The Datasheet Archive

PF08109B datasheet (3)

Part Manufacturer Description Type PDF
PF08109B Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone Original PDF
PF08109B Renesas Technology MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone Original PDF
PF08109B-TB Samsung Electronics Micro Module Specifications Scan PDF

PF08109B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - PF08109B

Abstract: Hitachi DSA00103 F 915 DCS1800 pf08109
Text: PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE , : GND PF08109B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply , the E-GSM-band (880 MHz to 915 MHz), and the DCS1800-band (1710 MHz to 1785 MHz). 2 PF08109B , , 3 PF08109B Electrical Characteristics for DCS1800 mode (Tc = 25°C) Test conditions unless , Condition DCS DCS = 32.7dBm, = 0 to 32.7dBm PF08109B Characteristic Curves High mode, f =


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PDF PF08109B DCS1800 ADE-208-821C DCS1800 RF-O-12 PF08109B Hitachi DSA00103 F 915 pf08109
2003 - GSM repeater circuit

Abstract: PF08109B dual gsm repeater DCS1800 pf08109
Text: products contained therein. PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band , : Pin DCS G: GND PF08109B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit , .3, Feb. 2001, page 2 of 23 PF08109B Electrical Characteristics for E-GSM mode (Tc = 25°C) Test , , Vtxlo = 0.1V, Vapc GSM = controlled Rev.3, Feb. 2001, page 3 of 23 PF08109B Electrical , , Vapc DCS = controlled PF08109B Characteristic Curves High mode, f = 880 MHz 55 40 20


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2000 - PF08109B

Abstract: circuit on how to make a simple amplifire GSM module operation amplifire circuit applications power amplifire DCS1800 pf08109 327-DB Hitachi DSA00352
Text: PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-821B (Z) 3rd Edition Mar. 2000 Application · Dual band Amplifier for E-GSM (880 to 915 MHz) and , ), and the DCS1800-band (1710 to 1785 MHz). PF08109B Electrical Characteristics for DC (Tc = 25 , , = 0 to 35.5dBm, Vtxlo = 0.1V PF08109B Electrical Characteristics for DCS1800 mode (Tc = 25 , to 32.7dBm 3 PF08109B Package Dimensions Unit: mm 1.8 ± 0.2 8 G 7 5 G G


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PDF PF08109B DCS1800 ADE-208-821B DCS1800 PF08109B circuit on how to make a simple amplifire GSM module operation amplifire circuit applications power amplifire pf08109 327-DB Hitachi DSA00352
PF08109B

Abstract: ic PF08109B PF08109B-TB PMM Bd-5701 pf08109 TCA 345 h9908010n8 samsung Lot Code Identification ASQC-21 ME0104
Text: . /RO, (H fU u ÌUL± 9 CALE REÛO. NTS title PF08109B-TB CAS SDTYP^ D O : CLASS m M , Customer name SAMSUNG ELECTRONICS Co.Ltd Customer type Hitachi type PF08109B-TB Application RF , . PF08109B-TB CAS Hitachi,Ltd. Tokyo Japan Circuite Division 345 f" 2 12345G7B90 , , sixryt»ed,o: class. to WORK 3H: No i ! i i |m he reso. WVN. TITLE PF08109B-TB CAS , . t(tle PF08109B-TB CAS spftype dd; CLASS. Hitachi, Ltd. Tokyo Japan M WORK 98«: m


OCR Scan
PDF H9908010NS 96082TÂ 6596082X220 PF08109B ic PF08109B PF08109B-TB PMM Bd-5701 pf08109 TCA 345 h9908010n8 samsung Lot Code Identification ASQC-21 ME0104
2000 - 74ls111

Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 74ls221 Spice hitachi mosfet audio application note 74LS123 spice 2sk2685 spice spice 74ls00
Text: PF01412A PF0210 PF0414A PF0414B PF0415A PF08103A PF08103B PF08109b Transistors\Power Mos FETs\µ-Fet 2SJ574


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PDF Switchin2SC3512 2SC3513 2SC3793 2SC3867 2SC4126 2SC4196 2SC4197 2SC4260 2SC4261 2SC4262 74ls111 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 74ls221 Spice hitachi mosfet audio application note 74LS123 spice 2sk2685 spice spice 74ls00
2001 - 7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 IC 74LS47 BC245A HA13557 2SK3235
Text: pf01411a pf01411b pf01412a pf04115b pf0414a pf0414b pf0415a pf08103a pf08103b pf08107b pf08107bp pf08109b


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PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 IC 74LS47 BC245A HA13557 2SK3235
2001 - PF08122B

Abstract: PF08109B pf08122 pf08109 LTC4400-2 Li ION spice model charge POWER AMPLIFIER CIRCUIT DIAGRAM 10000 LTC1682 1800mhz rf frequency power amplifier circuit transistor marking code 7E SOT-23
Text: the Hitachi PF08109B , PF08122B, PF08123B, PF08107B and RF Micro Devices RF3108. For slow turn-on RF


