encoder decoder pt2262 and 2272
Abstract: PT2262 ENCODER PT2272 DECODER PRELIMINARY ic pt2262 PTC 2272 PT2272-L4 PT2272-M2 IC 2272 2272-L4 ic PT2272 pt2262
Text: =4V Vcc=12V VOL=6V 2 Ã ³ 12 * mA mA mA Output Drive Current PT-2262 DO IOH Vcc = 5 V VOH=3V Vcc = 8V VOH , CONTROL LOGIC â ¡ IO PS â¡a PT -2272- la M4 BLOCK DIAGRAM NOTE: PT2272-L6/M6 IS IDENTICAL WITH PT -2272-L4/M4 EXCEPT FOR THE NUMBER OF DATA AND ADDRESS BITS. â 1 5 1 1 I it in 1 it El 1-1 111 , APPLICATION CIRCUIT * RE) -r 12V m 1B 17 16 15 14 PT-2262 1 9 u / i BCXlA rti m IN THIS , PTC standard product code system is shown as follows: Example: 2262 PT -2272-XX-E T~ t-Package Code
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73fllGb4
Q0Q0017
PT2262
PT2272
PT2272-M6
PT-2272-XX-E
encoder decoder pt2262 and 2272
PT2262 ENCODER PT2272 DECODER PRELIMINARY
ic pt2262
PTC 2272
PT2272-L4
PT2272-M2
IC 2272
2272-L4
ic PT2272
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PT2262
Abstract: PT2262 ENCODER PT2272 DECODER PRELIMINARY ic pt2262 PT2272-L6 PT2272-L2 ptc 2262 2262 encoder ir encoder decoder 4 bit PT2272 M4 PT2272-L4
Text: VOL=1V Vcc = 8V VOL=4V Vcc=12V VOL=6V 2 à ³ 12 * mA mA mA Output Drive Current PT-2262 DO IOH Vcc = 5 , DETECTOR SYNC DETECTOR DECODER LOGIC DATA OUTPUT CONTROL LOGIC â ¡ IO PS â¡a PT -2272- la M4 , â¢â¢â¢ fc.^ f ; APPLICATION CIRCUIT  £ -r 12V m RE ; 18 17 16 15 14 PTâ 2262 g m , APPLICATION CIRCUIT t 12V m RE) 1B 17 16 15 14 PT-2262 1 9 i BCXlA rti u / m K IN THIS , as follows: Example: 2262 PT -2272-XX-E I_ L Package Code Specific Code Part Number Prefix of PTC
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73fllGb4
Q0Q0017
PT2262
PT2272
PT-2272-XX-E
PT2262 ENCODER PT2272 DECODER PRELIMINARY
ic pt2262
PT2272-L6
PT2272-L2
ptc 2262
2262 encoder
ir encoder decoder 4 bit
PT2272 M4
PT2272-L4
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IC 2272
Abstract: 2272 m4 2272 l4 pt2272 TRANSMITTER PTC 2272 PT2272-L4 PT2272-L2 IC pt 2262 ic PT2272 M4 PT2262 ENCODER PT2272 DECODER PRELIMINARY
Text: DETECTOR SYNC DETECTOR DECODER LOGIC DATA OUTPUT CONTROL LOGIC â ¡ IO pa â ¡8 PT -2272- la M4 , IOL Vcc = 5 V VOL=1V Vcc = 8V VOL=4V Vcc=12V VOL=6V 2 6 12 * mA mA mA Output Drive Current PT-2262 , APPLICATION CIRCUIT * RE) -r 12V m 1B 17 16 15 14 PT-2262 1 9 u / i BCXlA rti m IN THIS , data bits output. The PTC standard product code system is shown as follows: Example: 2262 PT ,  â â¢'Ãr-T.- ~' PRINCETON TECHNOLOGY SME  » 73ûlGb4 Q0Q0017 T PT2262 ENCODER PT2272
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Q0Q0017
PT2262
PT2272
PT2272-M6
PT-2272-XX-E
IC 2272
2272 m4
2272 l4
pt2272 TRANSMITTER
PTC 2272
PT2272-L4
PT2272-L2
IC pt 2262
ic PT2272 M4
PT2262 ENCODER PT2272 DECODER PRELIMINARY
