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  You can filter table by choosing multiple options from dropdownShowing 39 results of 40
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
PZT2907AT1 ON Semiconductor Bristol Electronics 12,045 - -
PZT2907AT1 Motorola Semiconductor Products Bristol Electronics 7,196 - -
PZT2907AT1 ON Semiconductor Rochester Electronics 8,289 $0.33 $0.27
PZT2907AT1 ON Semiconductor Bristol Electronics 1,773 $0.19 $0.06
PZT2907AT1 Motorola Semiconductor Products Bristol Electronics 5,570 $0.19 $0.04
PZT2907AT1 Rochester Electronics - - -
PZT2907AT1 ON Semiconductor Bristol Electronics 1,030 - -
PZT2907AT1 ON Semiconductor ComS.I.T. 2,000 - -
PZT2907AT1 Motorola Semiconductor Products Chip One Exchange 17,822 - -
PZT2907AT1 ON Semiconductor Chip One Exchange 9,000 - -
PZT2907AT1 ON Semiconductor Chip1Stop 7,000 $0.57 $0.40
PZT2907AT1G ON Semiconductor Future Electronics - $0.11 $0.10
PZT2907AT1G ON Semiconductor Avnet 567,000 €0.09 €0.07
PZT2907AT1G Rochester Electronics - - -
PZT2907AT1G ON Semiconductor Avnet - $0.10 $0.10
PZT2907AT1G ON Semiconductor America II Electronics 6,000 - -
PZT2907AT1G ON Semiconductor Avnet - $0.12 $0.10
PZT2907AT1G ON Semiconductor Farnell element14 - £0.43 £0.13
PZT2907AT1G ON Semiconductor element14 Asia-Pacific - $0.49 $0.15
PZT2907AT1G ON Semiconductor Avnet 121,000 $0.14 $0.11
PZT2907AT1G ON Semiconductor element14 Asia-Pacific - $0.49 $0.15
PZT2907AT1G ON Semiconductor Bristol Electronics 334 - -
PZT2907AT1G ON Semiconductor Bristol Electronics 1,000 - -
PZT2907AT1G ON Semiconductor RS Components 350 £0.25 £0.10
PZT2907AT1G ON Semiconductor RS Components 8,400 £0.15 £0.10
PZT2907AT1G ON Semiconductor Newark element14 2,000 $0.10 $0.08
PZT2907AT1G ON Semiconductor element14 Asia-Pacific - $0.14 $0.14
PZT2907AT1G ON Semiconductor Allied Electronics & Automation - $0.08 $0.08
PZT2907AT1G ON Semiconductor Future Electronics - $0.23 $0.13
PZT2907AT1G ON Semiconductor Chip1Stop 1 $0.09 $0.09
PZT2907AT1G ON Semiconductor Chip1Stop 1 $0.15 $0.15
PZT2907AT1G. ON Semiconductor Newark element14 118,000 $0.10 $0.10
SPZT2907AT1G ON Semiconductor Chip1Stop 2,645 $0.20 $0.20
SPZT2907AT1G ON Semiconductor Chip1Stop 2,645 $0.27 $0.14
SPZT2907AT1G ON Semiconductor element14 Asia-Pacific 675 $0.70 $0.28
SPZT2907AT1G ON Semiconductor Newark element14 675 $0.41 $0.17
SPZT2907AT1G ON Semiconductor Avnet - €0.17 €0.09
SPZT2907AT1G ON Semiconductor Avnet - $0.09 $0.09
SPZT2907AT1G ON Semiconductor Farnell element14 675 £0.33 £0.16

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PZT2907AT1 datasheet (9)

Part Manufacturer Description Type PDF
PZT2907AT1 Motorola SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT Original PDF
PZT2907AT1 On Semiconductor PNP Silicon Epitaxial Transistor Original PDF
PZT2907AT1 On Semiconductor Small Signal Switch PNP; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 Original PDF
PZT2907AT1 Philips Semiconductors TRANS GP BJT PNP 60V 0.6A 4SOT-223 T/R Original PDF
PZT2907AT1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar, NPN, Switching, 60V (BR), 200mA, Pkg Style SOT223 Scan PDF
PZT2907AT1/D On Semiconductor SOT-223 PACKAGE PNP SILICON TRANSISTOR Original PDF
PZT2907AT1-D On Semiconductor PNP Silicon Epitaxial Transistor Original PDF
PZT2907AT1G On Semiconductor Small Signal Switch PNP Original PDF
PZT2907AT1G On Semiconductor Small Signal Switch PNP; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 Original PDF

