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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
ADS1000A1IDBVR ADS1000A1IDBVR ECAD Model Texas Instruments 12-Bit, 128SPS, 1-Ch Delta-Sigma ADC w/ PGA, Oscillator & I2C 6-SOT-23 -40 to 125
SN74AS1000ANSR SN74AS1000ANSR ECAD Model Texas Instruments Quadruple 2-Input Positive-NAND Buffers/Drivers 14-SO 0 to 70
ADS1000A1IDBVTG4 ADS1000A1IDBVTG4 ECAD Model Texas Instruments 12-Bit, 128SPS, 1-Ch Delta-Sigma ADC w/ PGA, Oscillator & I2C 6-SOT-23 -40 to 125
SNJ54AS1000AJ SNJ54AS1000AJ ECAD Model Texas Instruments Quadruple 2-Input Positive-NAND Buffers/Drivers 14-CDIP -55 to 125
SN74AS1000ADG4 SN74AS1000ADG4 ECAD Model Texas Instruments Quadruple 2-Input Positive-NAND Buffers/Drivers 14-SOIC 0 to 70
SNJ54AS1000AW SNJ54AS1000AW ECAD Model Texas Instruments Quadruple 2-Input Positive-NAND Buffers/Drivers 14-CFP -55 to 125

P51-1000-A-B-D-4.5OVP-000-000 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
P51-1000-A-B-D-4.5OVP-000-000 P51-1000-A-B-D-4.5OVP-000-000 ECAD Model SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 1000PSI 1/8-27NPT .5-4.5V Original PDF

P51-1000-A-B-D-4.5OVP-000-000 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: Typical Reverse Current Vs. Reverse Voltage ( Per Leg ) 1000 Tj = 125°C Junction Capacitance - C , = 160V 40 TJ = 125°C TJ = 25°C 20 1 100 1000 100 dif / dt - ( A / µs ) 1000 dif / dt - ( A / µs ) Fig. 5 - Typical Reverse Recovery Vs. dif/dt (Per Leg) Fig. 6 - , / dt - ( A / µs ) IF = 50A IF = 25A IF = 50A 10000 Qrr - ( nC ) 1000 100 VR = 160V IF = 100A 1000 VR = 160V TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 10 100 100


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PDF 94238B HFB50HC20C
2006 - HFB50HC20C

Abstract: IRFP250
Text: Current Vs. Reverse Voltage ( Per Leg ) 1000 Tj = 125°C Junction Capacitance - C T (pF , °C TJ = 25°C 20 1 100 1000 100 dif / dt - ( A / µs ) 1000 dif / dt - ( A / µs , 25A IF = 50A 10000 Qrr - ( nC ) 1000 100 VR = 160V IF = 100A 1000 VR = 160V TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 10 100 100 1000 dif / dt - ( A / µs ) Fig. 7 - Typical Stored Charge Vs. dif/dt (Per Leg) 4 100 1000 dif / dt - ( A / µs


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PDF 94238B HFB50HC20C HFB50HC20C IRFP250
2006 - HFB16HY20CC

Abstract: IRFP250
Text: Fig. 2 - Typical Reverse Current Vs. Reverse Voltage ( Per Leg ) 1000 Tj = 125°C Junction , VR = 160V TJ = 125°C TJ = 25°C 30 20 1 100 1000 100 1000 dif / dt - ( A / µs , Recovery Current Vs. dif/dt ( Per Leg ) 10000 1000 IF = 32A IF = 16A IF = 8.0A IF = 16A di ( rec )M / dt - ( A / µs ) Qrr - ( nC ) IF = 8.0A 100 VR = 160V IF = 32A 1000 VR = 160V TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 100 10 100 1000 dif / dt - ( A


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PDF 94223B HFB16HY20CC HFB16HY20CC IRFP250
Not Available

