The Datasheet Archive

Top Results (4)

Part Manufacturer Description Datasheet Download Buy Part
IXUV170N075S IXYS Corporation MOSFET N-CH 75V 170A PLUS220-S
IXTV96N25T IXYS Corporation Power Field-Effect Transistor, 96A I(D), 250V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN
IXFV20N80P IXYS Corporation Power Field-Effect Transistor, 20A I(D), 800V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN
IXFV16N80P IXYS Corporation Power Field-Effect Transistor, 16A I(D), 800V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN

PLUS220 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - 36n50P

Abstract: PLUS220SMD V36N50P
Text: BSC .170 242 .216 BSC PLUS220 (IXTV) Outline E E1 A A1 L2 PLUS220SMD (IXTV.S , temperature for soldering for 10s Md Mounting torque(TO-247) FC Mounting force ( PLUS220 ) Weight TO-247 TO-268 PLUS220 TO-3P 20.120/4.5.15 N/lb 6 5 2 5.5 g g g g , All rights reserved TO-268 (IXTT) G S D (TAB) PLUS220 (IXTV) 1.13/10 Nm/lb.in , µA µA 170 m G D D (TAB) S PLUS220 SMD(IXTV.S) G S G = Gate S = Source D


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PDF 36N50P 36N50PS O-247 PLUS220 PLUS220SMD 36n50P PLUS220SMD V36N50P
2006 - 5007a

Abstract: No abstract text available
Text: .144 0.232 0.252 .170 .216 PLUS220 (IXTV) Outline PLUS220SMD (IXFV_S) Outline © 2006 IXYS All , -268 (IXTT) G S D (TAB) PLUS220 (IXTV) G D 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P&TO-247) Mounting force ( PLUS220 ) TO-3P TO-247 TO-268 PLUS220 & PLUS220SMD 300 260 S D (TAB) PLUS220SMD (IXTV_S) 1.13/10 Nm/lb.in. 11.65/2.5.15 5.5 6.0 5.0 , 27 24 TO-3P, PLUS220 & TO-247 0.21 ° C/W Source-Drain Diode Symbol IS ISM VSD trr QRM


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PDF 26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a
1262-33

Abstract: IXTP44N10T IXTP98N075T IXTQ130N10T ixtp76n075 IXTA60N10T IXTH200N10T IXTP64N055T IXTP152N085T IXTP240N055T
Text: ISOPLUS220 TO-247 TO-220 TO-3P ISOPLUS220 ISOPLUS i4-Pak TO-247 TO-3P PLUS220 PLUS220SMD ISOPLUS , -Lead D2-Pak ISOPLUS220 TO-247 TO-220 TO-3P ISOPLUS220 ISOPLUS i4-Pak TO-247 TO-3P PLUS220 PLUS220SMD , -220 TO-3P ISOPLUS220 ISOPLUS i4-Pak TO-247 TO-3P PLUS220 PLUS220SMD ISOPLUS i5-Pak 33 33 49 , -247 SOT-227B TO-3P PLUS220 PLUS220SMD ISOPLUS i5-Pak P R O D U C T S E L , UL recognized isolated ISOPLUSTM packages TO-247 PLUS220 ISOPLUS220TM PLUS220SMD


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PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTP98N075T IXTQ130N10T ixtp76n075 IXTA60N10T IXTH200N10T IXTP64N055T IXTP152N085T IXTP240N055T
2006 - 36n50P

Abstract: 36N50 IXTH36N50P 4515 n IXTV36N50P QG SMD TRANS IXTQ36N50P 36n50P equivalent FS25 PLUS220SMD
Text: .216 BSC PLUS220 (IXTV) Outline © 2006 IXYS All rights reserved PLUS220SMD (IXTV_S) Outline , case for 10 s Plastic body for 10 s Md Mounting torque(TO-247) FC Mounting force ( PLUS220 ) Weight TO-247 TO-268 PLUS220 TO-3P V V D (TAB) S TO-247 (IXTH) (TAB) TO-268 (IXTT) G S D (TAB) PLUS220 (IXTV) 1.13/10 Nm/lb.in. 20.120/4.5.15 N/lb 6 5 2 , PLUS220 SMD(IXTV.S) G G = Gate S = Source S D (TAB) D = Drain TAB = Drain Features l


