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POWEREST Texas Instruments Power Estimation Tool (PET)
MPS48-EP300 GE Critical Power MPS48 DC Power System
MPS48-3R<00 GE Critical Power MPS48 DC Power System
GCP841A_0I6R_USB_S Controller (150043558) GE Critical Power Global Power System Galaxy Pulsar Edge Controller
AXB050X43-SRZ GE Critical Power Austin Lynx 24V:Non-isolated Power Module
CCH75K3 GE Critical Power CCH Series, 75 Watt Swithing Power Supply

Power Diode 818 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - M1 Rectifier Diode

Abstract: diode B8
Text: SK 15 DGDL 065 ET power semiconductor power electronics igbt bridge rectifier diode thyristor , Values 566 89 8: =7 .7 >.6 @:6 AAA B8/6 Units 2 ( ( 2 0 ( ( 0 2 ( ( (E 0 0 0 2 Diode - Inverter , typ. . .1. : 81. 818 76 886 617 61. 61. :/ :6 =:6 96 61= 61. max. .1/ / 81. 8.6 Units 2 2 2 F * * * HD+ I I Typical Applications &, 819 Diode - Inverter, Chopper 2* - 23 2$ $ , =66 2 2'3 - 6 21 $? - 8./ 0 *D - .96 (DL 88 818 61.: 81: 81: 8 619 :/ /6 81J 818 56 .1= 2 2 F HD


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Not Available

Abstract: No abstract text available
Text: m an A M P com pany Monolithic PIN Diode Switches Features · Broadband Performance: Specified , and shunt connected PIN diode in each arm. The close spacing of these series/shunt diodes results in , 020 Monolithic PIN Diode Switches MA4SW100, 200, 300 V3.00 Electrical Specifications at 25°C MA4SW100 (SPST)1 Parameter Frequency 1-8 GHz Insertion Loss2 8-18 GHz 18-26 GHz 1-8 GHz Isolation2 8-18 GHz 18-26 GHz 1-8 GHz Input Return Loss2 8-18 GHz 18-26 GHz Signal Com pression @ 500 mW Switching


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PDF MA4SW100 MA4SW100-300 MA4SW100, MA4SW200 MA4SW300
1996 - MA4SW100

Abstract: 9620* diode MA4SW100-300
Text: Monolithic PIN Diode Switches Features q MA4SW100, 200, 300 V3.00 q q q Broadband , diode in each arm. The close spacing of these series/shunt diodes results in low loss and high isolation , PIN Diode Switches Electrical Specifications at 25°C MA4SW100 (SPST)1 Parameter Frequency 1-8 GHz 8-18 GHz 18-26 GHz 1-8 GHz 8-18 GHz 18-26 GHz 1-8 GHz 8-18 GHz 18-26 GHz 1 GHz - - Minimum - - - , Rating4 MA4SW200 (SPDT)1 Parameter Frequency 1-8 GHz 8-18 GHz 18-26 GHz 1-8 GHz 8-18 GHz 18-26 GHz 1-8


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PDF MA4SW100, MA4SW100-300 MA4SW200 MA4SW300 MA4SW100 9620* diode
2006 - diode B8

Abstract: No abstract text available
Text: SK 10 DGDL 065 ET power semiconductor power electronics igbt bridge rectifier diode thyristor , Values 566 89 88 <= . >.6 @=6 AAA B8/6 Units 2 ( ( 2 0 ( ( 0 2 ( ( (E 0 0 0 2 Diode - Inverter , . < typ. . .1< = 81. 818 8<< 87< 61/ 618 618 =/ <6 <=6 ./ 6187 618< max. .1/ / 81< .66 Units 2 2 2 F * * * HD+ I I Typical Applications &, . Diode - Inverter, Chopper 2* - 23 2$ $ , <66 2 2'3 - 6 21 $? - 8./ 0 *D - 896 (DL 71= 617 6187 81< 81. 8 61J =/ /6 81/ 818 56 .1< 2 2 F HD


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2006 - 81g diode

Abstract: No abstract text available
Text: SK 15 GD 065 ET power semiconductor power electronics igbt bridge rectifier diode thyristor cib , 819 819 8 61G 9/ /6 81J 818 56 .1A 2 2 E HC+ ( L I Diode rectifier 2* 2$ $ B=> B : : N &* - (1 , SEMIKRON SK 15 GD 065 ET power semiconductor power electronics igbt bridge rectifier diode thyristor , Values 566 .6 89 96 .7 <.6 >96 ? @8/6 Units 2 ( ( 2 0 ( ( 0 2 ( ( (D 0 Diode - Inverter , ' - 8./ E , $- ./01 min. A typ. . .1. 9 81. 818 76 886 617 61. 61. 9/ 96 A96