Abstract: No abstract text available
Text: - Typical Reverse Current Vs. Reverse Voltage ( Per Leg ) 1000 Tj = 125°C Junction , = 32A IF = 8.0A 10 40 VR = 160V TJ = 125°C TJ = 25°C 30 20 1 100 1000 100 1000 dif / dt - ( A / µs ) dif / dt - ( A / µs ) Fig. 5 - Typical Reverse Recovery Vs. dif/dt,( Per Leg ) Fig. 6 -Typical Recovery Current Vs. dif/dt ( Per Leg ) 10000 1000 , 8.0A 100 VR = 160V IF = 32A 1000 VR = 160V TJ = 125°C TJ = 25°C TJ = 125°C TJ =


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PDF 94223B HFB16HY20CC
Not Available

Abstract: No abstract text available
Text: 84104100 Lid ABD 1000 84101000 Lid ABA 800-1000 1) DI 1000 -RFI DI 1000-5002 DI 1000-3000 , for 9 V block. Black powdercoat. • ABD 1000 /84101000 End lid. Black powdercoat. • ABA 800-1000 , VDE 0470 IP40, when using parallel adapters (AB-AP) with 600, 800 and 1000 extrusions. Note , 84137000 84687000 Length Width Height (Inches/mm) (Inches/mm) (Inches/mm) 39.37/ 1000 39.37/ 1000 39.37/ 1000 39.37/ 1000 39.37/ 1000 39.37/ 1000 39.37/ 1000 39.37/ 1000 39.37/ 1000 39.37/ 1000


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PDF AdapterS/84162000 with1600 HS/84200000 AB-WL/84005000 AB-WL1/84006001 AB-WL2/84007000
2006 - JANSR2N7483T3

Abstract: IRHF58034CM IRHY53034CM IRHY54034CM IRHY57034CM
Text: For footnotes refer to the last page www.irf.com 3 IRHY57034CM, JANSR2N7483T3 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 VGS 15V 12V 10V , , Drain-to-Source Current (A) 1000 TJ = 25 ° C 100 TJ = 150 ° C 10 V DS =15 25V 20µs PULSE WIDTH , ) IRHY57034CM, JANSR2N7483T3 1500 Ciss 1000 Coss 500 ID = 18A 22A VDS = 48V VDS = 30V VDS = , . Drain-to-Source Voltage 1000 100 TJ = 150 ° C ID, Drain-to-Source Current (A) ISD , Reverse Drain


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PDF 93825D IRHY57034CM JANSR2N7483T3 O-257AA) MIL-PRF-19500/702 IRHY57034CM IRHY53034CM JANSF2N7483T3 IRHY54034CM JANSR2N7483T3 IRHF58034CM
Not Available

Abstract: No abstract text available
Text: , Capacitance (pF) 2000 IRHY7230CM, JANSR2N7381 1500 Ciss 1000 Coss 500 Crss ID = 9.4A , 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 ID , Drain Current (A) -ISD , 25 ° C TJ = 150 ° C Single Pulse 0.1 2.2 1 10 100 1000 VDS , Drain-to-Source , " Ãb$d 6 %% Ãb#!d #!Ãb# d ÃÃÃÃÃÃÃ"' Ãb $d "YÑ ÃÃÃÃÃÃÃ"$%Ãb #d %'( Ãb%%$d %"( Ãb%#$d "%" Ãb$"&d ""( Ãb$!&d ! $' Ãb!d #'"Ãb (d 


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PDF PD-91273E IRHY7230CM JANSR2N7381 MIL-PRF-19500/614 O-257AA) IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM 1000K
2006 - IRF N-Channel Power MOSFETs

Abstract: IRHY3230CM IRHY4230CM IRHY7230CM IRHY8230CM JANSR2N7381
Text: , Gate-to-Source Voltage (V) C, Capacitance (pF) 2000 IRHY7230CM, JANSR2N7381 1500 Ciss 1000 , Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 , www.irf.com 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 0.1 2.2 1 10 100 1000 VDS , , condition A. Case Outline and Dimensions - TO-257AA " Ãb$d 6 %% Ãb#!d #!Ãb# d ÃÃÃÃÃÃÃ"' Ãb $d "YÃ ÃÃÃÃÃÃÃ"$%Ãb #d %'( Ãb%%$d %"( Ãb%#$d "%" Ãb$"&d ""( Ãb$!&d ! $' Ãb!d #'"Ãb (d (! Ãb#"d


