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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
PIC17LCR42T-08I/L Microchip Technology Inc 8-BIT, MROM, 8 MHz, RISC MICROCONTROLLER, PQCC44, PLASTIC, LCC-44
PIC17LCR42T-08/P Microchip Technology Inc 8-BIT, MROM, 8 MHz, RISC MICROCONTROLLER, PDIP40, 0.600 INCH, PLASTIC, DIP-40
PIC17LCR42-08/PQ Microchip Technology Inc 8-BIT, MROM, 8 MHz, RISC MICROCONTROLLER, PQFP44, 10 X 10 MM, 1.60 MM HEIGHT, PLASTIC, MQFP-44
PIC17LCR42T-08/PT Microchip Technology Inc 8-BIT, MROM, 8 MHz, RISC MICROCONTROLLER, PQFP44, 10 X 10 MM, 1 MM HEIGHT, PLASTIC, TQFP-44
PIC17LCR42-08/PT Microchip Technology Inc 8-BIT, MROM, 8 MHz, RISC MICROCONTROLLER, PQFP44, 10 X 10 MM, 1 MM HEIGHT, PLASTIC, TQFP-44
PIC17LCR42-08I/PT Microchip Technology Inc 8-BIT, MROM, 8 MHz, RISC MICROCONTROLLER, PQFP44, 10 X 10 MM, 1 MM HEIGHT, PLASTIC, TQFP-44

PIC17LCR42-25I/P datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
PIC17LCR42-25I/P PIC17LCR42-25I/P ECAD Model Microchip Technology High-Performance 8-Bit CMOS EPROM/ROM Microcontroller Original PDF
PIC17LCR42-25I/P PIC17LCR42-25I/P ECAD Model Microchip Technology High-performance 8-Bit CMOS EPROM, ROM microcontroller Original PDF
PIC17LCR42-25I/PQ PIC17LCR42-25I/PQ ECAD Model Microchip Technology High-performance 8-Bit CMOS EPROM, ROM microcontroller Original PDF
PIC17LCR42-25I/PQ PIC17LCR42-25I/PQ ECAD Model Microchip Technology High-Performance 8-Bit CMOS EPROM/ROM Microcontroller Original PDF
PIC17LCR42-25I/PT PIC17LCR42-25I/PT ECAD Model Microchip Technology High-Performance 8-Bit CMOS EPROM/ROM Microcontroller Original PDF

PIC17LCR42-25I/P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - Not Available

Abstract: No abstract text available
Text: Signal Pulse Response Top= 25ï ¿½ RL=10k� to VSS Av=+1, Vin=1Vp- p 10�s/Div Top= 25ï ¿½ RL , =10k� to VSS Av=+1, Vin=100mVp- p 10�s/Div 10�s/Div 50mV/Div 50mV/Div Top= 25ï ¿½ RL , VSS Av=+1, Vin=1Vp- p 180 50 Top= 25ï ¿½ 180 Av=-100, RL=1k� to VSS 150 40 Gain(dB , ) Large Signal Pulse Response Large Signal Pulse Response Top= 25ï ¿½ RL=10k� to VSS Av=+1, Vin=2Vp- p 10�s/Div 10�s/Div 1V/Div 1V/Div 1V/Div Top= 25ï ¿½ RL=10k� to VSS Av=-1, Vin=2Vp- p


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PDF ELM832B ELM832B 100mVp-p 50mV/Div
2006 - Not Available

Abstract: No abstract text available
Text: Top= 25ï ¿½ RL=10k� to VSS Av=+1, Vin=1Vp- p 10�s/Div Top= 25ï ¿½ RL=10k� to VSS Av=-1, Vin=1Vp- p , ) Small Signal Pulse Response Small Signal Pulse Response Top= 25ï ¿½ RL=10k� to VSS Av=+1, Vin=100mVp- p 10�s/Div 10�s/Div 50mV/Div 50mV/Div Top= 25ï ¿½ RL=10k� to VSS Av=-1, Vin=100mVp- p , ) Large Signal Pulse Response Large Signal Pulse Response Top= 25ï ¿½ RL=10k� to VSS Av=+1, Vin=2Vp- p 10�s/Div 10�s/Div 1V/Div 1V/Div 1V/Div Top= 25ï ¿½ RL=10k� to VSS Av=-1, Vin=2Vp- p


