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Part Manufacturer Description Datasheet Download Buy Part
LTC4085EDE#TRPBF Linear Technology LTC4085 - USB Power Manager with Ideal Diode Controller and Li-Ion Charger; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4085EDE#PBF Linear Technology LTC4085 - USB Power Manager with Ideal Diode Controller and Li-Ion Charger; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4085EDE Linear Technology LTC4085 - USB Power Manager with Ideal Diode Controller and Li-Ion Charger; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4085EDE#TR Linear Technology LTC4085 - USB Power Manager with Ideal Diode Controller and Li-Ion Charger; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LT3681EDE#PBF Linear Technology LT3681 - 36V, 2A, 2.8MHz Step-Down Switching Regulator with Integrated Power Schottky Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LT3681EDE#TRPBF Linear Technology LT3681 - 36V, 2A, 2.8MHz Step-Down Switching Regulator with Integrated Power Schottky Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

PF 513h power diode datasheet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - transistor 2sB633

Abstract: 2sd613 2SB633 513H 2sb633 sanyo
Text: Ordering number: 513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions · High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB EIAJ : SC-46 ( ) : 2SB633 Specifications 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25 , (­)1.5 V V (150) pF 110 pF Any and all SANYO products described or contained


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PDF 2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 transistor 2sB633 2sd613 2SB633 513H 2sb633 sanyo
2001 - 2SB633

Abstract: 513H 2SD613
Text: Ordering number: 513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions · High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB EIAJ : SC-46 ( ) : 2SB633 Specifications 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25 , 320* 15 MHz V V (150) pF 110 pF Any and all SANYO products described or contained


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PDF 2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 2SB633 513H 2SD613
d613

Abstract: D613 voltage 2SD613 2SB633 513H 2sb633 sanyo
Text: Ordering number: EN513H i SA I VO No. 513H 2SB633/2SD613 PNP/NPN Epitaxial Planar Silicon Transistors 85V/6A, AF 25 to 35W Output Applications Features • High breakdown voltage VqeoBSV, high current 6A. • AF25 to 35 W output. ( ): 2SB633 Absolute Maximum Ratings at Ta = 25°C unit . , Vbe Vce = (-)5A,Ic = (-)1A ( -)1.5 V Output Capacitance Cob VCB=(~)10V,f=lMHz (150)110 pF C-B , equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the


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PDF EN513H 2SB633/2SD613 2SB633 40VfIE d613 D613 voltage 2SD613 2SB633 513H 2sb633 sanyo
ir 513h

Abstract: d613 PF 513h EN513H 2SD613 VCE085V 513H 2SB633 D613 voltage ED1000
Text: Ordering number:EN513H I J SA\YO F No. 513H 2SB633/2SD613 PNP/NPN Epitaxial Planar Silicon Transistors 85V/6A, AF 25 to 35W Output Applications Features ■High breakdown voltage VCE085V, high current 6A. • AF25 to 35W output. ( ) : 2SB633 Absolute Maximum Ratings at Ta = 25°C Collector-to-Base Voltage Vqbo Collector-to-Emitter Voltage Vqeo Emitter-to-Base Voltage Vebo Collector Current , « : The 2SB633/2SD613 are classified by 1A hFE as follows. MHz V V pF V V V V l^s l^s Ms 40 C 80


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PDF EN513H 2SB633/2SD613 VCE085V, 2SB633 633/2SD613 5D613 c1707b ir 513h d613 PF 513h EN513H 2SD613 VCE085V 513H D613 voltage ED1000
2007 - Not Available

Abstract: No abstract text available
Text: Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Power Dissipation @ TA=25oC Power Dissipation @ , Preliminary Datasheet 600V N-CHANNEL MOSFET General Description The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. AF01N60C is , 150oC Applications · · · · Switching Mode Power Supply (SMPS) High Voltage Power Supply High Speed Power Switching Inverter TO-92 TO-92 Ammo packing Figure 1. Package Types of AF01N60C Pin


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PDF AF01N60C -55oC 150oC AF01N60C
2000 - Not Available

Abstract: No abstract text available
Text: Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 180 2.4 8.5 4.0 3.13 85 0.68 -55 to +150 300 TJ, TSTG TL - Derate , Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild , avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply , ) Low Crss ( typical 5.5 pF ) Fast switching 100% avalanche tested Improved dv/dt capability D D !


