The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TO263-3EV-VREG Microchip Technology Inc BOARD EVAL TO220-3/TO263-3 VREG
TO263-5EV-VREG Microchip Technology Inc EVAL BOARD VREG TO220-5/TO263-5
MIC29201-4.8WU-TR Microchip Technology Inc IC REG LDO 4.85V 0.4A TO263-5
MIC29201-5.0WU-TR Microchip Technology Inc IC REG LDO 5V 0.4A TO263-5
MIC29201-12WU-TR Microchip Technology Inc IC REG LDO 12V 0.4A TO263-5
MIC29201-3.3WU-TR Microchip Technology Inc IC REG LDO 3.3V 0.4A TO263-5

PG-TO263-3-2 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - 14N03LA

Abstract: 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 IPB14N03LA JESD22
Text: x R DS(on) product (FOM) · Very low on-resistance R DS(on) PG-TO263-3-2 · Superior thermal , Package Marking IPB14N03LA G PG-TO263-3-2 14N03LA Maximum ratings, at T j=25 °C, unless , Package Outline PG-TO263-3-2 PG-TO263-3-2 : Outline Footprint Rev. 1.7 Packaging page 9 , Conditions Unit min. typ. max. - - 3.2 minimal footprint - - 62 6 cm2 , g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Current is limited by bondwire; with an R thJC= 3.2


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PDF IPB14N03LA PG-TO263-3-2 14N03LA 14N03LA 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 JESD22
2006 - 06n03la

Abstract: PG-TO-263-3-2 06N03 IPB06N03LA PG-TO263-3-2 06n03la datasheet, download JESD22
Text: R DS(on) product (FOM) · Very low on-resistance R DS(on) PG-TO263-3-2 · Superior thermal , Package Marking IPB06N03LA G PG-TO263-3-2 06N03LA Maximum ratings, at T j=25 °C, unless , . 1.6 page 7 2006-05-10 IPB06N03LA G Package Outline PG-TO263-3-2 PG-TO263-3-2 : Outline , Gate plateau voltage V plateau - 3.2 - Gate charge total, sync. FET Q g(sync) V DS , )=f(I D); T j=25 °C parameter: V GS parameter: V GS 25 100 10 V 3.2 V 4.5 V 3.5 V


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PDF IPB06N03LA PG-TO263-3-2 06N03LA 06n03la PG-TO-263-3-2 06N03 PG-TO263-3-2 06n03la datasheet, download JESD22
2006 - 09N03

Abstract: 09n03la PG-TO263-3-2 PG-TO-263-3-2 09N03LA equivalent IPB09N03LA JESD22 09N03L
Text: R DS(on) product (FOM) · Very low on-resistance R DS(on) PG-TO263-3-2 · Superior thermal , Package Marking IPB09N03LA G PG-TO263-3-2 09N03LA Maximum ratings, at T j=25 °C, unless , Outline PG-TO263-3-2 PG-TO263-3-2 : Outline Footprint Rev. 1.6 Packaging page 8 , (off) - 22 33 Fall time tf - 3.2 4.8 Gate to source charge Q gs - , R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 30 70 3.2 V 10 V 3.5 V


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PDF IPB09N03LA PG-TO263-3-2 09N03LA 09N03 09n03la PG-TO263-3-2 PG-TO-263-3-2 09N03LA equivalent JESD22 09N03L
2009 - Diode SMD ED 98

Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME Energy Me diode smd ed 02 smd transistor ed
Text: Worldwide best Rds,on in TO263 PG-TO263-3-2 · Ultra low gate charge · Extreme dv/dt rated · High , IPB60R099CPA Package Marking PG-TO263-3-2 6R099A Maximum ratings, at T j=25 °C, unless otherwise , tr ew no rn fo Rev. 2.1 page 8 2009-03-25 IPB60R099CPA PG-TO263-3-2 : Outlines ed , IPC60R075CPA IPI60R099CPA IPP60R099CPA IPW60R045CPA IPW60R075CPA IPW60R099CPA Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 Bare Die PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 PG-TO247


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PDF IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 Diode SMD ED 98 SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME Energy Me diode smd ed 02 smd transistor ed
2006 - FET K 1358

Abstract: K 1358 fet transistor 11N03LA IPB11N03LA JESD22 PG-TO263-3-2 11N03 marking ff
Text: x R DS(on) product (FOM) PG-TO263-3-2 · Very low on-resistance R DS(on) · Superior thermal , Package Marking IPB11N03LA G PG-TO263-3-2 11N03LA Maximum ratings, at T j=25 °C, unless , page 7 2006-05-11 IPB11N03LA G Package Outline PG-TO263-3-2 PG-TO263-3-2 : Outline , (on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 40 60 3V 3.2 V 4.5 V 3.5 V , 4.5 V 3.5 V 10 10 V 3.2 V 10 3V 2.8 V 0 0 0 1 2 0 3 10 20


