The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1160CN Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C
LT1160CN#PBF Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C
LT1336IS#TR Linear Technology LT1336 - Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C
LT1160CS#PBF Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: SO; Pins: 14; Temperature Range: 0°C to 70°C
LT1336CS#PBF Linear Technology LT1336 - Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LT1160CS#TR Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: SO; Pins: 14; Temperature Range: 0°C to 70°C

POWER MOSFET datasheet (1)

Part Manufacturer Description Type PDF
Power MOSFET single-shot and repetitive avalanche ruggedness rating NXP Semiconductors AN10273 - Power MOSFET single-shot and repetitive avalanche ruggedness rating Original PDF

POWER MOSFET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - Yamaha YDA

Abstract:
Text: /channel on a 12V power supply operation. This IC is combined with the general purpose Power MOSFET of , outputs the digital pulse signal for driving Power MOSFET . The Power MOSFET that is driven by this IC , external low pass filter, and sent to the speakers. By using a general purpose Power MOSFET , very low cost , Power MOSFET into nonconductive state, and mute the output of the device. This IC is configured by two power supply ; 5V for signal processing circuits, and 12V for Power MOSFET driving circuits. Features


Original
PDF YDA135 W-20W Yamaha YDA 9V13 Yamaha YDA* 48 PIN
2007 - 5W-20W

Abstract:
Text: . This IC is combined with the general purpose Power MOSFET (hereafter called Power MOSFET ) that are , outputs the digital pulse signal for driving Power MOSFET . The Power MOSFET that is driven by this IC , external low pass filter, and sent to the speakers. By using a general purpose Power MOSFET , very low , minimum. MUTE signal brings Power MOSFET into nonconductive state, and mute the output of the device. This IC is configured by two power supply ; 5V for signal processing circuits, and 12V for Power MOSFET


Original
PDF YDA135 W-20W YDA135 20kHz) 150mV 20kHz, 5W-20W FW332 Yamaha YDA YDA135-VZ
68HC24

Abstract:
Text: MOSFETs to Logic Devices Prepared by Ken Berringer Motorola Discrete Applications POWER MOSFET DRIVE , low static losses. When driven with sufficient gate voltage, a power MOSFET will turn on and have a very low on-resistance. If the gate voltage is insufficient to bias the Power MOSFET fully on, or excessive drain currents are applied, the power MOSFET will operate in the saturation (pinch-off) region. In , power MOSFET . A new family of Logic Level power MOSFETs are now available that can support their rated


OCR Scan
PDF AN1102/D AN1102 25178T AN1102/D 68HC24 mc14000 series 14049UB 74LS04 Hex Inverter Gate function table 74LS240-74HC240 MC14049 IC 74LS04 NOT gate AN1102-D AN1102 motorola CMOS IC 4069UB
1999 - IRF130

Abstract:
Text: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note The SPICE II , a power MOSFET 's internal capacitances change with bias conditions, the presence of a cascode JFET , affects operation in the third quadrant. Without this information, SPICE II will predict power MOSFET , within the SPICE II software, so as to form a true, equivalent circuit of a power MOSFET , is the answer , terminal characteristics of a power MOSFET . Parameters of the subcircuit model can be determined from


Original
PDF
2011 - diode d502

Abstract:
Text: . . . . . . 14 3.1 Power MOSFET turn-off compensation . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . 7 Effect of parasitic elements on power MOSFET turn-off. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Effect of parasitic elements on power MOSFET turn-on. . . . . . . . , MOSFET drain voltage level. Because each power MOSFET is turned on when its body diode is conducting , current ISR1 starts flowing through the body diode, the voltage across the power MOSFET drain-source


Original
PDF AN3303 SRK2000 EVLSRK2000 SRK2000 diode d502 diode Schottky D501
2007 - 152.01