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PDF PD-91273E IRHY7230CM JANSR2N7381 MIL-PRF-19500/614 O-257AA) IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM 1000K IRF N-Channel Power MOSFETs JANSR2N7381
2006 - Not Available

Abstract: No abstract text available
Text: . Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 ID , Source-Drain Diode Forward Voltage www.irf.com 1.2 1 10 100 1000 VDS , Drain-toSource , -750, method 1019, condition A. Case Outline and Dimensions — Low-Ohmic TO-257AA  " Ãb$d 6 %% Ãb#!d #!Ãb# d ÃÃÃÃÃÃÃ"' Ãb $d "YÑ ÃÃÃÃÃÃÃ"$%Ãb #d %'( Ãb%%$d %"( Ãb%#$d "%" Ãb$"&d ""( Ãb$!&d ! $' Ãb!d #'"Ãb (d  # Ãb#$d '


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PDF PD-96925A O-257AA) IRHYS67230CM IRHYS67230CM IRHYS63230CM O-257AA 90MeV/
2006 - JANSR2N7380

Abstract: Accelerometers datasheet 8303a IRHY7130CM IRHY3130CM IRHY4130CM IRHY8130CM
Text: (pF) 1500 Ciss 1000 500 Coss ID = 14 A VDS = 80V VDS = 50V VDS = 20V 16 12 , . Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 °C 10 I D , 10 1ms TC = 25 °C TJ = 150 °C Single Pulse 1 2.5 1 10ms 10 100 1000 VDS , , condition A. Case Outline and Dimensions - TO-257AA " Ãb$d 6 %% Ãb#!d #!Ãb# d ÃÃÃÃÃÃÃ"' Ãb $d "YÃ ÃÃÃÃÃÃÃ"$%Ãb #d %'( Ãb%%$d %"( Ãb%#$d "%" Ãb$"&d ""( Ãb$!&d ! $' Ãb!d #'"Ãb (d (! Ãb#"d


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PDF 91274E IRHY7130CM JANSR2N7380 MIL-PRF-19500/614 O-257AA) IRHY7130CM IRHY3130CM IRHY4130CM IRHY8130CM 1000K JANSR2N7380 Accelerometers datasheet 8303a
Not Available

Abstract: No abstract text available
Text: , Capacitance (pF) 1500 Ciss 1000 500 Coss ID = 14 A VDS = 80V VDS = 50V VDS = 20V 16 , Capacitance Vs. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = , 1 10ms 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating , -750, method 1019, condition A. Case Outline and Dimensions — TO-257AA  " Ãb$d 6 %% Ãb#!d #!Ãb# d ÃÃÃÃÃÃÃ"' Ãb $d "YÑ ÃÃÃÃÃÃÃ"$%Ãb #d %'( Ãb%%$d %"( Ãb%#$d


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PDF 91274E IRHY7130CM JANSR2N7380 MIL-PRF-19500/614 O-257AA) IRHY7130CM IRHY3130CM IRHY4130CM IRHY8130CM 1000K
2006 - 5V GATE TO SOURCE VOLTAGE MOSFET

Abstract: Marking G2 MARKING S1 IRF6156 g2 marking DIODE marking 23ab
Text: 1 20µs PULSE WIDTH Tj = 150°C 0.1 0.01 0.1 1 10 100 0.1 1000 1 10 100 1000 VSS, Source-to-Source Voltage (V) VSS, Source-to-Source Voltage (V) Fig 2 , 1.0V G2 T J = 150°C + Q1 - 10.00 VSS G1 S1 VSS = 15V 20µs PULSE WIDTH 1.00 , Characteristics. www.irf.com Fig 4. Output and Transfer Test Circuit. 3 1200 1000 800 600 , , Gate Current ( mA) 8 7 6 5 4 3 1000 T J = 150°C 100 10 1 2 0.01 0 0 5


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PDF 94592B IRF6156 5V GATE TO SOURCE VOLTAGE MOSFET Marking G2 MARKING S1 IRF6156 g2 marking DIODE marking 23ab
2006 - JANSR2N7484T3