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1999 - 2272 decoder
Abstract: RF receiver pt2272 pt2272 receiver PT2272-M4 2272 m4 RF remote control pt2272 pt2272 2272 PT2272-L4 Remote Control Decoder
Text: ://www.princeton.com.tw Remote Control Decoder PT 2272 PT 2272 is a remote control decoder paired with PT 2262 utilizing CMOS Technology. It has 12 bits of tri-state address pins providing a maximum of 531,441 (or 312 , : 886-2-29174598 URL: http://www.princeton.com.tw Remote Control Decoder PT 2272 A . 18- Pin Package , possibilities. PT 2272 is available in several options to suit every application need : variable number of data , PT2272 v 3.4 Tel: 886-2-29162151 Fax: 886-2-29174598 URL: http://www.princeton.com.tw PT 2272
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20-Pin
PT2272-S
PT2272A-L2S
PT2272A-M2S
PT2272-L3S
PT2272-M3S
PT2272-L4S
PT2272-M4S
PT2272-L5S
PT2272-M5S
2272 decoder
RF receiver pt2272
pt2272 receiver
PT2272-M4
2272 m4
RF remote control pt2272
pt2272
2272
PT2272-L4
Remote Control Decoder
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1999 - 2272 DECODER
Abstract: RF receiver pt2272 RF remote control pt2272 PT2272-M4 pt2272 receiver pt2272 2272 Remote Control Decoder 3 pins Variable resistor 1M ohm PT 2262 A
Text: Decoder PT 2272 PT 2272 is a remote control decoder paired with PT 2262 utilizing CMOS Technology. It has 12 bits of tri-state address pins providing a maximum of 531,441 (or 312) address codes; thereby, drastically reducing any code collision and unauthorized code scanning possibilities. PT 2272 is , : 886-2-29174598 URL: http://www.princeton.com.tw Remote Control Decoder PT 2272 A . 18- Pin Package , PT2272 v 3.4 PT 2272 Page 2 Revised August 1999 Tel: 886-2-29162151 Fax: 886-2-29174598
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20-Pin
PT2272-S
PT2272A-L2S
PT2272A-M2S
PT2272-L3S
PT2272-M3S
PT2272-L4S
PT2272-M4S
PT2272-L5S
PT2272-M5S
2272 DECODER
RF receiver pt2272
RF remote control pt2272
PT2272-M4
pt2272 receiver
pt2272
2272
Remote Control Decoder
3 pins Variable resistor 1M ohm
PT 2262 A
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harris 723
Abstract: samsung 1622
Text: Power at 8 GHz · Large Cross Section Ti/ Pt /Au Gates Enhance Durability and Reliability Description The HM F-03140-200 is a packaged version of the HM F03100-200. The chip is a 300 jxm n-channel MESFET , tive layer is formed by ion implantation. Ti/ Pt /Au gate metallization and large`T 'cross section , , thermocompression wedge bonding with gold wire, and a 70 mil hermetically sealed metal/ceramic package make the HMF , 16.9 2.2 -12.4 -28.5 -44.2 -58.2 -67.3 dB -28.40 -25.51 -23.61 - 22.62 -21.94 -22.05 - 22.62 -23.22
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F-03140-200
F03100-200.