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PDF 36N50P 36N50PS O-247 O-268 PLUS220 PLUS220SMD 36n50P 36N50 IXTH36N50P 4515 n IXTV36N50P QG SMD TRANS IXTQ36N50P 36n50P equivalent FS25 PLUS220SMD
2008 - 52N30P

Abstract: IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30
Text: Plastic body for 10s 260 Mounting torque (TO-247) 1.13/10 Mounting force ( PLUS220 ) 11.65/2.5.14.6 N/lb. Weight PLUS220 & PLUS220SMD TO-247 4 6 g g G S D (TAB) TO-247 (IXFH) Nm/lb.in. FC PLUS220SMD (IXFV_S) °C Md D (TAB) °C TSOLD G D S D , 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150 , 3490 Ciss Coss nC 0.31 °C/W RthJC RthCS (TO-247, PLUS220 ) 0.25 Source-Drain Diode


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PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220SMD 52N30
2008 - f12n10

Abstract: 12n100p PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v
Text: 1.05 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25 , TJ TJM 150 -55 . +150 D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) TO-247 (IXFH , Mounting force ( PLUS220 ) 11.65/2.5.14.6 N/lb. Weight TO-247 PLUS220 types 6 4 g g , = 1MHz S 4080 Crss 8.8 1.9 Ciss Coss nC 0.27 °C/W RthJC RthCS PLUS220 (IXFV) Outline (TO-247, PLUS220 ) 0.21 Source-Drain Diode TJ = 25°C unless otherwise specified


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PDF IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 150GS 12N100P 1-08-A f12n10 PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v
2008 - f12n10

Abstract: 12n100p f12n
Text: = = 1000V 12A 1.05 300ns PLUS220 (IXFV) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR , S D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) TO-247 (IXFH) D (TAB) Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) Mounting force ( PLUS220 ) TO-247 PLUS220 types 300 260 1.13/10 11.65/2.5.14.6 6 4 G = Gate S = Source Features z z z D = Drain , Qg(on) Qgs Qgd RthJC RthCS (TO-247, PLUS220 ) 0.21 VGS = 10V, VDS = 0.5 · VDSS, ID = 0.5 · ID25


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PDF IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD 12N100P f12n10 f12n
2006 - IXTH26N60P

Abstract: IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS PLUS220SMD
Text: ( PLUS220 ) Weight TO-3P TO-247 TO-268 PLUS220 & PLUS220SMD g g g g Characteristic Values , .216 PLUS220 (IXTV) Outline © 2006 IXYS All rights reserved PLUS220SMD (IXFV_S) Outline TO , D (TAB) S PLUS220SMD (IXTV_S) N/lb 5.5 6.0 5.0 4.0 TJ = 125°C G 1.13/10 Nm/lb.in. 11.65/2.5.15 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) PLUS220 , ID25 Qgd 0.27 °C/W RthJC RthCS TO-3P, PLUS220 & TO-247 Source-Drain Diode °C/W


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PDF IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS O-247 IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS PLUS220SMD
2008 - 18n90

Abstract: ixfh18n90 B1 9A IXFV18N90P IXFH18N90P IXFV18N90PS PLUS220SMD
Text: = = 900V 18A 600m 300ns PLUS220 (IXFV) Symbol Test Conditions Maximum , ) °C Tstg PLUS220SMD (IXFV_S) °C TL Maximum lead temperature for soldering 300 , . FC Mounting force ( PLUS220 ) 11.65/2.5.14.6 N/lb. Weight TO-247 PLUS220 types 6 , 10 1.2 Ciss Coss nC 0.23 °C/W RthJC RthCS PLUS220 (IXFV) Outline (TO-247, PLUS220 , 300s; duty cycle, d 2%. PLUS220SMD (IXFV_S) Outline e Dim. PRELIMINARY TECHNICAL INFORMATION


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PDF IXFH18N90P IXFV18N90P IXFV18N90PS 300ns PLUS220 18N90P 18n90 ixfh18n90 B1 9A IXFV18N90P IXFH18N90P IXFV18N90PS PLUS220SMD
2013 - Not Available