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PDF FQB2N80 FQI2N80 FQB2N80TM O-263
2001 - IR 509H

Abstract: ir 514h mpu 2657 494h ir 243h ir 513h 523H 522H TCM5040T 509H
Text: /4-inch optical format. Use of the CMOS process enables low power-consumption using a single power , . Micro-lens is applicable · Frame frequency: 30 Hz · Power supply voltage: 2.8 V · , Power supply voltage Unit V Recommended Operating Conditions Characteristics Symbol Min , 3.6 Power supply voltage Unit V Input voltage VIN 0~VDVDDIO V Operating , 8 AVDD Analog power supply. VDD = 2.8 V ± 0.2 V 9 DVSS Digital VSS 10


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PDF TCM5040T TCM5040T WQFN32-C-S420-1 IR 509H ir 514h mpu 2657 494h ir 243h ir 513h 523H 522H 509H
2002 - 234h

Abstract: No abstract text available
Text: -inch optical format. Use of the CMOS process enables low power-consumption using a single power supply voltage , Color filter: N/A. Micro-lens is applicable Frame frequency: 30 Hz Power supply voltage: 2.8 V , 2002-01-31 TCM5040T Maximum Ratings (Ta = 25°C) Characteristics Symbol VDVDDIO Power supply voltage , temperature V °C Recommended Operating Conditions Characteristics Symbol VAVDD Power supply voltage , bypass capacitor. Analog VSS TEST terminal 5 Analog power supply. VDD = 2.8 V ± 0.2 V Digital VSS Master


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PDF TCM5040T TCM5040T 698instruments, 234h
2002 - SKB15N60HS

Abstract: No abstract text available
Text: circuits: >1s. 1 Preliminary / Rev 1 Jun-02 Power Semiconductors Preliminary Datasheet SKB15N60HS , / 15 V , R G = 21 2) L = 60 n H, 2) C = 40 pF Energy losses include "tail" and diode reverse , = 40 pF Energy losses include "tail" and diode reverse recovery. T j =1 5 0 ° C V C C = 40 0 V, I C , circuit in Figure E. 4 Preliminary / Rev 1 Jun-02 Power Semiconductors Preliminary Datasheet , Power Semiconductors 6 Preliminary / Rev 1 Jun-02 Preliminary Datasheet SKB15N60HS


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PDF SKB15N60HS O-263AB Q67040-S4543 SKB15N60HS Jun-02
1999 - Not Available

Abstract: No abstract text available
Text: -3P APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply , ) IF IFM PD Pulsed Collector Current Diode Continuous Forward Current @ Tc = 100°C Diode Maximum Forward Current Maximum Power Dissipation @Tc = 25°C Maximum Power Dissipation @Tc = 100°C Tj Tstg TL , 7 8 14 7.5 250 100 2.6 80 220 0.3 37 11 12 - V uA nA V V pF pF pF nS nS nS nS mJ mJ mJ nC nC , ELECTRICAL CHARACTERISTICS ( DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol VFM N-CHANNEL IGBT


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PDF SGH13N60UFD SGH13N60UFDTU SGH13N60UFD
2000 - Not Available

Abstract: No abstract text available
Text: Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power , Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild , ) Low Crss ( typical 6.5 pF ) Fast switching 100% avalanche tested Improved dv/dt capability D S ! , MHz -190 40 6.5 250 55 8.5 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd , (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum


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PDF FQB2P25 FQI2P25 -250V, FQI2P25TU O-262
2000 - FQB12P20TM

Abstract: No abstract text available
Text: Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 810 -11.5 12 -5.5 3.13 120 0.96 -55 to +150 300 TJ, TSTG TL - , Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild , nC) Low Crss ( typical 30 pF ) Fast switching 100% avalanche tested Improved dv/dt capability D , = 0 V, f = 1.0 MHz -920 190 30 1200 250 40 pF pF pF Switching Characteristics td(on) tr td(off


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PDF FQB12P20 FQI12P20 -200V, FQB12P20TM O-263
2002 - MOSFET and parallel Schottky diode

Abstract: FDS6644 FDS7764S
Text: designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7764S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology , Schottky body diode · Low gate charge (25 nC typical) · High performance trench technology for extremely low RDS(ON) and fast switching Applications · DC/DC converter · Motor drives · High power and


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PDF FDS7764S FDS7764S MOSFET and parallel Schottky diode FDS6644
2002 - Not Available

Abstract: No abstract text available
Text: circuit in Figure E. Power Semiconductors 3 Preliminary / Rev 1 Jun-02 Preliminary Datasheet , n H, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. - 8 max , , R G = 5 0 1) L = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode reverse , Preliminary Datasheet SKB06N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff , VCE 600V, Tj 150°C Diode forward current IF TC = 25°C 12 TC = 100°C 6 Diode


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PDF SKB06N60HS O-263AB Q67040-S4544 Jun-02
2001 - ir 514h

Abstract: PF 513h power diode datasheet TCM5033T ir 499h ir 507h TCM5033T equivalent ir 243h 509h fujinon 517H
Text: power supply voltage. The device also provides excellent color reproduction due to the use of a primary , filter, Bayer arrangement (G checked, R/B line in sequence) · Frame frequency: 30 Hz · Power , Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power supply voltage VDD -0.5 , Power supply voltage Unit V Input voltage VIN 0~VDVDDIO V Operating temperature , Digital I/O power supply 8 DATA0 I/O AD output (LSB) 9 DATA1 I/O AD output 10


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PDF TCM5033T TCM5033T WQFN32-C-S420-1 ir 514h PF 513h power diode datasheet ir 499h ir 507h TCM5033T equivalent ir 243h 509h fujinon 517H
2005 - FDS6688

