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    Cornell Dubilier Electronics Inc
    103PWS102KG CAP FILM 10000PF 10% 1KVDC AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
    Digi-Key 103PWS102KG Bulk - - - - - Buy Now
    Illinois Capacitor Inc
    103PWS102KG Polypropylene Film Capacitor - 0.01uF ±10% - 1000WVDC - +105°C
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
    Onlinecomponents.com 103PWS102KG - - - $0.73 $0.73 Buy Now
    RCD Components Inc
    PWS-100-JBW
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
    Bristol Electronics PWS-100-JBW 1,000 - - - - - Get Quote
    Progressive Marketing Products Inc
    LPWS100 ADJUSTABLE MOBILE STAND FOR IPAD TO HOLD
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
    NAC LPWS100 - - - - - Get Quote
    Chemtronics
    GPWS100 WIPE, ISOPROPYL ALCOHOL, 130 X200MM
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
    Farnell GPWS100 Pack 13 6 Weeks, 1 Days 1 £15.21 £15.21 £13.04 £13.04 £13.04 Buy Now

    PWS10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags
    2sa1232

    Abstract: ITT 232-2 2SC3012
    Text: T, 150 "C rf ¡s a Tstg -55- + 150 "C * PWS10 ms, Duty Cycle S 50 ^Siiflfitt


    OCR Scan     		PDF 232/2SC301 2SA1232 2SC3012 PWS10 2SA1232/2SC3012 PWS350 ITT 232-2 2SC3012
    2SJ182

    Abstract: Hitachi 2SJ
    Text: Temperature T.t, 150 Storage Temperature T,„ 55- 1 150 j \Z POWER VS. TEMPERATURE DERATING + PWS10


    OCR Scan     		PDF 2SJ182 2SJ182 Temper50V, --10V Hitachi 2SJ
    Not Available

    Abstract: No abstract text available
    Text: 2SK1422 AP (A d v a n c e d P e rfo rm a n c e ) S eries 2056 V dss= 6 0 V N Channel Power M OSFET Features · Low ON-state resistance. · Very high-speed switching. Converters. Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage 60 V Vdss Gate to Source Voltage ±20 V Vgss Drain Current(DC) 50 A Id Drain Current(Pulse) Idp PWS10 //S, duty cycleS 1% 200 A Allowable Power Dissipation PD Tc = 25°C 100 W 2.5 W Tch Channel Temperature 150 °C Tstg Storage Temperature -5 5 to +150 °C


    OCR Scan     		PDF 2SK1422 PWS10//S,
    2sd1310

    Abstract: No abstract text available
    Text: ,»25 c) 1.3 W i> -V V ? 3 > im IS TI 150 'c « ff £ It Tstg -55-+ 150 •C ♦ PWS10 ms, duty


    OCR Scan     		PDF 2SD1310 O-22Offlfà PWS10 2sd1310
    2SK1135

    Abstract: No abstract text available
    Text: €”55—-f 150 "C & Q ♦ PWS10 /U5. duty cycles\% * »Value at Tc-25'C SO 100 Case Temperature 7c ( TC ) I


    OCR Scan     		PDF DG131Ã PWS10/U5. -2SK1135 2SK1135
    k1341

    Abstract: 2SKI34 k134 2SK1341
    Text: DERATING (TO-3P) * PWS10 /JS. duty cj-cleSl% » » Vaiue at T, -25'c ELECTRICAL CHARACTERISTICS (Ta~25


    OCR Scan     		PDF 2SKI34T 7c-25 2SK1341 k1341 2SKI34 k134 2SK1341
    Not Available

    Abstract: No abstract text available
    Text: to rag e T em perature PWS10 /I8, duty cycle£l% Value at Te -2S*C Symbol Vdss V ^câs h Ioirut*-


    OCR Scan     		PDF 2SJ171 -220AB) PWS10/I8, 2SJ171
    2SK1474

    Abstract: 3775A M19-6
    Text: 2SK1474 2083A_2092A LP (Low Drive) Series VDss=100V INI Channel Power MOSFET ©3775A Features • Low ON resistance. ■Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage Vdss 100 V Gate to Source Voltage Vgss ±15 V Drain Current(DC) Id 4 A Drain Current(Pulse) Idp PWS10 /.S, duty cycled 1% 16 A Allowable Power Dissipation Pd Tc = 25°C 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C ectrical


    OCR Scan     		PDF 2SK1474 2092A PWS10/ 100//A DD13Ti3 2SK1474 3775A M19-6
    m117

    Abstract: 2SJ290 2SK134 2SK1340
    Text: Temperature T.„ -55-4150 *c POWER VS. TEMPERATURE DERATING < PWS10 //Ü. duty f veli SI % + + Value ai Te


