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Part Manufacturer Description Datasheet Download Buy Part
LTC1264-7CSW Linear Technology LTC1264-7 - Linear Phase, Group Delay Equalized, 8th Order Lowpass Filter; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1264-7CN Linear Technology LTC1264-7 - Linear Phase, Group Delay Equalized, 8th Order Lowpass Filter; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C
LTC1264-7CSW#PBF Linear Technology LTC1264-7 - Linear Phase, Group Delay Equalized, 8th Order Lowpass Filter; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1264-7CSW#TRPBF Linear Technology LTC1264-7 - Linear Phase, Group Delay Equalized, 8th Order Lowpass Filter; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1264-7CSW#TR Linear Technology LTC1264-7 - Linear Phase, Group Delay Equalized, 8th Order Lowpass Filter; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1264-7CN#PBF Linear Technology LTC1264-7 - Linear Phase, Group Delay Equalized, 8th Order Lowpass Filter; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C

PROFET-. Semiconductor Group Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - diode zener ZL 7

Abstract: BTS432F BTS542D BTS 640S2 S 409L1 BTS432E diode zener ZL 7.5 BTS 542D BTS432D2 BTS542
Text: Vbb0 V(line) V bb Fig. 7.14: Rise in ground potential of a PROFET Semiconductor Group , external diode between Vbb and GND Semiconductor Group ZL V bb0 Vbb Fig. 7.3: PROFET with , Semiconductor Group 7-2 04.Mar.97 PROFET-Description S Vbb Rbb *) GND OUT Z1 ZL V , the GND path of the PROFET (Fig.7.9). Semiconductor Group 7-3 04 , V bb0 Fig. 7.12: PROFET with `low drop' zener diode Semiconductor Group ZD PROFET


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PDF 409L1 410x2 412B2 432x2 442x2 426L1 726L1 734L1 611L1 612N1 diode zener ZL 7 BTS432F BTS542D BTS 640S2 S 409L1 BTS432E diode zener ZL 7.5 BTS 542D BTS432D2 BTS542
1998 - BTS660P

Abstract: E3180 Q67060-S6308-A2 PROFET-. Semiconductor Group
Text: dissipation in the PROFET . Semiconductor Group Page 8 1998-Dec-21 Target Data Sheet BTS660P , required for energized inductive loads (see page 9). Semiconductor Group Page 1 of 16 1998 , . Semiconductor Group Page 2 1998-Dec-21 Target Data Sheet BTS660P Thermal Characteristics Parameter , reverse battery voltage capability is simply possible as described on page 9. 15 Semiconductor Group , almost Vbb. Semiconductor Group Page 6 1998-Dec-21 Target Data Sheet BTS660P Truth Table


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PDF BTS660P 220AB/7, E3180 BTS660P E3180A Q67060-S6308-A4 1998-Dec-21 Q67060-S6308-A2 PROFET-. Semiconductor Group
1998 - PROFET-. Semiconductor Group

Abstract: BTS650P E3180 smd code 842
Text: dissipation in the PROFET . Semiconductor Group Page 8 1998-Nov.-2 BTS650P Overvoltage , energized inductive loads (see page 9). Semiconductor Group Page 1 of 16 1998-Nov.-2 BTS650P , to the generator per ISO 7637-1 and DIN 40839. Semiconductor Group Page 2 1998 , ) Semiconductor Group Page 3 1998-Nov.-2 BTS650P Inverse Load Current Operation On-state resistance , page 9. 13 Semiconductor Group Page 4 1998-Nov.-2 BTS650P Parameter and Conditions


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PDF BTS650P 220AB/7, E3180 BTS650P E3180A Q67060-S6308-A4 1998-Nov PROFET-. Semiconductor Group smd code 842
PROFET-. Semiconductor Group

Abstract: Q67060 650P BTS650P Q67060-S6308-A2 INV55
Text: the PROFET . Semiconductor Group Page 8 Powered by ICminer.com Electronic-Library Service CopyRight , inductive loads (see page 9). Semiconductor Group Page 1 of 16 1998-NOV.-2 Powered by ICminer.com , . Semiconductor Group Page 2 1998-Nov.-2 Powered by ICminer.com Electronic-Library Service CopyRight 2003 SIEMENS , . Semiconductor Group Page 3 1998-Nov.-2 Powered by ICminer.com Electronic-Library Service CopyRight 2003 SIEMENS , V. 15) See also \/on(cl) in circuit diagram on page 9. Semiconductor Group Page 4 1998


