDF 2SK3338-01 mosfet 20a 300v
1999 - Not Available

Abstract:
Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications , FUJI POWER MOSFET Characteristics Safe operating area ID=f(VDS):Single Pulse,Tc=25°C Allowable , [A] 2 2SK3338-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS , . starting Tch E(AV)=f(starting Tch):Vcc= 50V ,I(AV)<= 20A 0 1000 10 0.5 800 Zth(ch-c) [K/W


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PDF 2SK3338-01
2004 - L356

Abstract:
Text: (starting Tch):Vcc= 50V ,I(AV)<= 20A 1000 FUJI POWER MOSFET Transient Thermal impedance Zth(ch-c)=f(t , 2SK3338-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET 11.6±0.2 Applications , Power Dissipation PD=f(Tc) 400 FUJI POWER MOSFET Safe operating area ID=f(VDS):Single Pulse,Tc , ):ID=10A,VGS=10V 0.8 5.0 4.5 0.7 4.0 0.6 3.5 0.5 max. 0.4 FUJI POWER MOSFET Gate Threshold Voltage


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PDF 2SK3338-01 L356
2008 - Delta NC06

Abstract:
Text: Delphi NC20 Series Non-Isolated Point of Load DC/DC Power Modules: 12Vin, 0.9V-5.0Vout, 20A The Delphi , NC20 series operates from a 12V nominal input, provides up to 20A of power in a vertical or horizontal , at 12Vin, 3.3V/ 20A out Figure 12: Output ripple & noise at 12Vin, 5.0V / 20A out DS_NC12S20A , Figure 17: Turn on delay time at 12Vin, 5.0V / 20A out Ch2:Vin Ch3:Vout Ch4:PWRGD Figure 18: Turn on delay time at Remote On/Off, 5.0V / 20A out Ch2: ENABLE Ch3:Vout Ch4:PWRGD DS_NC12S20A_01102008 5


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PDF 12Vin, V/20A EN60950-1) 73/23/EEC 93/68/EEC x6220 NC12S20A Delta NC06 NC20
2004 - 2SK3338-01

Abstract:
Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High , . Units 0.368 50.0 °C/W °C/W 1 2SK3338-01 FUJI POWER MOSFET Characteristics Safe , 60 ID [A] 2 2SK3338-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch , 10 0 10 10 1 2 10 ID [A] 3 2SK3338-01 FUJI POWER MOSFET Transient , (starting Tch):Vcc= 50V ,I(AV)<= 20A 0 1000 10 0.5 800 Zth(ch-c) [K/W] -1 EAV [mJ] 600


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PDF 2SK3338-01 2SK3338-01 L356
2013 - Not Available

Abstract:
Text: HUF76629D3ST_F085 N-Channel Logic Level UltraFET® Power MOSFET 100V, 20A , 52mΩ D Features , 2.3 3 nC - VDD = 50V ID = 20A - VDS = 25V, VGS = 0V, f = 1MHz 3.5 - nC , 50V , ID = 20A , VGS = 10V, RGEN = 8.2Ω Drain-Source Diode Characteristics VSD Source to Drain , www.fairchildsemi.com HUF76629D3ST_F085 N-Channel Logic Level UltraFET ® Power MOSFET Typical Characteristics , www.fairchildsemi.com HUF76629D3ST_F085 N-Channel Logic Level UltraFET ® Power MOSFET Typical Characteristics


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PDF HUF76629D3ST
2008 - NT 407F

Abstract:
Text: ), gate supply requirements and thermal management requirements. The total power loss on MOSFET consists , gate charge for fast switching transition and low-side MOSFET with low rDS(ON). The budget power , . (EQ. 12) where ttr is the combined ON and OFF MOSFET transition times. The total power , = 1.8V, IOUT = 20A EN VOUT SS FIGURE 3. ISL8104EVAL2Z Power and Load Connections , ISL8104 is a simple single-phase PWM controller for a synchronous buck converter with integrated MOSFET


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PDF ISL8104 ISL8104EVAL2Z NT 407F SM0603 MOSFET TEST SIMPLE Procedures ISL8104EVAL1Z IHLP5050FD-R68 generic resistor DNP resistors BSC080N03LS BSC030N03LS
2002 - dale r025f

Abstract:
Text: , MIC4452 MOSFET drivers are used to provide the needed gate drive. 20A Circuit L1A 1.8µH 20A , -1R8MC Sumida 1.8µH, 20A inductor 1 Q1, Q2, Q3, Q4 SUD50N03-10P Siliconix MOSFET 4 49.9k , capable of delivering up to 15A without the need of external MOSFET drivers. At the same time, the MIC2182 is capable of transitioning to "skip" mode, if needed, to improve efficiency at lower power , high performance DSPs and CPUs. x x x x x x x x x x x Applications x DC power


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PDF MIC2182 MIC2182 015-F MIC2182BM MIC4452BM M-0283 dale r025f Dale R015F resistor WSL-2512-R015-F Dale R015F MIC4452BM B130 transistors r020f liteon inverter 16v 150uF tantalum capacitor lm4040cim3-1.2
1996 - mosfet 20a 300v

Abstract:
Text: POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc= 50V ,I(AV)<= 20A , FMC20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features , 400 FUJI POWER MOSFET Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID =f(VDS , ] 5 10 15 20 ID [A] 2 25 30 35 40 FMC20N50E 1.0 FUJI POWER MOSFET , POWER MOSFET WARNING 1. This Catalog contains the product specifications, characteristics, data


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PDF FMC20N50E mosfet 20a 300v
1996 - FMV20N50E

Abstract:
Text: FMV20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features , =7.4kV/µs, VccBVDSS, Tch150°C. 1 FMV20N50E FUJI POWER MOSFET Allowable Power Dissipation PD=f , 30 35 40 3 FMV20N50E 1.0 FUJI POWER MOSFET Drain-Source On-state Resistance , 10 VSD [V] -1 10 0 10 ID [A] 3 1 FMV20N50E FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc= 50V ,I(AV)<= 20A 10 10 700


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PDF FMV20N50E O-220F FMV20N50E
2015 - Not Available

Abstract:
Text: under power-sag conditions to prevent the external power MOSFET from overheating. A soft start feature , . Current Limit The MIC2164/-2/-3 uses the RDS(ON) of the low-side power MOSFET to sense over-current , resistance specified at 25°C. This change in resistance must be accounted for when calculating MOSFET power , Name 1 HSD High-Side N-MOSFET Drain Connection (input): Power to the drain of the external high-side N-channel MOSFET . The HSD operating voltage range is from 3V to 28V. Input capacitors between HSD


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PDF MIC2164/-2/-3/C MIC2164/-2/-3/C MIC2164 300kHz, MIC2164-2 600kHz, MIC2164-3
1996 - mosfet 20a 300v

Abstract:
Text: POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc= 50V ,I(AV)<= 20A , FMI20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features , 400 FUJI POWER MOSFET Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID =f(VDS , ] 5 10 15 20 ID [A] 2 25 30 35 40 FMI20N50E 1.0 FUJI POWER MOSFET , POWER MOSFET WARNING 1. This Catalog contains the product specifications, characteristics, data


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PDF FMI20N50E mosfet 20a 300v fmi20n50e
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