PZT2907AT1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - MARKING P2F

Abstract: 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3 p2f sot-223
Text: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred , possibility of damage to the die. BASE 1 · Available in 12 mm tape and reel Use PZT2907AT1 to order the 7 , Publication Order Number: PZT2907AT1 /D PZT2907AT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , Test Circuit http://onsemi.com 2 PZT2907AT1 1000 hFE, CURRENT GAIN TJ = 125°C TJ = 25 , PZT2907AT1 INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE POWER DISSIPATION the equation for an


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PDF PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1 inch/1000 r14525 PZT2907AT1/D MARKING P2F 1N916 PZT2222AT1 PZT2907AT3 p2f sot-223
2006 - p2f sot-223

Abstract: PZT2907AT1G transistor P2F on semiconductor p2f p2F 45 MARKING P2F PZT2907AT1G data DATASHEET OF IC 713 1N916 PZT2222AT1
Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial , : Microdot may be in either location) ORDERING INFORMATION Shipping PZT2907AT1 SOT-223 1000 / Tape & Reel PZT2907AT1G Stresses exceeding Maximum Ratings may damage the device. Maximum , Components Industries, LLC, 2006 March, 2006 - Rev. 8 1 Publication Order Number: PZT2907AT1 /D PZT2907AT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min


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PDF PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1/D p2f sot-223 PZT2907AT1G transistor P2F on semiconductor p2f p2F 45 MARKING P2F PZT2907AT1G data DATASHEET OF IC 713 1N916 PZT2222AT1
2004 - transistor P2F

Abstract: ON MARKING P2F p2f transistor PZT2907AT1G PZT2907AT3 on semiconductor p2f
Text: +150 °C Sec °C ORDERING INFORMATION Device PZT2907AT1 PZT2907AT1G PZT2907AT3 Package SOT-223 SOT , PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT , Order Number: PZT2907AT1 /D PZT2907AT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ://onsemi.com 1602 PZT2907AT1 -30 V INPUT Zo = 50 PRF = 150 Hz RISE TIME 2.0 ns 0 -16 V 200 ns 50 INPUT


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PDF PZT2907AT1 OT-223 PZT2222AT1 transistor P2F ON MARKING P2F p2f transistor PZT2907AT1G PZT2907AT3 on semiconductor p2f
1996 - MARKING P2F

Abstract: PZT2907AT3 1N916 PZT2222AT1 PZT2907AT1 motorola P2F
Text: MOTOROLA Order this document by PZT2907AT1 /D SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is , eliminating the possibility of damage to the die. · Available in 12 mm tape and reel Use PZT2907AT1 to , Device Data 1 PZT2907AT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued , Transistors, FETs and Diodes Device Data PZT2907AT1 1000 hFE, CURRENT GAIN TJ = 125°C TJ = 25


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PDF PZT2907AT1/D PZT2907AT1 OT-223 PZT2222AT1 PZT2907AT1/D* MARKING P2F PZT2907AT3 1N916 PZT2222AT1 PZT2907AT1 motorola P2F
2001 - transistor marking p2f

Abstract: MARKING p2F p2f marking
Text: tape and reel Use PZT2907AT1 to order the 7 inch/1000 unit reel. Use PZT2907AT3 to order the 13 inch , 25°C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg PZT2907AT1 ON , Components Industries, LLC, 2001 1 November, 2001 ­ Rev. 6 Publication Order Number: PZT2907AT1 /D PZT2907AT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol , Circuit http://onsemi.com 2 PZT2907AT1 TYPICAL ELECTRICAL CHARACTERISTICS TJ = 125°C hFE


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PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 r14525 PZT2907AT1/D transistor marking p2f MARKING p2F p2f marking
2011 - sot-223 body marking D K Q F

