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Part Manufacturer Description Datasheet Download Buy Part
VS-30CTQ045-1HM3 Vishay Semiconductors DIODE SCHOTTKY 45V 15A TO262
VS-40CTQ150-1-M3 Vishay Semiconductors DIODE SCHOTTKY 150V 20A TO262
VS-43CTQ100-1-M3 Vishay Semiconductors DIODE SCHOTTKY 100V 20A TO262
VS-MBR1535CT-1-M3 Vishay Semiconductors DIODE SCHOTTKY 35V 15A TO262
VS-MBR2080CT-1-M3 Vishay Semiconductors DIODE SCHOTTKY 80V 10A TO262
VS-MBR4045CT-1PBF Vishay Semiconductors DIODE SCHOTTKY 45V 20A TO262

PG-TO262-3 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO262-3 • Ultra low , Package Marking SPI08N80C3 PG-TO262-3 08N80C3 Maximum ratings, at T j=25 ° unless , , repetitive t AR2), 3 ) E AR I D=8 A, V DD=50 V 0.2 Avalanche current, repetitive t AR2), 3 ) I AR


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PDF SPI08N80C3 PG-TO262-3 08N80C3
2007 - Not Available

Abstract: No abstract text available
Text: V DS R DS(on),max ID 25 6.2 50 V m: A PG-TO262-3 PG-TO220- 3 Type IPI06N03LA IPP06N03LA Package PG-TO262-3 PG-TO220- 3 Marking 06N03LA 06N03LA Maximum ratings, at T j=25 °C, unless , IPI06N03LA, IPP06N03LA PG-TO262-3 : Outline PG-TO220-3-2: Outline Packaging Rev. 1.9 page 8 , ) Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 91 See figure 3 3 ) 4 , nC 6) See figure 16 for gate charge parameter definition Rev. 1.9 page 3 2007-08-28


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PDF IPI06N03LA, IPP06N03LA PG-TO262-3 PG-TO220-3 IPI06N03LA PG-TO262-3 06N03LA 06N03LA
2011 - Not Available

Abstract: No abstract text available
Text: €¢ Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 PG-TO262-3 Type Package Marking IPI020N06N PG-TO262-3 020N06N Maximum ratings, at T j=25 ° unless , Tj [°C] Rev.2.2 page 7 2012-12-20 IPI020N06N Package Outline Rev.2.2 PG-TO262-3 , 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3 ) See figure 13 , ,ext= 3 W ns Gate Charge Characteristics5) V DD=30 V, I D=100 A, V GS=0 to 10 V nC


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PDF IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N
2007 - IPP05N03LA

Abstract: No abstract text available
Text: ),max ID 25 4.9 80 V m: A PG-TO262-3 PG-TO220- 3 Type IPI05N03LA IPP05N03LA Package PG-TO262-3 PG-TO220- 3 Marking 05N03LA 05N03LA Maximum ratings, at T j=25 °C, unless otherwise specified , IPI05N03LA, IPP05N03LA PG-TO262-3 : Outline PG-TO220-3-2: Outline Packaging Rev. 1.9 page 8 , limited by bondwire; with an R thJC=1.6 K/W the chip is able to carry 108 See figure 3 3 ) 4) T j,max , figure 16 for gate charge parameter definition Rev. 1.9 page 3 2007-08-29 IPI05N03LA


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PDF IPI05N03LA, IPP05N03LA PG-TO262-3 PG-TO220-3 IPI05N03LA PG-TO262-3 05N03LA 05N03LA IPP05N03LA
2007 - 14N03LA

Abstract: 14N03
Text: V DS R DS(on),max ID 25 13.9 30 V m: A PG-TO262-3 PG-TO220- 3 Type IPI14N03LA IPP14N03LA Package PG-TO262-3 PG-TO220- 3 Marking 14N03LA 14N03LA Maximum ratings, at T j=25 °C, unless , , IPP14N03LA PG-TO262-3 : Outline PG-TO220-3-2: Outline Packaging Rev. 1.9 page 8 2007-08-28 , ) Current is limited by bondwire; with an R thJC=3.2 K/W the chip is able to carry 45 See figure 3 3 , page 3 2007-08-28 IPI14N03LA, IPP14N03LA 1 Power dissipation P tot=f(T C) 2 Drain current I D=f


