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Part Manufacturer Description Datasheet Download Buy Part
PIC32MX440F512HT-80I/PT Microchip Technology Inc 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PQFP64, 10 X 10 MM, 1 MM HEIGHT, LEAD FREE, PLASTIC, TQFP-64
PIC32MX440F512HT-80V/MR Microchip Technology Inc IC MCU 32BIT 512KB FLASH 64QFN
PIC32MX440F512HT-80I/MR Microchip Technology Inc 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PQCC64, 9 X 9 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, QFN-64
PIC32MX440F512HT-80V/PT Microchip Technology Inc IC MCU 32BIT 512KB FLASH 64TQFP
BC640_J35Z Rochester Electronics LLC General Purpose PNP 80V 1A
BC640TAR Rochester Electronics LLC General Purpose PNP 80V 1A
SF Impression Pixel

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Microchip Technology Inc
PIC32MX440F512HT-80V/PT 512 KB Flash; 32 KB RAM; USB-OTG; 80 MHz; 10-Bit ADC; DMA PIC32MX440F512HT-80V/PT ECAD Model
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PIC32MX440F512HT-80V/PT datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
PIC32MX440F512HT-80V/PT PIC32MX440F512HT-80V/PT ECAD Model Microchip Technology Embedded - Microcontrollers, Integrated Circuits (ICs), IC MCU 32BIT 512KB FLASH 64TQFP Original PDF

PIC32MX440F512HT-80V/PT Datasheets Context Search

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transistor A431

Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a DM01B 20C26 SAC42 L29a
Text: output. Darlington Amp;BVCBO- 80V ;BVCEO-60V;BVEBO-15V; Pt -.50W. Emitter Coupled Loqic or/and aate: Pt , MHM2014 11 11 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCBO- 80V min;BVCEO-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3.0A max. Pt , 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCB0- 80V min;BVCE0-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCEO- 80V min;BVEB0-15V min;IC-3.0A max. Pt -2.0W max;BVCB0


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 MA3232 UD1001 A431 transistor FT4017 MT42a DM01B 20C26 SAC42 L29a
Y220b

Abstract: 2N3836 BD264 BD263 BD265 UD3008 BD264A NS9726 2N5417 2N3837
Text: ;BVCB0- 80V min;BVCEO-60V min;BVEB0-15V min;IC-3A max. Pt -1 2.5W max;BVCB0-100V min;BVCE0- 80V min;BVEB0 , -1000 min. Pt -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V ;BVCEO-60Vmin;BVEBO , -12.5Wmax;BVCBO-100V;BVCEO-80Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V , ;PC-360mW;BVCB0-45V;hFE min-5000 at 1.0mA. Pt -3W; BVCBO-120V; BVCEO- 80V ;IC10A; hFE-1,200 BVCBO , P-E P-E P-E s s s Y220b Y220b Y220b A A A Pt 40W;BVC60 80V ;BVCEO 80V ;hFE 1.0k;ft 7.0MH2 at IC 2.0 Pt


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PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N3836 BD264 BD263 UD3008 BD264A NS9726 2N5417 2N3837
UD1001

Abstract: FT4017 MA3232 transistor A431 CA3036 DM01B UC850 L0NA UC340 DM02B
Text: ;BVCBO- 80V ;BVCEO-60V;BVEBO-15V; Pt -.50W. Emitter Coupled Loqic or/and aate: Pt -100mW;hFE-1 20;VCE0-15V 40 , MHM2014 11 11 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCBO- 80V min;BVCEO-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3.0A max. Pt , 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCB0- 80V min;BVCE0-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCEO- 80V min;BVEB0-15V min;IC-3.0A max. Pt -2.0W max;BVCB0


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V UD1001 FT4017 MA3232 transistor A431 CA3036 DM01B UC850 L0NA UC340 DM02B
2004 - 700UM