Abstract: diode.18 IRHY53130CM IRHY54130CM IRHY57130CM JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3
Text: Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 ID, Drain-to-Source , 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 , . Case Outline and Dimensions - TO-257AA " Ãb$d 6 %% Ãb#!d #!Ãb# d ÃÃÃÃÃÃÃ"' Ãb $d "YÃ ÃÃÃÃÃÃÃ"$%Ãb #d %'( Ãb%%$d %"( Ãb%#$d "%" Ãb$"&d ""( Ãb$!&d ! $' Ãb!d #'"Ãb (d (! Ãb#"d #!Ãb# d # Ãb#$d '( Ãb"$d 7 " & Ãb!'d H6Y 8 $'' Ãb%!$d !& Ãb$d !$#Ãb d !Y ÃÃÃÃÃÃÃÃÃÃÃÃ''Ãb"$d


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PDF 93826D IRHY57130CM JANSR2N7484T3 O-257AA) MIL-PRF-19500/702 IRHY53130CM IRHY54130CM JANSF2N7484T3 JANSR2N7484T3 diode.18 IRHY53130CM IRHY54130CM IRHY57130CM JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3
2012 - pam09sd2305hp

Abstract: No abstract text available
Text: Description The PAM09SD2305HP is a single line, 1000 Watt transient voltage suppression device designed for , /50ns • Compatible with IEC 61000-4-5 (Surge): 45A, 8/20µs • 1000 Watts Peak Pulse Power per , °C Unless Otherwise Specified PARAMETER SYMBOL VALUE UNITS PPP 1000 Watts TA -55 to , ProTek’Tion™ SPICE MODEL figure 1 spice model for ABD ABD ABD Lg 0.55nH Lg 0.5nH UNIDIRECTIONAL BIDIRECTIONAL ABD - Avalanche Breakdown Diode (TVS) Lg - Lead Inductance table 1 - spice


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PDF PAM09SD2305HP PAM09SD2305HP OD-323 PAM09SD2305HP,
2001 - 1150is

Abstract: No abstract text available
Text: Speed V2D Protection 600 Watts Peak Pulse Power Dissipation per Line (10/ 1000 µs) 3,600 Watts Peak Pulse Power Dissipation per Line (8/20 µs) High Surge Capability: 80A (10/ 1000 µs) Bidirectional Configuration , TEMPERATURE REPETITION RATE (DUTY CYCLE) TCLAMPING (0 VOLTS TO V(BR) MIN.) 600 Watts, 10/ 1000 µs Waveshape , Value IPP 60 600W, 10/ 1000 µs Waveshape 1 Half Value IPP/ 2 = td 40 20 e-t .1 0.1 0 1 10 , Power 10/ 1000 µs 60 8 40 4 20 Average Power 0 0 10 20 30 IPP - Peak Pulse Current -


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PDF SMLC12C-2 RS-422, RS-423 RS-485 EN61000-4) SO-16 Protec25 1150is
2014 - Not Available

Abstract: No abstract text available
Text: ABD (Avalanche Breakdown Diode) RSSA SURGE PROTECTIVE DEVICES Nominal Breakdown Voltage , PROTECTIVE DEVICES 5 1000 2000 3000 5000 U U U B B B 5000W Dimensions D±0.4 W±0.4 ) D 2.8 1000 1500 2000 3000 5000 d±0.05 W 5.0 5.3 8.5 d 0.6 1.0 8.6 12.3 1.2 Electrical Specifications 1000 Series VBR VWM IT 1007 1012 1016 1018 1050  , 50.5 73.0 88.0 114 142 222 20 SURGE PROTECTIVE DEVICES RSSA ABD (Avalanche Breakdown


