PBSS4350X |
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Philips Semiconductors
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SMD, High Current Amp., 50V 3A 0.55W, Silicon NPN Transistor |
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PBSS4350X |
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Philips Semiconductors
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50 V, 3 A NPN Low Vcesat (BISS) Transistor |
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PBSS4350X,115 |
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NXP Semiconductors
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50 V, 3 A NPN low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; IC max: 3000 mA; Polarity: NPN ; VCEsat at Ic=1 A, Ib=50 mA: 170 mV; VCEsat at Ic=2 A, Ib=200 mA: 290 mV; VCEsat at Ic=500 mA, Ib=50 mA: <90 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
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PBSS4350X,120 |
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NXP Semiconductors
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PBSS4350X - 50 V, 3 A NPN low VCEsat (BISS) transistor, SOT89 Package, Standard Marking, Reel Pack, 7 |
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PDF
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PBSS4350X,135 |
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NXP Semiconductors
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50 V, 3 A NPN low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; IC max: 3000 mA; Polarity: NPN ; VCEsat at Ic=1 A, Ib=50 mA: 170 mV; VCEsat at Ic=2 A, Ib=200 mA: 290 mV; VCEsat at Ic=500 mA, Ib=50 mA: <90 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd |
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Original |
PDF
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PBSS4350X,146 |
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NXP Semiconductors
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50 V, 3 A NPN low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; IC max: 3000 mA; Polarity: NPN ; VCEsat at Ic=1 A, Ib=50 mA: 170 mV; VCEsat at Ic=2 A, Ib=200 mA: 290 mV; VCEsat at Ic=500 mA, Ib=50 mA: <90 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK) |
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Original |
PDF
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PBSS4350X,147 |
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NXP Semiconductors
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50 V, 3 A NPN low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; IC max: 3000 mA; Polarity: NPN ; VCEsat at Ic=1 A, Ib=50 mA: 170 mV; VCEsat at Ic=2 A, Ib=200 mA: 290 mV; VCEsat at Ic=500 mA, Ib=50 mA: <90 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK) |
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PBSS4350XT/R |
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NXP Semiconductors
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50 V, 3 A NPN low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; IC max: 3000 mA; Polarity: NPN ; VCEsat at Ic=1 A, Ib=50 mA: 170 mV; VCEsat at Ic=2 A, Ib=200 mA: 290 mV; VCEsat at Ic=500 mA, Ib=50 mA: <90 mV; VCEO max: 50 V |
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Original |
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