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Part Manufacturer Description Datasheet Download Buy Part
PIC32MX795F512LT-80V/BG Microchip Technology Inc 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PBGA121, 10 X 10 MM, 1.10 MM HEIGHT, LEAD FREE, PLASTIC, XBGA-121
PIC32MX795F512LT-80V/PT Microchip Technology Inc 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PQFP100, 12 X 12 MM, 1 MM HEIGHT, LEAD FREE, PLASTIC, TQFP-100
PIC32MX795F512LT-80V/PF Microchip Technology Inc 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PQFP100, 14 X 14 MM, 1 MM HEIGHT, LEAD FREE, PLASTIC, TQFP-100
PIC32MX795F512LT-I/BG Microchip Technology Inc RISC MICROCONTROLLER
PIC32MX795F512LT-I/PF Microchip Technology Inc RISC MICROCONTROLLER
PIC32MX795F512LT-V/BG Microchip Technology Inc RISC MICROCONTROLLER
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Microchip Technology Inc
PIC32MX795F512LT-80I/PF MCU 32-bit PIC32 PIC RISC 512KB Flash 2.5V/3.3V 100-Pin TQFP T/R (Alt: PIC32MX795F512LT-80I/PF) PIC32MX795F512LT-80I/PF ECAD Model
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Avnet (3) PIC32MX795F512LT-80I/PF Tape and Reel 0 5 Weeks, 3 Days 1,000 - - - €12.01335 €9.37041 More Info
PIC32MX795F512LT-80I/PF Reel 0 10 Weeks 1,000 - - - $9.95739 $8.89594 More Info
PIC32MX795F512LT-80I/PF Tape and Reel 0 5 Weeks 1,000 - - - $10.01429 $8.7625 More Info
Newark element14 (2) PIC32MX795F512LT-80I/PF 0 1,000 $8.5 $8.5 $8.5 $8.5 $8.5 More Info
PIC32MX795F512LT-80I/PF Cut Tape 566 1 $9.94 $9.53 $8.93 $8.93 $8.93 More Info
Allied Electronics & Automation PIC32MX795F512LT-80I/PF Bulk 0 1,000 - - - $11.65 $11.65 More Info
Microchip Technology PIC32MX795F512LT-80I/PF Reel 0 14 Weeks 1,000 $9.94 $9.94 $8.25 $7.59 $7.59 More Info
element14 Asia-Pacific PIC32MX795F512LT-80I/PF 566 1 $15.57 $15.34 $12.92 $12.67 $12.67 More Info
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Farnell element14 (2) PIC32MX795F512LT-80I/PF 566 1 £8.35 £8.23 £6.92 £6.92 £6.92 More Info
PIC32MX795F512LT-80I/PF 0 1 £8.35 £8.23 £6.92 £6.92 £6.92 More Info

PIC32MX795F512LT-80I/PF datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
PIC32MX795F512LT-80I/PF PIC32MX795F512LT-80I/PF ECAD Model Microchip Technology Embedded - Microcontrollers, Integrated Circuits (ICs), IC MCU 32BIT 512KB FLASH 100TQFP Original PDF

PIC32MX795F512LT-80I/PF Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - Not Available

Abstract: No abstract text available
Text: Loss 6dB max. Guaranteed Attenuation 80ï ½„B min. Terminating Impedance 910Ω//4pFã , ±25 Hz max./30dB k 1dB max. 4dB max. 80ï ½„B min. 570Ω//3pF Cc=11pF D46307GQ D50810GQ 4 , ±18 Hz max./40dB k ±20 Hz max./40dB k 1dB max. 1dB max. 5dB max. 5dB max. 80ï ½„B min. 80ï ½„B min. 200Ω//5pF Cc=23pF 560Ω//4pF Cc=9.7pF −20~+70℃ 1000pcs./reel(Ï , . 80ï ½„B min. 450Ω//4pF Cc=9.2pF Consult our sales representative for other specifications. â


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PDF DSF753S DSF753SDF D21406GQ /18dB 45MHzã 50810GQ Rt-50)
2014 - Not Available