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PDF IPI14N03LA, IPP14N03LA PG-TO262-3 PG-TO220-3 IPI14N03LA PG-TO262-3 14N03LA 14N03LA 14N03
2008 - 08N80C3

Abstract: 08N80 08n80c SPI08N80C3 JESD22 diode d51
Text: applications · Pb-free lead plating; RoHS compliant PG-TO262-3 · Ultra low gate charge · Ultra low , PG-TO262-3 08N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol , Definition of diode switching characteristics Rev. 2.9 page 8 2008-10-15 SPI08N80C3 PG-TO262-3 , =1.6 A, V DD=50 V 340 Avalanche energy, repetitive t AR2), 3 ) E AR I D=8 A, V DD=50 V 0.2 Avalanche current, repetitive t AR2), 3 ) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage


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PDF SPI08N80C3 PG-TO262-3 08N80C3 08N80C3 08N80 08n80c SPI08N80C3 JESD22 diode d51
2011 - PG-TO262-3

Abstract: No abstract text available
Text: to IEC61249-2-21 PG-TO262-3 1) Product Summary VDS RDS(on),max ID QOSS QG(0V.10V) 60 2.0 120 V mW A nC nC 119 106 Type IPI020N06N Package PG-TO262-3 Marking 020N06N Maximum ratings , Q gate 50 Tj [°C] Rev.2.2 page 7 2012-12-20 IPI020N06N Package Outline PG-TO262-3 , ) Avalanche energy, single pulse3) Gate source voltage 1) 2) 3 ) 4) Value 120 120 29 480 420 ±20 Unit A I D,pulse E AS V GS T C=25 °C I D=100 A, R GS=25 W mJ V J-STD20 and JESD22 See figure 3 for


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PDF IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N 50K/W PG-TO262-3
2005 - sp*20n60c3

Abstract: spp20n60 spp20n60c3
Text: VDS Tjmax · · · G 1 G 3 G-TO220 · · 1 · 2 3 P-TO220-3-31 · · G G-TO220 G PG-TO262-3 G SP000216354 TC TC tp Tjmax VDD Tjmax EAR , . 2.7 2005-10-31 3 Transconductance g fs V DS Input capacitance Ciss V GS , I Rev. 2.7 5 10 31 3 TC TC Ptot Ptot Ptot TC TC VDS TC 10 TC , = 0.1 ms tp = 1 ms DC 10 1 10 2 10 V VDS 3 VDS 5 10 31 tp tp tp


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PDF G-TO220 P-TO220-3-31 PG-TO262-3 SP000216354 SPP20N60C3 SPI20N60C3, SPA20N60C3 PG-TO220-3-1, PG-TO220-3-21 sp*20n60c3 spp20n60 spp20n60c3
2010 - 07N65C3

Abstract: PG-TO-220-3 PG-TO220-3 SPA07N65C3 SPI07N65C3 SPP07N65C3 07N65
Text: PG-TO220 Marking 07N65C3 SPI07N65C3 PG-TO262-3 07N65C3 SPA07N65C3 PG-TO220- 3 07N65C3 , SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO262-3 , PG-TO262-3 (I²-PAK) Rev. 1.92 Page 14 2010-12-21 , · Periodic avalanche rated PG-TO220- 3 0.6 ID · New revolutionary high voltage , · High peak current capability 1 · Improved transconductance 2 3 1 23 P-TO220 , area 3 ) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C


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PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3 SPP07N65C3 07N65C3 PG-TO-220-3 PG-TO220-3 SPA07N65C3 SPI07N65C3 SPP07N65C3 07N65
1999 - 11n60s5

Abstract: No abstract text available
Text: capacitances · Improved transconductance P-TO220-3-1 VDS RDS(on) ID PG-TO262-3 600 0.38 11 V A , Parameter PG-TO220-3-1 Q67040-S4198 PG-TO262-3 Q67040-S4338 Marking 11N60S5 11N60S5 Symbol ID , 30 Unit S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 3 ) Co(er) energy , charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.4 Page 3 2005-06-09 , 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter


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PDF SPP11N60S5 SPI11N60S5 P-TO220-3-1 PG-TO262-3 PG-TO220-3-1 SPI11N60S5 PG-TO220-3-1 Q67040-S4198 PG-TO262-3 11n60s5
1999 - 07N60S5