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2004 - LD162DZ_DS

Abstract: No abstract text available
Text: Euvis LD162DZ_G0 Datasheet Email: Sales@euvis.com Tel: ( 818 ) 879-7980 Sales Department Fax: ( 818 ) 879-9696 Document name: LD162DZ_DS_G0 Release date: 02/27/2004 Related document: LD162DZ_DS_5G4 @ 01/09/2004 Version: G0 Revision: (none) Euvis Laser Diode Driver, LD162DZ OC-192/STM-64/10GbE LD162DZ_G0 Differential Laser Diode Driver 32-Pin QFN package PRODUCT DESCRIPTION The LD162DZ is a low-power high-speed laser diode driver designed for fiber optic communication systems such as


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PDF LD162DZ LD162DZ OC-192/STM-64/10GbE 32-Pin OC-192, STM-64 LD162DZ_DS
PIN DIODE SPDT DRIVER CIRCUITS

Abstract: No abstract text available
Text: Aìfaf SPST, SPDT & SP3T Monolithic PIN Diode Switches flic j ll. MA4SW100 MA4SW200 , series and shunt connected PIN diode in each arm. The close spacing of these series/shunt diodes results , South Ave, Burlington, MA 01803 800-366-2266 81 Monolithic PIN Diode Switches Electrical Specifications at 25 °C MA4SW100 (SPST)1 PARAMETERS Insertion Loss2 FREQUENCY 1-8 GHz 8-18 GHz 18-26 GHz 1-8 GHz 8-18 GHz 18-26 GHz 1-8 GHz 8-18 GHz 18-26 GHz 1 GHz MIN. - - NOMINAL 0.6 1.0 1.5 45 40 35 15


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PDF MA4SW100 MA4SW200 MA4SW300 MA4SW100-300 ODS-1053 ODS-1052 ODS-1051 PIN DIODE SPDT DRIVER CIRCUITS
Nippon Aleph

Abstract: p 818 opto Aleph International Aleph Aleph International Corporation 175489-3 amp reflective Opto-Sensor Opto-Sensor range long sensor reflective OM-371-A8
Text: Current Derating *1 Collector Current Collector Power Dissipation Collector Power Dissipation , Corporation Tel: (800) 423-5622 Fax: ( 818 ) 365-7274 http://www.aleph-usa.com info@aleph-usa.com , CORPORATION A Member of Nippon Aleph Corporation Tel: (800) 423-5622 Fax: ( 818 ) 365-7274 http , Connector 1 175489-3 AMP (Natural) 5 Light Emitting Diode 1 - GaAs Infrared Light Emitting Diode 6 Detector 1 - Phototransistor ALEPH INTERNATIONAL CORPORATION A Member


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PDF OM-371-A8 600mA 294m/S2 Nippon Aleph p 818 opto Aleph International Aleph Aleph International Corporation 175489-3 amp reflective Opto-Sensor Opto-Sensor range long sensor reflective OM-371-A8
TO-217

Abstract: No abstract text available
Text: 2N6093 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2N6093 is a High Gain Linear RF Power , Temperature Sensing Diode . YLE TO-217 VMBOL A Bl b2 b3 INCHES M IN . 0.2D5 0-135 0.235 0.055 0,020 , to +2OO 0C -6S 0C to +2OO 0C 1.SO 0C/W W Pd is s Tj Ts t g qje 1 = Emitter & Diode Cathode 2 = Collector 3 = Base 4 = Diode Anode CHARACTERISTICS SYMBOL BVc e o BVc e s Ic e s BVe b o h FE , AVENUE · NORTH HOLLYWOOD, CA 91605 · ( 818 ) 982-1202 · TELEX: 18-2651 · FAX ( 818 ) 765-3004 1/2 hf e Im


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PDF 2N6093 O-217 TO-217
2003 - ua80