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PDF IPB11N03LA PG-TO263-3-2 11N03LA FET K 1358 K 1358 fet transistor 11N03LA JESD22 PG-TO263-3-2 11N03 marking ff
2009 - PG-TO263-3-2

Abstract: PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199
Text: IPB60R099CPA CoolMOS® Power Transistor Product Summary V DS 600 0.105 Q g,typ 60 R DS(on),max V nC Features · Worldwide best Rds,on in TO263 PG-TO263-3-2 · Ultra , Automotive Applications Type Package Marking IPB60R099CPA PG-TO263-3-2 6R099A Maximum , 2009-03-25 IPB60R099CPA PG-TO263-3-2 : Outlines Soldering temperature, reflow soldering Rev. 2.1 , IPP60R099CPA IPW60R045CPA IPW60R075CPA IPW60R099CPA Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2


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PDF IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO263-3-2 PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199
2009 - mosfet 6R199

Abstract: 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
Text: IPW60R075CPA IPW60R099CPA Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 Bare Die PG-TO262 , Gate to drain charge Q gd - 11 - Gate charge total Qg - 32 43 Gate


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PDF IPB60R199CPA PG-TO263-3 6R199A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 mosfet 6R199 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
2006 - H6N03

Abstract: h6n03la H6N03L PG-TO263-3-2 JESD22 PG-TO-263-3-2 IPBH6N03LA
Text: ) product (FOM) · Very low on-resistance R DS(on) PG-TO263-3-2 · Superior thermal resistance · 175 °C , PG-TO263-3-2 H6N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol , IPBH6N03LA G Package Outline PG-TO263-3-2 PG-TO263-3-2 : Outline Footprint Rev. 1.2 Packaging , 90 3.2 V 3.8 V 3.5 V 4.1 V 4.5 V 20 80 4.1 V R DS(on) [m] 70 I D [A] 60 3.8 V 50 40 15 4.5 V 10 3.5 V 30 20 10 V 5 3.2 V 3V 10 2.8 V


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PDF IPBH6N03LA PG-TO263-3-2 H6N03LA H6N03 h6n03la H6N03L PG-TO263-3-2 JESD22 PG-TO-263-3-2
2007 - D06S60C

Abstract: No abstract text available
Text: temperature influence on the switching behavior • High surge current capability D2PAK ( PG-TO263-3-2 ) â , PFC • Motor Drives Type Package Marking Pin 1 Pin 2 IDB06S60C D2PAK ( PG-TO263-3-2 , 2013-08-27 IDB06S60C PG-TO263-3-2 (D2Pak): Outline Dimensions in mm/inches Rev. 2.2 page 6


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PDF IDB06S60C PG-TO263-3-2) D06S60C D06S60C
2014 - TLE4957C

Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 2EDL23N06 TLE5041 tle7242 BTN7970 BTS4141 BFP620F
Text: . . . . . . . . . . . . . . . . . . . . . . . . . . . Microcontrollers, 32 -bit . . . . . . . . . . , . . 23 Microcontrollers, 32 -bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , quality level, -40°C to 85°C, tape & reel as SAK-XC886-6FFA 5V, 32 -Kbyte flash memory, industry , SAF-XC886C-6FFA, industry quality level, 5-V power supply, tape & reel as SAF-XC886C-6FFA 5V, 32 , industry standard 8051 architecture, 32 -Kbyte flash memory, automative quality level, 256-byte RAM, 1536


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PDF
1999 - 09N03

Abstract: 09n03la PG-TO263-3-2 PG-TO-263-3-2 Q67042-S4151 IPB09N03LA G SD SMD DIODE MARKING CODE SMD diode j25
Text: ),max (SMD version) ID 25 8.9 50 V m A PG-TO263-3-2 Type IPB09N03LA G Package PG-TO263-3-2 , 2005-07-11 IPB09N03LA G Package Outline PG-TO263-3-2 : Outline Footprint Packaging Dimensions in , =2.7 V GS=0 V, V DS=15 V, f =1 MHz 1235 474 61 8.9 73 22 3.2 1642 630 92 13 109 33 4.8 ns pF Values typ , D); T j=25 °C parameter: V GS 30 3.2 V 3.5 V 3.8 V 4.1 V 60 4.1 V 25 50 20 40 I D [A] 3.8 V R DS(on) [m ] 15 4.5 V 30 3.5 V 10 10 V 20 3.2 V 10 5 3V 2.8 V