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PDF BTS650P 220AB/7, E3180 E3180A Q67060-S6308-A4 1998-Nov PROFET-. Semiconductor Group Q67060 650P Q67060-S6308-A2 INV55
16V16

Abstract: No abstract text available
Text: dissipation in the PROFET . Semiconductor Group Page 8 1998-Dec-21 SIEMENS Overvoltage protection , . Additional external diode required for energized inductive loads (see page 9). Semiconductor Group Page , DIN 40839. Semiconductor Group Page 2 1998-Dec-21 SIEMENS Thermal Characteristics , is about 105°C under these conditions. 1 1 ) See timing diagram on page 14. Semiconductor Group , ~Vbb-3V. See also Von (CL) in circuit diagram on page 9. Semiconductor Group Page 4 1998


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PDF BTS660P O-22QAB/7 Q67060-S6308-A2 220AB/7, E3180 BTS660P E3180A Q67060-S6308-A4 1998-Dec-21 16V16
1997 - smart parking circuit diagram

Abstract: siemens functional profet sun resistor 400 mohm siemens soft starter LT1005-S siemens automotive relay dc 12v PROFET-. Semiconductor Group electric assisted power steering system motor BTS550P shunt resistor current motor 1997
Text: important product parameters are listed in Table 1-1. Semiconductor Group 1 High-current PROFET , logic chip demands a more complex and thus more expensive technology. Semiconductor Group 2 , of the switch. Semiconductor Group 3 High-current PROFET® 17th "Automotive Electronics , Semiconductor Group 4 High-current PROFET® 17th "Automotive Electronics" conference 3rd/4th June 1997 , . Semiconductor Group 5 High-current PROFET® 17th "Automotive Electronics" conference 3rd/4th June 1997


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PDF D-81541 smart parking circuit diagram siemens functional profet sun resistor 400 mohm siemens soft starter LT1005-S siemens automotive relay dc 12v PROFET-. Semiconductor Group electric assisted power steering system motor BTS550P shunt resistor current motor 1997
BTS650P

Abstract: 11 kv SIEMENS motor data sheet siemens 12V small relays GPT05167 650P smd transistor 2Q smd code diode 20a Siemens varistor 30 V siemens 230 S6308
Text: the PROFET . Semiconductor Group Page 8 1998-Jan-29 This Material Copyrighted By Its Respective , Semiconductor Group Page 1of18 i998-Jan-29 This Material Copyrighted By Its Respective Manufacturer SIEMENS , . Semiconductor Group Page 2 i998-Jan-29 This Material Copyrighted By Its Respective Manufacturer SIEMENS Target , diagram on page 14. Semiconductor Group Page 3 i998-Jan-29 This Material Copyrighted By Its Respective , and \/out «Vbb-3V. 15) See also \/on(cl) in circuit diagram on page 9. Semiconductor Group Page 4


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PDF 220AB/7, E3180 BTS650P E3180A Q67060-S6308-A4 i998-Jan-29 11 kv SIEMENS motor data sheet siemens 12V small relays GPT05167 650P smd transistor 2Q smd code diode 20a Siemens varistor 30 V siemens 230 S6308
2001 - ST SMD SCR

Abstract: BTS611L1 E-3230 Q67060-S6314 BTS611L1 E3128A BTS612-N1 Q67060-S6302-A4 Q67060-S6302-A2 BTS612N1 profet
Text: the generator per ISO 7637-1 and DIN 40839 Semiconductor Group 2 2003-Oct-01 PROFET , , 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group , . Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 4 2003-Oct-01 PROFET , load detection in off state. Semiconductor Group 5 2003-Oct-01 PROFET® BTS611L1 Parameter , resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 6 2003


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PDF BTS611L1 2003-Oct-01 ST SMD SCR BTS611L1 E-3230 Q67060-S6314 BTS611L1 E3128A BTS612-N1 Q67060-S6302-A4 Q67060-S6302-A2 BTS612N1 profet
2001 - Q67060-S6304-A2

Abstract: BTS621 BTS621L1 profet Q67060-S6304-A4 E3230
Text: the generator per ISO 7637-1 and DIN 40839 Semiconductor Group 2 2003-Oct-01 PROFET , thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 3 , resistor required for open load detection in off state. Semiconductor Group 5 2003 , typ., VZ2 = 47 V typ., RI= 3.5 k typ, RGND= 150 Semiconductor Group IN2 1 V V IN1 IN2 , are necessary. 1 3 5 7 9 11 IL [A] Semiconductor Group 9 2003