Abstract: No abstract text available
Text: 100 20 μA nA 1.5 Ω 17 23 53 23 32 S ns ns ns ns nC nC nC pF pF pF , Duration= 80Î ¼s Duty Cycle = 0.5% Max VGS=5.5V VGS=10V VGS=5.5V 3 2 VGS=4.5V 2 VGS=10V VGS=5.0V Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 3 103 4 VGS=5.0V 4 10 102 , Source on Resistance, rDS (ON) (Ω) Drain to Source Current, IDS (ON) (A) 5 Pulse Duration= 80Î , 0 2 1 0 3 4 5 6 7 10 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 8


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PDF UF830Z UF830ZL-TF3-T UF830ZG-TF3-T QW-R502-612
2007 - Not Available

Abstract: No abstract text available
Text: 0V, f= 1MHZ Q1 Q2 90 70 120 100 pF Q1 Q2 20 30 30 40 pF Q1 Q2 15 15 25 25 pF Q1 Q2 4 6 10 12 ns Q1 Q2 1 16 10 29 ns Q1 Q2 , =1.8V 0.88 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX 0.44 VGS = 1.5V 0.00 0.0 0.5 , 80Î ¼s DUTY CYCLE = 0.5%MAX 0.6 TJ = 125oC 0.4 TJ = 25oC 0.2 -25 0 25 50 , . On-Resistance vs Gate to Source Voltage 2.20 2 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80Î


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PDF FDG8842CZ FDG8842CZ
2005 - Not Available

Abstract: No abstract text available
Text: nC pF pF pF 2 of 8 QW-R502-046,B UF830 MOSFET INTERNAL PACKAGE INDUCTANCE PARAMETER , =10V VGS=4.5V 1 Drain Current, ID (A) Drain Current, ID (A) Pulse Duration = 80Î ¼s Duty Cycle = 0.5% Max 2 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max VGS=10V VGS =5.0V 3 2 VGS , Duration= 80Î ¼s Duty Cycle = 0.5% Max 4 VDS>ID(ON) ×rDS(ON)MAX 3 T J = 125℃ 2 T J = 25℃ T J , ) (Ω) Transfer Characteristics 10 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 8 6 VGS


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PDF UF830 O-220 O-220F UF830L UF830-TA3-T UF830L-TA3-Tat QW-R502-046
2005 - Not Available

Abstract: No abstract text available
Text: ns ns ns ns nC nC nC pF pF pF 17 23 53 23 32 2 QW-R502-046,A UF830 MOSFET , www.unisonic.com.tw DRAIN CURRENT, ID (A) DRAIN CURRENT, ID (A) Pulse Duration = 80Î ¼s Duty Cycle = 0.5% Max , Duration= 80Î ¼s Duty Cycle = 0.5% Max VGS=10V VGS=5.5V VGS =5.0V 3 2 VGS=4.5V 1 0 VGS , DRAIN CURRENT 10 5 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 4 VDS>ID(ON)×rDS(ON)MAX DRAIN , 4 5 6 8 6 VGS=10V 4 VGS=20V 2 0 7 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max


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PDF UF830 O-220 UF830L UF830-TA3-T UF830es QW-R502-046
2014 - Not Available

Abstract: No abstract text available
Text: 250 μA ±100 1.8 nA Ω 900 95 35 4.2 1000 105 45 pF pF pF S 90 100 , Characteristics 1 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max VGS=5.5V VGS=10V VGS=5.5V 3 2 VGS=4.5V 2 VGS=10V VGS=5.0V Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 3 103 4 , Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 4 VDS>ID(ON)×rDS(ON)MAX 3 TJ = 125°C 2 TJ = 25°C 1 TJ = -40°C 0 2 1 0 3 4 5 6 7 10 Pulse Duration= 80Î ¼s Duty


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PDF UF830-E O-220 UF830L-TA3-T UF830G-TA3-T QW-R502-993
2015 - Not Available

Abstract: No abstract text available
Text: inductances as below.  TYP MAX UNIT 22 32 nC 3.5 nC 11 nC 600 pF 100 pF 20 pF MIN , Rectangular Pulse Duration, t1 (s) 0.1 10 Output Characteristics 1 Pulse Duration= 80Î ¼s Duty , =5.0V Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 3 103 4 VGS=5.0V 4 10 102 Drain to Source , „¦) Drain to Source Current, IDS (ON) (A) 5 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 4 VDS>ID(ON , 6 7 10 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 8 6 VGS=10V 4 VGS=20V 2 0


