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2002 - BRX71-03...-50

Abstract: 50/1N6400 50/KBA500 CGS+HSA+50
Text: IMPED. IN/OUT (Ohms) 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50


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A/2Y0A21 F 73

Abstract: No abstract text available
Text: 7.3 73 7.3 7.3 7.3 7.3 7.3 10.0 10.0 10.0 10 0 to o 10 0 H 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 50 5.0 5.0 5.0 50 5.5 5.5 5.5 65 6.5 7.0 8.0 8.0 8.0 9.5 9.5 95 , .3.5 4.0 4.3 4.3 4.8 5.0 5.5 5.8 65 65 75 5 6.5 6.5 7.0 7.0 8.0 P 5.0 5.0 5.0 5.0 5.0 50 50 5.0 50 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 50 5.0 5.0 5.0 50 50 0 0 75 75 75 7.5 7.5 7.5 F 5.0 5.0 5.0 5.0 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0


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PDF 103to335F-5 A/2Y0A21 F 73
2002 - mt3514

Abstract: mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
Text: 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 100 200 300 600 900 1200 0.8 0.8 0.8 0.8 0.8 0.8 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 , 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600


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PDF B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 45osed KBPC5000GS KBPC5001GS KBPC5002GS mt3514 mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
2002 - diode Marking H27

Abstract: 50/Y496
Text: Temperature Coefficient z (%/ C) 50 Zener Voltage Temperature Coefficient z (mV/ C) 500 5mm 2.5 mm , ­0.06 ­0.08 ­0.10 0 5 200 100 ­ 50 10 15 20 25 30 35 40 Zener Voltage VZ (V) 0 0 50 100 150 , 4.4 TEST CURRENT I ZT mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Dynamic Resistance rd (Max) OHMS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 IZ mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0


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PDF J-STD-020C diode Marking H27 50/Y496
2002 - Not Available

Abstract: No abstract text available
Text: 0.10 Zener Voltage Temperature Coefficient z (%/ C) 50 40 30 20 mV/ C 10 0 ­10 ­20 ­30 ­40 0 5 ­ 50 , ­0.10 200 100 0 0 50 100 150 Ambient Temperature Ta ( C) 200 Fig.2 Temperature Coefficient , 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 TEST CURRENT I ZT mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Dynamic Resistance rd (Max) OHMS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 IZ mA 5.0 5.0


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PDF LSH36 LSH16 LSH30 LSH12 LSH20 LSH24
2002 - Zener diode MARKING H5

Abstract: No abstract text available
Text: Temperature Coefficient z (%/ C) 50 Zener Voltage Temperature Coefficient z (mV/ C) 500 5mm 2.5 mm , ­0.06 ­0.08 ­0.10 0 5 200 100 ­ 50 10 15 20 25 30 35 40 Zener Voltage VZ (V) 0 0 50 100 150 , CURRENT I ZT mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Dynamic Resistance rd (Max) OHMS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 IZ mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0


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2003 - mb101

Abstract: No abstract text available
Text: Maximum Forward Voltage @ 25°C TL* IFM A VFM V Package Through Hole Bridge Rectifiers MB05M 50 40 MB1M 100 40 MB2M 200 40 MB4M 400 0.5 40 MB6M 600 40 MB8M 800 40 MB10M 1000 40 DB101 50 40 DB102 100 40 DB103 200 40 DB104 400 40 DB105 600 40 DB106 800 40 DB107 1000 40 1.0 HDB101G 50 40 HDB102G 100 40 HDB103G 200 40 HDB104G 400 40 HDB105G 600 40 HDB106G 800 40 HDB107G 1000 40 RB151 50 25 RB152 100 25 RB153 200 25 RB154 400 25 RB155 600 25 RB156 800 25 RB157 1000 25 W005G 50 50 W01G 100 50 W02G 200 50 1.5


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PDF MB05M MB10M DB101 DB102 DB103 DB104 DB105 DB106 DB107 HDB101G mb101
UF107