Abstract: No abstract text available
Text: Nm/lb.in FC Mounting Force ( PLUS220 ) 11.65/2.5.14.6 PLUS220 & PLUS220SMD TO-247 4 , 52A 73m  200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to , = Drain Tab = Drain N/lb Weight PLUS220SMD (IXFV_S) Features    ï , -247 & PLUS220 ) 0.25 Source-Drain Diode TJ = 25C Unless Otherwise Specified) IS ISM VSD QRM , 3 = Source 0.31 C/W RthJC RthCS PLUS220 (IXFV) Outline 52 A Repetitive, pulse


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PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 IXFH52N30P 52N30P
2008 - IXFH12N90P

Abstract: No abstract text available
Text: = = ≤ ≤ 900V 12A 900mΩ Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions , TC = 25°C 380 W -55 . +150 °C TJ D S D (TAB) PLUS220SMD (IXFV_S) G S , torque (TO-247) 1.13/10 Nm/lb.in. FC Mounting force ( PLUS220 ) 11.65/2.5.14.6 N/lb. Weight TO-247 PLUS220 types 6 4 g g D (TAB) G = Gate S = Source D = Drain TAB = , RthJC RthCS PLUS220 (IXFV) Outline (TO-247, PLUS220 ) 0.25 Source-Drain Diode TJ = 25Â


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PDF IXFH12N90P IXFV12N90P IXFV12N90PS 300ns PLUS220 12N90P IXFH12N90P
2009 - IXFH18N90P

Abstract: ixfh18n90 IXFV18N90P IXFV18N90PS PLUS220SMD 18n90
Text: Mounting Torque (TO-247) 1.13/10 Nm/lb.in. FC Mounting Force ( PLUS220 ) 11.65/2.5.14.6 N/lb. Weight TO-247 TO-268 PLUS220 types 6 4 4 g g g D (TAB) PLUS220SMD (IXFV_S , -55 . +150 150 -55 . +150 D (TAB) PLUS220 (IXFV) G D S °C TJ TL , -247, PLUS220 ) 0.25 °C/W Source-Drain Diode Characteristic Values Min. Typ. Max. TJ = 25 , -247 (IXFH) Outline PLUS220 (IXFV) Outline E E1 A A1 L2 E1 D1 D P 1 2 L3 3


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PDF IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS 300ns O-247 O-268 PLUS220SMD 18N90P IXFH18N90P ixfh18n90 IXFV18N90P IXFV18N90PS PLUS220SMD 18n90
2011 - IXFH12N100P

Abstract: 12n100p f12n10
Text: 300ns PLUS220 (IXFV) G D S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dv/dt , 150 -55 . +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g PLUS220SMD (IXFV_S , -247) Mounting Force ( PLUS220 ) TO-247 PLUS220 types 300 260 1.13/10 11.65/2.5.14.6 6 4 Features z z z z , Qg(on) Qgs Qgd RthJC RthCS (TO-247& PLUS220 ) 0.25 VGS = 10V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 , PLUS220 Outline Source-Drain Diode TJ = 25°C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS =


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PDF IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD O-247 12N100P 1-08-A f12n10
2006 - 26n50

Abstract: IXFH .26n50 PLUS220SMD
Text: torque (TO-247) FC Mounting force ( PLUS220 ) Weight TO-247 PLUS220 & PLUS220SMD , (TAB) S PLUS220SMD (IXFV_S) G N/lb Characteristic Values Min. Typ. Max. V 5.5 V ±100 TJ = 125° C PLUS220 (IXFV) 1.13/10 Nm/lb.in. 6 5 Symbol Test Conditions (TJ = 25 , 0.5 ID25 Qgd 0.31 ° C/W RthJC RthCS (TO-247, PLUS220 ) ° C/W 0.21 Source-Drain , 200 ns QRM IRM VR = 100V, VGS = 0 V Millimeter Min. Max. 0.6 6 PLUS220 (IXFV


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PDF 26N50P 26N50PS 26n50 IXFH .26n50 PLUS220SMD
2006 - QG SMD TRANS

Abstract: 30N60P 30n60 PLUS220SMD t30n60p
Text: IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to , Md FC Mounting torque Mounting force Weight TO-247 TO-268 PLUS220 (TO-247) ( PLUS220 , rights reserved S D (TAB) PLUS220 SMD (IXFV.S) G D (TAB) S TO-247 (IXFH) G D , ID25 Qgd 0.25 ° C/W RthJC RthCS TO-247, PLUS220 ° C/W 0.21 Source-Drain Diode , TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. PLUS220 (IXFV) Outline