Abstract: No abstract text available
Text: VDD = 8.0V , F = 2.4G 26.0 27.0 dBm Gss Small Signal Gain VDD = 8.0V , F = 2.4G Output 3rd Order Intermodulation Distortion @f=10MHz, Each Tone Pout 16dBm VDD = 8.0V , F = 2.4G 10.0 11.0 dB IMD3 RLIN RLOUT 0.5 -45 -42 dBc Input Return Loss VDD = 8.0V -12 -8 dB Output Return Loss VDD = 8.0V -12 -8 dB 240 270 mA IDD Drain , Forward Gate Current 10 mA PIN Input Power PT Total Power Dissipation 2.8 W TCH


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PDF EMA110 -45dBc 17dBm 760um 700um 10MHz, 16dBm 700UM
2005 - EMA110-130F

Abstract: 2.4g
Text: F Operating Frequency Range P1dB Power at 1dB Compression VDD = 8.0V , F = 2.4G 25.5 27.0 dBm Gss Small Signal Gain VDD = 8.0V , F = 2.4G rd Output 3 Order Intermodulation Distortion @f=10MHz, Each Tone Pout 17dBm VDD = 8.0V , F = 2.4G 9.5 11.0 dB IMD3 RLIN RLOUT 0.5 RTH -42 dBc Input Return Loss VDD = 8.0V -12 -6 dB Output Return Loss VDD = 8.0V -12 -6 dB 240 290 mA Drain Current IDD -45 190 Thermal


Original
PDF EMA110-130F -45dBc 17dBm EMA110 -130F 10MHz, EMA110-130F 2.4g
ST25C transistor

Abstract: TRANSISTOR st25a TRANSISTOR 2n906 ST25A transistor TRANSISTOR st25c transistor 2N905 2N904 2N906 DIODE SJ 98 ST25A
Text: output. Darlington Amp;BVCBO- 80V ;BVCEO-60V;BVEBO-15V; Pt -.50W. Emitter Coupled Loqic or/and aate: Pt , MHM2014 11 11 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCBO- 80V min;BVCEO-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3.0A max. Pt , 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCB0- 80V min;BVCE0-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCEO- 80V min;BVEB0-15V min;IC-3.0A max. Pt -2.0W max;BVCB0


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 ST25C transistor TRANSISTOR st25a TRANSISTOR 2n906 ST25A transistor TRANSISTOR st25c transistor 2N905 2N904 2N906 DIODE SJ 98 ST25A
NS1000 n

Abstract: CA3036 BVCEO-90V transistor A431 2CY38 QD403-78 QD402-78 QD400-78 NS1862 UD1001
Text: ;BVCBO- 80V ;BVCEO-60V;BVEBO-15V; Pt -.50W. Emitter Coupled Loqic or/and aate: Pt -100mW;hFE-1 20;VCE0-15V 40 , MHM2014 11 11 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCBO- 80V min;BVCEO-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3.0A max. Pt , 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCB0- 80V min;BVCE0-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCEO- 80V min;BVEB0-15V min;IC-3.0A max. Pt -2.0W max;BVCB0


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 NS1000 n CA3036 BVCEO-90V transistor A431 2CY38 QD403-78 QD402-78 QD400-78 NS1862 UD1001
Not Available

Abstract: No abstract text available
Text: POWERTECH INC 200 AMPERES T-53-»5 -6501 PT-B502 ft SILICON NPN TRANSISTORS PT -6501 Collector-Base Voltage PT -6502 80V 100V 60V 80V 10V SYMBOL MAXIMUM RATINGS 10V V , ELECTRICAL CHARACTERISTICS (at 25°C unless noted) LIMITS TEST PT -6501 SYMBOL PT -6502 MIN , - 10 mA ' ebo - 1.0 - 1.0 mA c b = 80V . ^ b 5 '0 V E b = 10V, lCB , - 2.0 - 2.0 Hs. *S - 3.0 — 3.0 - 0.7 — 0.7 v CB= 80V