Abstract: UF302 diode UF103 UF303 UF307 DIODE HER306 APPLICATION DIODE HER306 DO27 diode her205 UF207
Text: Package time V A °C A µA A V HER101 50 1.0 50 30 5.0 1.0 1.0 50 DO-41 HER102 100 1.0 50 30 5.0 1.0 1.0 50 DO-41 HER103 200 1.0 50 30 5.0 1.0 1.3 50 DO-41 HER104 300 1.0 50 30 5.0 1.0 1.3 50 DO-41 HER105 400 1.0 50 30 5.0 1.0 1.3 50 DO-41 HER106 600 1.0 50 30 5.0 1.0 1.85 70 DO-41 HER107 800 1.0 50 30


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PDF HER101 DO-41 HER102 HER103 HER104 HER10 D0-41 UF107 UF302 diode UF103 UF303 UF307 DIODE HER306 APPLICATION DIODE HER306 DO27 diode her205 UF207
2007 - am1580

Abstract: AU-1433 AM-1358 AU-1467 AM-1607-3000 AU-1350 microwave product catalog AM-1610 AM-1616 AM-1607-2000
Text: amplifiers must be terminated in 50 ohms at all times. SECOND AND THIRD ORDER INTERCEPT POINTS The third , Humidity .Up to 95% at 40° noncondensing Vibration.1.0 ­ 3.0 g's rms, 5 Hz ­ 50 kHz random, basic , duration pulses up to 50 W. AC POWER SUPPLY (100 to 240 VAC, 47 ­ 440 Hz). Add Suffix "-1179" Available as , (in degrees Kelvin) of a 50 termination at the input of an ideal noiseless amplifier with the same , microwave systems are designed around a 50 impedance system. An amplifier's impedance is designed to be as


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2004 - BC548 BH

Abstract: BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
Text: CMPT3904E CMPT4401 80 75 80 40 6.0 6.0 6.0 6.0 6.0 6.0 100 10 10 50 * 50 * 100* 80 60 60 30 30 35 100 100 100 , 5.0 10 10 1.0 1.0 1.0 150 1.0 150 150 10 0.4 1.0 100 500 500 50 50 500 6.0 8.0 8.0 4.0 4.0 6.5 150 300 300 300 300 250 4.0 4.0 5.0 4.0 285 285 250 250 255 100 60 60 60 45 40 40 40 0.5 0.3 , 5.0 5.0 5.0 5.0 100 10 10 50 * 50 * 100* 80 50 50 30 30 35 100 100 100 100 100 100 300 300 300 300 300 300 5.0 10 10 1.0 1.0 2.0 1.0 150 150 10 10 150 0.4 1.6 100 500 500 50 50 500 4.5 8.0 8.0 4.5 4.0 8.5


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PDF OT-23 350mW CMPT8099 CMPT2222A CMPT2222AE CMPT3904 CMPT3904E CMPT4401 BC548 BH BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
2002 - Not Available

Abstract: No abstract text available
Text: ±0.25 pF /±2% /±2% ±2% /±2% 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5 6.5 7.5 8.5 11.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5 7.5 7.5 8.5 , Product information 5.0 5.0 5.0 5.0 5.0 6.5 7.5 8.5 10.0 11.0 12.0 ±0.25 pF ±0.25 pF /±2% /±2% /±2% 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5 7.5 8.5 10.0 12.0 ±0.25 pF /±2% 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5


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PDF N1500
2003 - Not Available

Abstract: No abstract text available
Text: Hole High Efficient Rectifiers HER101S 50 55 HER102S 100 55 HER103S 200 55 HER104S 300 55 HER105S 400 55 HER106S 600 55 HER107S 800 55 HER108S 1000 55 EGP10A 50 55 EGP10B 100 55 EGP10D 200 55 1.0 EGP10F 300 55 EGP10G 400 55 EGP10J 600 55 EGP10K 800 55 HER101 50 55 HER102 100 55 HER103 200 55 HER104 300 55 HER105 400 55 HER106 600 55 HER107 800 55 HER151 50 55 HER152 100 55 HER153 200 55 HER154 300 55 1.5 HER155 400 55 HER156 600 55 HER157 800 55 HER158 1000 55 EGP20A 50 55 EGP20B 100 55 EGP20D 200 55