Abstract: FDS6688S FDS6689S schottky diode 60V 80A
Text: designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6688S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology , SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching Applications · D D High power and current handling capability · · Synchronous


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PDF FDS6689S FDS6689S FDS6688S FDS6688 schottky diode 60V 80A
2001 - Not Available

Abstract: No abstract text available
Text: MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6644S includes an integrated Schottky diode using Fairchild’s , and high reverse voltage. This will increase the power in the device. Figure 14. SyncFET diode , Schottky diode . • 28 A, 30 V. RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V â


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PDF FDP6644S/FDB6644S FDP6644S FDP6644S/FDB6644S FDP6644/FDB6644
2013 - Not Available

Abstract: No abstract text available
Text: International Rectifier Submit Datasheet Feedback October 23, 2013 IRAM630-1562F TJ (IGBT & Diode & IC , IRAM630-1562F Intelligent Power Module for Energy Efficient Compressor Applications 15A , -1562F is a 15A, 600V PFC+Inverter Intelligent Power Module (IPM) with Open Emitter pins specifically , . Features  Integrated boost PFC power stage and gate driver  Integrated gate drivers and bootstrap , Schmitt-triggered input logic  Cross-conduction prevention logic  Motor Power range up to 2kW / 85~253 Vac


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PDF IRAM630-1562F IRAM630-1562F AN-1049
2012 - Not Available

Abstract: No abstract text available
Text: efficiency ● neutral point clamped inverter ● reactive power and LVRT capability ● SiC buck diode â , =100° C 66 A Power dissipation per Diode Ptot Tj=Tjmax Th=80° C Tc=80° C 44 66 , Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot , Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot , 10-FZ06NRA069FP02-P967F68 10-PZ06NRA069FP02-P967F68Y target datasheet flowNPC 0 600V/60A &


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PDF 10-FZ06NRA069FP02-P967F68 10-PZ06NRA069FP02-P967F68Y 00V/60A
2002 - FDS6676S

Abstract: FDS6676
Text: designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. · 14.5 A, 30 V. · Includes SyncFET Schottky body diode · Low gate charge (43nC , High power and current handling capability Applications · DC/DC converter RDS(ON) typ 5.25 m @


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PDF FDS6676S FDS6676S FDS6676
2001 - B667

Abstract: MOSFET and parallel Schottky diode FDP 38 FDB6676S FDP6676 FDP6676S
Text: MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP/B6676S includes an integrated Schottky diode using Fairchild , rectifier is indistinguishable from the performance of the FDP/B6676 in parallel with a Schottky diode , Schottky body diode · Low gate charge (40nC typical) · High performance trench technology for extremely


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PDF FDP6676S FDB6676S FDP/B6676S FDP/B6676S FDP/B6676 B667 MOSFET and parallel Schottky diode FDP 38 FDB6676S FDP6676
2000 - Not Available

Abstract: No abstract text available
Text: is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680S includes an integrated Schottky diode using Fairchild’s monolithic , indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode . • 11.5 A, 30 V. • Includes SyncFET Schottky body diode • Low gate charge (17nC typical) • High


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PDF FDS6680S FDS6680S FDS6680
2002 - FDB6644S

Abstract: FDP6644 FDP6644S MOSFET and parallel Schottky diode
Text: MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6644S includes an integrated Schottky diode using Fairchild's monolithic , high reverse voltage. This will increase the power in the device. Figure 14. SyncFET diode reverse , diode . · 28 A, 30 V. RDS(ON) = 10 m @ VGS = 10 V RDS(ON) = 12 m @ VGS = 4.5 V · Includes


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PDF FDP6644S/FDB6644S FDP6644S FDP6644S/FDB6644S FDP6644/FDB6644 FDB6644S FDP6644 MOSFET and parallel Schottky diode
2001 - fdb fairchild

Abstract: FDP6670S FDB6670S
Text: MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky diode using Fairchild's monolithic , diode . · 31 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V RDS(ON) = 12.5 m @ VGS = 4.5 V · Includes SyncFET Schottky body diode · Low gate charge (23nC typical) · High performance trench technology for


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PDF FDP6670S/FDB6670S FDP6670S FDP6670S/FDB6670S FDP6670A/FDB6670A fdb fairchild FDB6670S
1999 - Not Available

Abstract: No abstract text available
Text: * Power Supply C G E ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC Characteristics , ICM (1) IF IFM PD Pulsed Collector Current Diode Continuous Forward Current @ Tc = 100°C Diode Maximum Forward Current Maximum Power Dissipation @Tc = 25°C Maximum Power Dissipation @Tc = 100°C Tj , 184 24 54 95 100 0.12 0.19 0.8 344 76 86 7.5 250 100 517 116 130 V uA nA V V pF pF pF ns ns ns , CHARACTERISTICS ( DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol VFM CO-PAK IGBT Characteristics


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PDF SGL160N60UFD O-264
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