    OCR Scan     		PDF 2SK1340 PWS10//Ã Te-25 2SJ290 m117 2SK134 2SK1340
    2sk1461

    Abstract: 34641
    Text: 2SK1461 2056 U H (U ltra h ig h V o lta g e ) S eries V OSs = 9 0 0 V N Channel P o w er M O S F E T F eatures Low ON-state resistance. · Very high-speed switching. · Converters. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage VGSS Drain Current(DC) Id Drain Current(Pulse) PWS10 //S, duty cycles 1% Idp Allowable Power Dissipation P d Tc=25°C Channel Temperature Tch Storage Temperature Tstg 900 ±30 5 10 120 2.5 150 -55 to +150 unit V V A A °C °C W w


    OCR Scan     		PDF 2SK1461 PWS10//S, Vos-10V 2sk1461 34641
    Not Available

    Abstract: No abstract text available
    Text: temperature Storage temperature * PwS10 /iS, DutycydeS1% · P a c k a g in g specifications Package Type Code


    OCR Scan     		PDF 2SK2503 SC-63 77F521 do--30V
    transistor C982

    Abstract: BN1F4M C982 BA1F4M H150 55-H150
    Text: * PWS10 ms, Duty Cycled 50 % «mau^ti (TA - 25 °C) n a £ ft MIN. TYP. MAX. # {XL 3 ^ 9 9 l ^ m M iM


    OCR Scan     		PDF PWS10 -7S24 transistor C982 BN1F4M C982 BA1F4M H150 55-H150
    transistor NEC gk 052

    Abstract: SKSB cq022 th 2190 LT 7824 lm 4011 T460-8525 in089 7824 cfa 326
    Text: • 5/— h Compound Transistor BN1F4Z n m (Ri = 22 kQ) O BA1F4Z t ? >y°<) S > ? <) TIM Tè È t0 miMXZte (Ta = 25 °C) II g \tL aw 9 9 • ^-xTaMffi VcBO -60 V ; .y ?F$W± VcEO -50 V i ì -y 9 ■^-xfiSE Vebo - 5 V =iu9 9W.)M( Ä ¡ft) Ic 9 -y 3 > & IS. Ti 150 °C m ff & Ä Tslg — 55—h 150 °c * PWS10 ms, Duty Cycle^50 % imau^-ft (TA = 25 °C) mm : mm) 2.0 + 0.2 6' 4- o 6 . O «Sii» 1. Emitter 2


    OCR Scan     		PDF PWS10 -5S11 transistor NEC gk 052 SKSB cq022 th 2190 LT 7824 lm 4011 T460-8525 in089 7824 cfa 326
    ET 7824

    Abstract: MA 7824 BAIL3Z
    Text: ZT—^ • S/—H Compound Transistor BAI L3Z « it (Ri = 4.7 kQ) o—wv R, OBN1L3Z t 9 yf U JM @ 5E fé # fi ^ u ? ? • VcBO 60 V VcEO 50 V i ì -y ? • ^XflfE VEBO 5 V =i is ? ? Mìjhìé: iti) IC(DC) 100 mA Zi V 9 9 % ìfii^ìVX) T + lC(pulse) 200 mA £ Iii ^ Pt 250 mW / f > y' / 3 > Ìm JJE Ti 150 °C # Tstg — 55— +• 150 °C : mm) 6 1 . Emitter 2 . Collector 3 . Base * PWS10 ms, Duty Cycleg50 % *ÄW4#tt(TA = 25 °C) im e B& "t • £ ft MIN. TYP. MAX. -¥- \ÌL


    OCR Scan     		PDF PWS10 Cycleg50 ET 7824 MA 7824 BAIL3Z
    MA 7824

    Abstract: tl 7824 rafi bn1l4m
    Text:  Compound Transistor BN1L4M m. (Ri = 47 kQ, R2 = 47 kQ) mm Wl : mm) o BA1L4M i a >7°'J / > ^ U T-ISffl-Cl' it. (TA = 25 °C) m @ «8- ' "t 5e fe -P- ii VcBO -60 V fjfl^BE Vceo -50 V J. = -y 9 • Vebo -10 V n 9 9 % iH (E m Ic(DO -100 mA =i \s 9 9 (^/PX) T * ■lc(pulse) -200 mA £ II ^c Pt 250 mW i? > 9 .3 > & JM Tj 150 °C ft it & m Tstg — 55— +150 * PW=S10 ms, Duty Cycled50 % «SlflWtt (TA = 25 °C) n g £ ft MIN. TYP. MAX. IcBO Vcb=-50 V, IE = 0 -100 nA s m m sit