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PDF HER101S HER102S HER103S HER104S HER105S HER106S HER107S HER108S EGP10A EGP10B
2000 - TZX27B

Abstract: TZX20C TZX10 TZX10A TZX10B TZX10C TZX10D TZX11 TZX36C
Text: ) Max (V) mA W mA V TZX2V4 2.3 2.6 5.0 100 5.0 0.5 TZX2V4A 2.3 2.5 5.0 100 5.0 0.5 TZX2V4B 2.4 2.6 5.0 100 5.0 0.5 TZX2V7 2.5 2.9 5.0 100 5.0 0.5 TZX2V7A 2.5 2.7 5.0 100 5.0 0.5 TZX2V7B 2.6 2.8 5.0 100 5.0 0.5 TZX2V7C 2.7 2.9 5.0 100 5.0 0.5 TZX3V0 2.8 3.2 5.0 100 5.0 0.5 TZX3V0A 2.8 3.0 5.0 100 5.0 0.5 TZX3V0B 2.9


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PDF TZX36C 500mW DO-35, MIL-STD-202, DO-35 TZX30B TZX30C TZX33 TZX33A TZX27B TZX20C TZX10 TZX10A TZX10B TZX10C TZX10D TZX11 TZX36C
equivalent components of diode her207

Abstract: her158 HER1605PT her1603g HER107 HER106 HER105 HER104 HER103 her308
Text: VPK Trr ns 25 25 25 25 25 25 25 25 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.3 1.3 1.7 1.7 1.7 50 50 50 50 50 75 75 75 30 30 30 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.3 1.3 1.7 1.7 1.7 50 50 50 50 50 75 75 75 30 , 1.7 1.7 50 50 50 50 100 100 30 30 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 5.0


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PDF 0ER1602PT HER1603PT HER1604PT HER1605PT HER1606PT HER1607PT HER1608PT ITO-220 UF1600F UF1601F equivalent components of diode her207 her158 HER1605PT her1603g HER107 HER106 HER105 HER104 HER103 her308
2002 - NISSEI

Abstract: No abstract text available
Text: = 10.0 K = kink A = ammo C = 5.0 D = 7.5 Lead spacing (mm) Lead Forming (omit for straight leads , Rated 50Vdc Cap. W H T P F 5.0 270F 6.5 8.5 4.5 3.5 5.0 330F 6.5 8.5 4.5 3.5 5.0 390F 6.5 8.5 4.5 3.5 5.0 470F 6.5 7.0 3.5 3.5 5.0 560F 6.5 7.0 3.5 3.5 5.0 680F 6.5 7.0 3.5 3.5 5.0 820F 6.5 7.0 3.5 3.5 5.0 1000F 6.5 7.0 3.5 3.5 5.0 1200F 6.5 7.0 3.5 3.5 5.0 1500F 6.0 7.0 3.5 3.5 5.0 1800F 6.0 7.0 3.5 3.5 5.0 2200F 6.0 7.0 3.5 3.5 5.0 2700F 6.0 7.0 3.5 3.5 5.0 3300F 6.0 7.0 4.0 3.5 5.0 3900F 6.5 7.0


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PDF 50Vdc, 100Vdc 00--AHS154-100--AHS184-100--AHS224-100--- NISSEI
2011 - CL05B104KO5NNN

Abstract: CL05A104KA5NNN CL05B102KB5NNN CL10C200JB8NNN CL10C270JB8NNN CL21B104KBFNNN CL05B104KP5NNN CL10B102KB8NNN CL05B103KB5NNN CL10C220JB8NNN
Text: ) 0.5 1 10 22 47 100 220 330 470 560 1 2.2 3.3 4.7 6.8 10 22 27 33 47 68 100 120 150 25 0402(1005) 50 25 0603(1608) 50 25 0805(2012) 50 16 1206(3216) 25 50 1210(3225) 1812(4532) 50 2220(5750) 50 43 130 Array Type Capacitors 50 25 Medium-High Voltage Capacitors Super Small Size Capacitors High Capacitance , ) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 , 25 0805(2012) 4 6.3 0.95 10 16 25 0.7 10 6.3 10 1206(3216) 0.95 16 25 50 0.95 16 25 1210(3225) 2.0 35