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PDF ELM832BW ELM832BWã ELM832Bã 100mVp-p 50mV/Div
2006 - Not Available

Abstract: No abstract text available
Text: Signal Pulse Response Large Signal Pulse Response Top= 25ï ¿½ RL=10k� to VSS Av=+1, Vin=1Vp- p 10�s/Div Top= 25ï ¿½ RL=10k� to VSS Av=-1, Vin=1Vp- p 10�s/Div 500mV/Div 500mV/Div , Signal Pulse Response Top= 25ï ¿½ RL=10k� to VSS Av=+1, Vin=100mVp- p 10�s/Div 10�s/Div 50mV/Div 50mV/Div Top= 25ï ¿½ RL=10k� to VSS Av=-1, Vin=100mVp- p 50mV/Div 50mV/Div , Phase - Frequency 60 RL=100k�, CL=20pF to VSS Av=+1, Vin=1Vp- p 180 50 Top= 25ï ¿½ 180 Av


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PDF ELM832BW ELM832B. 200kHz 100mVp-p 50mV/Div
2006 - Not Available

Abstract: No abstract text available
Text: ¿½ RL=10k� to VSS Av=+1, Vin=1Vp- p 10�s/Div Top= 25ï ¿½ RL=10k� to VSS Av=-1, Vin=1Vp- p , ) Small Signal Pulse Response Small Signal Pulse Response Top= 25ï ¿½ RL=10k� to VSS Av=+1, Vin=100mVp- p 10�s/Div 10�s/Div 50mV/Div 50mV/Div Top= 25ï ¿½ RL=10k� to VSS Av=-1, Vin=100mVp- p , Phase - Frequency 60 RL=100k�, CL=20pF to VSS Av=+1, Vin=1Vp- p 180 50 Top= 25ï ¿½ 180 Av , Pulse Response Top= 25ï ¿½ RL=10k� to VSS Av=+1, Vin=2Vp- p 10�s/Div 10�s/Div 1V/Div


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PDF ELM832B 100mVp-p 50mV/Div
2011 - Not Available

Abstract: No abstract text available
Text: 0.47 474 - - - - 0.68 684 - - - P 10%/ 25Î © 1.0 105 - - P 10%/ 25Î © P 10%/ 25Î © A2*8%/ 25Î © 1.5 155 - P 10%/ 25Î © P 10%/ 25Î © A2*8%/ 25Î © J , 225 P 10%/ 25Î © P 10%/ 25Î © A2*8%/ 25Î © 3.3 335 P 10%/ 25Î © P 20%/20Ω A2*8%/18Ω A 4 , © B2*8%/3.5Ω A*8%/5.0Ω B*8%/3.0Ω B*8%/ 2.5Î © C 6%/1.8Ω P 20%/5.0Ω P 20%/4.0Ω A2 12%/4.0Ω A2 , %/ 25Î © A2*8%/20Ω A 4%/8.0Ω J 20%/30Ω P 20%/20Ω A2*8%/12Ω A 4%/7.0Ω J 20%/ 25Î © P 20%/20Î


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PDF 50mm/Sec.
2011 - Standard Resistance Values

Abstract: International ohmite
Text: 250Ω and 500Ω) 100 102 105 107 110 113 115 118 5% Tol. E24 Values (Plus 25Î © and 50Î , 191 196 200 205 210 215 221 226 232 237 243 249 250 20% Tol. E6 Values (Plus 25Î , . E24 Values (Plus 25Î © and 50Ω) 10% Tol. E12 Values (Plus 25Î © and 50Ω) 27 20% Tol. E6 Values (Plus 25Î © and 50Ω) 27 562 576 590 604 619 30 33 33 33 36 39 1 , 5% Tol. E24 Values (Plus 25Î © and 50Ω) 10% Tol. E12 Values (Plus 25Î © and 50Ω) 56