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PDF BTS621L1 2003-Oct-01 Q67060-S6304-A2 BTS621 BTS621L1 profet Q67060-S6304-A4 E3230
2002 - BTS 740 s2

Abstract: BTS 740 L2 Q67060-S7012 BTS 740 S5 BTS 740 profet siemens functional description profet BTS current sense siemens
Text: shutdown in ON-state Semiconductor Group Page 1 of 16 Vbb IN1 ST1 IS1 Logic Channel 1 , Semiconductor Group Page 2 (top view) Vbb GND1 IN1 ST1 IS1 GND2 IN2 ST2 IS2 Vbb 1 2 3 4 , Semiconductor Group Page 3 2002-Sep-30 PROFET® BTS 740 S2 Electrical Characteristics Parameter and , supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT Vbb - 2 V Semiconductor Group , by the channel with the lowest VON(CL) Semiconductor Group Page 5 2002-Sep-30 PROFET


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PDF P-DSO-20-9 2002-Sep-30 BTS 740 s2 BTS 740 L2 Q67060-S7012 BTS 740 S5 BTS 740 profet siemens functional description profet BTS current sense siemens
1997 - ptc ZD1 series

Abstract: A1707 BTS555P 80C167 Transistor A1707 B59 diode smd ZD14 ZENER A62 BTS555 BSP350
Text: for a single switch. Note that some PROFET types do Semiconductor Group - Vbb PROFET Von1 , connectors which do not permit reverse Semiconductor Group connection or by a central reverse polarity , Semiconductor Group Vout [20V/div] IGND [3mA/div] timebase [1msec/div] Fig. 5: Load current, output , . 6 must be provided. Q R Semiconductor Group S + low cost + sufficient protection , inductive loads can occur Semiconductor Group c) Diode / Schottky diode If this circuit is used, the


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1997 - BTS412A

Abstract: PROFET BTS 410E profet 409L1 410e2 PROFET-. Semiconductor Group 410H BTS426L1 BTS410E2 BTS 410E
Text: ® PROFET Functional Description & Application Notes Semiconductor Group 04 , . 11-1 Semiconductor Group 04.Mar.97 PROFET-Description 1. Basics The PROFET are a new , Semiconductor Group 1-1 04.Mar.97 PROFET-Description 2. PROFET Functional Description The , circuit (Fig. 2.3) is preferred. Semiconductor Group 2-1 04.Mar.97 PROFET-Description Charge , Semiconductor Group 2-2 04.Mar.97 PROFET-Description component shuts down and a fault signal appears


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PDF BTS426L1) BTS442E2) BTS412A PROFET BTS 410E profet 409L1 410e2 PROFET-. Semiconductor Group 410H BTS426L1 BTS410E2 BTS 410E
2001 - E2 SMD

Abstract: BTS 410 E2 BTS 412-B2 bts412b2 bts 410G2 smd E3062A Q67060-S6102-A2 E3062 BTS410E2 410E2
Text: . Semiconductor Group 1 of 16 2003-Oct-01 BTS 410 E2 Pin Symbol Function 1 GND - , ) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 2003 , of protection functions and circuit diagram page 7. Semiconductor Group 3 2003 , currents have to be limited (see max. ratings page 2 and circuit page 7). 9) Semiconductor Group 4 , . Semiconductor Group 5 2003-Oct-01 BTS 410 E2 Truth Table Status Input- Output level


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PDF 2003-Oct-01 E2 SMD BTS 410 E2 BTS 412-B2 bts412b2 bts 410G2 smd E3062A Q67060-S6102-A2 E3062 BTS410E2 410E2
2001 - UCP 2003

Abstract: BTS430K2 E3122 E-3043 E3122A E3043 bts430 Q67060-S6200-A2 smd zener diode code k2 TO 220 AB 5
Text: Semiconductor Group 1 of 13 2003-Oct-01 BTS430K2 Pin Symbol Function 1 GND - Logic , see internal circuit diagrams page 6. Thermal resistance Semiconductor Group chip - case , , if IST > 0 Semiconductor Group 3 2003-Oct-01 BTS430K2 Parameter and Conditions , to be limited (see max. ratings page 2 and circuit page 7). 6) Semiconductor Group 4 , ratings page 2, circuit page 7 Semiconductor Group 5 2003-Oct-01 BTS430K2 Truth Table Input