harris 723
samsung 1622
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2004 - RF remote control pt2262
Abstract: 2262 encoder IR remote control transmitter circuit ptc 2262 remote control car PT2262 for remote control for garage remote control encoder datasheet for remote control for garage REMOTE CONTROL FOR TOYS
Text: PT2262-S 20 Pins, SO PT2262-IR-S 20 Pins, SO PT 2262 - XX - X Package Code : P : Plastic DIP , Princeton Technology Corp. Remote Control Encoder Tel : 886-2-29162151 Fax : 886-2-29174598 URL: http://www.princeton.com.tw PT2262 PT2262 is a remote control encoder paired with PT2272 utilizing CMOS Technology. It encodes data and address pins into a serial coded waveform suitable for RF or IR modulation. PT2262 has a maximum of 12 bits of tri-state address pins providing up to 531,441
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PT2262
PT2262
PT2272
PT2262-S18
PT2262-IR
PT2262-S
RF remote control pt2262
2262 encoder
IR remote control transmitter circuit
ptc 2262
remote control car
for remote control for garage
remote control encoder
datasheet for remote control for garage
REMOTE CONTROL FOR TOYS
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Not Available
Abstract: No abstract text available
Text: ! ! 1 1 1 1 1 2345678196A87B6C7B1 Features â ¢ Output Power: P1dB=31.5 dBm (typ.) â ¢ High Gain: GL=16 dB (typ.) â ¢ High Efficiency: PAE =45% (typ.) â ¢ High Linearity: IP3=46 dBm (typ.) â ¢ Class A or Class AB Operation â ¢ Low Cost Description The HWF1687RA is a medium power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost , Dissipation 6W PT [1] [2] RA Package (Ceramic) Hexawave recommends that the quiescent
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HWF1687RA
1234567849A7BCDEF7
2345678196A87B6C7B1
HWF1687RA
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2007 - IP-346
Abstract: HWF1687RA
Text: Linearity: IP3=46 dBm (typ.) · Class A or Class AB Operation · Low Cost Description The HWF1687RA is a , a low cost, surface-mountable ceramic package. Absolute Maximum Ratings VDS [1] Drain to , +175°C Power Dissipation 6W PT [1] [2] RA Package (Ceramic) Hexawave recommends that , 14 16 18 20 Total Power Dissipation, PT (W) Power Derating Curve 7 (25,6) 6 5 4 , 0.534 -140.20 0.923 0.923 176.42 174.25 2.356 2.262 30.28 -11.47 0.545 0.556
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HWF1687RA
HWF1687RA
IP-346
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HMF-1200
Abstract: HMF12000-200 hmf-12
Text: g 1 HARRIS nu SE MIC ONDUCTOR ^bE » 43G52b1 0D00221 a « H M S TM j HARRIS PRODUCT , Provides High Power-Added Efficiency · Large Cross Section Ti/ Pt /Au Gates Enhance Durability and , -12020-200 is a packaged version of the HMF12000-200. The chip is a 1200 urn n-channel MESFET with 0.5 urn gate , formed by ion implantation. Ti/ Pt /Au gate metallization and large`T ' cross section minimize parasitic , bonding with gold wire, and a 100 mil hermetically sealed metal/ceramic package make the HM F
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43G52b1
0D00221
F-12020-200
HMF12000-200.
HMF-1200
HMF12000-200
hmf-12
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HMF03010
Abstract: No abstract text available
Text: Large Cross Section Ti/ Pt /Au Gates Enhance Durability and Reliability Description The HMF-03010 is a packaged version of the HMF03000. The chip is a 300 ^m n-channel MESFET with 0.5 nm gate length, utilizing , HARRIS riU SEMICONDUCTOR MbE D HBDSShT 000 01Ö 5 Ö HMS T=3 i- a s " SI HARRIS , . Ti/ Pt /Au gate metallization and large "T" cross section minimize parasitic resistance while providing , , and a 100 mil hermetically sealed metal/ceramic package make the HMF-03010 suitable for the most
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HMF-03010
HMF03000.
HMF03010
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HMF0301
Abstract: No abstract text available
Text: Power-Added Efficiency * Large Cross Section Ti/ Pt /Au Gates Enhance Durability and Reliability H M F -0 3 0 , Screening Available for Source Control Drawings Description The HM F-03010 is a packaged version of the HM F03000. The chip is a 300 nm n-channel M E S F E T with 0.5 p.m gate length, utilizing Harris Microwave's power optimized P5 process. The HM F-03000 active layer is formed by ion implantation. Ti/ Pt /Au , the ruggedness of the chip. Eutectic die attach, thermocompression wedge bonding with gold wire, and a
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F-03010
F03000.
Th736
HMF0301
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HMF-1200
Abstract: samsung 1622
Text: Ti/ Pt /Au Gates Enhance Durability and Reliability Description The HMF-12020-200 is a packaged version of the HMF12000-200. The chip is a 1200 (im n-channel MESFET with 0.5 urn gate length, utilizing , implantation. Ti/ Pt /Au gate metallization and large " T "cross section minimize parasitic resistance while , gold wire, and a 100 mil hermetically sealed metal/ceramic package make the HMF-12020-200 suit able for , 38.0 20.2 4.2 -9.2 -21.9 -35.1 -51.7 -70.1 dB -25.35 -24.58 -24.44 -24.58 -24.88 -24.88 -24.15 - 22.62
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HMF-12020-200
HMF12000-200.
