The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC2656CIFE-L16#TRPBF Linear Technology LTC2656 - Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: TSSOP; Pins: 20; Temperature Range: -40°C to 85°C
LTC2262CUJ-12#TRPBF Linear Technology LTC2262-12 - 12-Bit, 150Msps Ultralow Power 1.8V ADC; Package: QFN; Pins: 40; Temperature Range: 0°C to 70°C
LTC2301CDE#TRPBF Linear Technology LTC2301 - 1-Channel, 12-Bit ADCs with I2C Compatible Interface; Package: DFN; Pins: 12; Temperature Range: 0°C to 70°C
LTC2305IDE#TRPBF Linear Technology LTC2305 - 2-Channel, 12-Bit ADCs with I2C Compatible Interface; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C
LTC2257IUJ-12#TRPBF Linear Technology LTC2257-12 - 12-Bit, 40Msps Ultralow Power 1.8V ADCs; Package: QFN; Pins: 40; Temperature Range: -40°C to 85°C
LTC2263CUJ-12#PBF Linear Technology LTC2263-12 - 12-Bit, 25Msps Low Power Dual ADCs; Package: QFN; Pins: 40; Temperature Range: 0°C to 70°C

PG-TO-263-3-2 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - g30t60

Abstract: igbt 1000v 30a S-108 IGB30N60T PG-TO-263-3-2 g30t
Text: IGB30N60T G E PG-TO-263-3-2 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 600V 30A 1.5V 175°C G30T60 PG-TO-263-3-2 Maximum Ratings Parameter Symbol , ® Series IGB30N60T q PG-TO-263-3-2 10 Rev. 2.3 04.03.2009 IGB30N60T q TrenchStop


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PDF IGB30N60T PG-TO-263-3-ntain g30t60 igbt 1000v 30a S-108 IGB30N60T PG-TO-263-3-2 g30t
2007 - g30t

Abstract: G30T60
Text: °C Marking Code G30T60 Package PG-TO-263-3-2 C G E · · · · · PG-TO-263-3-2 Type IGB30N60T , . 07 TrenchStop® Series PG-TO-263-3-2 IGB30N60T q Power Semiconductors 10 Rev. 2.2 Oct


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PDF IGB30N60T G30T60 g30t
2007 - K06N60

Abstract: k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS
Text: temperature - very tight parameter distribution · · · · PG-TO-263-3-2 High ruggedness, temperature , VCE IC Eoff Tj Marking Package 600V 6A 80µJ 150°C K06N60HS PG-TO-263-3-2 , (D=tP/T) Power Semiconductors 1s 11 Rev. 2.3 Oct.07 SKB06N60HS PG-TO-263-3-2


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PDF SKB06N60HS PG-TO-263-3-2 K06N60HS K06N60 k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS
2013 - Not Available

Abstract: No abstract text available
Text: 10A 2.3V 150C Marking G E PG-TO-263-3-2 Package K10N60 PG-TO-263-3-2 , function of pulse width (D = tp / T) 10 Rev. 2.3 12.06.2013 SKB10N60A PG-TO-263-3-2 11


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PDF SKB10N60A
2007 - gb15n120

Abstract: PG-TO-263-3-2 SGB15N120
Text: SGB15N120 Fast IGBT in NPT-technology C · 40% lower Eoff compared to previous generation · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter - SMPS · NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability · Pb-free lead plating; RoHS compliant G E PG-TO-263-3-2 (D²-PAK , 15A 1.5mJ 150°C GB15N120 PG-TO-263-3-2 Parameter Symbol Value Unit


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PDF SGB15N120 PG-TO-263-3-2 GB15N120 gb15n120 PG-TO-263-3-2 SGB15N120
2009 - G50T60

Abstract: IGB50N60T IKW50N60T PG-TO263-3-2 PG-TO-263-3-2
Text: ://www.infineon.com/igbt/ Type IGB50N60T G E PG-TO-263-3-2 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600 V 50 A 1.5 V 175 °C G50T60 PG-TO-263-3-2 Maximum Ratings


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PDF IGB50N60T G50T60 IGB50N60T IKW50N60T PG-TO263-3-2 PG-TO-263-3-2
2007 - G10N60A