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PDF BTS430K2 2003-Oct-01 UCP 2003 BTS430K2 E3122 E-3043 E3122A E3043 bts430 Q67060-S6200-A2 smd zener diode code k2 TO 220 AB 5
1997 - profet

Abstract: BTS410E BTS410E2 PROFET-. Semiconductor Group 04.Mar.97 PROFET-. Semiconductor Group
Text: limiting can be relative to Vbb or relative to GND (Fig. 5.5 and 5.6). Semiconductor Group 5-2 04 , the PROFET is given by: Semiconductor Group 5-3 04.Mar.97 PROFET-Description 1 , exceeded due to switch-off via the input. Semiconductor Group 5-4 04.Mar.97 Siemens , . This will destroy the component if the energy stored in the inductance is too large. Semiconductor Group 5-1 04.Mar.97 PROFET-Description I(Load) [A] V(OUT) [V] 40 20 0 2 4 -20


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1997 - Q67060-S7010-A2

Abstract: No abstract text available
Text: load current limited by connected load. Semiconductor Group 1 08.96 BTS 707 Block diagram , Tstg self-limited -40 .+150 -55 .+150 A °C Semiconductor Group 2 Values Unit , side of solder edge of device pin 15. See page 12 Semiconductor Group 3 BTS 707 Parameter , channel with the lowest VON(CL) Semiconductor Group 4 BTS 707 Parameter and Conditions, each , drop across these resistors. Semiconductor Group 5 BTS 707 Truth Table Channel 1 Channel 2


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PDF P-DSO-20-9 Q67060-S7010-A2 Q67060-S7010-A2
2001 - s6307

Abstract: s6307 internal circuit BTS640S2 Q67060-S6307-A5 Q67060-S6307-A6 Q67060-S6307-A7 1b SMD ZENER DIODE P-TO263-7-2
Text: PROFET Load GND 2 Signal GND Semiconductor Group Page 1 of 15 2003-Oct-01 BTS 640 S2 , generator according to ISO 7637-1 and DIN 40839 Semiconductor Group Page 2 2003-Oct-01 BTS 640 , , 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group , diagram page 9. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 4 2003 , production test, specified by design Semiconductor Group Page 5 2003-Oct-01 BTS 640 S2


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PDF O220-7-11 Q67060-S6307-A6 2003-Oct-01 s6307 s6307 internal circuit BTS640S2 Q67060-S6307-A5 Q67060-S6307-A6 Q67060-S6307-A7 1b SMD ZENER DIODE P-TO263-7-2
1997 - BTS426L1

Abstract: BTS 425 BTS426L1E3043 bts426l1 smd 426-L1
Text: . Semiconductor Group 1 12.96 BTS 426 L1 Pin Symbol Function 1 GND - Logic ground , vertical without blown air. Semiconductor Group 2 BTS 426 L1 Electrical Characteristics , . Semiconductor Group 3 m -10 IL(off) Leakage output current (included in Ibb(off) VIN=0 6 , ) External pull up resistor required for open load detection in off state. 9) Semiconductor Group 4 , bb Semiconductor Group 6 BTS 426 L1 Status output Open-load detection +5V ON-state


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PDF components16) systems17) BTS426L1 BTS 425 BTS426L1E3043 bts426l1 smd 426-L1
2001 - BTS 740 s2

Abstract: BTS 740 S5 BTS 740 profet Q67060-S7012 Q67060-S7012-A2
Text: shutdown in ON-state Semiconductor Group 1 of 15 Vbb IN1 ST1 IS1 Logic Channel 1 IN2 , Semiconductor Group 2 (top view) Vbb GND1 IN1 ST1 IS1 GND2 IN2 ST2 IS2 Vbb 1 2 3 4 5 6 , page 15 Semiconductor Group 3 2003-Oct-01 PROFET® BTS 740 S2 Electrical Characteristics , = 4.7 V typ without charge pump, VOUT Vbb - 2 V Semiconductor Group 4 2003-Oct-01 PROFET , . Semiconductor Group 6 2003-Oct-01 PROFET® BTS 740 S2 Parameter and Conditions, each of the two


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PDF P-DSO-20-9 2003-Oct-01 BTS 740 s2 BTS 740 S5 BTS 740 profet Q67060-S7012 Q67060-S7012-A2
1997 - e3062

