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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
COMBOSENSOR Texas Instruments XTR117 XTR117 4-20mA Current Loop Transmitter
PMP6938 Texas Instruments High Efficiency, Small Form Factor 4-20mA Current Loop 2-wire Sensor Power Supply
DAC161P997CISQ/NOPB Texas Instruments Single-Wire 16-bit DAC for 4-20mA Loops 16-WQFN -40 to 105
DAC161P997CISQX/NOPB Texas Instruments Single-Wire 16-bit DAC for 4-20mA Loops 16-WQFN -40 to 105
RCV420JP Texas Instruments Precision 4mA to 20mA Current Loop Receiver 16-PDIP 0 to 70
XTR101AUG4 Texas Instruments Precision, Low Drift 4-20mA Two-Wire Transmitter 16-SOIC -40 to 85

P51-1000-A-AA-D-20MA-000-000 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
P51-1000-A-AA-D-20MA-000-000 P51-1000-A-AA-D-20MA-000-000 ECAD Model SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 1000PSI 7/16-20UNF 4-20MA Original PDF

P51-1000-A-AA-D-20MA-000-000 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - BTA 16 MOSFET

Abstract: No abstract text available
Text: , VDS = 25 V, f = 1 MHz 1000 330 42 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 W (External), 55 , . Capacitance Curves 9TÃ ÃÃÃD 9Ã 2Ã"6 2Ã 6 ÃÃÃD BÃ 9ROWV 9 6


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PDF 48N55 BTA 16 MOSFET
2007 - Not Available

Abstract: No abstract text available
Text: THBV3_1101JA 図 11-1 HPD の模式図 1400 電子打込みゲイン 1200 1000 800 600 , ダークカウント: 540/s 1000 0 0 1000 2000 3000 4000 出力波高 (ADC Channel Number , €‚ 10-6 1000 アバランシェ増倍ゲイン リーク電流 10-8 1 10-9 10-10 0.1 , 電子打込みゲイン 1200 1000 800 600 400 0 サンプル数: 19 平均 平均+α 平均-Î , 85 80 0 10 100 1000 動作時間 (min.) THBV3_1109JA 図 11-9 ドリフト特æ


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PDF 1112JA 1113JA R7110U
1999 - 15N100

Abstract: IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1
Text: Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS(on) 1000 V 14 A 0.75 W 1000 V 15 A , 15N100 14N100 15N100 V V ±20 ±30 EAR 1000 1000 TJ -55 . +150 °C TJM Tstg , VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 g 1000 VGS(th) Characteristic Values , IXFH15N100 IXFT15N100 IXFX15N100 W 2Ã$W Wq2"W 9TÃ 8v ÃÃÃD 2"6 2Ã&$6 &DSDFLWDQFH S) 9Ã 9 ÃÃÃD 2 6 2Ã 6 BÃ B 9ROWV 9 6 * sÃ2Ã HC 8 8


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PDF IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 14N100 15N100 15N100 IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1
1999 - BT 1496

Abstract: wy 409
Text: 36N100 VDSS ID25 D RDS(on) = 1000V = 36A = 0.24 W G S S Maximum Ratings 1000 1000 ± , (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2 TJ = 25°C TJ = 125°C 4.5 ± 200 100 2 , reserved IXFN 36N100 " W 9TÃ 2Ã$ÃW 8v ÃÃÃD 9Ã 2Ã 'Ã6 2Ã Ã6 y W Ã Ã W ÃÃÃD BÃ 6 * A Ã Ã r p h v p h h 8 sÃ2Ã xC 8 8 , 1000 WT9ÃÃÃWy Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure10. Forward Bias


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PDF 36N100 Figure10. BT 1496 wy 409
1999 - BT 1496

Abstract: 34N80 diode 931 p 7
Text: DT T 9T Ã ÃÃÃD 9Ã 2Ã 2Ã ÃÃÃD BÃ y W Ã Ã W 6 * A Ã Ã , TÃ 100 ÃWy 1000 W T9 ÃÃÃWy Figure 8. Forward Voltage Drop of the Intrinsic Diode