Abstract: No abstract text available
Text: ) ID PG-TO262-3 600 0.6 7.3 V A PG-TO220-3-1 2 1 23 Type Package Ordering , PG-TO262-3 Q67040-S4328 07N60S5 07N60S5 Symbol ID Value Unit Continuous drain current TC = , =0V, V DS=25V, f=1MHz Effective output capacitance, 3 ) Co(er) energy related Effective output , Page 3 2005-06-09 SPP07N60S5 SPI07N60S5 Electrical Characteristics , at Tj = 25 °C, unless , 10 10 1 10 2 TC 10 V VDS 3 3 Typ. output characteristic ID = f (VDS); Tj


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PDF SPP07N60S5 SPI07N60S5 P-TO220-3-1 PG-TO262-3 PG-TO220-3-1 SPI07N60S5 PG-TO220-3-1 Q67040-S4172 PG-TO262-3 07N60S5
2005 - 07n65c3

Abstract: PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A
Text: PG-TO220 Marking 07N65C3 SPI07N65C3 PG-TO262-3 07N65C3 SPA07N65C3 PG-TO220- 3 07N65C3 , -220-3 (FullPAK) Rev. 1.91 Page 13 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO262-3 , PG-TO262-3 (I²-PAK) Rev. 1.91 Page 14 2009-07-23 SPP07N65C3, SPI07N65C3 SPA07N65C3 Rev , · Periodic avalanche rated PG-TO220- 3 0.6 ID · New revolutionary high voltage , · High peak current capability 1 · Improved transconductance 2 3 1 23 P-TO220


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PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3 SPP07N65C3 07n65c3 PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A
2007 - PG-TO262-3

Abstract: smd 7027 IPI03N03LA PG-TO-262-3
Text: V DS R DS(on),max ID 25 3 80 V m: A PG-TO262-3 PG-TO220- 3 Type IPI03N03LA IPP03N03LA Package PG-TO262-3 PG-TO220- 3 Marking 03N03LA 03N03LA Maximum ratings, at T j=25 °C, unless , 2007-08-29 IPI03N03LA, IPP03N03LA PG-TO262-3 : Outline PG-TO220-3-2: Outline Packaging Rev. 1.9 , ) Current is limited by bondwire; with an R thJC=1 K/W the chip is able to carry 175 A. See figure 3 T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V 3 ) 4) 5) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy


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PDF IPI03N03LA, IPP03N03LA PG-TO262-3 PG-TO220-3 IPI03N03LA PG-TO262-3 03N03LA 03N03LA smd 7027 PG-TO-262-3
2007 - to220 pcb footprint

Abstract: to262 pcb footprint 04N03LA diode kv 1236 IPI04N03LA IPP04N03LA JESD22 PG-TO220-3 PG-TO262-3
Text: R DS(on) product (FOM) · Very low on-resistance R DS(on) PG-TO262-3 · Superior thermal resistance PG-TO220- 3 · 175 °C operating temperature · dv /dt rated · Pb-free lead plating; RoHS compliant Type Package Marking IPI04N03LA PG-TO262-3 04N03LA IPP04N03LA PG-TO220- 3 , ] Rev. 1.9 page 7 2007-08-29 IPI04N03LA, IPP04N03LA PG-TO262-3 : Outline PG-TO220 , thJC=1.4 K/W the chip is able to carry 125 3 ) See figure 3 4) T j,max=150 °C and duty cycle


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PDF IPI04N03LA, IPP04N03LA PG-TO262-3 PG-TO220-3 IPI04N03LA 04N03LA to220 pcb footprint to262 pcb footprint 04N03LA diode kv 1236 IPI04N03LA IPP04N03LA JESD22 PG-TO220-3 PG-TO262-3
2007 - Not Available

Abstract: No abstract text available
Text: Package PG-TO262-3 PG-TO220- 3 Marking 11N03LA 11N03LA Product Summary V DS R DS(on),max ID 25 11.5 30 V m: A PG-TO262-3 PG-TO220- 3 Maximum ratings, at T j=25 °C, unless otherwise specified , PG-TO262-3 : Outline IPP11N03LA PG-TO220-3-2: Outline Packaging Rev. 1.6 page 8 2007-08-28 , ) Current is limited by bondwire; with an R thJC=2.9 K/W the chip is able to carry 50 See figure 3 3 ) 4 , page 3 2007-08-28 IPI11N03LA 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V