Abstract: g10n60 G10N60A DATASHEET PG-TO-263-3-2 PG-TO263-3-2 SGB10N60A S025A
Text: SGB10N60A Fast IGBT in NPT-technology C · 75% lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time ­ 10 µs G E · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-263-3-2 , VCE IC VCE(sat) Tj Marking Package 600V 10A 2.3V 150°C G10N60A PG-TO-263-3-2


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PDF SGB10N60A PG-TO-263-3-2 G10N60A G10N60A g10n60 G10N60A DATASHEET PG-TO-263-3-2 PG-TO263-3-2 SGB10N60A S025A
2006 - G15N60

Abstract: PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 G15N60 IGBT
Text: SGB15N60 Fast IGBT in NPT-technology C · 75% lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G E PG-TO-263-3-2 , IC VCE(sat) Tj Marking Package 600V 15A 2.3V 150°C G15N60 PG-TO-263-3-2


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PDF SGB15N60 PG-TO-263-3-2 G15N60 G15N60 PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 G15N60 IGBT
2006 - PG-TO263-3-2

Abstract: No abstract text available
Text: (reflow soldering, MSL1) Tj , Tstg -55.+150 245 °C 2 1 C G E PG-TO-263-3-2 (D²-PAK) (TO-263AB) VCE 1200V IC 15A Eoff 1.5mJ Tj 150°C Marking Package G15N120 PG-TO-263-3-2 Symbol


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PDF SGB15N120 SGB15N120 PG-TO263-3-2
2007 - gb07n120

Abstract: PG-TO-263-3-2 SGB07N120 PG-TO263-3-2
Text: SGB07N120 Fast IGBT in NPT-technology C · lower Eoff compared to previous generation · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter - SMPS · NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G E PG-TO-263-3-2 (D²-PAK) 1 · Qualified according to JEDEC for target , Package GB07N120 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Value Unit


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PDF SGB07N120 PG-TO-263-3-2 GB07N120 PG-TO-263-3-2 SGB07N120 PG-TO263-3-2
2009 - g30n60

Abstract: G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ
Text: SGB30N60 Fast IGBT in NPT-technology C · 75% lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G E PG-TO-263-3-2 , PG-TO-263-3-2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC


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PDF SGB30N60 PG-TO-263-3-2 O-263AB) G30N60 g30n60 G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ
2006 - Not Available

Abstract: No abstract text available
Text: PG-TO-263-3-2 (TO-263AB) 1 • Qualified according to JEDEC for target applications • Pb-free , 150°C G10N60 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Collector-emitter voltage


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PDF SGB10N60A PG-TO-263-3-2 O-263AB) G10N60 PG-TO-263ntain
2006 - G06N60

Abstract: 25E-4 PG-TO-263-3-2 PG-TO263-3-2 SGB06N60
Text: SGB06N60 Fast IGBT in NPT-technology · 75% lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability C G E PG-TO-263-3-2 , °C G06N60 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC


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PDF SGB06N60 PG-TO-263-3-2 O-263AB) G06N60 G06N60 25E-4 PG-TO-263-3-2 PG-TO263-3-2 SGB06N60
2007 - k06t60

Abstract: igbt k06t60 diode 400V 6A IKB06N60T PG-TO-263-3-2
Text: E PG-TO-263-3-2 Tj,max Marking Package 175°C K06T60 PG-TO-263-3-2 Maximum , IKB06N60T p PG-TO-263-3-2 Power Semiconductors 11 Rev. 2.3 Oct. 07 IKB06N60T p


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PDF IKB06N60T k06t60 igbt k06t60 diode 400V 6A IKB06N60T PG-TO-263-3-2
2007 - 200nC

Abstract: G50T60 IGB50N60T
Text: =25°C 1.5 V Tj,max 175 °C Marking G50T60 Package PG-TO-263-3-2 C G E · · · · · · PG-TO-263-3-2


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PDF IGB50N60T G50T60substances. 200nC G50T60
2006 - g02n60

Abstract: SGB02N60 PG-TO-263-3-2 PG-TO263-3-2
Text: SGB02N60 Fast IGBT in NPT-technology C · 75% lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G E PG-TO-263-3-2 , °C G02N60 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC


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PDF SGB02N60 PG-TO-263-3-2 O-263AB) G02N60 g02n60 SGB02N60 PG-TO-263-3-2 PG-TO263-3-2
2013 - Not Available