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PDF UF830 UF830L-TA3-T UF830G-TA3-T O-220 UF830L-TF3-T UF830G-TF3-T O-220F UF830L-TF1-T QW-R502-046
2005 - Not Available

Abstract: No abstract text available
Text: S 19 10 9 600 250 80 30 50 50 40 30 ns ns ns ns nC nC nC pF pF pF 2 , CHARACTERISTICS Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max VGS =10V VGS=8V 10 DRAIN TO SOURCE , May be Limited by rDS (on) 1 8 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max VGS =10V VGS , DRAIN CURRENT 10 DRAIN CURRENT, I D (A) Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 8 VDS>ID(ON , =10V 0.6 0.4 VGS=20V 0.2 0 10 0 GATE TO SOURCE VOLTAGE , VGS (V) Pulse Duration = 80Î


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PDF UF630 O-220 UF630L UF630-TA3-T QW-R502-049
2011 - Not Available

Abstract: No abstract text available
Text: 11 nC 600 pF 100 pF 20 pF INTERNAL PACKAGE INDUCTANCE PARAMETER SYMBOL Internal Drain , 1 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max VGS=5.5V VGS=10V VGS=5.5V 3 2 VGS=4.5V 2 VGS=10V VGS=5.0V Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 3 103 4 VGS , Source on Resistance, rDS (ON) (Ω) Drain to Source Current, IDS (ON) (A) 5 Pulse Duration= 80Î , 0 2 1 0 3 4 5 6 7 10 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 8


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PDF UF830 O-220 O-220F O-220F1 O-263 O-220F2 O-262 O-251 O-252 UF830L-Tat
2014 - Not Available

Abstract: No abstract text available
Text: internal devices inductances as below.  TYP MAX UNIT 22 32 nC 3.5 nC 11 nC 600 pF 100 pF 20 pF MIN TYP MAX UNIT 3.5 4.5 nH nH 7.5 nH SOURCE TO DRAIN DIODE , 1 Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max VGS=5.5V VGS=10V VGS=5.5V 3 2 VGS=4.5V 2 VGS=10V VGS=5.0V Pulse Duration= 80Î ¼s Duty Cycle = 0.5% Max 3 103 4 VGS , Duration= 80Î ¼s Duty Cycle = 0.5% Max 4 VDS>ID(ON)×rDS(ON)MAX 3 TJ = 125°C 2 TJ = 25°C 1


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PDF UF830 O-220 O-220F1 O-220F2 O-252 O-251 O-262 O-220F O-263 QW-R502-046
2013 - Not Available

Abstract: No abstract text available
Text: 250 nC nC pF pF pF nH 4.5 nH 7.5 Measured From Modified MOSFET the Contact Screw , ) Drain Current, ID (A) 100μs 10 PULSE DURATION= 80Î ¼S DUTY CYCLE = 0.5% MAX VGS = 10V VGS = , Drain to Source Current, IDS (ON) (A) 15 PULSE DURATION= 80Î ¼S 0 200 160 120 PULSE DURATION= 80Î ¼S DUTY CYCLE = 0.5% MAX VDS≥50V 10 TJ = 25℃ TJ = 150℃ 1 0.1 0 4 2 , 2500 ID=250μA 1.15 Capacitance, C ( pF ) Normalized Drain to Source Breakdown Voltage


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PDF UF740 O-220F1 O-220F2 O-220F O-220 O-263 QW-R502-078.
2014 - Not Available

Abstract: No abstract text available
Text: pF 756 pF 48 pF  nC nC 16 nC 7.7 nC Switching Characteristics ton , Figure 8. Forward Diode Characteristics 300 300 80ï ­s PULSE WIDTH Tj=25oC 250 200 150 ID , Application Notes AN7514 and AN7515 PULSE DURATION = 80ï ­s DUTY CYCLE = 0.5% MAX 250 STARTING TJ = , 7V 6V 5.5V 5V Bottom 5V 60 0 0 80ï ­s PULSE WIDTH Tj=175oC 0 1 2 3 4 VDS , ON-RESISTANCE (m) ID = 80A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 PULSE DURATION = 80ï