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PDF
2006 - IRHF58Z30CM

Abstract: IRHY53Z30CM IRHY54Z30CM IRHY57Z30CM JANSR2N7482T3
Text: Capacitance Vs. Drain-to-Source Voltage 100 1000 ID, Drain-to-Source Current (A) ISD , Reverse , , condition A. Case Outline and Dimensions - TO-257AA " Ãb$d 6 %% Ãb#!d #!Ãb# d ÃÃÃÃÃÃÃ"' Ãb $d "YÃ ÃÃÃÃÃÃÃ"$%Ãb #d %'( Ãb%%$d %"( Ãb%#$d "%" Ãb$"&d ""( Ãb$!&d ! $' Ãb!d #'"Ãb (d (! Ãb#"d #!Ãb# d # Ãb#$d '( Ãb"$d 7 " & Ãb!'d H6Y 8 $'' Ãb%!$d !& Ãb$d !$#Ãb d !Y


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PDF PD-93824E IRHY57Z30CM JANSR2N7482T3 O-257AA) MIL-PRF-19500/702 IRHY57Z30CM IRHY53Z30CM JANSF2N7482T3 IRHY54Z30CM IRHF58Z30CM JANSR2N7482T3
Not Available

Abstract: No abstract text available
Text: Capacitance Vs. Drain-to-Source Voltage 100 1000 ID, Drain-to-Source Current (A) ISD , Reverse , — TO-257AA  " Ãb$d 6 %% Ãb#!d #!Ãb# d ÃÃÃÃÃÃÃ"' Ãb $d "YÑ ÃÃÃÃÃÃÃ"$%Ãb #d %'( Ãb%%$d %"( Ãb%#$d "%" Ãb$"&d ""( Ãb$!&d ! $' Ãb!d #'"Ãb (d (! Ãb#"d #!Ãb# d  # Ãb#$d '( Ãb"$d 7 " & Ãb!'d H6Y 8 $'' Ãb%!$d !& Ãb$d !$#Ãb d !Y ÃÃÃÃÃÃÃÃÃÃÃÃ''Ãb"$d "YÑ


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PDF PD-93824E IRHY57Z30CM JANSR2N7482T3 O-257AA) MIL-PRF-19500/702 IRHY57Z30CM IRHY53Z30CM JANSF2N7482T3 IRHY54Z30CM
2012 - Not Available

Abstract: No abstract text available
Text: The PAM09SD2305HP is a single line, 1000 Watt transient voltage suppression device designed for use in , with IEC 61000-4-5 (Surge): 45A, 8/20µs · 1000 Watts Peak Pulse Power per Line (tp = 8/20µs) · , 1 Operating Temperature Storage Temperature SYMBOL PPP TA TSTG VALUE 1000 -55 to 150 -55 to , SPICE MODEL figure 1 spice model for ABD ABD ABD Lg 0.55nH Lg 0.5nH UNIDIRECTIONAL ABD - Avalanche , Cjo IS Vj M N RS TT EG unit V µA pF A V Ohms s eV abd (tvs) 6.0 1 880 1E-11 0.6 0.33 1 0.09


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PDF PAM09SD2305HP PAM09SD2305HP OD-323 PAM09SD2305HP,
2012 - Not Available

Abstract: No abstract text available
Text: The PAM09SD2305HP is a single line, 1000 Watt transient voltage suppression device designed for use in , ): 45A, 8/20µs · 1000 Watts Peak Pulse Power per Line (tp = 8/20µs) · Replacement for MLV (0805) · , Temperature Storage Temperature SYMBOL PPP TA TSTG VALUE 1000 -55 to 150 -55 to 150 UNITS Watts °C , model for ABD ABD ABD Lg 0.55nH Lg 0.5nH UNIDIRECTIONAL ABD - Avalanche Breakdown Diode (TVS) Lg - , EG unit V µA pF A V Ohms s eV abd (tvs) 6.0 1 880 1E-11 0.6 0.33 1 0.09 1E-8 1.11 05353


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PDF PAM09SD2305HP PAM09SD2305HP OD-323 PAM09SD2305HP,
2006 - IRF6100