Abstract: transistor P2F on semiconductor p2f SPZT2907AT1G p2F 45 sot-223 body marking A G
Text: PZT2907AT1 PZT2907AT1G SPZT2907AT1G PZT2907AT3 PZT2907AT3G 260 10 - 65 to +150 C Sec C TJ, Tstg , PZT2907AT1 , SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon , , 2011 - Rev. 9 1 Publication Order Number: PZT2907AT1 /D PZT2907AT1 , SPZT2907AT1G ELECTRICAL , Test: Pulse Width 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 PZT2907AT1 , SPZT2907AT1G -30 , http://onsemi.com 3 PZT2907AT1 , SPZT2907AT1G PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04


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PDF PZT2907AT1, SPZT2907AT1G OT-223 PZT2222AT1 AEC-Q101 PZT2907AT1/D sot-223 body marking D K Q F transistor P2F on semiconductor p2f SPZT2907AT1G p2F 45 sot-223 body marking A G
2004 - p2f sot-223

Abstract: PZT2907AT1G MARKING P2F on semiconductor p2f transistor P2F p2f sot PZT2907AT3 PZT2907AT1 PZT2222AT1 1N916
Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial , Device Code A = Assembly Location WW = Work Week ORDERING INFORMATION Shipping PZT2907AT1 , & Reel PZT2907AT1G SOT-223 (Pb-Free) 1000 / Tape & Reel PZT2907AT3 SOT-223 4000 , Components Industries, LLC, 2004 July, 2004 - Rev. 7 1 Publication Order Number: PZT2907AT1 /D PZT2907AT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max -60


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PDF PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1/D p2f sot-223 PZT2907AT1G MARKING P2F on semiconductor p2f transistor P2F p2f sot PZT2907AT3 PZT2907AT1 PZT2222AT1 1N916
Not Available

Abstract: No abstract text available
Text: PZT2907AT1 , SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon , ) ORDERING INFORMATION Package Shipping†PZT2907AT1 SOT−223 1,000 / Tape & Reel PZT2907AT1G SOT−223 (Pb−Free) 1,000 / Tape & Reel SPZT2907AT1G SOT−223 (Pb−Free) 1 , future use and best overall value. Publication Order Number: PZT2907AT1 /D PZT2907AT1 , ns PZT2907AT1 , SPZT2907AT1G - 30 V INPUT Zo = 50 W PRF = 150 Hz RISE TIME  2.0 ns +15


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PDF PZT2907AT1, SPZT2907AT1G OT-223 PZT2222AT1 OT-223 PZT2907AT1/D
sot-223 body marking D K Q F

Abstract: sot223 p2f
Text: MOTOROLA Order this data sheet by PZT2907AT1 /D SEMICONDUCTOR TECHNICAL DATA PNP Silicon , ssibility o f da m ag e to the die. COLLECTOR 2,4 PZT2907AT1 Motorola Preferred Device SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT · Available in 12 mm tape and reel Use PZT2907AT1 to order , Rise Time Test C ircuit Figure 2. Storage and Fall Time Test C ircuit MOTOROLA 2 PZT2907AT1 , " Voltage Figure 6. Capacitances PZT2907AT1 MOTOROLA 3 INFORMATION FOR USING THE SOT


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PDF PZT2907AT1/D OT-223 PZT2222AT1 PZT2907AT1 2PHX25151F-3 sot-223 body marking D K Q F sot223 p2f
transistor P2F

Abstract: ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2907AT3 PZT2222AT1 1p2f MARKING P2F
Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial , be in either location) ORDERING INFORMATION Shipping PZT2907AT1 SOT-223 1000 / Tape & Reel PZT2907AT1G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are , recommended choices for future use and best overall value. 1 PZT2907AT1 ELECTRICAL CHARACTERISTICS , : Pulse Width 300 ms, Duty Cycle 2.0%. 2 ns ns PZT2907AT1 PACKAGE DIMENSIONS SOT-223 (TO


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PDF PZT2907AT1 OT-223 PZT2222AT1 OT-223 transistor P2F ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2907AT3 PZT2222AT1 1p2f MARKING P2F
2001 - MARKING P2F

Abstract: No abstract text available
Text: tape and reel Use PZT2907AT1 to order the 7 inch/1000 unit reel. Use PZT2907AT3 to order the 13 inch , °C(1) Symbol VCEO VCBO VEBO IC PD TJ, Tstg PZT2907AT1 ON Semiconductor Preferred Device SOT , Components Industries, LLC, 2001 1061 March, 2001 ­ Rev. 5 Publication Order Number: PZT2907AT1 /D PZT2907AT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol , Circuit http://onsemi.com 1062 PZT2907AT1 TYPICAL ELECTRICAL CHARACTERISTICS TJ = 125°C hFE