Abstract: S-818A30AMC-BGK-T2 S-818A28AUC-BGI-T2 S-818A28AMC-BGI-T2 S-818A25AUC-BGF-T2 S-818A25AMC-BGF-T2 S-818A20AUC-BGA-T2 S-818A20AMC-BGA-T2 S-818 Voltage Regulator SOT-23-5
Text: Rev.1.3_10 LOW DROPOUT CMOS VOLTAGE REGULATOR S- 818 Series The S- 818 Series is a positive , shutdown circuit Small package: SOT-23-5, SOT-89-5 *1. Attention should be paid to the power dissipation of the package when the output current is large. Applications · Power source for , Instruments Inc. 1 LOW DROPOUT CMOS VOLTAGE REGULATOR S- 818 Series Rev.1.3_10 Block Diagram *1 VIN ON/OFF VOUT + - ON/OFF circuit Reference voltage VSS *1. Parasitic diode


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PDF S-818 OT-23-5 OT-89-5 ua80 S-818A30AMC-BGK-T2 S-818A28AUC-BGI-T2 S-818A28AMC-BGI-T2 S-818A25AUC-BGF-T2 S-818A25AMC-BGF-T2 S-818A20AUC-BGA-T2 S-818A20AMC-BGA-T2 Voltage Regulator SOT-23-5
2001 - ic 818 a 8pin

Abstract: No abstract text available
Text: . California 91605 · Phone ( 818 ) 765-8300 · Toll Free (800) 827-7422 · Fax ( 818 ) 765-2387 E7 Capacitor , Temperature Coefficient TCR Tracking Operating Voltage Operating Temperature Power Rating 10 - 1 Meg ± 2%, ±1% (±0.5% is available upon request) ± 100ppm/°C ± 50ppm/°C 50V Max. -55°C + 125°C Power per resistor , , North Hollywood. California 91605 · Phone ( 818 ) 765-8300 · Toll Free (800) 827-7422 · Fax ( 818 ) 765-2387 E8 Diode Networks Dimension: mm Pin One Indicated L T 5 Pin 6 Pin 7 Pin 8SD7-CA H 8 Pin 9 Pin


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PDF 100ppm/ 200ppm/ 10pF-0 ic 818 a 8pin
Not Available

Abstract: No abstract text available
Text: m 2N6093 \ \ NPN SILICON RF POWER TRANSISTOR PACKAGE S YLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode . SYM BOL M IL L IM E T E R S IN , Tc = 75 °C -65 °C to +200 °C Tj 2 .2 8 1 = Emitter & Diode Cathode 2 = Collector T stg -65 °C to +200 °C 3 = Base 4 = Diode Anode 1.50 °C/W 0JC CHARACTERISTICS


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PDF 2N6093 O-217 2N6093
Not Available

Abstract: No abstract text available
Text: diode Figure 7 Typical Circuit Block Diagram 2. Output transistor The S- 818 Series uses a low , parasitic diode . 3. Power Off Pin (ON/OFF Pin) This pin activates and inactivates the regulator. When the ON , DROPOUT CMOS VOLTAGE REGULATOR S- 818 Series (2) Power on/off control V IN =10V ON/OFF=010V IOUT , REGULATOR S- 818 Series (3) Power fluctuation V IN =410V IOUT=30mA 10V Rev.1.2 V IN =104V IOUT , .20 Rev.1.2 LOW DROPOUT CMOS VOLTAGE REGULATOR S- 818 Series The S- 818 Series is a positive


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2000 - S-818

Abstract: REGULATOR s818 S-818A30AMC-BGK-T2 S-818A28AUC-BGI-T2 S-818A28AMC-BGI-T2 S-818A25AUC-BGF-T2 S-818A25AMC-BGF-T2 S-818A20AUC-BGA-T2 S-818A20AMC-BGA-T2 sot-23-5 bgu
Text: Rs *1 Parasitic diode Figure 7 Typical Circuit Block Diagram 2. Output transistor The S- 818 , pin to VIN pin through the parasitic diode . 3. Power Off Pin (ON/OFF Pin) This pin activates and , REGULATOR S- 818 Series Rev.1.2 (3) Power fluctuation V IN =104V IOUT=30mA V IN =410V IOUT , Rev.1.2 LOW DROPOUT CMOS VOLTAGE REGULATOR S- 818 Series The S- 818 Series is a positive , , respectively. Applications Features O Power source for O Low current consumption During


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PDF S-818 OT-23-5 OT-89-5 REGULATOR s818 S-818A30AMC-BGK-T2 S-818A28AUC-BGI-T2 S-818A28AMC-BGI-T2 S-818A25AUC-BGF-T2 S-818A25AMC-BGF-T2 S-818A20AUC-BGA-T2 S-818A20AMC-BGA-T2 sot-23-5 bgu
VF-45

