PTF180101 |
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Infineon Technologies
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LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz |
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PTF180101M |
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Infineon Technologies
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1800 MHz to 2000 MHz; Package: PG-RFP-10; Flange Type: Surface Mount; Matching: None; Frequency Band: 1,000.0 - 2,000.0 MHz; P1dB (typ): 10.0 W; Supply Voltage: 28.0 V |
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Original |
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PTF180101MV1 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W TSSOP-10 |
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Original |
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PTF180101M V1 |
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Infineon Technologies
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IC FET RF LDMOS 10W TSSOP-10 |
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Original |
PDF
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PTF180101S |
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Infineon Technologies
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LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz |
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Original |
PDF
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PTF180101S V1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 1.99GHZ H-32259-2 |
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Original |
PDF
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PTF180101SV1 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W H-32259-2 |
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Original |
PDF
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