Abstract: BTS409L1 E3043 E3062A TD-200 siemens s5
Text: . Semiconductor Group 1 12.96 BTS409L1 Pin Symbol Function 1 GND - Logic ground 2 , vertical without blown air. Semiconductor Group 2 BTS409L1 Electrical Characteristics Parameter , . Semiconductor Group 3 m -10 IL(off) Leakage output current (included in Ibb(off) VIN=0 6 , ) Semiconductor Group 4 BTS409L1 Parameter and Conditions Symbol Values min typ max RI 2.5 , resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 5 Unit


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PDF BTS409L1 O-22al components16) systems17) e3062 BTS409L1 E3043 E3062A TD-200 siemens s5
1997 - BSP 300 "pin compatible"

Abstract: PROFET Q67000-S271 mosfet 452
Text: in series with IN connections reverse load current limited by connected load. Semiconductor Group , with 6 cm2 copper area for V connection bb Semiconductor Group 2 Mini PROFET® BSP 452 , the shortcircuit current IL(SC) of the whole device Semiconductor Group 3 A Mini PROFET , . Semiconductor Group 4 V V V Mini PROFET® BSP 452 Max. allowable power dissipation Ptot = f (TA , 0 100 125 150 Tj [°C] Semiconductor Group 5 2 4 6 8 10 12 14 VIN


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PDF Q67000-S271 BSP 300 "pin compatible" PROFET Q67000-S271 mosfet 452
1997 - Q67000-S271

Abstract: sensor 452
Text: . Semiconductor Group Page 1 of 8 20.08.96 Mini PROFET® BSP 452 Pin Symbol Function 1 OUT , 1.5 mm with 6 cm2 copper area for Vbb connection 3) Semiconductor Group Page 2 20.08.96 , limitation, see IL(SC) Semiconductor Group Page 3 20.08.96 Mini PROFET® BSP 452 Parameter and , diode) is normally limited by the connected load. 9) Semiconductor Group Page 4 20.08.96 , ] Semiconductor Group Page 5 2 4 6 8 10 12 14 VIN [V] 20.08.96 Mini PROFET® BSP


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PDF Q67000-S271 Q67000-S271 sensor 452
2001 - transistor sc 308

Abstract: E3062A 410E2 BTS308 BTS410H2 E3043 E3062
Text: , reverse load current limited by connected load. Semiconductor Group Page 1 of 14 2003 , 6 Thermal resistance Semiconductor Group chip - case: junction - ambient (free air , page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 3 2003 , Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group , , add the voltage drop across this resistor. Semiconductor Group Page 5 2003-Oct-01 BTS 308


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PDF O-220AB/5 2003-Oct-01 transistor sc 308 E3062A 410E2 BTS308 BTS410H2 E3043 E3062
2002 - scr values

Abstract: s6307 Q67060-S6307-A6 Q67060-S6307-A7 BTS640S2 Q67060-S6307-A5 BTS current sense siemens BTS640S2S PTO220-7-12 TRANSISTOR bts 114
Text: GND IS PROFET Load GND 2 Signal GND Semiconductor Group Page 1 of 14 2002 , DUT connected to the generator according to ISO 7637-1 and DIN 40839 Semiconductor Group Page 2 , circuit diagram page 10. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 4 , . Semiconductor Group Page 5 2002-Sep-30 BTS 640 S2 Parameter and Conditions Symbol at Tj = 25 °C , the voltage drop across this resistor. Semiconductor Group Page 6 2002-Sep-30 BTS 640 S2


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PDF BTS640S2 BTS640S2 Q67060-S6307-A6 2002-Sep-30 scr values s6307 Q67060-S6307-A6 Q67060-S6307-A7 Q67060-S6307-A5 BTS current sense siemens BTS640S2S PTO220-7-12 TRANSISTOR bts 114
1997 - bts 410G2 smd

Abstract: 410E2 C67078-S5204-A4 E3043 E3062 E3062A BTS 307
Text: load current limited by connected load. Semiconductor Group 1 08.96 BTS 307 Pin Symbol , 1 ms necessary, if the device is used with higher Vbb. Semiconductor Group 2 BTS 307 , , if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group m 10 2.2 50 - mA BTS 307 , limited (see max. ratings page 2 and circuit page 7). Semiconductor Group 4 BTS 307 Parameter , . Semiconductor Group 5 BTS 307 Truth Table Input- Output level level Normal operation Open


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PDF O-220AB/5 systems13) O-220AB/5, E3043 E3043 C67078-S5204-A3 bts 410G2 smd 410E2 C67078-S5204-A4 E3062 E3062A BTS 307
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