    OCR Scan     		PDF Cycled50 MA 7824 tl 7824 rafi bn1l4m
    Not Available

    Abstract: No abstract text available
    Text: 3T—5* • S/—h Compound Transistor GN1L3M mute ic PNPi ti « tt (Ri =4.7 kû, R2 = 4.7 k£2) o GA1L3M t => > 7° U / > ? ij Tftk'flJ tïit (Ta = 25 °C ) * PWS10 m s, Duty CycleS50 % SlttŒtt (Ta = 25 °C) m H «S ö- Ali fó H'- fö V('BO -60 V frl'SEE Vc-KO -50 V i = •■/ 9 • X^IILE Vebo -10 V 3 u 7 9MUù (tì. iÂ) Ic(DO -100 mA => 7 9 MiM. ('-'is*) T * ICIpuUel -200 raA Ê: m k Pt 150 mW y t > ? y 3 > iü t T, 150 °C fs r+ m ® Tstg — 55—h 150 °C ftï&IKTO : mm


    OCR Scan     		PDF PWS10 CycleS50
    PM7540

    Abstract: 2sc2275 2SA985 NEC TEA 7540 IC 2SA985 2SC2275A TEA-509 MEB-504 1444A 7824 5A
    Text: -+ 150 55~ +150 •C • PWS10 m*. duly eyck£50 % mmttfttë (Ta=25"C) H * ? fc # MIN. TYP. MAX. 3 v


    OCR Scan     		PDF 2SA985 85A/2SC2275 985/2SA9 2SC2275/2SC2275A PWS10 PM7540 2sc2275 2SA985 NEC TEA 7540 IC 2SC2275A TEA-509 MEB-504 1444A 7824 5A
    vav99

    Abstract: yr yf
    Text: . Collector 3. Emitter 4. Collector (Fin) * PWS10 ms, Duty CycleS50 % tÄWWtt (Ta=25 °C) II s mg. ^ £ fi


    OCR Scan     		PDF PWS10 CycleS50 5qMt51EÃ 43iSHt8tS! vav99 yr yf
    2SB772

    Abstract: 2SB77
    Text: RESISTANCE vs. PULSE WIDTH 1 3 10 30 100 300 1000 PW-Pulse Width-ms SAFE OPERATING AREAS .1 u.v / PWS10 mÂ


    OCR Scan     		PDF 2SB772 2SB772 2SB77
    2SK1199

    Abstract: ir2a Hitachi Scans-001 ir2a diode diode ir2a
    Text: Dissipation 50 W Channel Temperature 150 'C Storage Temperature T,„ —55—+ 150 'C * PWS10 /«, duty


    OCR Scan     		PDF GG13EaT T0-220AB) PWS10/Â 7c-25 44Tb20S DG13532 2SK1199_ 2SK1199 ir2a Hitachi Scans-001 ir2a diode diode ir2a
    2SB1149

    Abstract: 2SD1692 T460
    Text: €”h 150 °c * PWS10 ms, Duty CycleS50 % PACKAGE DIMENSIONS (Unit : mm) 8.5 MAX. 3.2 ±0.2 2.8 MAX


    OCR Scan     		PDF 2SB1149 2SD1692 PWS10 CycleS50 2SB1149 T460
    2SJ268

    Abstract: No abstract text available
    Text: Voltage vgss ±15 V Drain Current(DC) Id -18 A Drain Current(Pulse) Idp PWS10 //s, duty cycles 1


    OCR Scan     		PDF 2SJ268 2SJ268-applied PWS10//s, 2SJ268
    ki400a

    Abstract: K1400A 2SK1400 2SK1400A K1400 lo205
    Text: Temperature Tslg * PWS10 /


    OCR Scan     		PDF 2SK1400 2SK1400A ki400a K1400A 2SK1400A K1400 lo205
    2SK2299N

    Abstract: No abstract text available
    Text: (Tc=25"C) Channel temperature Storage temperature * Pw¡S10 ,i¡s, Duty cycteál% Tch Tstg ·c °C


    OCR Scan     		PDF 2SK2299N O-220FN Taa25 2SK2299N
    Not Available

    Abstract: No abstract text available
    Text: temperature Storage temperature * PwS10 >is, DutycycleSlStf Symbol V dss V gss Id Limits 450 ±30 5 20 5


    OCR Scan     		PDF 2SK2713 12n-cv O-220FN
    ...

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