Abstract:
Text: turn on the Power MOSFET and charge the load capacitor. EF SUFFIX (Pb-Free) 98ASB42564B 8-PIN SOICN , limits the peak power dissipation in the Power MOSFET . Both current limits are user programmable. Features · Integrated Power MOSFET and Control IC in a Small Outline Package · Input Voltage Operation , integrated - 48 V hot swap controller with an internal Power MOSFET . It provides the means to safely install , Detection Programmable Current Limit Gate Control Driver ICHG Sensor MOSFET VIN Power MOSFET


Original
PDF MC34653 98ASB42564B 152.01 MC34653EF MC34653 JESD51-7 JESD51-3 JESD51-2 G38-87 emosfet design of mosfet based power supply all mosfet power
MOSFET TOSHIBA 2SK

Abstract:
Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1 , changes 43 2: N-ch 2 chip A: MOSFET /SBD chip [ 3 ] Power MOSFET in Detail 2. Construction , switching devices. 2.1 Power MOSFET Construction Power MOSFETs are classified into three major types , power . In addition, the cascade connection of a power MOSFET and a junction FET makes it possible to reduce the reverse transfer capacitance of the power MOSFET . 44 [ 3 ] Power MOSFET in Detail High


Original
PDF
transistor 2sk

Abstract:
Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1 , changes 37 2: N-ch 2 chip A: MOSFET /SBD chip [ 3 ] Power MOSFET in Detail 2. Construction , switching devices. 2.1 Power MOSFET Construction Power MOSFETs are classified into three major types , power . In addition, the cascade connection of a power MOSFET and a junction FET makes it possible to reduce the reverse transfer capacitance of the power MOSFET . 38 [ 3 ] Power MOSFET in Detail High


Original
PDF
IXAN0065

Abstract:
Text: IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 IXYS , conditions to another. Power MOSFET generally contains a body diode, which provides "free wheeling , P-Channel Power MOSFET . Figure 1: (a) an N-Channel (b) a P-Channel Enhancement-Mode Power MOSFET1 , electrical parameters of Power MOSFET , for example, at very low temperature (< -55oC), the device can loss , Dissipation PD 1 IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation


Original
PDF IXAN0065 IXTH/IXTQ130N10T" IXAN0065 IXTQ130N10T mosfet ixys
2001 - Power MOSFET Switching Waveforms A New Insight

Abstract:
Text: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note Title N86 bt pic-Up , a power MOSFET 's internal capacitances change with bias conditions, the presence of a cascode JFET , affects operation in the third quadrant. Without this information, SPICE II will predict power MOSFET , within the SPICE II software, so as to form a true, equivalent circuit of a power MOSFET , is the answer , terminal characteristics of a power MOSFET . Parameters of the subcircuit model can be determined from


Original
PDF
Si9910

Abstract:
Text: AN705 Vishay Siliconix Si9910 Adaptive Power MOSFET Driver Improves Performance in High-Voltage Half-Bridge Applications The Si9910 is the first of a new generation of "adaptive" power MOSFET gate drivers. These adaptive drivers provide protection for the power MOSFET switching element while , Si9910 monitors the power MOSFET 's operating conditions through feedback loops and alters its output , penalties. The Si9910, however, prevents power MOSFET destruction under worst-case operating conditions


Original
PDF AN705 Si9910 15-Feb-94 Si9910DY Si9910DJ motor forward reverse diagram schematic diagram motor mosfet triggering circuit VN50300T HIGH-VOLTAGE HALF BRIDGE DRIVER FLYBACK CLAMPING DIODE fast recovering diodes for spike protection AN705
2000 - all mosfet equivalent book

Abstract:
Text: totem pole system. · Power MOSFET can be directly driven. (output peak current: ±1 A maximum) · Small , directly driving the power MOSFET . It uses the totem pole type output. The maximum rating of the output , resistor, the IC starts operation. Then the power MOSFET driving starts. Thereby, bias is generated in , The oscillation circuit generates the pulse signal for turning on/off the power MOSFET by using charge , the power MOSFET is turned off. At the same time, the C3 is rapidly discharged by the discharge