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PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 MARKING P2F
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E pitaxial Transistor PZT2907AT1 M otorola Preferred Device T h is PNP S ilico n E pitaxial tra n s is to r is d e sig ned fo r use in lin , and reel Use PZT2907AT1 to order the 7 Inch/1000 unit reel. Use PZT2907AT3 to order the 13 inch/4000 , Transistors, FETs and Diodes Device Data -2-805 PZT2907AT1 ELECTRICAL , Motorola Small-Signal Transistors, FETs and Diodes Device Data PZT2907AT1 hFE, CURRENT GAIN


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PDF PZT2907AT1 OT-223 PZT2222AT1 b3ti75SS J357b
MARKING P2F

Abstract: transistor P2F PZT2907AT3 motorola P2F
Text: COLLECTOR PZT2907AT1 M otorola P referred Devios SOT-223 PACKAGE PNP SILIC ON TR A NSISTO R SURFACE M OU N T · Available in 12 mm tape and reel Use PZT2907AT1 to order the 7 inch/1000 unit reel , and Diodes Device Data PZT2907AT1 ELEC TR IC A L C HA R A C TER ISTIC S - continued (Ta = 25


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PDF OT-223 PZT2222AT1 PZT2907AT1 MARKING P2F transistor P2F PZT2907AT3 motorola P2F
ZT2907A

Abstract: PZT2907AT3 ON MARKING P2F
Text: LLEC TO R · Available in 12 mm tape and reel 24 Use PZT2907AT1 to order the 7 inch/1000 unit reel. Use PZT2907AT3 to order the 13 inch/4000 unit reel. PZT2907AT1 Motorola Preferred Device SOT-223 PACKAGE , and Diodes Device Data 2-805 PZT2907AT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise


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PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 ZT2907A ON MARKING P2F
Not Available

Abstract: No abstract text available
Text: PZT2907AT1 * M A X IM U M R A T IN G S Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation, T ^ = 25 `C* Storage Temperature Range Junction Temperature T H E R M A L C H A R A C T E R IS T IC S Thermal Resistance from Junction to Arfibient in Free Air* D E V IC E M A R K IN G P2F *This is a Motorola designated preferred device. E L E C T R IC A L C , AND DIODES PZT2907AT1 E L E C T R IC A L C H A R A C T E R IS T IC S - c o n tin u e d i T j -


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PDF PZT2907AT1*
P2T2907

Abstract: PM2907A P2907 PM2907 PZT2907AT3 11111111M PZT2907AT1 30i sot223 P2907A PZT2222AT1
Text: PZT2907AT1 to order the 7 inc~l 000 unit reel. Use PZT2907AT3 to order the 13 inch/4000 unit reel. BASE , and Diodes Device Data PZT2907AT1 TYPICALELECTRICAL CHARACTERISTICS 1000 t iiiit u , - Motorola Small+gnal Transistors, FHs and Diodes Device Data 3 PZT2907AT1


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PDF 2907ATllD P2T2907ATI OT-223 PZT2222AT1 PZT2907AT1 MK145BP, 2PHX25151F-5 2907ATIID P2T2907 PM2907A P2907 PM2907 PZT2907AT3 11111111M 30i sot223 P2907A PZT2222AT1
Not Available

Abstract: No abstract text available
Text: PZT2907AT1 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.6 @I(C) (A) (Test Condition)500m @I(B) (A) (Test Condition)50m h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 @I(C) (A) (Test Condition)150m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq200M @I(C) (A) (Test Condition)50m @V(CE


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PDF PZT2907AT1 Freq200M
2013 - Not Available

Abstract: No abstract text available
Text: : Microdot may be in either location) ORDERING INFORMATION Device PZT2907AT1G SPZT2907AT1G PZT2907AT3G , Publication Order Number: PZT2907AT1 /D PZT2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , ://onsemi.com 4 PZT2907AT1 /D ON Semiconductor


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PDF PZT2907A OT-223 PZT2222AT1 AEC-Q101 PZT2907AT1/D
motorola p1f

