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Part Manufacturer Description Datasheet Download Buy Part
LTC4301LCDD8#PBF Linear Technology IC SPECIALTY INTERFACE CIRCUIT, DSO8, 3 X 3 MM, PLASTIC, MO-229WEED-1, DFN-8, Interface IC:Other
LTC4301LIDD8#PBF Linear Technology IC SPECIALTY INTERFACE CIRCUIT, DSO8, 3 X 3 MM, PLASTIC, MO-229WEED-1, DFN-8, Interface IC:Other
LTC4301LIDD8 Linear Technology IC SPECIALTY INTERFACE CIRCUIT, DSO8, 3 X 3 MM, PLASTIC, MO-229WEED-1, DFN-8, Interface IC:Other
LTC4301LCDD8 Linear Technology IC SPECIALTY INTERFACE CIRCUIT, DSO8, 3 X 3 MM, PLASTIC, MO-229WEED-1, DFN-8, Interface IC:Other
LT3591EDDB#TR Linear Technology IC LED DISPLAY DRIVER, DSO8, 3 X 2 MM, 0.75 MM HEIGHT, MO-229WECD-1, DFN-8, Display Driver
LMH6552SD Texas Instruments OP-AMP, DSO8, LLP-8

PG-DSO8-36 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - 300n3s

Abstract:
Text: resistance R DS(on) V GS=4.5 V, I D=6.1 A - 36 45 m V GS=10 V, I D=7.2 A - 25 , =0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D= 3.6 A, R G=2.7 pF ns Gate Charge Characteristics 4) V DD=15 V, I D= 3.6 A, V GS=0 to 5 V nC V nC Reverse Diode Diode continous , 3.6 V 3.4 V 50 4.2 V 40 4.5 V 5V 30 10 V 2 20 2.8 V 1 10 2.6 V 0 , GS=f(Q gate); I D= 3.6 A pulsed parameter: T j(start) parameter: V DD 10 12 15 V 10


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PDF BSO300N03S 300N3S 300n3s 300n3 BSO300N03S JESD22 marking d36 PG-DSO-8-43 Footprint
2007 - 350n3

Abstract:
Text: 4.5 V 10 100 3.4 V 3.6 V 3.8 V 4V 3.6 V 80 R DS(on) [m] I D [A] 8 , ); I D=1 mA 36 V GS 34 Qg 32 V BR(DSS) [V] 30 28 V g s(th) 26 24 Q g


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PDF BSO350N03 IEC61249-2-21 350N3 350n3 BSO350N03 IEC61249-2-21 JESD22
2007 - 300n3s

Abstract:
Text: =6.1 A - 36 45 m V GS=10 V, I D=7.2 A - 25 30 - 0.6 - 7 14 , MHz V DD=15 V, V GS=10 V, I D= 3.6 A, R G=2.7 pF ns Gate Charge Characteristics 4) V DD=15 V, I D= 3.6 A, V GS=0 to 5 V nC V nC Reverse Diode Diode continous forward current , 3.1 V 3 R DS(on) [m] 3.2 V 5 3V 4V 3.8 V 3.6 V 3.4 V 50 4.2 V 40 , Typ. gate charge I AS=f(t AV); R GS=25 V GS=f(Q gate); I D= 3.6 A pulsed parameter: T j(start


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PDF BSO300N03S IEC61249-2-21 300N3S 300n3s BSO300 BSO300N03S IEC61249-2-21 JESD22
2006 - BSO350N03

Abstract:
Text: 3.4 V 3.6 V 3.8 V 4V 3.6 V 80 R DS(on) [m] I D [A] 8 3.4 V 6 3.2 V , Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36 V GS 34


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PDF BSO350N03 350N3 BSO350N03 JESD22
2007 - BSO350N03

Abstract:
Text: parameter: V GS parameter: V GS 12 120 10 V 4.5 V 10 100 3.4 V 3.6 V 3.8 V 4V 3.6 V 80 R DS(on) [m] I D [A] 8 3.4 V 6 3.2 V 4 60 4.2 V 4.5 V 5V 40 , V BR(DSS)=f(T j); I D=1 mA 36 V GS 34 Qg 32 V BR(DSS) [V] 30 28 V g s(th


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PDF BSO350N03 350N3 BSO350N03 JESD22
2009 - TLE4253GS