Original
PDF AN8026 AN8026 all mosfet equivalent book SIP009-P-0000C
2013 - DIODE B13

Abstract:
Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3 , Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by , Power MOSFET Thermal Performance Symbol IPAK/DPAK ITO-220 TO-220 Thermal Resistance - , Temperature 1.8 - uC 2/12 A Version: B13 TSM3N90 900V N-Channel Power MOSFET Gate , Waveform 3/12 Version: B13 TSM3N90 900V N-Channel Power MOSFET Diode Reverse Recovery Time Test


Original
PDF TSM3N90 O-220 ITO-220 O-251 O-252 DIODE B13
2014 - Not Available

Abstract:
Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3 , Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced , Circuit & Waveform 3/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET , Source-Drain Diode Forward Voltage 5/12 Version: C13 TSM3N90 900V N-Channel Power MOSFET Electrical


Original
PDF TSM3N90 O-220 ITO-220 O-251 O-252
AN8026

Abstract:
Text: block employs the totem pole system. · Power MOSFET can be directly driven. (output peak current: ±1 A , VCC TON 4 9 VOUT: Output terminal for directly driving the power MOSFET . It uses , resistor, the IC starts operation. Then the power MOSFET driving starts. Thereby, bias is generated in , The oscillation circuit generates the pulse signal for turning on/off the power MOSFET by using charge , the power MOSFET is turned off. At the same time, the C3 is rapidly discharged by the discharge


Original
PDF AN8026 AN8026 SIP009-P-0000C
IRU1239SC

Abstract:
Text: -220 500V Single N-Channel HEXFET Power MOSFET in a 15 MTP package 15 500V 19.000A MTP 15 500V 19.000A


Original
PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
2005 - Not Available

Abstract:
Text: TPD7100F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7100F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective and , . Features The large-current charge pump allows for fast switching Power MOSFET protective and diagnostic , a voltage clamping circuit. External power MOSFET gate drive pin for ch1: This pin controls the external power MOSFET . Also, when overcurrent flows in the external power MOSFET , it shuts down the gate


Original
PDF TPD7100F TPD7100F
2006 - Application Report mosfet diagram

Abstract:
Text: TPD7101F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7101F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective and , . Features The large-current charge pump allows for fast switching Power MOSFET protective and diagnostic , VGS1 External power MOSFET gate drive pin for ch1: This pin controls the external power MOSFET . Also, when overcurrent flows in the external power MOSFET , it shuts down the gate and is latched. It is


Original
PDF TPD7101F TPD7101F Application Report mosfet diagram
2009 - AN10273

Abstract:
Text: AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Rev. 02 - 27 March 2009 Application note Document information Info Content Keywords Power MOSFET , quantification method for the safe operating condition. AN10273 NXP Semiconductors Power MOSFET , 2009 2 of 13 AN10273 NXP Semiconductors Power MOSFET single-shot/repetitive avalanche , and have inevitably increased the demand for an intrinsically rugged power MOSFET . Device ruggedness


Original
PDF AN10273 AN10273 681688 AN10 BUK764R0-55B
2003 - Power MOSFET, toshiba

Abstract:
Text: Power MOSFET Power MOSFETs - Middle & High Voltage Series (VDSS100V) - Aug. 2003 Toshiba , . 1 Power MOSFET Middle & High Voltage Power MOSFET 1) -MOS (Trench Gate Power MOSFET ) series , series DP0530019_01 2 Power MOSFET Trend of High Speed and High Voltage Power MOSFETs R D S , MOS V Series - MOS V MACH II Series DP0530019_01 3 Power MOSFET AC-DC Converter , ) Power Management 1 Low ON Resistance Trench P-channel MOSFET (Low ON Resistance U-MOSIV) Voltage