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PDF IPB09N03LA PG-TO263-3-2 Q67042-S4151 09N03LA 09N03 09n03la PG-TO263-3-2 PG-TO-263-3-2 Q67042-S4151 IPB09N03LA G SD SMD DIODE MARKING CODE SMD diode j25
2008 - 600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 HT 1200-4 PEF 4265 T V2.1 SLB 9635
Text: . 9 22 1 Microcontrollers Microcontrollers, 32 -bit . . . . . . . . . . . . . . . . . . . , Microcontrollers, 16/ 32 -bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , -44-1 EPICTM-S: Extended PCM interface controller (16 ISDN or 32 analog subscribers), tape & reel PEF 2054 N V2.1 SP000057916 PG-LCC-44-1 EPICTM-S: Extended PCM interface controller (16 ISDN or 32 , .1 SP000075707 PG-LCC-44-1 EPICTM-1: Extended PCM interface controller ( 32 ISDN or 64 analog subscribers


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PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 HT 1200-4 PEF 4265 T V2.1 SLB 9635
2006 - PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
Text: 7 21 1 26 28 46 2 Microcontrollers Microcontrollers, 32 -bit . . . . . . . . . . . . , request - EPIC®-S: Extended PCM interface controller (16 ISDN or 32 analog subscribers), tape & reel EPIC®-S: Extended PCM interface controller (16 ISDN or 32 analog subscribers), tube EPIC®-1: Extended PCM interface controller ( 32 ISDN or 64 analog subscribers), tube EPIC®-1: Extended PCM interface controller ( 32 ISDN or 64 analog subscribers), tape & reel ELIC®: Extended line card interface


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PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
2007 - Not Available

Abstract: No abstract text available
Text: influence on the switching behavior • High surge current capability D2PAK ( PG-TO263-3-2 ) â , PFC • Motor Drives Type Package Marking Pin 1 Pin 2 IDB10S60C D2PAK ( PG-TO263-3-2 , diF/dt [A/µs] page 5 2013-08-27 IDB10S60C PG-TO263-3-2 (D2PAK): Outline Dimensions in mm , =0.1 32 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 350 i²t


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PDF IDB10S60C PG-TO263-3-2) D10S60C
1999 - TRANSISTOR SMD MARKING CODE 2A

Abstract: 03N60S5 PG-TO263-3-2 SPB03N60S5 SPP03N60S5 smd diode f 5 t
Text: Definition of diodes switching characteristics Rev. 2.4 Page 8 2007-02-14 SPB03N60S5 PG-TO263-3-2 , revolutionary high voltage technology V RDS(on) Feature 600 3.2 A PG-TO263 · Periodic , 3.2 TC = 100 °C 2 Pulsed drain current, tp limited by Tjmax I D puls 5.7 Avalanche , mJ I D = 2.4 A, VDD = 50 V I D = 3.2 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 3.2 A ±20 V Gate source voltage AC (f >1Hz


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PDF SPB03N60S5 PG-TO263 Q67040-S4197 03N60S5 TRANSISTOR SMD MARKING CODE 2A 03N60S5 PG-TO263-3-2 SPB03N60S5 SPP03N60S5 smd diode f 5 t
2009 - IPP60R099CPA

Abstract: IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA
Text: IPP60R099CPA IPW60R045CPA IPW60R075CPA IPW60R099CPA Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2


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PDF IPP60R099CPA PG-TO220-3-1 6R099A PG-TO262-3-1 PG-TO247-3-41 IPP60R099CPA IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA
2009 - 6R299A

Abstract: 6r299 IPC60R075 IPC60R075CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R199CPA IPB60R299CPA
Text: Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 Bare Die PG-TO262-3-1 PG-TO220-3-1 PG-TO247


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PDF IPB60R299CPA PG-TO263-3 6R299A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 6R299A 6r299 IPC60R075 IPC60R075CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R199CPA IPB60R299CPA
1999 - 6R099

Abstract: IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V
Text: 600 0.099 60 V nC PG-TO263-3-2 CoolMOS CS is specially designed for: · CCM PFC for Server and Telecom · Hard switching SMPS topologies for Server and Telecom Type IPB60R099CS Package PG-TO263-3-2 , PG-TO263-3-2 Rev. 1.0 Preliminary page 9 2005-08-31 IPB60R099CS Published by Infineon


