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PF08134B datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
PF08134B PF08134B ECAD Model Renesas Technology MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone Original PDF

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2004 - GSM repeater circuit

Abstract: PF08134B DCS1800 DCS1900 GSM 900 mhz repeater circuit vapc
Text: PF08134B MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone , DCS & Pout PCS 6: Vdd2 7: Vctl 8: Pin DCS & Pin PCS G: GND PF08134B Absolute Maximum , - - 2 µA Vctl = 3 V Rev.1.01, May 13, 2004, page 2 of 13 PF08134B Electrical , 33.5 dBm, 4% AM modulation at input 50 kHz modulation frequency PF08134B Electrical , frequency PF08134B Electrical Characteristics for DCS1900 band (Tc = 25°C) Test conditions unless


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PDF PF08134B GSM850 DCS1800/1900 REJ03G0075-0101Z GSM850 DCS1800/1900 Class12 DCS1800 DCS1900 GSM repeater circuit PF08134B DCS1800 DCS1900 GSM 900 mhz repeater circuit vapc
2003 - GSM repeater circuit

Abstract: gsm repeater PF08134B GSM 900 mhz repeater circuit GSM repeater power amplifier module MOS FET Power Amplifier Module for DCS 1800 vapc DCS1800 DCS1900
Text: PF08134B MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone , DCS & Pout PCS 6: Vdd2 7: Vctl 8: Pin DCS & Pin PCS G: GND PF08134B Absolute Maximum , V Vctl = 3 V Rev.1, Sep.04.2003, page 2 of 13 PF08134B Electrical Characteristics for , .04.2003, page 3 of 13 Output VSWR = 10 : 1 All phase angles PF08134B Electrical Characteristics for , .04.2003, page 4 of 13 PF08134B Electrical Characteristics for DCS1900 band (Tc = 25°C) Test conditions


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PDF PF08134B GSM850 DCS1800/1900 REJ03G0075-0100Z GSM850 DCS1800/1900 Class12 DCS1800 DCS1900 GSM repeater circuit gsm repeater PF08134B GSM 900 mhz repeater circuit GSM repeater power amplifier module MOS FET Power Amplifier Module for DCS 1800 vapc DCS1800 DCS1900
2004 - VA-PC 10

Abstract: No abstract text available
Text: PF08134B MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone , , 2004, page 1 of 13 PF08134B Absolute Maximum Ratings *1 (Tc = 25°C) Item Supply voltage Supply , 0 V, Vctl = 0.2 V Vapc = 2.2 V Vctl = 3 V Rev.1.01, May 13, 2004, page 2 of 13 PF08134B , Rev.1.01, May 13, 2004, page 3 of 13 PF08134B Electrical Characteristics for DCS1800 band (Tc , - - - dB/V % Rev.1.01, May 13, 2004, page 4 of 13 PF08134B Electrical


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PDF PF08134B GSM850 DCS1800/1900 REJ03G0075-0101Z GSM850 DCS1800/1900 Class12 DCS1800 DCS1900 VA-PC 10
2004 - GSM repeater circuit

Abstract: DCS1800 DCS1900 PF08134B
Text: developed or manufactured by or for Renesas Electronics. PF08134B MOS FET Power Amplifier Module for , G: GND PF08134B Absolute Maximum Ratings *1 (Tc = 25°C) Item Symbol Vdd Supply , .1.01, May 13, 2004, page 2 of 13 PF08134B Electrical Characteristics for GSM850 band (Tc = 25 , 50 kHz modulation frequency PF08134B Electrical Characteristics for DCS1800 band (Tc = 25 , DCS = 0 to 32.5 dBm, 4% AM modulation at input 50 kHz modulation frequency PF08134B


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2004 - Not Available

Abstract: No abstract text available
Text: Electronics. PF08134B MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone , 4: Pout GSM 5: Pout DCS & Pout PCS 6: Vdd2 7: Vctl 8: Pin DCS & Pin PCS G: GND PF08134B , , 2004, page 2 of 13 PF08134B Electrical Characteristics for GSM850 band (Tc = 25°C) Test , PF08134B Electrical Characteristics for DCS1800 band (Tc = 25°C) Test conditions unless otherwise , input 50 kHz modulation frequency PF08134B Electrical Characteristics for DCS1900 band (Tc = 25Â


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