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PDF 34N80 BT 1496 34N80 diode 931 p 7
MS-011

Abstract: jc-11.3 item 67 AAAD
Text: JUO INCH ROW SPACING (PLASTIC! ISSUE B DATE 6/88 MS-011 AA-AD s r COMMON NOTE 6 9 ALL , (PLASTICI ISSUE B DATE 6/88 MS-011 AA-AD


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PDF 5M-1982. JC-11 MS-011 jc-11.3 item 67 AAAD
amperex 838

Abstract: 200 watts amplifier 80 watts power amplifier Amperex class d rf power amplifier output tube 42
Text: Power Output (watts) — 216 175 220 100 10 1000 0 1725 6900 106 200 320 320 10 1250 0 2250 , for Above Operation (mc.) 30 10 1000 0 65 130 130 11 10 1250 -14 4.5 42 40 , = Grid to Filament 6.5 /t/ii = = Plate to Filament 3.0 ¡¡.¡d = , 10 D.C. Plate Voltage 1000 750 1000 D.C. Grid Voltage -400 -100 -135 Peak R.F. Grid Voltage â , Voltage 1250 1000 1250 132 D.C. Grid Voltage -400 -135 -150 87 Peak R.F. Grid Voltage — 255 280 D.C


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PDF 838-AMPEREX amperex 838 200 watts amplifier 80 watts power amplifier Amperex class d rf power amplifier output tube 42
2000 - 32N50Q

Abstract: BTAA
Text: Wq2"W ' * ÃÃÃD 2 %6 ÃÃÃD 2 y W Ã Ã 6 * A Ã Ã r p h v


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PDF 30N50Q 32N50Q 247TM 32N50Q BTAA
1999 - Not Available

Abstract: No abstract text available
Text: IXFN 200N07   '6Ã2Ã#W ' ÃÃÃD Ã2à €6 * W 9 6 *  ,  $PSHUHV  9ROWV  ÃÃÃD Ã2Ã"'6   (Terminal current limit) '     


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PDF
2013 - Not Available

Abstract: No abstract text available
Text: current,Ic(A) 1800 1200 1000 800 600 9V 1200 1000 800 9V 600 400 , Collector to Emitter Voltage,VCE(V) 2000 Tj=125 ££ ££ Tj=RT 1600 1400 1200 1000 , Current Forward Current, IF(A) 500 1000 1500 2000 0 0 Switching Time vs. Collector Current Collector Current 500 1000 IC (A) 1500 2000 0.0 IC k t9 t11 t10 IC , . Collector Current Ic (A) 1500 2000 Collector Current 0 500 1000 Ic (A) 1500 2000


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PDF IGBT-SP-03010 MBN1600E17D 000cycles)
CMP-01

Abstract: REF01 OP-27 OP-15 OP-07 ODD0002 EFSJ DAC08 AMP01 7541 adc
Text: OP-27 25 4.7 114 40 1000 1.7 3.5 outa[7 •«Ad «l(ï .««[I «•E .E «.E «E Km M CNM a». aw. jQ-»» a»«» 3ow» g-*» 3- 3-«c 3-«e 3«. OP-37 25 4.7 114 40 1000 17 3.5 - mm OP-77 25 2 120 2 5000 0.1 10.3 ©its. mmmm & OP-270 50 2.5 • 110 10 1000 1.4 2.6 isffiiiiR • mmfà ' , rjvt.™-□«it hj. 1m TM( AMP01 50 3.1 125 4 1000 4.5 5 ffiîiïit • OP-07 25 4 110 2 300 0.1 10.3 m&m&mm


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PDF 10RRIHAN 3MD470 ODD0002 AMP01 OP-07 OP-15 OP-27 OP-37 OP-77 CMP01 CMP-01 REF01 EFSJ DAC08 7541 adc
Not Available