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PDF IPI11N03LA IPP11N03LA IPI11N03LA IPP11N03LA PG-TO262-3 PG-TO220-3 11N03LA 11N03LA PG-TO262-3 PG-TO220-3
2008 - d51a

Abstract: PG-TO262-3
Text: Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 0.65 45 V nC PG-TO262-3 CoolMOSTM 800V , clamp forward ) Type SPI08N80C3 Package PG-TO262-3 Marking 08N80C3 Maximum ratings, at T j , characteristics Rev. 2.91 page 8 2011-09-27 SPI08N80C3 PG-TO262-3 : Outline Dimensions in mm , =100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2), 3 ) Avalanche current, repetitive t AR2), 3 ) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I


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PDF SPI08N80C3 PG-TO262-3 08N80C3 d51a PG-TO262-3
2011 - 029N06N

Abstract: ipi029n
Text: to IEC61249-2-21 PG-TO262-3 1) Product Summary VDS RDS(on),max ID QOSS QG(0V.10V) 60 2.9 100 V mW A nC nC 65 56 Type IPI029N06N Package PG-TO262-3 Marking 029N06N Maximum ratings , Package Outline PG-TO262-3 Rev.2.0 page 8 2012-06-04 IPI029N06N Published by Infineon , vertical in still air. 3 ) See figure 3 for more detailed information 4) See figure 13 for more detailed , oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=100 A, R G= 3 W V GS=0 V, V DS=30 V, f =1 MHz


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PDF IPI029N06N IEC61249-2-21 PG-TO262-3 029N06N 50K/W 029N06N ipi029n
2011 - IPI029N06

Abstract: 029N06N
Text: to IEC61249-2-21 PG-TO262-3 1) Product Summary VDS RDS(on),max ID QOSS QG(0V.10V) 60 2.9 100 V mW A nC nC 65 56 Type IPI029N06N Package PG-TO262-3 Marking 029N06N Maximum ratings , Outline PG-TO262-3 Rev.2.2 page 8 2012-12-20 IPI029N06N Published by Infineon Technologies , ) Avalanche energy, single pulse3) Gate source voltage 1) 2) 3 ) 4) Value 100 100 24 400 110 ±20 Unit A I D,pulse E AS V GS T C=25 °C I D=100 A, R GS=25 W mJ V J-STD20 and JESD22 See figure 3 for


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PDF IPI029N06N IEC61249-2-21 PG-TO262-3 029N06N 50K/W IPI029N06 029N06N
2011 - ipi020n

Abstract: No abstract text available
Text: to IEC61249-2-21 PG-TO262-3 1) Product Summary VDS RDS(on),max ID QOSS QG(0V.10V) 60 2.0 120 V mW A nC nC 119 106 Type IPI020N06N Package PG-TO262-3 Marking 020N06N Maximum ratings , [°C] Rev.2.0 page 7 2012-06-04 IPI020N06N Package Outline PG-TO262-3 Rev.2.0 page , . PCB is vertical in still air. 3 ) See figure 3 for more detailed information 4) See figure 13 for more , nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=100 A, R G= 3 W V GS=0 V, V DS


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PDF IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N 50K/W ipi020n
2011 - Not Available

Abstract: No abstract text available
Text: €¢ Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 PG-TO262-3 Type Package Marking IPI029N06N PG-TO262-3 029N06N Maximum ratings, at T j=25 ° unless , .2.2 PG-TO262-3 page 8 2012-12-20 IPI029N06N Published by Infineon Technologies AG 81726 Munich , 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3 ) See figure 13 , ,ext= 3 W ns Gate Charge Characteristics5) V DD=30 V, I D=100 A, V GS=0 to 10 V nC


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PDF IPI029N06N IEC61249-2-21 PG-TO262-3 029N06N
1999 - 20N65C3

