PSMN038-100K |
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NXP Semiconductors
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PSMN038-100K - N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 6.3 A; Qgd (typ): 16 nC; RDS(on): 38@10V mOhm; VDSmax: 100 V |
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PSMN038-100K |
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Philips Semiconductors
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N-Channel Enhancement Mode Field-Effect Transistor |
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PSMN038-100K,118 |
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NXP Semiconductors
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PSMN038-100K - N-channel TrenchMOS SiliconMAX standard level FET, SOT96-1 Package, Standard Marking, Reel Pack, SMD, 13" |
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PSMN038-100K,518 |
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NXP Semiconductors
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PSMN038-100 - TRANSISTOR 6300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal |
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PSMN038-100K,518 |
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NXP Semiconductors
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N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 6.3 A; Qgd (typ): 16 nC; RDS(on): 38@10V mOhm; VDSmax: 100 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13" |
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PSMN038-100K/T3 |
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NXP Semiconductors
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N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 6.3 A; Qgd (typ): 16 nC; RDS(on): 38@10V mOhm; VDSmax: 100 V |
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Original |
PDF
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