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PDF DG0G311 T-53-Â PT-B502 PT-6501 PT-6502 O-114 300usec. DDDD312 FT-6502
BC507

Abstract: l18b 5.1 channel producing ic BC180 bc507 transistor BC509C PET1075 PET1075A PET6003 T018
Text: N-PL N-PL N-PL S S S MT4i MT42 MT42 Pt -12.5W max;BVCB0- 80V min;BVCEO-60V min;BVEB0-15V min;IC-3A max. Pt -1 2.5W max;BVCB0-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3A max. PM2.5W max.BVCBO-60V min;BVCEO , -40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V ;BVCEO-60Vmin;BVEBO-15Vmin. 7 8 9 MHM2213 MHM2214 MHM2215 11 11 11 , -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V :BVCE0-60Vmin:BVEB0-15Vmin. 10 11 12# MHM2216 , 1.0mA. Pt -3W; BVCBO-120V; BVCEO- 80V ;IC10A; hFE-1,200 BVCBO-50V;BVCEO-50V:BVEBO-50V;hFE-30 at IC-100uA;ft


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PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L BC507 l18b 5.1 channel producing ic BC180 bc507 transistor BC509C PET1075 PET1075A PET6003 T018
transistor k1502

Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 darlington 12V 6.2A 2N5513 K1501 p1027
Text: . Darlington Amp;BVCBO- 80V ;BVCEO-60V;BVEBO-15V; Pt -.50W. Emitter Coupled Loqic or/and aate: Pt -100mW;hFE-1 20 , MHM2014 11 11 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCBO- 80V min;BVCEO-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3.0A max. Pt , 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCB0- 80V min;BVCE0-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCEO- 80V min;BVEB0-15V min;IC-3.0A max. Pt -2.0W max;BVCB0


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 darlington 12V 6.2A 2N5513 K1501 p1027
MA3232

Abstract: FT4017 CA3036 BF123 BVEBO-15V BF121 DIODE SJ 98 DM01B A431 GW 9n
Text: ;BVCBO- 80V ;BVCEO-6QV;BVEBO-15V; Pt -.50W. Emitter CouDled Loaic or/and aate; Pt -100mW;hFE-120:VCEO , :BVCEO-40V min:BVEBO-15V min:IC-3.0A max. Pt -2.0W max;BVCBO- 80V min;BVCEO-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCE0- 80V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max:BVCBO-60V min:BVCEO-40V min:BVEBO-15V min:IC-3.0A max. Pt -2.0W max;BVCB0- 80V min;BVCE0-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCB0-100V min;BVCEO- 80V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max:BVCBO-60V min


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PDF BVCBO-100V BVCE0-80V BVEBO-15V BVCBO-60V BVCEO-40V BVCB0-80V BVCE0-60V BVCB0-100V MA3232 FT4017 CA3036 BF123 BF121 DIODE SJ 98 DM01B A431 GW 9n
A1381 transistor

Abstract: 2N5036 CA3036 MA3232 NF Amp NPN Silicon transistor TO-3 20C26 2N5034 package 2N5034 L29a 2N5035
Text: ;Darlington input and output. Darlington Amp;BVCBO- 80V ;BVCEO-60V;BVEBO-15V; Pt -.50W. Emitter Coupled Loqic or , MHM2014 11 11 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCBO- 80V min;BVCEO-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3.0A max. Pt , 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCB0- 80V min;BVCE0-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCEO- 80V min;BVEB0-15V min;IC-3.0A max. Pt -2.0W max;BVCB0


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V A1381 transistor 2N5036 CA3036 MA3232 NF Amp NPN Silicon transistor TO-3 20C26 2N5034 package 2N5034 L29a 2N5035
DIODE SJ 98