Abstract: EM012-V3EA VF-45TM fiber 100base TM-1310
Text: · · · · · 1310nm Light Emitting Diode Technology Compliant with specifications for IEEE , Power Supply Wave Solderable / Aqueous Washable Eye Safety The EM012-V3 1310-nm LED-based , ) z (Coupling ) A = AC 26679 W. Agoura Road Calabasas, CA 91302 ( 818 ) 466-2800 ( 818 ) 878-9163 , 26679 W. Agoura Road Calabasas, CA 91302 ( 818 ) 466-2800 ( 818 ) 878-9163 FAX www. e2oinc.com 10-90 , TRANSMITTER Output Optical Power 50/125 µm, NA = 0.20 fiber Output Optical Power 62.5/125 µm, NA = 0.275


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PDF VF-45 100Base-FX EM012-V3EA 1310-nm EM012-V3 EN55022 EM012-V3EA VF-45TM fiber 100base TM-1310
2012 - Not Available

Abstract: No abstract text available
Text: D S Packing Tube 1 of 3 QW-R502- 818 .a UF50N20 Preliminary Power MOSFET ABSOLUTE , A A V 2 of 3 QW-R502- 818 .a UF50N20 Preliminary Power MOSFET UTC assumes no , UNISONIC TECHNOLOGIES CO., LTD UF50N20 Preliminary Power MOSFET 50A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF50N20 is an N-channel power MOSFET using UTC’s advanced , Avalanche Current IAR 60 A Avalanche Energy EAS 600 mJ Power Dissipation PD 125 W Junction


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PDF UF50N20 UF50N20 130nC) UF50N20L-T47-T UF50N20G-T47-T QW-R502-818
VF-45

Abstract: EM012-V3PA VF-45TM 100-Base-FX
Text: · · · · · 1310nm Light Emitting Diode Technology Compliant with specifications for IEEE , Power Supply Wave Solderable / Aqueous Washable Immunity The EM012-V3 transceiver has been designed , . Agoura Road Calabasas, CA 91302 ( 818 ) 466-2800 ( 818 ) 878-9163 FAX www. e2oinc.com Page 1 09/15 , Calabasas, CA 91302 ( 818 ) 466-2800 ( 818 ) 878-9163 FAX www. e2oinc.com 20-80% V Page 2 09/15 , Optical Power 50/125 µm, NA = 0.20 fiber Output Optical Power 62.5/125 µm, NA = 0.275 fiber POUT


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PDF VF-45 100Base-FX EM012-V3PA 1310-nm EM012V3 EN55022 EM012-V3PA VF-45TM 100-Base-FX
1287I

Abstract: No abstract text available
Text: Phone: (800) 554-1224, ( 818 ) 889-8412, Fax: ( 818 ) 889-8417, E-mail: info@bjwe.com Input voltage up to , 42 - 80 58-144 Rated power Po tot [W] 39.6 51 56.1 61.2 72 96 108 90 120 135 144 , ) 554-1224, ( 818 ) 889-8412, Fax: ( 818 ) 889-8417, E-mail: info@bjwe.com Input Input voltage No load input , fuse with option C installed) typ. 80% Vi min suppressor diode no-load, overload and short circuit proof suppressor diode typ. 150% Vo nom Safety Approvals Protection degree Electric strength


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2004 - S-818A31AUC-BGLT2

Abstract: No abstract text available
Text: voltage circuit RS VSS *1. Parasitic diode Figure 11 Block diagram 2. Output Transistor The S- 818 , parasitic diode to VIN pin. Seiko Instruments Inc. 11 LOW DROPOUT CMOS VOLTAGE REGULATOR S- 818 , Rev.1.4_00 LOW DROPOUT CMOS VOLTAGE REGULATOR S- 818 Series The S- 818 Series is a positive , -23-5, SOT-89-5 *1. Attention should be paid to the power dissipation of the package when the output current is large. Applications · Power source for battery-powered devices, personal communication


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PDF S-818 OT-23-5 OT-89-5 S-818A31AUC-BGLT2
AP1280