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PDF 1-866-9-OHMITE Standard Resistance Values International ohmite
2009 - Not Available

Abstract: No abstract text available
Text: © 0.68 684 - - - - A 4%/12Ω A*6%/10Ω 1.0 105 - - P 10%/ 25Î © P 10%/ 25Î © J 10%/30Ω P 20%/ 25Î © A2*6%/16Ω A 4%/10Ω 35 A 4%/18Ω A 4%/18Ω A 4%/15Ω A*6%/12Î , %/4.0Ω C 4%/3.0Ω 104 154 224 334 2.5 - J 20%/30Ω P 20%/ 25Î © A2*8%/20Ω A 4%/8.0Ω J 20%/30Ω P 20%/20Ω A2*8%/12Ω A 4%/7.0Ω J 20%/ 25Î © P 20%/20Ω A2*8%/12Ω A*8%/5.5Ω J 20%/10Ω P 20%/10Ω A2*8%/8.0Ω A*8%/5.0Ω B 4%/3.5Ω 16 - 20 - J 10%/ 25Î © A2*6%/13Ω A 4


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PDF 50mm/Sec.
Not Available

Abstract: No abstract text available
Text: THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25ï ‚°C Derate above 25ï ‚°C PD Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25ï ‚°C Derate above 25ï ‚°C Thermal Resistance, Junction−to−Ambient , : BCW30LT1/D BCW30LT1G, SBCW30LT1G ELECTRICAL CHARACTERISTICS (TA = 25ï ‚°C unless otherwise noted , kHz, BW = 200 Hz) pF NF dB TYPICAL NOISE CHARACTERISTICS (VCE = −  5.0 Vdc, TA = 25ï


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PDF BCW30LT1G, SBCW30LT1G BCW30LT1/D
Not Available

Abstract: No abstract text available
Text: THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25ï ‚°C Derate above 25ï ‚°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2), TA = 25ï ‚°C Derate above 25ï ‚°C Thermal Resistance, Junction−to−Ambient , CHARACTERISTICS (TA = 25ï ‚°C unless otherwise noted) Symbol Min Max 32 − 32 − 5.0 â , 25ï ‚°C) 20 100 BANDWIDTH = 1.0 Hz RS = 0 50 300 mA In, NOISE CURRENT (pA) e n, NOISE


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PDF BCW33LT1G, SBCW33LT1G BCW33LT1/D
Not Available

Abstract: No abstract text available
Text: Dissipation @ TC = 25ï ‚°C Derate above 25ï ‚°C PD Total Power Dissipation (Note 1) @ TA = 25ï ‚°C Derate above 25ï ‚°C PD Operating and Storage Junction Temperature Range TJ, Tstg Adc 8 16 , CURRENT GAIN 10,000 7000 5000 TJ = 150C 3000 2000 25ï ‚°C 1000 700 500 300 200 0.1 - 55C 0.2 5000 TJ = 150C 3000 2000 25ï ‚°C 1000 - 55C 500 0.5 0.7 0.3 , (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. DC Current Gain TJ = 25ï ‚°C 2.6 IC


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PDF MJD122, NJVMJD122T4G MJD127 2N6040â 2N6045 TIP120â TIP122 TIP125â TIP127 MJD122/D
Not Available

Abstract: No abstract text available
Text: : SOT-89 Z is Lead Free designator : P : Commercial Standard, Lead (Pb) Free and Phosphorous ( P ) Free , Ground Pin Regulator Input Pin ABSOLUTE MAXIMUM RATINGS (TA= 25ï ‚°C, Unless Otherwise Specified , 5.15 4.85 5 5.15 Tj= 25ï ‚°C, 7VVIN20V - 15 150 Tj= 25ï ‚°C, 8VVIN20V - 15 100 Tj= 25ï ‚°C, 1mAIOUT100mA - 5 60 Tj= 25ï ‚°C, 1mAIOUT40mA - 8 30 IOUT=5mA, Tj= 25ï ‚°C - 3.9 6 - - 1.5 - - 0.1 - 40 -