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PDF LTC4400-1/LTC4400-2 450kHz 800MHz LTC4400-1) LTC4400-2) LTC3404 LTC3405 250mA LTC4401 PF08122B PF08109B pf08122 pf08109 LTC4400-2 Li ION spice model charge POWER AMPLIFIER CIRCUIT DIAGRAM 10000 LTC1682 1800mhz rf frequency power amplifier circuit transistor marking code 7E SOT-23
2001 - pf08123

Abstract: LT5503
Text: the Hitachi PF08109B , PF08122B, PF08123B, PF08107B and RF Micro Devices RF3108. For slow turn-on RF


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PDF LTC4400-1/LTC4400-2 450kHz 300MHz LTC4400-1) LTC4400-2) LTC5507 100kHz LTC5508 pf08123 LT5503
2001 - PF08109B

Abstract: PF08122B pf08109 33E-12 PF08123B PF08107B LT5503 LTC4400-1 RF POWER amplifier POWER AMPLIFIER CIRCUIT DIAGRAM 10000
Text: PF08109B , PF08122B, PF08123B, PF08107B and RF Micro Devices RF3108. For slow turn-on RF power amplifiers


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PDF LTC4400-1/LTC4400-2 450kHz 300MHz LTC4400-1) LTC4400-2) Shutdown40dB LTC5507 100kHz LTC5508 PF08109B PF08122B pf08109 33E-12 PF08123B PF08107B LT5503 LTC4400-1 RF POWER amplifier POWER AMPLIFIER CIRCUIT DIAGRAM 10000
2001 - vbg marking code SOT23

Abstract: PF08109B CAPACITOR 33PF PF08123B PF08122B PF08107B LTC4400-2 RF3108 LTC4400-1 schottky diode 2GHz to 3GHz
Text: PF08109B , PF08122B, PF08123B, PF08107B and RF Micro Devices RF3108. For slow turn-on RF power amplifiers


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PDF LTC4400-1/LTC4400-2 450kHz 800MHz LTC4400-1) LTC4400-2) LTC5507 100kHz LTC5508 300MHz vbg marking code SOT23 PF08109B CAPACITOR 33PF PF08123B PF08122B PF08107B LTC4400-2 RF3108 LTC4400-1 schottky diode 2GHz to 3GHz
2001 - PF08109B

Abstract: pf08109
Text: RF power amplifiers operating in the 800MHz to 2.7GHz range. Examples include the Hitachi PF08109B


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PDF LTC4400-1/LTC4400-2 450kHz 800MHz LTC4400-1) LTC4400-2) 92cm2 100mA 125mA 300MHz PF08109B pf08109
lm 7803 3V Positive Voltage Regulator

Abstract: ic 4440 40w amplifier 12v mt 1389 de ltsx e3 LM 4440 AUDIO AMPLIFIER CIRCUIT w10 mic package bridge rectifier PF08109B ul 1741 grid te inverter datasheet smd code marking 162 sot23-5 ltqt e3
Text: No file text available


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PDF D-59387 D-73230 1-800-4-LINEAR lm 7803 3V Positive Voltage Regulator ic 4440 40w amplifier 12v mt 1389 de ltsx e3 LM 4440 AUDIO AMPLIFIER CIRCUIT w10 mic package bridge rectifier PF08109B ul 1741 grid te inverter datasheet smd code marking 162 sot23-5 ltqt e3
mosfet 4800

Abstract: schematic diagram inverter 12v to 24v 30a schematic diagram inverter 500w USING MOSFET 4606 MOSFET INVERTER ltsx e3 mosfet driver ic mt 1389 de aot 110 optocoupler 4558 opamp schematic ic 4440 40w amplifier 12v LTPG e3
Text: No file text available


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PDF D-59387 D-73230 1-800-4-LINEAR mosfet 4800 schematic diagram inverter 12v to 24v 30a schematic diagram inverter 500w USING MOSFET 4606 MOSFET INVERTER ltsx e3 mosfet driver ic mt 1389 de aot 110 optocoupler 4558 opamp schematic ic 4440 40w amplifier 12v LTPG e3
SMD LTYN

Abstract: ic 4440 40w amplifier 12v Weston 2281 thermometer ltls e3 LT3060ITS8 Transistor SR 6863 TO-126 LTC3855EUH-1 5Dx diode SMD LTPG e3 LTABA
Text: No file text available


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PDF D-59387 D-73230 1-800-4-LINEAR SMD LTYN ic 4440 40w amplifier 12v Weston 2281 thermometer ltls e3 LT3060ITS8 Transistor SR 6863 TO-126 LTC3855EUH-1 5Dx diode SMD LTPG e3 LTABA
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