Abstract:
Text: No file text available


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PDF TLE4253 TLE4253GS TLE4253GS tle4253e TLE4253 4253E C167 JESD51-2 TLE 4253 TLE4271-2
1999 - 150N3

Abstract:
Text: =150 °C 9.1 7.3 36 82 6 ±20 1.4 mJ kV/µs V W °C steady state 7.6 6.1 A Unit Rev. 1.3 page 1 , /dt =400 A/µs 0.75 2 36 1 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS , parameter: V GS 30 3.4 V 3.6 V 16 3.3 V 3.2 V 3.8 V 4.5 V 20 R DS(on) [m ] 12 4V 4.2 V , waveforms 36 V GS 34 32 30 Qg V BR(DSS) [V] 28 26 24 22 20 -60 -20 20 60 100 140 180 V g


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PDF BSO150N03 Q67042-S4215 150N3 150N3 BSO150N03
2006 - XCV300-4BGG352C

Abstract:
Text: 9.7 - 1 - 18 36 - S Gate resistance RG Transconductance g fs 1 , 25 10 V 4.5 V 3.4 V 25 20 3.3 V 3.6 V R DS(on) [m] 20 I D [A] 3.2 V 15 3.1 , Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36 V GS 34


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PDF BSO104N03S 104N3S XCV300-4BGG352C 104N3S BSO104N03S JESD22
2006 - 200n3

Abstract:
Text: DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 12 60 10 V 10 3.6 V , voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36 V GS 34 Qg 32 V BR


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PDF BSO200N03S 200N3S 200n3 BSO200N03S JESD22
2006 - 119n3s

Abstract:
Text: 20 30 10 V 3.3 V 4.5 V 25 3.6 V 3.4 V 15 3.2 V R DS(on) [m] 20 I D [A , Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36 V GS 34 Qg 32 V BR(DSS) [V


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PDF BSO119N03S 119N3S 119n3s BSO119N03S JESD22
2007 - 300n3s

Abstract:
Text: resistance R DS(on) V GS=4.5 V, I D=6.1 A - 36 45 m V GS=10 V, I D=7.2 A - 25 , =0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D= 3.6 A, R G=2.7 pF ns Gate Charge Characteristics 4) V DD=15 V, I D= 3.6 A, V GS=0 to 5 V nC V nC Reverse Diode Diode continous , 3.6 V 3.4 V 50 4.2 V 40 4.5 V 5V 30 10 V 2 20 2.8 V 1 10 2.6 V 0 , GS=f(Q gate); I D= 3.6 A pulsed parameter: T j(start) parameter: V DD 10 12 15 V 10


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PDF BSO300N03S 300N3S 300n3s BSO300N03S JESD22
2006 - 94N3S

Abstract:
Text: 25 10 V 4.5 V 25 3.4 V 20 3.3 V 3.6 V 20 15 R DS(on) [m] I D [A , ] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36


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PDF BSO094N03S 94N3S 94N3S BSO094N03S JESD22
1999 - 300n3s

Abstract:
Text: 30 1.2 - 1.6 0.1 2 1 V µA - 10 10 36 25 0.6 14 100 100 45 30 S nA m RG g fs , DS=0.1 V, V GS=0 to 5 V V DD=15 V, V GS=0 V V DD=15 V, I D= 3.6 A, V GS=0 to 5 V 1.3 0.7 0.9 1.5 3.5 , GS=10 V, I D= 3.6 A, R G=2.7 V GS=0 V, V DS=15 V, f =1 MHz 450 160 23 2.3 2.2 9.3 1.6 600 210 34 3.4 , D); T j=25 °C parameter: V GS 80 70 3.3 V 7 6 5 3.2 V 60 50 3.4 V 3.6 V 3.8 V , characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 10 14 Typ. gate charge V GS=f(Q gate); I D= 3.6 A


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PDF BSO300N03S Q67042-S4205 300N3S 300n3s
2009 - 064n3s

Abstract:
Text: parameter: V GS parameter: V GS 60 12 10 V 3.4 V 4.5 V 50 10 3.6 V 3.8 V , breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36 V GS 34 Qg 32


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PDF BSO064N03S IEC61249-2-21 064N3S 064n3s 064N3 064n BSO064N03S IEC61249-2-21 JESD22
2007 - 200N3S