HMF-1200
samsung 1622
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2005 - Not Available
Abstract: No abstract text available
Text: , this optocoupler can be used to drive a discrete power stage, which drives the IGBT gate. The ACNT-H313 has the highest insulation voltage of VIORM = 2262 VPEAK in the IEC/EN/DIN EN 60747-5-5. â , VIORM = 2262 VPEAK 6 NC 5 VEE Applications â ¢ High Power System - 690VAC Drives Notes: - , ACNT-H313 2.5 A Output Current IGBT Gate Drive Optocoupler in 14.2 mm Stretched SO8 Package , integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs
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ACNT-H313
ACNT-H313
AV02-0421EN
AV02-3698EN
AV02-0310EN
AV02-4249EN
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2005 - Not Available
Abstract: No abstract text available
Text: , this optocoupler can be used to drive a discrete power stage, which drives the IGBT gate. The ACNT-H313 has the highest insulation voltage of VIORM = 2262 VPEAK in the IEC/EN/DIN EN 60747-5-5. â , 60747-5-5 VIORM = 2262 VPEAK 6 NC 5 VEE Applications â ¢ 690 V AC application Notes: - NC , ACNT-H313 2.5 A Output Current IGBT Gate Drive Optocoupler in 14.2 mm Stretched SO8 Package , integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs
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ACNT-H313
ACNT-H313
AV02-0421EN
AV02-3698EN
AV02-0310EN
AV02-4249EN
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Not Available
Abstract: No abstract text available
Text: S/X Band Applications * Large Cross Section Ti/ Pt /Au Gates Enhance Durability and Reliability HMF , -1 0 0 Gain Optimized GaAs FET 2-14 GHz Description The HMF-06110-100 is a packaged version of the HMF06100-100. The chip is a 600 (im n-channel MESFET with 0.5 |im gate length, utilizing Harris Microwave's gain optimized G10 process. The HMF-06100-100 active layer is formed by ion implantation. Ti/ Pt , the ruggedness of the chip. Eutectic die attach, thermocompression wedge bonding with gold wire, and a
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HMF-061
HMF-06110-100
HMF06100-100.
pro63
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att 1228
Abstract: No abstract text available
Text: . BLOCK DIAGRAM Designed in BCDII technology, it uses a charge pump technique to h a ve a proper , RDSON of 150mV gives a voltagedrop of 750mV at 5A of load current. Very fast load transients and ±1% of , Input Voltage ADJ pin PG and INH pins Pt o t Parameter Value 7 -0 .3 to 4 0 to 7 2 15 -40 to , ADJ PG OUT Function Unregulated power input voltage; this pin must be bypassed with a capacitor larger than 10|xF. Unregulated signal input voltage this pin has to be by passed with a minimum capacitor
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L4956
L4956
att 1228
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Not Available
Abstract: No abstract text available
Text: FETs (C-Band) Features â ¢ Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level â ¢ H i g h power - PldB = 44.5 dBm at 7.7 GHz to 8.5 GHz â ¢ High gain - G1dB = 6.0 dB at 7.7 GHz to 8.5 GHz â ¢ Broad band internally matched â ¢ Hermetically sealed package RF , Compression Point Condition Max 43.5 44.5 - dB 5.0 6.0 - A - 8.0 9.0 Drain Current b si Gain Flatness AG dB - - Â ±0.8 Power Added Efficiency tladd
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TIM7785-30L
TIM7785-30L
MW51140196
DD22b3D
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T01A
Abstract: regulator t01a TDA8132
Text: OUTPUTS THERMAL PROTECTION LOW DROP OUTPUT VOLTAGE DESCRIPTION The TDA8132 is a monolithic dual , up to 1 A . Each output can be disabled separately by a TTL input. Short circuit and thermal , INPUT 1 August 1995 1/4 "Tliis is advance information on a now product now in development or , TDA8132 is a dual voltage regulatorwilh separate Disable for each output. The two regulation parts are , MAXIMUM RATINGS not supplied. The outputsstage have been realized in darlington configuration with a
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TDA8132
