The Datasheet Archive

PF08103A datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
PF08103A PF08103A ECAD Model Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone Original PDF
PF08103A PF08103A ECAD Model Renesas Technology MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone Original PDF

PF08103A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - vapc

Abstract: DCS1800 E-GSM900 GSM900 PF08103A Hitachi DSA0023 Hitachi DSA00231
Text: PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE , : VCTL 3: Vdd2 4: Pout GSM 5: Pout DCS 6: Vdd1 7: Vapc 8: Pin G: GND PF08103A Internal , at 3 V VCTL 80 µA Max at 3 V Vapc 3 mA Max at 3 V 2 PF08103A Internal Diagram and , BLO1RN1-A62-001 (MURATA) or equivalent Z1 = Z2 = Z3 = 50 MICRO STRIP LINE 3 PF08103A Absolute , V 4 PF08103A Electrical Characteristics for GSM900 mode (Tc = 25°C) Test conditions unless


Original
PDF PF08103A E-GSM900 DCS1800 ADE-208-685C E-GSM900 DCS1800 vapc GSM900 PF08103A Hitachi DSA0023 Hitachi DSA00231
1998 - blo1rn1-a6

Abstract: ht 1628 vapc BLO1RN1-A62 PF08103A Hitachi DSA00164
Text: PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE , VCTL Vapc PF08103A Band Select and Power Control (H: 2 V Min, L: 0.3 V Max) Operating Mode , VCTL 160 µA Max at 3 V VCTL 80 µA Max at 3 V Vapc 3 mA Max at 3 V 2 PF08103A , E-GSM-band (880-915 MHz), and the DCS-band (1710-1785 MHz). 3 PF08103A Electrical Characteristics , cutoff current Ids 4 PF08103A Electrical Characteristics for GSM900 mode (Tc = 25°C) Test


Original
PDF PF08103A E-GSM900 DCS1800 ADE-208-685B E-GSM900 DCS1800 blo1rn1-a6 ht 1628 vapc BLO1RN1-A62 PF08103A Hitachi DSA00164
1999 - BLO1RN1A

Abstract: BLO1RN1-A62 blo1rn1-a6 gsm power amplifiers 10 w vapc DCS1800 E-GSM900 PF08103A DSA003712 GSM900
Text: PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE , PF08103A Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL , 160 µA Max at 3 V VCTL 80 µA Max at 3 V Vapc 3 mA Max at 3 V 2 PF08103A Internal , BEAD BLO1RN1-A62-001 (MURATA) or equivalent Z1 = Z2 = Z3 = 50 MICRO STRIP LINE 3 PF08103A , 3.0 V 4 PF08103A Electrical Characteristics for GSM900 mode (Tc = 25°C) Test conditions


Original
PDF PF08103A E-GSM900 DCS1800 ADE-208-685B E-GSM900 DCS1800 BLO1RN1A BLO1RN1-A62 blo1rn1-a6 gsm power amplifiers 10 w vapc PF08103A DSA003712 GSM900
2000 - 74ls111

Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 74ls221 Spice hitachi mosfet audio application note 74LS123 spice 2sk2685 spice spice 74ls00
Text: PF01412A PF0210 PF0414A PF0414B PF0415A PF08103A PF08103B PF08109b Transistors\Power Mos FETs\µ-Fet 2SJ574


Original
PDF Switchin2SC3512 2SC3513 2SC3793 2SC3867 2SC4126 2SC4196 2SC4197 2SC4260 2SC4261 2SC4262 74ls111 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 74ls221 Spice hitachi mosfet audio application note 74LS123 spice 2sk2685 spice spice 74ls00
2001 - 7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 IC 74LS47 BC245A HA13557 2SK3235
Text: pf01411a pf01411b pf01412a pf04115b pf0414a pf0414b pf0415a pf08103a pf08103b pf08107b pf08107bp pf08109b


Original
PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 IC 74LS47 BC245A HA13557 2SK3235
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