PMBFJ176 |
|
NXP Semiconductors
|
PMBFJ176 - P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 2 to 35 mA; IDSS max.: 35 mA; IDSS min.: 2 mA; IG: 50 mA; IG: 50 ; RDS(on): 250 Ohm; toff: 35 ns; toff: 35 ns; ton: 35 ns; ton: 35 ns; -V(P)GS: 1 to 4 V; -V(P)GS MAX: 4 V; -V(P)GS MIN: 1 V; VDSmax: 30 V |
|
Original |
PDF
|
PMBFJ176 |
|
Philips Semiconductors
|
P-Channel Silicon Field-Effect Transistor |
|
Original |
PDF
|
PMBFJ176 |
|
Philips Semiconductors
|
P-Channel Silicon Field-Effect Transistor |
|
Original |
PDF
|
PMBFJ176,215 |
|
NXP Semiconductors
|
P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 2 to 35 mA; IDSS max.: 35 mA; IDSS min.: 2 mA; IG: 50 mA; IG: 50 ; RDS(on): 250 Ohm; toff: 35 ns; toff: 35 ns; ton: 35 ns; ton: 35 ns; -V(P)GS: 1 to 4 V; -V(P)GS MAX: 4 V; -V(P)GS MIN: 1 V; VDSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
|
Original |
PDF
|
PMBFJ176,215 |
|
NXP Semiconductors
|
PMBFJ176 - TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SOT-23, 3 PIN, FET General Purpose Small Signal |
|
Original |
PDF
|
PMBFJ176T/R |
|
NXP Semiconductors
|
P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 2 to 35 mA; IDSS max.: 35 mA; IDSS min.: 2 mA; IG: 50 mA; IG: 50 ; RDS(on): 250 Ohm; toff: 35 ns; toff: 35 ns; ton: 35 ns; ton: 35 ns; -V(P)GS: 1 to 4 V; -V(P)GS MAX: 4 V; -V(P)GS MIN: 1 V; VDSmax: 30 V |
|
Original |
PDF
|
PMBFJ176T/R |
|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
|
Scan |
PDF
|