Abstract: 2 Wavelength Laser Diode photodiode ge 2451B
Text: automatic power control circuit is recommended to protect the laser diode and stabilize the optical output , Module Family Laser Diode Module Preliminary Features □ Two Packaging Options: . (1) FCRecéptacle , laser diode and InGaAs PIN monitor photod|ode.;: The internal TO-module' is hermetically sealed , couples the laser diode to a single mode fiber to provide precise positioning and stable alignment over , devices for low and medium power applications. (Coupled output powers of 200 /im and 500 pm into a single


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PDF 24Slbm PLD-1300R PLD-1300R 913J1-6289 AP1280 2 Wavelength Laser Diode photodiode ge 2451B
2007 - UA80

Abstract: S818A50AMC-BHE-T2G S-818 S-818A20AMC-BGAT2G S-818A21AMC-BGBT2G s-818a30amc-bgkt2g S-818A45AUC s-818a50auc-bhet2g S-818A25AMC-BGFT2G
Text: Rf RS VSS *1. Parasitic diode Figure 12 Block diagram 2. Output Transistor The S- 818 , parasitic diode to VIN pin. 12 Seiko Instruments Inc. LOW DROPOUT CMOS VOLTAGE REGULATOR S- 818 , Rev.2.1_00 LOW DROPOUT CMOS VOLTAGE REGULATOR S- 818 Series The S- 818 Series is a positive , be paid to the power dissipation of the package when the output current is large. Applications · Power source for battery-powered devices, personal communication devices and home electric/electronic


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PDF S-818 OT-23-5 OT-89-5 UA80 S818A50AMC-BHE-T2G S-818A20AMC-BGAT2G S-818A21AMC-BGBT2G s-818a30amc-bgkt2g S-818A45AUC s-818a50auc-bhet2g S-818A25AMC-BGFT2G
2000 - Not Available

Abstract: No abstract text available
Text: . Parasitic diode Figure 12 Block diagram 2. Output Transistor The S- 818 Series uses a Pch MOS FET as the , 100 Seiko Instruments Inc. 21 LOW DROPOUT CMOS VOLTAGE REGULATOR S- 818 Series 3. Power , S- 818 Series www.sii-ic.com © Seiko Instruments Inc., 2000-2010 LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 The S- 818 Series is a positive voltage regulator developed by CMOS technology and , the power dissipation of the package when the output current is large. *2. Refer to " Product Name


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PDF S-818 OT-23-5 OT-89-5
2006 - Not Available

Abstract: No abstract text available
Text: SK 10 GD 065 ET power semiconductor power electronics igbt bridge rectifier diode thyristor cib , < 81. 8 61J =/ /6 81/ 818 56 .1< 2 2 F HD+ ( L I Diode rectifier 2* 2$ $ C?@ C : : N &* - (1 $? - , SEMIKRON SK 10 GD 065 ET power semiconductor power electronics igbt bridge rectifier diode thyristor , Values 566 89 88 <= . >.6 @=6 AAA B8/6 Units 2 ( ( 2 0 ( ( 0 2 ( ( (E 0 Diode - Inverter , ' - .86 F , $- ./01 min. < typ. . .1. = 81. 818 8<< 87< 61/ 618 618 =/ <6 <=6


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2006 - Semikron SK

Abstract: No abstract text available
Text: SK 20 DGD 065 ET power semiconductor power electronics igbt bridge rectifier diode thyristor cib , SEMIKRON SK 20 DGD 065 ET power semiconductor power electronics igbt bridge rectifier diode , Values 566 .5 87 /. ;5 <.6 >?6 @@@ A8/6 Units 2 ( ( 2 0 ( ( 0 2 ( ( (E 0 0 0 2 Diode - Inverter , . . .1. ? 81. 818 ?6 // 81. > > .8 .7 8D6 .6 6155 61? max. .1/ / 81; 56 Units 2 2 2 F * * * HC+ I I 2 2 F Typical Applications &, 81D Diode - Inverter, Chopper 2* - 23 2$ $ B=> &BB9 K


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2000 - S-818

Abstract: S-818A30AUC
Text: S- 818 Series Rev.3.0_00 3. Power fluctuation VIN =104V IOUT=30mA VIN =410V IOUT=30mA 10V , S- 818 Series www.sii-ic.com LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.3.0_00 © Seiko Instruments Inc., 2000-2010 The S- 818 Series is a positive voltage regulator developed by CMOS technology , %, halogen-free*2 *1. Attention should be paid to the power dissipation of the package when the output current is large. *2. Refer to " Product Name Structure" for details. Applications · Power source for


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PDF S-818 OT-23-5 OT-89-5 S-818A30AUC
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