Abstract: DARLINGTON 3A 100V npn array CA3036 silicon epitaxial mesa diode microwave switch V405T OC7420 MT995 MT869 MT726 A431
Text: ;Darlington input and output. Darlington Amp;BVCBO- 80V ;BVCEO-60V;BVEBO-15V; Pt -.50W. Emitter Coupled Loqic or , MHM2014 11 11 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCBO- 80V min;BVCEO-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3.0A max. Pt , 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCB0- 80V min;BVCE0-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCEO- 80V min;BVEB0-15V min;IC-3.0A max. Pt -2.0W max;BVCB0


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 DIODE SJ 98 DARLINGTON 3A 100V npn array CA3036 silicon epitaxial mesa diode microwave switch V405T OC7420 MT995 MT869 MT726 A431
transistor A431

Abstract: CA3036 A431 transistor a106 transistor PET3001 GME3001 d16P4 AT344 MA3232 A431
Text: output. Darlington Amp;BVCBO- 80V ;BVCEO-60V;BVEBO-15V; Pt -.50W. Emitter Coupled Loqic or/and aate: Pt , MHM2014 11 11 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCBO- 80V min;BVCEO-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3.0A max. Pt , 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCB0- 80V min;BVCE0-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCEO- 80V min;BVEB0-15V min;IC-3.0A max. Pt -2.0W max;BVCB0


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 CA3036 A431 transistor a106 transistor PET3001 GME3001 d16P4 AT344 MA3232 A431
transistor a640

Abstract: transistor A608 2SC632 2SC634 transistor 2sC632 Pt-100W L14B CA3036 DM02B FV918
Text: output. Darlington Amp;BVCBO- 80V ;BVCEO-60V;BVEBO-15V; Pt -.50W. Emitter Coupled Loqic or/and aate: Pt , MHM2014 11 11 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCBO- 80V min;BVCEO-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3.0A max. Pt , 11 N-PL N-PL N-PL s s s R89a R89a R89a GG GG GG Pt -2.0W max;BVCB0- 80V min;BVCE0-60V min;BVEBO-15V min;IC-3.0A max. Pt -2.0W max;BVCBO-100V min;BVCEO- 80V min;BVEB0-15V min;IC-3.0A max. Pt -2.0W max;BVCB0


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor a640 transistor A608 2SC632 2SC634 transistor 2sC632 Pt-100W L14B CA3036 DM02B FV918
2SC632

Abstract: 2SC631 transistor 2sC632 FV918 2N1082 BCY50 ML102B FK918 r103a BD263
Text: ;BVCB0- 80V min;BVCEO-60V min;BVEB0-15V min;IC-3A max. Pt -1 2.5W max;BVCB0-100V min;BVCE0- 80V min;BVEB0 , -1000 min. Pt -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V ;BVCEO-60Vmin;BVEBO , -12.5Wmax;BVCBO-100V;BVCEO-80Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V , ;PC-360mW;BVCB0-45V;hFE min-5000 at 1.0mA. Pt -3W; BVCBO-120V; BVCEO- 80V ;IC10A; hFE-1,200 BVCBO , P-E P-E P-E s s s Y220b Y220b Y220b A A A Pt 40W;BVC60 80V ;BVCEO 80V ;hFE 1.0k;ft 7.0MH2 at IC 2.0 Pt


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PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2SC632 2SC631 transistor 2sC632 FV918 2N1082 BCY50 ML102B FK918 r103a BD263
2N5417

Abstract: UD3008 2N5292 A 14U CI44 BD264A BD263 BC412 BC175 usaf511es035
Text: N-PL N-PL N-PL S S S MT4i MT42 MT42 Pt -12.5W max;BVCB0- 80V min;BVCEO-60V min;BVEB0-15V min;IC-3A max. Pt -1 2.5W max;BVCB0-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3A max. PM2.5W max.BVCBO-60V min;BVCEO , -40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V ;BVCEO-60Vmin;BVEBO-15Vmin. 7 8 9 MHM2213 MHM2214 MHM2215 11 11 11 , -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V :BVCE0-60Vmin:BVEB0-15Vmin. 10 11 12# MHM2216 , 1.0mA. Pt -3W; BVCBO-120V; BVCEO- 80V ;IC10A; hFE-1,200 BVCBO-50V;BVCEO-50V:BVEBO-50V;hFE-30 at IC-100uA;ft