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2011 - CL10B102KB8NNN

Abstract: CL05B102KB5NNN CL31C560JB CL05A104KQ5NNN CL05A104KA5NNN CL10C300 cl05c090 CL10B104KB8 CL10B471KB8NNN CL21F104ZB
Text: 0.5 1 10 22 47 100 220 330 470 560 1 2.2 3.3 4.7 6.8 10 22 27 33 47 68 100 120 150 25 0402(1005) 50 25 0603(1608) 50 25 0805(2012) 50 16 1206(3216) 25 50 1210(3225) 1812(4532) 50 2220(5750) 50 43nF 130nF Array Type Capacitors 50 25 Medium-High Voltage Capacitors Super Small Size Capacitors High Capacitance , ) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 , 25 0805(2012) 4 6.3 0.95 10 16 25 0.7 10 6.3 10 1206(3216) 0.95 16 25 50 0.95 16 25 1210(3225) 2.0 35


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2007 - Not Available

Abstract: No abstract text available
Text: should be less than 170°C. The time above 217°C should be less than 50 s. The peak temperature must not , 470 nF 0.6 % 1.0 % 2.5 % 200 170 °C 150 °C 160 120 80 40 0 0 30 Min. 30 s, max 50 s above , soldering for GMW parts with up to H = 2 mm. 300 250 200 150 100 90 °C 50 0 0 Temperature (°C) 250 °C, 2s + , +23°C C 100 nF Pulse rise time C/C% 14 12 10 8 6 4 2 0 -2 -4 - 50 -25 1 kHz 10 kHz 100 , multiplied by UR/U. 0.02 0.016 0.012 0.008 0.004 tan 50 100 150 200 250 t(s


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PDF solderTR12 103K400J93 123K400J93 153K400J95 VDC/220 102K630J91 122K630J91 152K630J91 182K630J91 222K630J91
2002 - Not Available

Abstract: No abstract text available
Text: µF 10 000 M 30 000 M 100 50 0 Dissipation factor Max values at +23°C C 100 nF 1 kHz , 10 0 8 -1 tan x 10-3 6 150 Max 130 °C 100 90 °C 50 -2 4 -3 - 50 -25 2 - 50 -25 0 25 50 75 100 125 °C Capacitance vs temperature at 1 kHz 0 0 25 50 75 100 125 °C Dissipation factor vs temperature at 1 kHz 0 50 100 , 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0


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PDF fro00 102K630J91 122K630J91 152K630J91 182K630J91 222K630J91 272K630J91 332K630J93 392K630J93 472K630J95
2005 - nissei capacitor

Abstract: No abstract text available
Text: W 5.2 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.2 5.2 5.0 5.0 5.0 5.0 5.2 5.2 5.2 5.5 5.8 6.0 6.2 6.2 6.7 7.5 8.0 7.2 7.5 8.2 8.5 AMC 50V.dc T H 5.0 3.0 5.0 2.7 5.0 2.5 5.0 2.5 5.0 2.5 5.0 2.5 5.0 2.5 5.0 2.5 5.0 2.5 5.0 2.5 5.0 2.5 5.0 2.7 5.0 2.7 5.0 2.7 5.0 2.7 5.0 2.7 5.0 2.7 5.0 3.0 5.0 3.2 5.5 3.5 5.5 3.8 6.0 3.8 6.0 4.0 6.0 4.0 6.0 4.3 7.0 4.2 7.0 4.3 7.0 4.8 7.0 5.0 Model code"0000" F P 3.5 5.0 3.5 5.0 3.5 5.0 3.5 5.0 3.5 5.0 3.5 5.0 3.5 5.0 3.5 5.0 3.5 5.0 3.5 5.0 3.5 5.0 3.5 5.0 3.5 5.0 3.5


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PDF 00082F 20Min 1000hr nissei capacitor
2008 - Not Available