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PDF RS78L05 100mA 100mA OT-89
Not Available

Abstract: No abstract text available
Text: VEB 5 Vdc IC 10 20 Adc Total Power Dissipation @ TC = 25ï ‚°C Derate above 25ï ‚°C PD Total Power Dissipation @ TA = 25ï ‚°C Derate above 25ï ‚°C PD Operating and Storage , MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25ï , MJB45H11, NJVMJB45H11 ns 0.2 0.1 0.1 P (pk) ZqJC(t) = r(t) RqJC RqJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P (pk) ZqJC(t) 0.05 0.02


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PDF MJB44H11 NJVMJB44H11 MJB45H11 NJVMJB45H11 MJB44H11/D
Not Available

Abstract: No abstract text available
Text: IC Base Current IB Total Power Dissipation @ TC = 25ï ‚°C Derate above 25ï ‚°C PD Total Power Dissipation (Note 1) @ TA = 25ï ‚°C Derate above 25ï ‚°C PD Operating and Storage , . ELECTRICAL CHARACTERISTICS (TC = 25ï ‚°C unless otherwise noted) ÎÎÎ Î Î Î à , IC/IB = 10 TJ = 25ï ‚°C 500 300 200 100 50 30 20 MJD200 MJD210 1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (A) VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25ï


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PDF MJD200 MJD210, NJVMJD210T4G MJD200/D
2014 - Not Available

Abstract: No abstract text available
Text: production 1 2011-03 2014-01-07 Rev.2.0 TPC8407 4. Absolute Maximum Ratings (Note) (Ta = 25î €Œ unless otherwise specified) 25î €Œ Characteristics P /N Rating Unit P-ch Drain-source , Characteristics 6.1. Static Characteristics (Ta = 25î €Œ unless otherwise specified) 25î €Œ Characteristics P , = 25î €Œ unless otherwise specified) 25î €Œ Characteristics Input capacitance P /N Symbol , TPC8407 MOSFETs Silicon P -/N-Channel MOS (U-MOS/U-MOS-H) TPC8407 1. Applications â


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PDF TPC8407
Not Available

Abstract: No abstract text available
Text: evenly supplied to both devices.) Note 6: P channel: VDD = -24 V, Tch = 25î €Œ (initial), L = 0.2 mH, RG , Characteristics (Ta = 25î €Œ unless otherwise specified) 25î €Œ Characteristics P /N P-ch IGSS IDSS N-ch , ) 25î €Œ Characteristics Reverse drain current (pulsed) Diode forward voltage P /N (Note 8 , TPCP8405 MOSFETs Silicon P -/N-Channel MOS (U-MOS/U-MOS-H) TPCP8405 1. Applications â , .2.0 TPCP8405 4. Absolute Maximum Ratings (Note) (Ta = 25î €Œ unless otherwise specified) 25î


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PDF TPCP8405
Not Available

Abstract: No abstract text available
Text: )=1.4V typ. (IC=30A, VGE=15V)  IGBT IC=100A (Tc= 25ï ‚°C)  IGBT tf=80ns typ.  Low switching , Absolute Maximum Ratings at Ta = 25ï ‚°C, Unless otherwise specified Parameter Symbol Collector to , Gate to Emitter Voltage VGES Collector Current (DC) @Tc= 25ï ‚°C *2 Limited by Tjmax , . Power Dissipation Tc= 25ï ‚°C (Our ideal heat dissipation condition) *2 Note : ï€ *1 Collector , NGTB30N60L2WG Electrical Characteristics at Ta = 25ï ‚°C, Unless otherwise specified Value Parameter Symbol


