PHK04P02T |
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NXP Semiconductors
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PHK04P02T - P-channel enhancement mode MOS transistor - Configuration: single P-channel ; ID DC: 4.66 A; Qgd (typ): 1.83 nC; RDS(on): 120@4.5V150@2.5V180@1.8V mOhm; VDSmax: 16 V |
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PHK04P02T |
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Philips Semiconductors
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P-channel enhancement mode |
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PHK04P02T,118 |
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NXP Semiconductors
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PHK04P02T - P-channel vertical D-MOS logic level FET, SOT96-1 Package, Standard Marking, Reel Pack, SMD, 13" |
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PHK04P02T,518 |
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NXP Semiconductors
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PHK04P02 - TRANSISTOR 4660 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Small Signal |
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PHK04P02T,518 |
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NXP Semiconductors
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P-channel enhancement mode MOS transistor - Configuration: single P-channel ; ID DC: 4.66 A; Qgd (typ): 1.83 nC; RDS(on): 120@4.5V150@2.5V180@1.8V mOhm; VDSmax: 16 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13" |
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PHK04P02T/T3 |
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NXP Semiconductors
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P-channel enhancement mode MOS transistor - Configuration: single P-channel ; ID DC: 4.66 A; Qgd (typ): 1.83 nC; RDS(on): 120@4.5V150@2.5V180@1.8V mOhm; VDSmax: 16 V |
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Original |
PDF
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