Abstract: 4.5v to 100v input regulator
Text: . Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 -ID , Drain , , Temperature ( °C ) Fig 15. Threshold Voltage Vs. Temperature 0.001 0.010 0.100 1.000 10.000 , Ãb#d 8 !Y 7 !$$Ãb d !$Ãb' d $!# b%d 6 8 # #Y Ãb#d 8 !Y " # b %d , " à "Å 9hv 7hyyÃ! Bhr 7hyyÃ# ($(ÈÃT ÃÃ"'ÈÃ6t ÃÃ&ÈÃ8 &'!Ãb" d &!! Ãb!'d ! Ãb'd 8 ' Ãb"!d Tpr 7hyyà G@69AS@@ÃTPG9@S 76GGÃ8PHQPTDUDPI $"&Ãb! d $&Ãb (d ' Ãb"!d ' 76GGÃÃ


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PDF 93930F IRF6100 OT-23 GP86UDPI IRF6100 4.5v to 100v input regulator
2009 - transient suppressor spice model

Abstract: No abstract text available
Text: Description The PSDxxHP series are single line, 1000 Watt transient voltage suppression devices designed for , (EFT): 40A - 5/50ns · Compatible with IEC 61000-4-5 (Surge): 45A, 8/20µs · 1000 Watts Peak Pulse Power , 1 Operating Temperature Storage Temperature SYMBOL PPP TA TSTG VALUE 1000 -55 to 150 -55 to , Name Means ProTek'TionTM PSD05HP - PSD12HP SPICE MODEL figure 1 spice model for ABD ABD ABD Lg 0.55nH Lg 0.5nH UNIDIRECTIONAL ABD - Avalanche Breakdown Diode (TVS) Lg - Lead Inductance


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PDF PSD05HP PSD12HP OD-323 transient suppressor spice model
2009 - psd05hp

Abstract: PSDxxHP Series
Text: DESCRIPTION The PSDxxHP series are single line, 1000 Watt transient voltage suppression devices designed for , • 1000 Watts Peak Pulse Power per Line (tp = 8/20µs) • Replacement for MLV (0805) â , RATINGS @ 25°C Unless Otherwise Specified PARAMETER SYMBOL VALUE UNITS PPP 1000 Watts , FOR ABD ABD ABD Lg 0.55nH Lg 0.5nH UNIDIRECTIONAL BIDIRECTIONAL ABD - Avalanche Breakdown Diode (TVS) Lg - Lead Inductance TABLE 1 - SPICE PARAMETERS PARAMETER UNIT ABD (TVS


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PDF PSD05HP PSD12HP OD-323 PSDxxHP Series
2000 - smp6lc

Abstract: SMP6LCxx-2P Series marking code diode R12
Text: duration by voltage 1000 100 IPP - Amps 5V 6.5V 12V 15V 24V 10 1 10 100 td - Pulse Duration - µs 1000 05088.R12 11/12 Page 2 www.protekdevices.com 05088 Only One Name , /O ABD LCRD LCRD Lg 0.8nH ABD ABD - Avalanche Breakdown Diode (TVS) LCRD: Low Capacitance , unit V µA pF A V Ohms s eV abd (tvs) See Table 2 1 See Table 2 See Table 2 0.6 0.33 1 See Table 2 , .5-2P SMP6LC12-2P table 2 - abd specific spice parameters i s (amps) bv(volts) cjo(pF) 6.0 7.2 13.3 3000 2600


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PDF SMP6LC05-2P SMP6LC24-2P SO-16 5/50ns smp6lc SMP6LCxx-2P Series marking code diode R12
2006 - mosfet p channel irf

Abstract: 4.5v to 100v input regulator
Text: 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 -ID , Drain Current (A) I , . Threshold Voltage Vs. Temperature 0.001 0.010 0.100 1.000 10.000 Pulsewidth (sec) Fig , !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td Ãb#d 8 !Y 7 !$$Ãb d !$Ãb' d $!# b%d 6 8 # #Y Ãb#d 8 " !Y # b %d 76GGÃ6TTDBIH@IUT $!# b%d Ã2ÃTPVS8 , # ($(ÈÃT ÃÃ"'ÈÃ6t ÃÃ&ÈÃ8 &'!Ãb" d &!! Ãb!'d ! Ãb'd 8 ' Ãb"!d Tpr 7hyyà G


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PDF 96012B IRF6100PbF OT-23 GP86UDPI mosfet p channel irf 4.5v to 100v input regulator
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