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PDF ENA2308A NGTB30N60L2WG O-247-3L A2308-8/8
Not Available

Abstract: No abstract text available
Text: evenly supplied to both devices.) Note 6: P channel: VDD = -32 V, Tch = 25î €Œ (initial), L = 0.2 mH, RG , Characteristics (Ta = 25î €Œ unless otherwise specified) 25î €Œ Characteristics P /N P-ch IGSS IDSS N-ch , TPCP8406 MOSFETs Silicon P -/N-Channel MOS (U-MOS/U-MOS-H) TPCP8406 1. Applications â , .2.0 TPCP8406 4. Absolute Maximum Ratings (Note) (Ta = 25î €Œ unless otherwise specified) 25î €Œ Characteristics P /N Rating Unit P-ch Drain-source voltage Symbol VDSS -40 V N-ch


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PDF TPCP8406
Not Available

Abstract: No abstract text available
Text: 2011-03-11 Rev.1.0 TPC8407 4. Absolute Maximum Ratings (Note) (Ta = 25î €Œ unless otherwise specified) 25î €Œ P /N Drain-source voltage Symbol Rating Unit P-ch Characteristics VDSS , Characteristics 6.1. Static Characteristics (Ta = 25î €Œ unless otherwise specified) 25î €Œ Characteristics P , otherwise specified) 25î €Œ Characteristics Input capacitance P /N Symbol P-ch Ciss P-ch , TPC8407 MOSFETs Silicon P -/N-Channel MOS (U-MOS/U-MOS-H) TPC8407 1. Applications â


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PDF TPC8407
2014 - UC33063A

Abstract: No abstract text available
Text: ® LINEAR INTEGRATED CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA= 25ï ‚°C, unless otherwise specified , -0.3 ~ +40 V 40 V 40 V 40 V 40 V 1.5 A DIP-8 1250 Power Dissipation (Ta= 25ï ‚°C) PD mW , VSENSE VCE(SAT)1 VCE(SAT)2 GI (DC) IC(OFF) VTHD VTHD II(BIAS) TEST CONDITIONS VCC=5 to 40V, Ta= 25ï ‚°C VCC=5 to 40V, Ta= 25ï ‚°C Ta= 25ï ‚°C V7=VCC, Ta= 25ï ‚°C ICHG=IDISCHG, Ta= 25ï ‚°C ISW=1.0A, VC(DRIVER)=VC(SW) ISW=1.0A, VC(DRIVER)=50mA ISW=1.0A, VCE=5.0V, Ta= 25ï ‚°C VCE=40.0V, Ta= 25ï ‚°C VCC=3 ~ 40V


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PDF UC33063A UC33063A 100Hz 100kHz. QW-R103-044
2012 - Not Available

Abstract: No abstract text available
Text: IB Total Power Dissipation @ TC = 25ï ‚°C Derate above 25ï ‚°C PD Total Power Dissipation* @ TA = 25ï ‚°C Derate above 25ï ‚°C PD Operating and Storage Junction Temperature Range TJ , Ž ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25ï ‚°C unless otherwise noted) Characteristic Symbol Min , 25ï ‚°C 1000 700 500 300 200 0.1 - 55C 0.2 0.5 0.7 0.3 1 2 3 5 7 10 3 TJ = 25ï ‚°C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2


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PDF MJD128T4G, NJVMJD128T4G MJD128/D
Not Available

Abstract: No abstract text available
Text: ) RT (Pin 6) CT (Pin 7) VIR -1.0 to Vreg V C/W Thermal Characteristics P Suffix , temperature range for the MC33363B: Tlow = - 25ï ‚°C Thigh = +125C ELECTRICAL CHARACTERISTICS (VCC = 20 V, RT = 10 k, CT = 390 pF, CPin 8 = 1.0 mF, for typical values TJ = 25ï ‚°C, for min/max values TJ , .) Characteristic Symbol Min Typ Max Unit Output Voltage (IO = 0 mA, TJ = 25ï ‚°C) Vreg 5.5 , CT = 390 pF TJ = 25ï ‚°C (VCC = 20 V) TJ = Tlow to Thigh (VCC = 20 V to 40 V) CT = 2.0 nF TJ = 25ï