Abstract: 20n65 SPP20N65C3 20N65C
Text: 3 V DS RDS(on) ID PG-TO262-3 PG-TO220-3-31 650 0.19 20.7 V A PG-TO220-3-1 Type , -3-1 Q67040-S4556 PG-TO220-3-31 SP000216362 PG-TO262-3 Q67040-S4560 Marking 20N65C3 20N65C3 20N65C3 Symbol ID , ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3 ) Soldering , 3 0.1 0.16 0.43 0.54 3.9 V V(BR)DS VGS=0V, ID=7A 2.1 - µA 1 100 100 0.19 nA , 80% VDSS. Page 3 Rev. 2.6 2005-10-31 SPP20N65C3, SPA20N65C3 SPI20N65C3 Electrical


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PDF SPP20N65C3, SPA20N65C3 SPI20N65C3 P-TO220-3-31 PG-TO262-3 PG-TO220-3-31 PG-TO220-3-1 SPP20N65C3 SPI20N65C3 20N65C3 20n65 20N65C
1999 - Not Available

Abstract: No abstract text available
Text: effective capacitances · Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220-3-31 PG-TO262-3 560 0.6 7.6 V A PG-TO220-3-1 · PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 , PG-TO262-3 Q67040-S4568 PG-TO220-3-31 SP000216306 Marking 08N50C3 08N50C3 08N50C3 Maximum Ratings , , junction - ambient, FullPAK Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3 , 62 80 260 °C K/W Values typ. 600 3 0.5 0.5 1.5 1.2 max. 3.9 500 2.1 - Unit V V(BR)DS VGS


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PDF SPP08N50C3, SPI08N50C3 SPA08N50C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 PG-TO-220-3-31: SPP08N50C3
1999 - 21n50c3

Abstract: PG-TO262 Q67040-S4565 SPP21N50C3 SPI21N50C3 21N50C
Text: isolated package (2500 VAC; 1 minute) P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220-3-31 PG-TO262-3 560 0.19 21 V A PG-TO220-3-1 Type SPP21N50C3 SPI21N50C3 SPA21N50C3 Package PG-TO262-3 Ordering Code Marking 21N50C3 21N50C3 21N50C3 PG-TO220-3-1 Q67040-S4565 Q67040-S4564 , cooling area 3 ) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 4) Electrical , Unit K/W °C Values typ. 600 3 0.1 0.16 0.54 0.53 max. 3.9 500 2.1 - Unit V V(BR)DS VGS


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PDF SPP21N50C3 SPI21N50C3, SPA21N50C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 SPI21N50C3 21n50c3 PG-TO262 Q67040-S4565 21N50C
2006 - to220 pcb footprint

Abstract: 11n60c3 TRANSISTOR SMD MARKING CODE 7A SPA11N60C3 equivalent SPI11N60C3 TO220 HEATSINK DATASHEET to262 pcb footprint SP000216312 SPD06S60 TRANSISTOR SMD MARKING CODE ag
Text: gate charge · Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 · Extreme dv/dt rated · High peak current capability 1 · Improved transconductance 2 3 P-TO220-3-31 · , Marking SPP11N60C3 PG-TO220- 3 Q67040-S4395 11N60C3 SPI11N60C3 PG-TO262-3 Q67042-S4403 , , device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 3 ) - 35 - , =0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=11A typ. max. 600 - - - 700 - 2.1 3


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PDF SPP11N60C3 SPI11N60C3, SPA11N60C3 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: PG-TO220-3 to220 pcb footprint 11n60c3 TRANSISTOR SMD MARKING CODE 7A SPA11N60C3 equivalent SPI11N60C3 TO220 HEATSINK DATASHEET to262 pcb footprint SP000216312 SPD06S60 TRANSISTOR SMD MARKING CODE ag
2008 - 200n15n

Abstract: IPD200N15N3 IPP200N15N3 G ipp200n15n3
Text: G Package Marking PG-TO263- 3 200N15N PG-TO252- 3 200N15N PG-TO262-3 200N15N PG-TO220- 3 , page 9 2008-05-27 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G PG-TO262-3 Outline IPP200N15N3 G , IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS® 3 Power-Transistor Features · , stg T C=25 °C ±20 150 -55 . 175 55/175/56 V W °C J-STD20 and JESD22 See figure 3 Rev , R thJC R thJA minimal footprint 6 cm2 cooling area 3 ) 1 75 50 K/W IPP200N15N3 G Unit max


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PDF IPB200N15N3 IPD200N15N3 IPI200N15N3 IPP200N15N3 PG-TO263-3 200N15N 200n15n IPP200N15N3 G
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