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PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N5417 UD3008 2N5292 A 14U CI44 BD264A BD263 BC412 BC175 usaf511es035
PET8002

Abstract: BF125 l18b BD267 BFW74 T046 BFW76 BFX53 GW 9n hFE-150
Text: N-PL N-PL N-PL S S S MT4i MT42 MT42 Pt -12.5W max;BVCB0- 80V min;BVCEO-60V min;BVEB0-15V min;IC-3A max. Pt -1 2.5W max;BVCB0-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3A max. PM2.5W max.BVCBO-60V min;BVCEO , -40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V ;BVCEO-60Vmin;BVEBO-15Vmin. 7 8 9 MHM2213 MHM2214 MHM2215 11 11 11 , -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V :BVCE0-60Vmin:BVEB0-15Vmin. 10 11 12# MHM2216 , 1.0mA. Pt -3W; BVCBO-120V; BVCEO- 80V ;IC10A; hFE-1,200 BVCBO-50V;BVCEO-50V:BVEBO-50V;hFE-30 at IC-100uA;ft


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PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L PET8002 BF125 l18b BD267 BFW74 T046 BFW76 BFX53 GW 9n hFE-150
80 amp 30v npn darlington

Abstract: transistor 2sc115 bd107a UD3008 2SC1257 B3571 A515 HFE-10 BLY27 MD23A
Text: ;BVCB0- 80V min;BVCEO-60V min;BVEB0-15V min;IC-3A max. Pt -1 2.5W max;BVCB0-100V min;BVCE0- 80V min;BVEB0 , -1000 min. Pt -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V ;BVCEO-60Vmin;BVEBO , -12.5Wmax;BVCBO-100V;BVCEO-80Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V , ;PC-360mW;BVCB0-45V;hFE min-5000 at 1.0mA. Pt -3W; BVCBO-120V; BVCEO- 80V ;IC10A; hFE-1,200 BVCBO , P-E P-E P-E s s s Y220b Y220b Y220b A A A Pt 40W;BVC60 80V ;BVCEO 80V ;hFE 1.0k;ft 7.0MH2 at IC 2.0 Pt


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PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 80 amp 30v npn darlington transistor 2sc115 bd107a UD3008 2SC1257 B3571 A515 HFE-10 BLY27 MD23A
PNP transistor A705

Abstract: 2N1620 2sc768 UD3008 2N1619 MHT6414 3TX002 MHT6311 MHT6312 MHT6313
Text: N-PL N-PL N-PL S S S MT4i MT42 MT42 Pt -12.5W max;BVCB0- 80V min;BVCEO-60V min;BVEB0-15V min;IC-3A max. Pt -1 2.5W max;BVCB0-100V min;BVCE0- 80V min;BVEB0-15V min;IC-3A max. PM2.5W max.BVCBO-60V min;BVCEO , -40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V ;BVCEO-60Vmin;BVEBO-15Vmin. 7 8 9 MHM2213 MHM2214 MHM2215 11 11 11 , -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V :BVCE0-60Vmin:BVEB0-15Vmin. 10 11 12# MHM2216 , 1.0mA. Pt -3W; BVCBO-120V; BVCEO- 80V ;IC10A; hFE-1,200 BVCBO-50V;BVCEO-50V:BVEBO-50V;hFE-30 at IC-100uA;ft


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PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L PNP transistor A705 2N1620 2sc768 UD3008 2N1619 MHT6414 3TX002 MHT6311 MHT6312 MHT6313
2SC736

Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
Text: ;BVCB0- 80V min;BVCEO-60V min;BVEB0-15V min;IC-3A max. Pt -1 2.5W max;BVCB0-100V min;BVCE0- 80V min;BVEB0 , -1000 min. Pt -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V ;BVCEO-60Vmin;BVEBO , -12.5Wmax;BVCBO-100V;BVCEO-80Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt -12.5Wmax;BVCB0- 80V , ;PC-360mW;BVCB0-45V;hFE min-5000 at 1.0mA. Pt -3W; BVCBO-120V; BVCEO- 80V ;IC10A; hFE-1,200 BVCBO , P-E P-E P-E s s s Y220b Y220b Y220b A A A Pt 40W;BVC60 80V ;BVCEO 80V ;hFE 1.0k;ft 7.0MH2 at IC 2.0 Pt


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PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2SC736 BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
5502 M

Abstract: powertech
Text: SYMBOL V CBO V CEO V EBO 'c m * PT -5501 80V 60V 10V 100 A 50A 350W 200W -65 to 200° C -65 to 200° C TO-63 PT -5502 100 V 80V 10V 100A 50A 350W 200W -65 to 200° C -65 to 200°C TO-63 0.5° C/W 'c , PowerTech "BIG IDEAS IN BIG POWER " 10Q AMPERES F T -5501 PT -55Q2 SILICOIM IN IP I N ! , TEST SY M B O L PT -5501 M IN . MAX. PT -5502 M IN . M AX . TEST CO N D IT IO N S D.C , ' e b =0 V CB= 80V ' 1EB=0 V EB=10V' 'CB=® l c =5A, V CE=10V l c =50A 1.0 2.0 3.0 0.7 1.0


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PDF PT-55Q2 PT-5501 PT-5502 300usec. 5502 M powertech
2004 - EMA109

Abstract: No abstract text available
Text: VDD = 8.0V , F = 2.4G 23.0 24.0 dBm Gss Small Signal Gain VDD = 8.0V , F = 2.4G rd Output 3 Order Intermodulation Distortion @f=10MHz, Each Tone Pout 14dBm VDD = 8.0V , F = 2.4G 10.0 11.0 dB IMD3 0.5 -45 -42 dBc Input Return Loss RLIN RLOUT VDD = 8.0V -12 -8 dB Output Return Loss VDD = 8.0V -12 -8 dB 120 150 mA IDD Drain , Forward Gate Current 10 mA PIN Input Power PT Total Power Dissipation 1.4 W TCH


Original
PDF EMA109 -45dBc 14dBm 760um 700um 10MHz, 14dBm EMA109C EMA109
40372

Abstract: 2N3054 2N5575 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220
Text: Ic to 80 A . Pt to 300 W . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES lc - 1.6 A max. PT -8.76 W max. ITO-391- Ie- 1.5 A max. PT - 8.7S W max. (TO-39)* lc - 3.S A max. PT ■10 W max. ITOMI- lc - « A max. PT " SO W max. ITO«)" lc ■4 A max. Py - 36 W max. VERSAWATT ITO-220) le • 3 A max. Pj-SOW max. (TO-661— lc ■3 A max. PT - 36 W max. VERSAWATT ITO-2201 1. - 7 A max. Fr-SOWmax. VERSAWATT (TO-2201 lc - 15 A max. Py- 1B0W max. (TO-31 lc - 16 A max. PT * 75 W max. VERSAWATT


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PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 40372 2N3054 2N5575 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220
Not Available

Abstract: No abstract text available
Text: mmm “BIG IDEAS IN Power!ech b ig p o w e r ’’ ■100 A M P E R E S PT -5501 PT -5502 SILICON IM PIM TRANSISTORS MAXIMUM RATINGS SYMBOL Collector-Base Voltage PT -5501 PT -5502 80V 100V 60V 80V 10V 10V V CBO Collector-Emitter Voltage V CEO , °C unless noted) L IM IT S TEST PT -5501 SYMBOL PT -5502 M IN . D.C. Current Gain* D.C , *f * Vcb^ ' eb^ V CB= 1 0 0 V ' ' e b =0 v c b =60V' 'eb^ v c b = 80V > ’eb3


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PDF PT-5501 PT-5502
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