Abstract:
Text: )=f(I D); T j=25 °C parameter: V GS parameter: V GS 12 60 10 V 10 3.6 V 3.3 V , voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36 V GS 34 Qg 32 V BR


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PDF BSO200N03S IEC61249-2-21 200N3S 200N3S marking d88 200N3 BSO200N03S IEC61249-2-21 JESD22
2006 - MARKING 150N3

Abstract:
Text: A=25 °C3) I D=9.1 A, R GS=25 I D=9.1 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 9.1 7.3 36 82 6 , GS=0 V, I F=2 A, T j=25 °C V R=12 V, I F=I S, di F/dt =400 A/µs 0.75 2 36 1 V A Q gs Q g(th) Q gd Q , ); T j=25 °C parameter: V GS 30 3.4 V 3.6 V 16 3.2 V 3.8 V 20 R DS(on) [m ] 12 4V 4.2 , waveforms 36 V GS 34 Qg 32 30 V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g


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PDF BSO150N03 150N3 MARKING 150N3 150n3
2012 - TLF4949

Abstract:
Text: 180 300 µA IOUT = 0.3mA 4.4.12 Quiescent Current IQ ­ ­ 3.6 mA IOUT = 100mA 1) VIN = 40V may be only


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PDF TLF4949 TLF4949SJ TLF4949EJ TLF4949 capacitor 100nF 1uF TLF4949E JS-001 TLF4949EJ GPS0118 J500 PG-DSO-8-27
1999 - Q67042-S4217

Abstract:
Text: . drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 120 10 3.6 V 100 3.4 V 3.6 , D=1 mA 16 Gate charge waveforms 36 V GS 34 32 30 Qg V BR(DSS) [V] 28 26 24 22 20


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PDF BSO350N03 Q67042-S4217 350N3 Q67042-S4217
2006 - Not Available

Abstract:
Text: resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 16 40 12 3.4 V 3.6 V 3.8 V 4V 4.2 V 4.5 V 5V 10 V , Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 36 V GS 34 Qg


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PDF BSO072N03S 72N3S
2007 - 150N3

Abstract:
Text: I D,pulse T A=25 °C3) 36 Avalanche energy, single pulse E AS I D=9.1 A, R GS , 2 - - 36 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=4.5 A, R G , DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 20 30 10 V 3.6 V 3.4 V , ] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36


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PDF BSO150N03 150N3 150N3 BSO150N03 JESD22
2006 - C8050

Abstract:
Text: (on)=f(I D); T j=25 °C parameter: V GS 12 3.4 V 50 10 3.6 V 3.8 V 40 8 4V 4.2 V , (T j); I D=1 mA 16 Gate charge waveforms 36 V GS 34 Qg 32 30 V BR(DSS) [V


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PDF BSO064N03S 64N3S C8050
2009 - 8366EV33

Abstract:
Text: voltage (0.6 V). Between input voltages from 8.0 to 36 V the integrated feed forward path provides a fast , 5.2.16 Buck peak over current limit 2.2 ­ 3.6 A ICC=1 A 2) ­ 5.2.17 Bootstrap


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PDF TLE8366 TLE8366EV50 TLE8366EV TLE8366EV33 8366EV33 c.d.m. technology stay TLE8366 TLE8366EV
2009 - 094N3S

Abstract:
Text: 3.4 V 20 3.3 V 3.6 V 20 15 R DS(on) [m] I D [A] 3.2 V 3.1 V 3V 15 , voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36 V GS 34 Qg 32 V BR


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PDF BSO094N03S IEC61249-2-21 094N3S 094N3S BSO094N03S IEC61249-2-21 JESD22
1999 - BSO072N03S

Abstract:
Text: D); T j=25 °C parameter: V GS 16 40 12 3.4 V 3.6 V 3.8 V 4V 4.2 V 4.5 V 5V 10 V 3V 3.2 V , Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 36 V GS 34 32 30


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PDF BSO072N03S Q67042-S4208 72N3S BSO072N03S
2007 - 052N3S

Abstract:
Text: resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 10 50 3.3 V 8 3.4 V 3.6 V 40 3.2 , )=f(T j); I D=1 mA 16 Gate charge waveforms 36 V GS 34 Qg 32 30 V BR(DSS) [V


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PDF BSO052N03S 052N3S 052N3S
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