Abstract: No abstract text available
Text: Preheating temperature should be less than 170°C. The time above 217°C should be less than 50 s. The peak , 80 40 Min. 30 s, max 50 s above 217 °C UR 100 V UR > 100 V 0 0 30 60 90 120 150 , kHz 100 kHz Pulse rise time C/C% 14 12 10 8 6 4 2 0 -2 -4 - 50 -25 0.6 % 1.0 % 2.0 % , H = 2 mm. 300 Temperature (°C) 250 °C, 2s + 3s max 250 200 150 100 90 °C 50 0 0 Recommended preheat , multiplied by UR/U. 0.02 0.016 0.012 0.008 0.004 tan 50 100 150 200 250 t(s) 0 25 50


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PDF solder0J93 472K630J95 562K630J95 682K630J95
2008 - Not Available

Abstract: No abstract text available
Text: Preheating temperature should be less than 170°C. The time above 217°C should be less than 50 s. The peak , 80 40 Min. 30 s, max 50 s above 217 °C UR 100 V UR > 100 V 0 0 30 60 90 120 150 , kHz 100 kHz Pulse rise time C/C% 14 12 10 8 6 4 2 0 -2 -4 - 50 -25 0.6 % 1.0 % 2.0 % , H = 2 mm. 300 Temperature (°C) 250 °C, 2s + 3s max 250 200 150 100 90 °C 50 0 0 Recommended preheat , multiplied by UR/U. 0.02 0.016 0.012 0.008 0.004 tan 50 100 150 200 250 t(s) 0 25 50


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PDF 123K400J93 153K400J95 VDC/220 102K630J91 122K630J91 152K630J91 182K630J91 222K630J91 272K630J91 332K630J93
2008 - 474 m5e

Abstract: MURATA/474 m5e LM3661TL-1.25
Text: ) Solder Coated CP Wire s Dimensions W 3.5 Dimensions (mm) W1 T 5.0 F 2.5 d 0.5 2K1/2M1/2M2 5.0 3.5 5.0 5.0 0.5 3P1/3S1/3S2 5.0 4.5 6.3 2.5 0.5 3K1/3M1/3M2 5.0 4.5 6.3 5.0 0.5 4K1/4M1/4M2 7.5 5.0 7.0 5.0 0.5 5B1/5E1/5E2 7.5 7.5 - 5.0 0.5 6B1/6E1/6E2 10.0 10.0 - 5.0 0.5 7C1 12.5 12.5 - 10.0 0.5 8K1/8M1/8M2 7.5 5.5 8.0 5.0 0.5 TB1/TE1/TE2


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PDF RPEF51H474Z2ppC03p RPEF51H105Z4ppE12p RPEF51H225Z6ppF14p RPEF51H475Z6ppF03p 474 m5e MURATA/474 m5e LM3661TL-1.25
2004 - TR12

Abstract: No abstract text available
Text: temperature must not exceed 230 °C. 250 200 150 100 50 0 90 120 150 180 210 240 270 300 t(s) Max 150 °C Max , 2 mm. 300 250 200 150 100 90 °C 50 0 0 Temperature (°C) 250 °C, 2s + 3s max Dissipation factor , 0 -2 -4 - 50 -25 tan 50 100 150 200 250 t(s) Recommended wave soldering profile 0 25 50 75 100 125 150 175 Temperature °C 0 25 50 75 100 125 150 175 Temperature °C 0 - 50 , J91 J91 J91 J91 J93 J93 J95 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0


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PDF thanK400J93 103K400J93 123K400J93 153K400J95 VDC/220 102K630J91 122K630J91 152K630J91 182K630J91 222K630J91 TR12
2014 - ER5G

Abstract: No abstract text available
Text: MUR140 MUR160 MUR180 MUR1100 50 100 150 200 400 600 800 1000 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 35 35 35 35 35.0 35 35 35 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 , MUR115GP MUR120GP MUR140GP MUR160GP 50 100 150 200 400 600 1.0 1.0 1.0 1.0 1.0 1.0 25 25 25 25 25 25 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 0.970 0.970 , SF12 SF13 SF14 SF15 SF16 SF18 50 100 150 200 300 400 600 1.0 1.0 1.0 1.0 1.0 1.0


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PDF MUR105 MUR110 MUR115 MUR120 MUR140 MUR160 MUR180 MUR1100 ER5G
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