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PDF 30N60P 30N60PS PLUS220 30N60P O-247 QG SMD TRANS 30n60 PLUS220SMD t30n60p
2008 - Not Available

Abstract: No abstract text available
Text: Mounting force ( PLUS220 ) 11.65/2.5.14.6 N/lb. Weight PLUS220 & PLUS220SMD TO-247 4 6 g g G S D (TAB) TO-247 (IXFH) D (TAB) Nm/lb.in. FC PLUS220SMD (IXFV_S) °C , 74A 34mΩ Ω 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ , RthJC RthCS (TO-247, PLUS220 ) 0.25 Source-Drain Diode TJ = 25°C unless otherwise specified , PLUS220 (IXFV) Outline 74 A Repetitive, pulse width limited by TJM 180 A IF = IS, VGS =


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PDF IXFV74N20P IXFV74N20PS IXFH74N20P 200ns PLUS220 74N20P 6-15-05-D IXFH74N20P
2008 - Not Available

Abstract: No abstract text available
Text: Mounting force ( PLUS220 ) 11.65/2.5.14.6 N/lb. Weight PLUS220 & PLUS220SMD TO-247 4 6 g g G S D (TAB) TO-247 (IXFH) Nm/lb.in. FC PLUS220SMD (IXFV_S) °C Md D , 52A 66mΩ Ω 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ , °C/W RthJC RthCS (TO-247, PLUS220 ) 0.25 Source-Drain Diode TJ = 25°C unless otherwise , PLUS220 (IXFV) Outline 52 A Repetitive, pulse width limited by TJM 150 A IF = IS, VGS =


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PDF IXFV52N30P IXFV52N30PS IXFH52N30P 200ns PLUS220 100ms 52N30P 3-14-06-C IXFH52N30P
2011 - Not Available

Abstract: No abstract text available
Text: ‰¤ 1000V 12A 1.05Ω Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings , VDGR D TJ PLUS220SMD (IXFV_S) TL Maximum Lead Temperature for Soldering 300 , Mounting Force ( PLUS220 ) 11.65/2.5.14.6 N/lb. Weight TO-247 PLUS220 types 6 4 g g , PLUS220 Outline (TO-247& PLUS220 ) 0.25 Source-Drain Diode TJ = 25°C Unless Otherwise Specified , : 1 - Gate 3 - Source PLUS220SMD Outline Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2


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PDF IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 12N100P 1-08-A
2009 - IXTQ22N50P

Abstract: 22N50 IXTH22N50P ixtq-22n50p IXTV22N50P IXTV22N50PS PLUS220SMD
Text: IXTV22N50PS PLUS220 (IXFV) Outline PLUS220SMD (IXFV_S) Outline TO-3P (IXTQ) Outline Pins: 1 - , Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXTV) VDSS ID25 RDS(on) trr G D (TAB) S 500V 22A 270m 200ns TO-247 (IXTH) PLUS220SMD (IXTV_S) G D S = = D , Mounting Torque (TO-247 & TO-3P) FC Mounting Force ( PLUS220 ) Weight TO-247 TO-3P PLUS 220 , ID25 Qgd 0.35 °C/W RthJC RthCS (TO-247, PLUS220 & TO-3P) °C/W 0.25 Source-Drain


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PDF IXTH22N50P IXTQ22N50P IXTV22N50P IXTV22N50PS PLUS220 200ns O-247 PLUS220SMD IXTH22N50P IXTQ22N50P 22N50 ixtq-22n50p IXTV22N50P IXTV22N50PS PLUS220SMD
2006 - Not Available

Abstract: No abstract text available
Text: 30N60P IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 , G D D (TAB) S PLUS220 SMD (IXFV.S) G D (TAB) S TO-247 (IXFH) TJ â , -268 PLUS220 (TO-247) ( PLUS220 ) g g g Symbol Test Conditions (TJ = 25° C, unless otherwise , RthCS 0.25 ° C/W TO-247, PLUS220 0.21 Source-Drain Diode ° C/W Characteristic Values , Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. PLUS220 (IXFV) Outline Millimeter