Abstract: No abstract text available
Text: GAP-AAA-DDR-100 4. AAA-D D R-100-K* :RoHS Compliant 5. AAA-D D R-100-P* :HF Compliant SIZE UNITS


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PDF C7025) MO-269 GAP-AAA-DDR-100 AAA-DDR-100-K01 Green353U AAA-DDR-100-K46 AAA-DDR-100-K20
2011 - Not Available

Abstract: No abstract text available
Text: mode D7~0 中の L は、AD 出力の下位 8 ビット、M は上位 8 ビットを示すã , CCDIN0 CCDIN1 CCDIN0 CCDIN1 CCDIN0 0 1 2 CDS mode D7~0中の L は、AD 出力の下位 8ï , CCDIN2 0 M L CCDIN0 1 DC mode D7~0 中の L は、AD 出力の下位 8 ビット、M , CCDIN1 M L CCDIN0 1 2 DC mode D7~0中の L は、AD 出力の下位 8ï , 1111 1111 ・・・ -2.5 mV 1000 0001 -321.0 mV ・・・ ・・・ 1000 0000


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PDF AK8443 30MSPS 764Vpp 341Vpp 10MSPS/ch) 16bit 321mV
2013 - Not Available

Abstract: No abstract text available
Text: current,Ic(A) 1800 1200 1000 800 600 9V 1200 1000 800 9V 600 400 , Collector to Emitter Voltage,VCE(V) 2000 Tj=125 ££ ££ Tj=RT 1600 1400 1200 1000 , Current Forward Current, IF(A) 500 1000 1500 2000 0 0 Switching Time vs. Collector Current Collector Current 500 1000 IC (A) 1500 2000 0.0 IC k t9 t11 t10 IC , . Collector Current Ic (A) 1500 2000 Collector Current 0 500 1000 Ic (A) 1500 2000


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PDF IGBT-SP-03010 MBN1600E17D 000cycles)
2003 - Not Available

Abstract: No abstract text available
Text: Type LGP6531- 1000 DC22.5V 4A øY øX Dia A Type 電源ジャックè , Type DC19V 5.3A − Type ゲージA ゲージD Gauge A Gauge D øA 7 LGP7031 , LGP6531- 1000 8 8.5 3 3 2 1 3.5 ø5.5 5-ø1.4 (Hole) 4 2 3 4 2 Ã


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PDF S-G9312 DC12V X-G9242 LGP6531-1000 X-G9258 DC19V LGP7031-11
1999 - 26N50Q

Abstract: No abstract text available
Text: W 9TÃ 2Ã!$ÃW 2Ã "Ã6 2Ã Ã6 ÃÃÃD 9Ã &DSDFLWDQFH S) 8v sÃ2Ã HC 9ROWV ÃÃÃD BÃ 9 6 * 8 8 *DWH &KDUJH Q& 9'6 9ROWV


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PDF O-247 O-268 26N50Q 26N50Q
1999 - Not Available

Abstract: No abstract text available
Text: 15N80Q IXFT 15N80Q W 9TÃ 2Ã#ÃW 2Ã&$Ã6 2Ã Ã6 ÃÃÃD 9Ã 9ROWV ÃÃÃD


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PDF 15N80Q 15N80Q O-268 O-247 Figure10.
Not Available

Abstract: No abstract text available
Text: Diagram b?Z4P4D D D1 ÔÔÔD 33e ! 257 LIGHT EMITTING DIODES OLD22Q3 A BSO LU TE , 24fl 260 1000 1050 LIGHT EMITTING DIODES OLD22Q3 • DC Forward Current vs. Forward


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PDF QLD2203 TheOLD2203 OLD2203 2M24D OLD22Q3 2424G OLD2203
1997 - 8N80