TDA8132
T01A
regulator t01a
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1996 - 8132
Abstract: TDA8132
Text: DESCRIPTION The TDA8132 is a monolithic dual positive voltage regulator designed to provide fixed precision output voltages of 5.1V and 12V at currents up to 1A. Each output can be disabled separately by a TTL , CIRCUIT DESCRIPTION The TDA8132 is a dual voltage regulator with separate Disable for each output. The , with a drop typical 1.2V. For each output a disable circuit switches-off this output if a voltage , Dissipation Internally Limited Pt Tstg Tj -65, +150 Junction Temperature o C 0, +150
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TDA8132
TDA8132
8132
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k 1413 FET
Abstract: AY 1241
Text: Storage Temperature SYMBOL V DS V GS IDS PT T ch Tstg UNIT V V A W RATING 15 -5 26 120 175 -65^175 °c , TOSHIBA MICROWAVE SEMICONDUCTOR M I C R O W A V E P O W E R GaAs FET TECHNICAL DATA , R M A N C E S P E C I F I C A T I O N S ( T a = 2 5 ° C) CONDITION UNIT dBm V DS- 10 V f =7. 7~8. 5 G H z dB A dB CHARACTERISTICS SYMBOL Output Power at ldB Comp ression Point Power Gain at ldB Comp ression Point Drain Current G a in F la tn e s s MIN. 43 .5 5 .0 -40 - TYP. 44 .5 6 .0
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TIM7785-30L-------TIM7785-30L
k 1413 FET
AY 1241
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Not Available
Abstract: No abstract text available
Text: ) ORDER CODE : TDA8132 DESCRIPTION The TDA8132 is a monolithic dual positive voltage , be disabled separately by a TTL input. Short circuit and thermal protections are included. PIN , DISABLE FOR OUTPUT2 2 â â ) F J> INPUT 2 INPUT 1 Tab. connected to Pin 4 , 1 5 DISABLE à PROTECTION DISABLE DISABLE OUTPUT 2 DISABLE OUTPUT2 TDA8132 CIRCUIT DESCRIPTION The TDA8132 is a dual voltage regulatorwith sepa rate Disable for each
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TDA8132
TDA8132
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Not Available
Abstract: No abstract text available
Text: .,LTD. molex B *=E U "j 9 SEE NOTES R E V IS E D (JC2QQ3- 2262 ) R E V IS E D A Q , Jif3 NOTES Â © cn ID-52893-* IT b M b T S C b RE DETAILED DIMENSION, SEE SD-52893-* IT W , 0 p c s âm in m cn co :d :o n TOP TA PE BONDED PA R T .(E M PT Y ) - PU LL OUT DIRECTION PULL OUT DIRECTION 400 n @4 C D s. 4. b ' T A y - A , ( IgT 4(2) MIN. - T l.4gf) A , A T A A II3 A y7 b 7(CISPIo ({SU Â ®AB7(3SA*#SALTd:C
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ID-52893-*
SD-52893-*
000ECS/REEL
59N9803S
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1996 - by 8132
Abstract: 8132 TDA8132
Text: DESCRIPTION The TDA8132 is a monolithic dual positive voltage regulator designedto provide fixed precision output voltages of 5.1V and 12V at currents up to 1A. Each output can be disabled separately by a TTL , DESCRIPTION The TDA8132 is a dual voltage regulator with separate Disable for each output. The two , Pin 1 is not supplied. The outputs stage have been realized in darlington configuration with a drop typical 1.2V. For each output a disable circuit switches-off this output if a voltage lower than
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TDA8132
TDA8132
by 8132
8132
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2003 - STV8131
Abstract: s 816 VOLTAGE REGULATOR equivalent stv8131
Text: Thermal Protection s Low Drop Output Voltage DESCRIPTION The STV8131 is a monolithic dual positive , . Each output can be disabled separately by a TTL input. Short circuit and thermal protections are , September 2003 This is preliminary information on a new product now in development. Details are subject to , CIRCUIT DESCRIPTION The STV8131 is a dual voltage regulator with separate Disable for each output. The , with a drop typical 1.2V. For each output a disable circuit switches-off this output if a voltage
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STV8131
STV8131
s 816 VOLTAGE REGULATOR
equivalent stv8131
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