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PDF FDD9409 O-252 O-252)
2011 - Not Available

Abstract: No abstract text available
Text: Q1 VDS = 20V, VGS = 0V, f = 1MHZ Q1 Q2 750 1000 1000 1330 pF Q1 Q2 115 140 155 185 pF Q1 Q2 75 75 115 115 pF Q1 Q2 1.1 3.3 Q1 Q2 7 7 14 14 , 10V PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX 40 VGS = 4.5V 30 VGS = 3.5V 20 10 , 80Î ¼s DUTY CYCLE = 0.5%MAX TJ = 125oC 30 TJ = 25oC 20 10 100 125 150 2 TJ , 60 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX IS, REVERSE DRAIN CURRENT (A) ID, DRAIN


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PDF FDD8424H F085A
2008 - FDD8424

Abstract: No abstract text available
Text: 1MHZ Q1 Q2 750 1000 1000 1330 pF Q1 Q2 115 140 155 185 pF Q1 Q2 75 75 115 115 pF Q1 Q2 1.1 3.3 Q1 Q2 7 7 14 14 ns Q1 Q2 13 3 24 , 80Î ¼s DUTY CYCLE = 0.5%MAX 40 VGS = 4.5V 30 VGS = 3.5V 20 10 VGS = 3.0V 0 0 1 , „¦) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 9A 1.2 60 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5 , Temperature Figure 4. On-Resistance vs Gate to Source Voltage 60 60 PULSE DURATION = 80Î ¼s DUTY


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PDF FDD8424H FDD8424
2011 - FDS8858

Abstract: No abstract text available
Text: VDS = 15V, VGS = 0V, f = 1MHZ Q1 Q2 905 1675 1205 2230 pF Q1 Q2 180 290 240 390 pF Q1 Q2 110 260 165 390 pF Q1 Q2 1.3 4.4 Q1 Q2 7 9 14 18 , ID, DRAIN CURRENT (A) PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX VGS = 10V VGS = 4.5V VGS = , , GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX 2 25 2 20 1 30 10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) 4 PULSE DURATION = 80Î


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PDF FDS8858CZ FDS8858
2013 - Not Available

Abstract: No abstract text available
Text: , Bluetooth®, Wireless LAN • Car audio and accessories RoHS Compliant F G 8 pF 10 pF 12 pF , DL Table 2 Remarks μW pF Operating Temp. Range T_use -30 to +85 °C , ‰¤f_nom≤50000kHz Level of Drive 10000≤f_nom<12000kHz 80Î © max. 12000≤f_nom<26000kHz 50Ω max. 26000≤f_nom≤50000kHz *50≤f_nom≤80 (MHz) 40Ω max. 10μW (100μW max.) 50≤f_nom≤80 (MHz) 80Î © max


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PDF CX5032SB CX-96F) CX5032SB 10000kHz 50000kHz 12000kHz 26000kHz
2013 - Not Available

Abstract: No abstract text available
Text: Q1 VDS = 20V, VGS = 0V, f = 1MHZ Q1 Q2 750 1000 1000 1330 pF Q1 Q2 115 140 155 185 pF Q1 Q2 75 75 115 115 pF 1.1 3.3 3.3 9.9 Ω Q1 Q2 7 7 , CURRENT (A) 50 VGS = 10V PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX 40 VGS = 4.5V 30 , 60 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX TJ = 125oC 30 TJ = 25oC 20 10 100 , Source Voltage 60 60 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX IS, REVERSE DRAIN CURRENT (A


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PDF FDD8424H
2014 - Not Available

Abstract: No abstract text available
Text: CAPACITANCE ( pF ) PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5% MAX 1.8 NORMALIZED DRAIN TO SOURCE , Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge 7735 - pF 2160 - pF - 129 - pF 2.5 - Ω - 90 107 nC - 13.5 15.5 nC - 43 - , AVALANCHE (ms) PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5% MAX 240 100 1 0.001 1 10 100 200 , 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 250 200 150 100 80Î ¼s PULSE WIDTH Tj=25oC 50


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PDF FDBL9406 com/dwg/PS/PSOF08A
2014 - Not Available