Abstract: No abstract text available
Text: =100°C VCE(sat),Tj=25°C 600V 6A 1.5V C G E PG-TO-263-3-2 Tj,max Marking Package 175C K06T60 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Collector-emitter , ® TrenchStop series IKB06N60T p PG-TO-263-3-2 11 Rev. 2.4 12.06.2013 IKB06N60T p Â


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PDF IKB06N60T
2006 - G30N60

Abstract: G30N60 IGBT JESD-022
Text: SGB30N60 Fast IGBT in NPT-technology · 75% lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-263-3-2 , °C Marking G30N60 Package PG-TO-263-3-2 Symbol VCE IC Value 600 41 30 Unit V A ICpul s VGE EAS


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PDF SGB30N60 PG-TO-263-3-2 O-263AB) SGB30N60 G30N60 G30N60 IGBT JESD-022
2007 - GB02N120

Abstract: 15v 60w smps igbt 100V 5A smps 10w 12V PG-TO-263-3-2 PG-TO263-3-2 SGB02N120
Text: SGB02N120 Fast IGBT in NPT-technology C · Lower Eoff compared to previous generation · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter - SMPS · NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G E PG-TO-263-3-2 1 · Qualified according to JEDEC for target , 150°C GB02N120 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Value Unit


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PDF SGB02N120 PG-TO-263-3-2 GB02N120 GB02N120 15v 60w smps igbt 100V 5A smps 10w 12V PG-TO-263-3-2 PG-TO263-3-2 SGB02N120
2006 - G04N60

Abstract: PG-TO263-3-2 PG-TO-263-3-2 SGB04N60
Text: °C Tj Marking 600V 4A 2.3V 150°C G04N60 C G E PG-TO-263-3-2 (D²-PAK) (TO-263AB) Package PG-TO-263-3-2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC


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PDF SGB04N60 G04N60 PG-TO-263-3-2 O-263AB) G04N60 PG-TO263-3-2 PG-TO-263-3-2 SGB04N60
2007 - k10n60

Abstract: PG-TO-263-3-2 SKB10N60A diode smd marking 5P
Text: VCE IC VCE(sat) Tj 600V 10A 2.3V 150°C Marking G E PG-TO-263-3-2 Package K10N60 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Collector-emitter voltage , impedance as a function of pulse width (D = tp / T) 10 Rev. 2.2 Oct. 07 SKB10N60A PG-TO-263-3-2


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PDF SKB10N60A k10n60 PG-TO-263-3-2 SKB10N60A diode smd marking 5P
K06T60

Abstract: No abstract text available
Text: ://www.infineon.com/igbt/ • • • • • Type IKB06N60T VCE 6A 1.5V G E PG-TO-263-3-2 Tj,max Marking Package 175°C K06T60 PG-TO-263-3-2 IC;Tc=100°C VCE(sat),Tj , Rev. 2.3 Oct. 07 ® TrenchStop series IKB06N60T p PG-TO-263-3-2 Power Semiconductors


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PDF IKB06N60T K06T60
2006 - G15N60HS

Abstract: G15N60H
Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • PG-TO-263-3-2 , 15A 200µJ 150°C G15N60HS PG-TO-263-3-2 Parameter Symbol Value


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PDF SGB15N60HS PG-TO-263-3-2 O-263AB) G15N60ces. G15N60HS G15N60H
2006 - G15N60HS

Abstract: G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2
Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C · 30% lower Eoff compared to previous generation · Short circuit withstand time ­ 10 µs G E · Designed for operation above 30 kHz · NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution · · · · PG-TO-263-3-2 (D²-PAK) (TO-263AB) High , °C G15N60HS PG-TO-263-3-2 Parameter Symbol Value Collector-emitter voltage VCE DC


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PDF SGB15N60HS PG-TO-263-3-2 O-263AB) G15N60HS G15N60HS G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2
2006 - g20n60

Abstract: igbt 400V 20A PG-TO-263-3-2 SGB20N60
Text: SGB20N60 Fast IGBT in NPT-technology C · 75% lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G E PG-TO-263-3-2 , °C G20N60 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC


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PDF SGB20N60 PG-TO-263-3-2 O-263AB) G20N60 g20n60 igbt 400V 20A PG-TO-263-3-2 SGB20N60
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