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    PHD6N10E Price and Stock

    Philips Semiconductors PHD6N10E

    POWERMOS TRANSISTOR Power Field-Effect Transistor, 6.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA PHD6N10E 7,500
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    PHD6N10E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PHD6N10E Philips Semiconductors PowerMOS Transistor Original PDF