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PA2610

Abstract: No abstract text available
Text: MOS MOS Field Effect Transistor µ PA2610 P MOS FET µ PA2610 P MOS FET 1.8 V RDS(on)1 = 69 m MAX.VGS = -4.5 V, ID = -2.5 A RDS(on)2 = 88 m MAX.VGS = -2.5 V, ID = -2.5 A RDS(on)3 = 142 m MAX.VGS = -1.8 V, ID = -1.5 A µ PA2610T1C 8LD3x2MLPM Axxxxxx 3 TA = 25°C - VDSS VGS = 0 V -20.0 V - VGSS VDS = 0 V m8.0 V ID(DC) m5.0 A ID(pulse) PW10 µs, m20.0 A PT1 0.2 W PT2


Original
PDF PA2610 PA2610T1C G16836JJ1V0DS00 G16836JJ1V0DS M8E02 PA2610
Not Available

Abstract: No abstract text available
Text: RDS(on)3 = 142 m MAX.VGS = -1.8 V, ID = -1.5 A µ PA2610T1C 8LD3x2MLPM Axxxxxx 3


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PDF PA2610 PA2610T1C G16836JJ1V0DS M8E02
2004 - code marking NEC

Abstract: date code marking NEC g1683
Text: MAX. (VGS = -1.8 V, ID = -1.5 A) ORDERING INFORMATION PART NUMBER PACKAGE µ PA2610T1C


Original
PDF PA2610 PA2610, PA2610T1C code marking NEC date code marking NEC g1683
2004 - Not Available

Abstract: No abstract text available
Text: ˆ’1.8 V, ID = −1.5 A) ORDERING INFORMATION PART NUMBER PACKAGE µ PA2610T1C 8LD3x2MLPM


Original
PDF
2004 - renesas traceability

Abstract: No abstract text available
Text: MAX. (VGS = -1.8 V, ID = -1.5 A) ORDERING INFORMATION PART NUMBER PACKAGE µ PA2610T1C


Original
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