PDTC123JE |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm |
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PDTC123JE |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC123JE |
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm |
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Original |
PDF
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PDTC123JE,115 |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm - Complement: PDTA123JE ; hFE max:>100 ; hFE min: 100 ; IO max: 100 mA; Input resistor: 2.2 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 21 ; VCEO max: 50 V; Package: SOT416 (SC-75); Container: Tape reel smd |
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PDTC123JE,115 |
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NXP Semiconductors
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PDTC123 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, EMT3, SMD, SC-75, SMPAK-3, BIP General Purpose Small Signal |
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PDTC123JE,145 |
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NXP Semiconductors
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PDTC123JE - PDTC123JE - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm |
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PDTC123JEF |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC123JEF |
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 2.2 kohm, R2 = 47 kohm |
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PDTC123JET4 |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC123JET/R |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm - Complement: PDTA123JE ; hFE max:>100 ; hFE min: 100 ; IO max: 100 mA; Input resistor: 2.2 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 21 ; VCEO max: 50 V |
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Original |
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