Original
PDF VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 2sk3561 4502 mosfet HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK3742 2SK2842 design new high speed mosfet 2SK3567 equivalent
2012 - LTC8205

Abstract:
Text: LTC8205 Dual N-Channel 20V Power MOSFET BVDSS=20V , RDS(ON)=24.5m ID=6A Features: · Super , Typ - Max. 150 Units / W Rev.2, Apr. 2012 LTC8205 Dual N-Channel 20V Power MOSFET , =0V Rev.2, Apr. 2012 LTC8205 Dual N-Channel 20V Power MOSFET Rev.2, Apr. 2012 LTC8205 Dual N-Channel 20V Power MOSFET Rev.2, Apr. 2012 LTC8205 Dual N-Channel 20V Power MOSFET Rev.2, Apr. 2012 LTC8205 Dual N-Channel 20V Power MOSFET Test Circuit and Waveform Rev.2, Apr. 2012


Original
PDF LTC8205 to150 30time LTC8205 ltc8205 A mosfet
2005 - circuit diagram of mosfet based power supply

Abstract:
Text: . This IC is combined with the general purpose Power MOSFET (hereafter called Power MOSFET ) that are , outputs the digital pulse signal for driving Power MOSFET . The Power MOSFET that is driven by this IC , external low pass filter, and sent to the speakers. By using a general purpose Power MOSFET , very low , minimum. MUTE signal brings Power MOSFET into nonconductive state, and mute the output of the device. This IC is configured by two power supply ; 5V for signal processing circuits, and 12V for Power MOSFET


Original
PDF YDA135 W-20W YDA135 20kHz) 150mV 20kHz, circuit diagram of mosfet based power supply all mosfet power amplifier 20V P-Channel Power MOSFET high power mosfet transistor mosfet power supply CONSTANT DC CURRENT POWER SUPPLY Yamaha YDA "Power MOSFET" all mosfet power IGNITION COIL yamaha
2007 - TPD7101F

Abstract:
Text: TPD7101F 2 channel High-Side N-ch Power MOSFET Gate Driver The TPD7101F is a 2 channel high-side N-ch power MOSFET gate driver. This IC contains a power MOSFET driver and power MOSFET protective and , . Features The large-current charge pump allows for fast switching Power MOSFET protective and diagnostic , VGS1 External power MOSFET gate drive pin for ch1: This pin controls the external power MOSFET . Also, when overcurrent flows in the external power MOSFET , it shuts down the gate and is latched. It is


Original
PDF TPD7101F TPD7101F
2010 - LTP*70n06p

Abstract:
Text: LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide , LTP70N06P N-Channel 60V Power MOSFET Electrical Characteristics (TA =25 Unless Otherwise Specified , Power MOSFET Rev 1. Oct. 2010 03 LTP70N06P N-Channel 60V Power MOSFET Rev 1. Oct. 2010 04 LTP70N06P N-Channel 60V Power MOSFET Rev 1. Oct. 2010 05 LTP70N06P N-Channel 60V Power MOSFET Test Circuit and Waveform Rev 1. Oct. 2010 06 LTP70N06P N-Channel 60V Power MOSFET Package


Original
PDF LTP70N06P LTP*70n06p LTP70N06P LTP70N06 LTP70N specifications of power mosfet
AN705

Abstract:
Text: a new generation of "adaptive" power MOSFET gate drivers. These adaptive drivers provide protection for the power MOSFET switching element while allowing direct control of high-voltage switching from logic signals. To achieve this protection, the Si9910 monitors the power MOSFET 's operating conditions , conditions with considerable performance and efficiency penalties. The Si9910, however, prevents power MOSFET , current of 1 pA (with the output high and the power MOSFET turned on), while the emitterfollower output


OCR Scan
PDF AN705_ Si9910 15-Feb-94 AN705 9910DJ 9910DY 9910DY AN705 SI9910DY
Supplyframe Tracking Pixel