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PDF IPB60R099CS PG-TO263-3-2 SP000088490 6R099 6R099 IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V
1999 - IPB14N03LA

Abstract: 14N03 14N03LA smd code D24 SMD CODE d20
Text: ),max (SMD version) ID 25 13.6 30 V m A PG-TO263-3-2 Type IPB14N03LA G Package PG-TO263-3-2 , ] Rev. 1.51 page 7 2005-07-11 IPB14N03LA G Package Outline PG-TO263-3-2 : Outline Footprint , Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.2 1.6 0.1 2 1 µA V 3.2 62 40 K/W Values typ. max , limited by bondwire; with an R thJC= 3.2 K/W the chip is able to carry 45 See figure 3 3) 4) T j,max , j=25 °C parameter: V GS 60 3.2 V 3V 3.5 V 3.8 V 4.1 V 4.5 V 50 4.5 V 50 40 4.1 V


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PDF IPB14N03LA PG-TO263-3-2 Q67042-S4156 14N03LA 14N03 14N03LA smd code D24 SMD CODE d20
2005 - PG-TO263

Abstract: PG-TO263-3-22 PG-TO263-3-5
Text: . 2.3 P 5 11-07 PG-TO263-3-2 , PG-TO263-3-5, PG-TO263-3-22 Rev. 2.3 P 5 11-07 Rev


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PDF PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22 PG-TO263 PG-TO263-3-22 PG-TO263-3-5
2009 - DIODE ED 99

Abstract: diode smd ED 35 transistor smd marking ND mosfet 6R199 IPB60R199CPA smd transistor ds 65 me smd transistor SMD TRANSISTOR MARKING ME diode smd ed 06 smd diode EC
Text: IPC60R075CPA IPI60R099CPA IPP60R099CPA IPW60R045CPA IPW60R075CPA IPW60R099CPA Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 Bare Die PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 PG-TO247-3-41 Dear Customer , =9.9 A, R G=3.3 50 5 Q gs 8 Q gd Qg V DD=400 V, I D=9.9 A, V GS=0 to 10 V 11 32 V plateau 5.0 V SD V GS


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PDF IPB60R199CPA 6R199A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 DIODE ED 99 diode smd ED 35 transistor smd marking ND mosfet 6R199 IPB60R199CPA smd transistor ds 65 me smd transistor SMD TRANSISTOR MARKING ME diode smd ed 06 smd diode EC
1999 - DIODE smd marking CODE df

Abstract: IPB11N03LA SMD CODE d20
Text: ),max (SMD version) ID 25 11.2 30 V m A PG-TO263-3-2 Type IPB11N03LA G Package PG-TO263-3-2 , PG-TO263-3-2 : Outline Footprint Packaging Dimensions in mm Rev. 1.2 page 8 2005-02-09 , GS 40 3V 3.2 V 3.5 V 3.8 V 4.1 V 50 30 4.1 V 40 R DS(on) [m ] I D [A] 30 3.8 V 20 4.5 V 20 3.5 V 10 10 3.2 V 3V 2.8 V 10 V 0 0 1 2 3 0 0 10 20 30 40 50


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PDF IPB11N03LA PG-TO263-3-2 Q67042- 11N03LA DIODE smd marking CODE df SMD CODE d20
2009 - Diode SMD ED 98

Abstract: diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED 1/Diode SMD ED 98
Text: IPW60R075CPA IPW60R099CPA Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 Bare Die PG-TO262-3-1 PG-TO220


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PDF IPB60R299CPA 6R299A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 Diode SMD ED 98 diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED 1/Diode SMD ED 98
2007 - 6R099

Abstract: ipb60r099cpa PG-TO263-3-2 IPB60R099 6R099A
Text: converters for Automotive Applications Type IPB60R099CPA Package PG-TO263-3-2 Marking 6R099A PG-TO263-3-2 , diode switching characteristics Rev. 2.0 page 8 2007-08-10 IPB60R099CPA PG-TO263-3-2


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PDF IPB60R099CPA IPB60R099CPA PG-TO263-3-2 6R099A PG-TO263-3-2 6R099 IPB60R099
2010 - PG-TO247

Abstract: ipw60r075cpa IPB60R099CPA IPB60R199CPA IPI60R099CPA
Text: IPI60R099CPA IPP60R099CPA IPW60R045CPA IPW60R075CPA IPW60R099CPA Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 Bare Die PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 PG-TO247-3-41 Dear


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PDF IPW60R075CPA PG-TO247-3 6R075PA PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247 ipw60r075cpa IPB60R099CPA IPB60R199CPA IPI60R099CPA
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