Abstract: P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" NPN marking BH ah sot223 BS3 MARKING AS3 MARKING
Text: PZT2907AT1 P2F 45 100 60 100 300 50 200 Plastic-Encapsulated Darlingtons Pinout: 1-Base, 2-Collector, 3


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PDF OT-223 318E-04 BCP56T1 BCP53T1 PZT2222AT1 PZT2907AT1 BSP52T1 PZTA14T1 motorola p1f P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" NPN marking BH ah sot223 BS3 MARKING AS3 MARKING
2004 - BC327 SOT 23

Abstract: PZT2222AT1 BC639 sot
Text: - - - MMBT4403LT1 - - BCX18LT1 BCP53T1 BCP53-10T1 BCP53-16T1 PZT2907AT1 PZT751T1 - BCP69T1 - V(BR


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PDF BC489 BC639 BC489A BC489B BC639-16 BC447 MPS8099 MPSA06 MPS651 BC637 BC327 SOT 23 PZT2222AT1 BC639 sot
Transistor p1f

Abstract: SOT-223 P1f MARKING P1F motorola p1f on semiconductor p1f PZT2222AT1 P1F transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar E pitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear ancI switching applications. The device is housed in the SOT-223 package which is de^signed for medium power surface mount applications. · · PIMP Complement is PZT2907AT1 SOT-223 package ensures level mounting, resulting in improved therm al conduction, and allows visual Inspection of soldered joints. The formed leads absorb thermal stress during


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PDF OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 PZT2222AT1 Transistor p1f SOT-223 P1f MARKING P1F motorola p1f on semiconductor p1f P1F transistor
SOT-223 P1f

Abstract: Transistor p1f p1f sot-223 P1F sot223 on semiconductor p1f sot223 P1F PZT2222AT1G P1F transistor PZT2222AT1 318E-04
Text: PZT2222AT1 Preferred Device NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features · PNP Complement is PZT2907AT1 · The SOT-223 package can be soldered using wave or reflow · SOT-223 package ensures level mounting, resulting in improved SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT


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PDF PZT2222AT1 OT-223 PZT2907AT1 OT-223 reel94 SOT-223 P1f Transistor p1f p1f sot-223 P1F sot223 on semiconductor p1f sot223 P1F PZT2222AT1G P1F transistor PZT2222AT1 318E-04
2001 - SOT-223 P1f

Abstract: Transistor p1f MARKING P1F on semiconductor p1f P1F transistor P1F NPN transistor p1f transistor pnp
Text: ON Semiconductort NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. · PNP Complement is PZT2907AT1 · The SOT-223 package can be soldered using wave or reflow. · SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb


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PDF OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 PZT2222AT1 SOT-223 P1f Transistor p1f MARKING P1F on semiconductor p1f P1F transistor P1F NPN transistor p1f transistor pnp
1am surface mount diode

Abstract: c845 G1 TRANSISTOR SOT 23 PNP 2GM sot-23 transistor P1F marking 2F PNP SOT23 c845 TO 92 p2f sot-223 AS3 SOT223 SOT-223 P1f
Text: Plastic-Encapsulated Surface Mount High-Voltage Transistors PZT2907AT1 P2F 45 100 60 100 300 50 200 Pinout: 1— Base, 2


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PDF O-226AA O-236AB OT-23) OT-223) MMBTA42LT1 MMBT5551LT1 BSP52T1 1am surface mount diode c845 G1 TRANSISTOR SOT 23 PNP 2GM sot-23 transistor P1F marking 2F PNP SOT23 c845 TO 92 p2f sot-223 AS3 SOT223 SOT-223 P1f
irf 3502

Abstract: S12-1A02-01L RSF74Y100RM PALCE16V8Z25PC REF198 S10K250 PALCE16V8Z-25PC SA555P P87C52EFAA irf 819
Text: RFP50N05L 4.17 INT 824 S14K50 0.70 EPC 809 P6SMB33AT3 0.27 ONS 851 PZT2907AT1 0.42 ONS 845 RFP50N06 0.81 INT


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PDF P6KE20CA PVD1354 REF195FS S10K14 PVD3354 REF195GP S10K150 P6KE24A PVDZ172N irf 3502 S12-1A02-01L RSF74Y100RM PALCE16V8Z25PC REF198 S10K250 PALCE16V8Z-25PC SA555P P87C52EFAA irf 819
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