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    Philips Semiconductors PHD2N50E

    AVALANCHE ENERGY RATED POWERMOS TRANSISTOR Power Field-Effect Transistor, 2A I(D), 500V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA PHD2N50E 10,000
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    PHD2N50E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PHD2N50E Philips Semiconductors PowerMOS transistors Avalanche energy rated Original PDF