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PDF MC33363B MC33363B 16-leot MC33363B/D
Not Available

Abstract: No abstract text available
Text: Dissipation Per Device FR−5 Board (Note 1) TA = 25ï ‚°C Derate Above 25ï ‚°C PD Junction and Storage , = 25ï ‚°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF , VCE = 5 V 150C 400 300 25ï ‚°C 200 −55C 100 0 0.001 0.01 0.1 500 150C 400 25ï ‚°C 300 200 −55C 100 0 0.001 1 0.01 0.1 Figure 2. DC , CURRENT (A) 0.25 IC/IB = 10 0.20 0.15 150C 0.10 25ï ‚°C 0.05 −55C 0.00 0.0001


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PDF BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G BC848CDW1T1G 363/SCâ BC846 BC847 BC848 BC846BDW1T1/D
2011 - Not Available

Abstract: No abstract text available
Text: ) Absolute maximum ratings (Ta=25℃) Parameter Symbol Power dissipation P Junction , =125C Ta= 25ï ‚°C 0.1 f=1MHz 1000 Ta= 25ï ‚°C Ta= 25ï ‚°C 100 10 0.01 5 5.5 6 , 6.7 AVE:6.752V 6.6 Ta= 25ï ‚°C VR=3.5V n=30pcs 8 7 6 5 4 3 2 2 2.5 3 3.5 AVE:0.334nA Ta= 25ï ‚°C f=1MHz VR=0V n=10pcs 8 7 6 5 4 AVE:2.87pF 3 2 1 0 Vz DISPERSION MAP 1.5 9 1 6.5 1 10 9 REVERSE CURRENT:IR(nA) Ta= 25ï ‚°C IZ=5mA n


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PDF AEC-Q101 R1120A
2014 - 79LXX

Abstract: No abstract text available
Text: CHARACTERISTICS 79L05(TJ= 25ï ‚°C, C1=0.33µF, COUT=1µF, unless otherwise specified) PARAMETER SYMBOL TEST , VIN=-8~-18V, IOUT =40mA, eIN=1VP- P ,f=120Hz VIN=-10V, IOUT =40mA BW=10Hz~100kH 3.5 6.0 mA Quiescent current IQ Ripple Rejection RR Output Voltage Noise eN 79L06(TJ= 25ï , VIN=-9~ -19V, IOUT =40mA eIN=1VP- P , f=120Hz VIN=-12V, IOUT =40mA BW=10Hz~100kH 3.5 6.0 mA Quiescent current IQ Ripple Rejection RR Output Voltage Noise eN 79L08(TJ= 25ï


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PDF 79LXX 79LXX 100mA. OT-89 79LXXG-AB3-R 79LXXG-S08-R 79LXXL-T92-B 79LXXG-T92-B 79LXXL-T92-K
2005 - Not Available

Abstract: No abstract text available
Text: 2 μA VOUT = 200mVP- P , CL = 1.6pF 1.0 GHz VOUT = 2VP- P , CL = 23.6pF, RS = 25Î © 235 MHz VOUT = 200mVP- P , CL = 1.6pF 100 MHz VOUT = 2VP- P , CL = 23.6pF, RS = 25Î © 35 MHz , ns VOUT = 2VP- P , CL = 23.6pF, RS = 25Î © 1.4 ns TRANSIENT RESPONSE tr, tf Rise and Fall Time, 10% to 90% tS 0.1% Settling Time VOUT = 2VP- P , CL = 23.6pF, RS = 25Î © 6.6 ns , VOUT = 2VP- P , CL = 23.6pF, RS = 25Î © 0.92 ns Propagation Delay- High to Low, 10% to 10


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PDF ISL59442 FN7452 ISL59442 200mVP-P) 235MHz 452V/Î
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