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PDF 30N60P 30N60PS PLUS220 30N60P O-247
2006 - 30N50P

Abstract: 30N50 PLUS220SMD IXTH30N50P to-3p mounting IXTQ30N50P
Text: torque (TO-247, TO-3P) Mounting force ( PLUS220 , PLUS220SMD ) Weight PLUS220 , PLUS220SMD TO-268 TO , TJ = 125° C 165 nA µA µA 200 m (TAB) S TO-268 (IXTT) G S (TAB) PLUS220 (IXTV) G D S (TAB) PLUS220 SMD(IXTV.S) G G = Gate S = Source 500 VGS(th) D , ID25 Qgs Qgd RthJC 0.27° C/W RthCS (TO-247, TO-3P and PLUS220 ) Source-Drain Diode ° , 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220 (IXTV) Outline


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PDF 30N50P 30N50PS O-247 30N50P O-247 PLUS220 30N50 PLUS220SMD IXTH30N50P to-3p mounting IXTQ30N50P
2008 - ixfh12n90p

Abstract: PLUS220SMD
Text: = = 900V 12A 900m 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum , -55 . +150 °C TJ TJM 150 -55 . +150 S D (TAB) PLUS220SMD (IXFV_S) G S D , /lb.in. FC Mounting force ( PLUS220 ) 11.65/2.5.14.6 N/lb. Weight TO-247 PLUS220 types , 8.2 1.7 Ciss Coss nC 0.33 °C/W RthJC RthCS PLUS220 (IXFV) Outline (TO-247, PLUS220 , 300s; duty cycle, d 2%. PLUS220SMD (IXFV_S) Outline e Dim. PRELIMINARY TECHNICAL INFORMATION


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PDF IXFH12N90P IXFV12N90P IXFV12N90PS 300ns PLUS220 12N90P ixfh12n90p PLUS220SMD
2006 - max2678

Abstract: No abstract text available
Text: ) G S D (TAB) PLUS220 (IXFV) G D S D (TAB) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P&TO-247) Mounting force ( PLUS220 ) TO-247 TO-268 PLUS220 & PLUS220SMD 300 260 PLUS220SMD (IXFV.S) 1.13/10 Nm/lb.in. 11.65/2.5.15 6.0 5.0 4.0 N , nC nC nC 0.27 ° C/W ( PLUS220 & TO-247) 0.21 ° C/W gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on , IXFV 26N60P IXFV 26N60PS TO-247 AD (IXFH) Outline TO-268 (IXFT) Outline PLUS220 (IXFV) Outline 1


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PDF 26N60P 26N60PS O-247 O-268 PLUS220 max2678
2006 - 74N20P

Abstract: PLUS220SMD
Text: .216 242 BSC PLUS220 (IXFV) Outline PLUS220SMD (IXFV_S) Outline IXYS MOSFETs and IGBTs are , 480 -55 . +175 175 -55 . +150 °C °C °C 300 260 ( PLUS220 ) 11.65/2.4.11 Md Mounting torque S PLUS220 (IXFV) D N/lb. (TO-247) Weight D (TAB) D (TAB) °C °C , Tstg FC G G TC = 25° C TL TSOLD TO-247 (IXFH) TO-247 PLUS220 1.13/10 Nm/lb.in. 6.0 4.0 g g S PLUS220SMD (IXFV.S) G S G = Gate S = Source D (TAB) D = Drain


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PDF 74N20P 74N20PS 74N20P PLUS220SMD
2008 - Not Available

Abstract: No abstract text available
Text: © Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test , G = Gate S = Source S D (TAB) D = Drain TAB = Drain °C 300 260 PLUS220SMD , ( PLUS220 ) Weight PLUS220 types 11.65 / 2.5.14.6 N/lb. 4 g Features International , /W RthJC RthCH PLUS220 (IXTV) Outline PLUS220 °C/W 0.21 Source-Drain Diode , 205 5.4 VR = 50V PLUS220SMD (IXTV_S) Outline ns nC A Notes: 1. Pulse test, t ≤ 300Î


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PDF IXTV200N10T IXTV200N10TS PLUS220 200N10T 9-30-08-D
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