Abstract: 9n80 diode 931 p 7 W8N80 smd diode SM 97 IXFH9N80 125OC IXFH8N80 08N80 diode A2 9
Text: Figure 8. Capacitance Curves Figure 7. Gate Charge W 2Ã#W 9TÃ ÃÃÃD 2Ã#6 ÃÃÃD 2Ã A Ã Ã r p h v p h h 8 9Ã y W Ã Ã BÃ 6


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PDF IXFH8N80 IXFH9N80 O-247 8N80 9n80 diode 931 p 7 W8N80 smd diode SM 97 125OC 08N80 diode A2 9
MM2316E

Abstract: MM2716 MM52116FDW-D D24C tac l2 can obd MM52116 MM52116FDX-N MM52116FDX-D MM52116FDW-N
Text: DOGQO □ □ODO □ □□□O ooaaa □ dodo □ □do a □ □□□□ □ □■□D □ □■□G □ □•DO □ □•□a oaooa □ □■□D oaooo □ ■□ID □ •□•G □ ODDO aaooD , –¡ □□aa □ □□od □ OIDO ■□■DI DBBBD □■■•D □GIOO □ □□□D □ □□□□ â , –¡ □BOD □ □□OO □ BBOD OOBDO □ □■□D □ □■OO □ ■■■a □ □□OO □ □□DO


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PDF MM52116FDW, MM52116FDX 128-character, MM52116FDW/ 128-character MM2316E MM2716 MM52116FDW-D D24C tac l2 can obd MM52116 MM52116FDX-N MM52116FDX-D MM52116FDW-N
1997 - BHRH

Abstract: SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125
Text: IXFK170N10 Figure 8. Capacitance Curves Figure 7. Gate Charge Wq2Ã$W ÃÃÃD 2Ã'$6 9 ÃÃÃD y W Ã Ã 6 * W IXFN170N10 B 2 6 sÃ2Ã A Ã Ã r p


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PDF IXFN170N10 IXFK170N10 200ns O-264 170N10 BHRH SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125
TC74VCX16652FT

Abstract: No abstract text available
Text: > °——D >°- -[>- -<]—- , as above block H- C> °——D >°- -[>- -<]—


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PDF TC74VCX16652FT 16-BIT TC74VCX16652FT dischar4VCX16652FT 10EAB----Â 10EBA-â 20EAB- 20EBA-
1997 - 200N07

Abstract: 180N07 200N06 BT 1496
Text: 200N07 ,;)1 9T ÃÃÃD Ã2Ã"'6 9 , $PSHUHV ÃÃÃD Ã2Ã 6 B 9ROWV


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PDF ID130 200N06/200N07 180N07 200N07 200N06 BT 1496
1999 - 32n50

Abstract: 30N50
Text: IXYS All rights reserved IXFH 30N50 IXFT 30N50 Figure 7. Gate Charge 8v Wq2"W ÃÃÃD 2"6 IXFH 32N50 IXFT 32N50 Figure 8. Capacitance Curves AÃ2Ã HC ' ÃÃÃD 2 * 6 y W


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PDF 30N50 32N50 O-247 O-268
2006 - Not Available

Abstract: No abstract text available
Text: •°ï¼š60 Hz ●短い発光パルス幅 (半値幅:FWHM) :約2.90 µs 2 µF, 1000 V時) ï , ‚¢ 無 内蔵 無 — 動作電圧 300 ∼ 1000 V 推奨動作電圧 700 ∼ 1000 V 5 ∼ 10 kV 0.22 µF 1 J トリガ電圧 トリガコンデンサ容量 , 最大繰返周波数c 60 Hz 光出力変動 (p-p) 3 % Max.g 保証動 作寿命d 8 × 107 フã , V∼ 1000 Vの範囲でご使用く さ だい。 h 冷却ジ ャケッ らの温度センサリ


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PDF L7684, L7685/L6604, L6605 L7685ï TLSXF0105 TLSXF0103 TLSX1029J04
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