Abstract: No abstract text available
Text: Qgd Gate-to-Drain “Miller“ Charge - 10000 - pF 1400 - pF - 95 - pF 3.3 - Ω - 131 150 nC - 18 21 nC - VDD = 64V ID = 80A - , ) PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5% MAX 250 100 1 0.001 200 Figure 5. Forward Bias , 100 5V 50 80Î ¼s PULSE WIDTH Tj=25oC 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V , . Saturation Characteristics FDP86363_F085 Rev. C1 250 80Î ¼s PULSE WIDTH Tj=175oC 0 1 2 3 4


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PDF FDP86363
2013 - Not Available

Abstract: No abstract text available
Text: Charge Qgd Gate to Drain “Miller“ Charge 2305 - pF 1310 - pF - 105 - pF 0.95 - Ω - 78 102 nC - 6.6 8.6 nC - 13.8 - nC - , 1.0 1.2 1.4 6V 80Î ¼s PULSE WIDTH Tj=25oC 0.1 Figure 7. Forward Diode , ) Figure 6. Transfer Characteristics 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5% MAX 10 80Î ¼s PULSE WIDTH Tj=150oC ID = 20A PULSE DURATION = 80Î ¼s DUTY CYCLE =


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PDF FCB20N60F
2008 - Not Available

Abstract: No abstract text available
Text: Resistance 3115 0.1 pF 775 pF 345 f = 1MHz 4145 580 VDS = 15V, VGS = 0V, f = 1MHz 520 pF 1.8 5.6 Ω Switching Characteristics 13 24 ns 8 16 ns , 4.0V 45 30 VGS = 3.0V 15 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX 3.5 VGS = 3.0V , 1.8 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX 1.6 rDS(on), DRAIN TO SOURCE ON-RESISTANCE


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PDF FDS8813NZ
2007 - Not Available

Abstract: No abstract text available
Text: 2540 pF 1060 pF 510 f = 1MHz 3380 795 VDS = 10V, VGS = 0V, f = 1MHz 765 pF Ω 1.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off , VGS = 10V VGS = 4V 100 VGS = 3.5V 50 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX 0 0 , 50 100 150 ID, DRAIN CURRENT(A) 200 20 1.6 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5%MAX 1.4 1.2 1.0 ID = 16.5A VGS = 10V 0.8 0.6 -75 ID = 16.5A PULSE DURATION = 80Î ¼s DUTY


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PDF FDMC8554
2013 - Not Available

Abstract: No abstract text available
Text: - 5900 8000 pF 3200 4200 pF - 250 - pF 1 - Ω - 190 , 100 10 TJ = 150 oC ID, DRAIN CURRENT (A) VGS = 0 V TJ = 25 oC 1 0.1 80Î , ) Figure 7. Forward Diode Characteristics rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 80Î ¼s PULSE WIDTH Tj=150oC 64 32 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5% MAX 300 200 TJ = 150oC , Characteristics 300 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5% MAX 100


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PDF FCH47N60 190nC O-247
2013 - Not Available

Abstract: No abstract text available
Text: - 14600 - pF 4700 - pF - 370 - pF 3.2 - Ω - 207 253 , VGS 15V Top 10V 8V 7V 6V 5.5V Bottom 150 80Î ¼s PULSE WIDTH Tj=25oC 100 ID, DRAIN , 5V TJ = 25oC STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80Î ¼s DUTY , - VDD) +1] 50 VGS 15V Top 10V 8V 5.5V 7V 6V 5.5V 5V Bottom 150 100 50 80Î , SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 40 PULSE DURATION = 80Î


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PDF FDB86360 207nC O-263
2013 - Not Available

Abstract: No abstract text available
Text: Qgd Gate to Drain “Miller“ Charge - 1810 - pF 304 - pF - 48 - pF 1.9 - Ω - 56 63 nC - 3.3 4 nC - VDD = 50V ID = 20A - , AN7514 and AN7515 PULSE DURATION = 80Î ¼s DUTY CYCLE = 0.5% MAX 40 STARTING TJ = 150oC tAV , BVDSS - VDD) +1] 100 80 VGS 60 10V Top 8V 6V 5V 4.5V 4V Bottom 40 20 80Î , HUF76633S3ST_F085 Rev. C1 50 80Î ¼s PULSE WIDTH Tj=175oC 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5


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PDF HUF76633S3ST O-263AB
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